Experimental study of the structure of chalcogenide glassy semiconductors in three-component systems of Ge-As-Se and As-Sb-Se by means of NQR and EPR spectroscopy

The structure of chalcogenide glassy semiconductors in three-component systems of Ge-As-Se and As-Sb-Se has been studied by means of both NQR (nuclear quadrupole resonance) and EPR (electron paramagnetic resonance) spectroscopy. It is investigated that in the glasses of both systems the value of the electric field gradient at the resonating nuclei grows with increasing concentration of the clusters As₂Se₃ and Sb₂Se₃, thereby increasing the NQR resonance frequencies. It appears that for the Ge-As-Se system the structural transition from a two-dimensional to three-dimensional structure occurs at average coordination number $\bar r$ = 2.45. The EPR spectral parameters of glasses depend on the composition, the average coordination number and the temperature, and these are discussed. The effect of ”ageing” for CGS (chalcogenide glassy semiconductors) of As-Sb-Se system due to partial crystallization of the sample is observed from the EPR spectra.     

Magnetic resonance study of arsenic bonding sites in ternary chalcogenide glasses

⁷⁵As NQR and high-field NMR experiments have been performed on Ge_xAs_ySe_1−x−y glasses. Evolution of As bonding structure from arsenic sites with axially symmetric distribution of the electric field gradient (EFG) to highly asymmetric As surroundings has been revealed. Arsenic atoms form pyramidal structural units in Ge₂As₂Se₇ with no evidence of significant concentration of homopolar bonds. In Ge₂As₂Se₅ most of arsenic atoms form structural units with two As-As bonds per atom and asymmetric EFG distribution. Arsenic bondings become more complicated in Ge_0.33As_0.12Se_0.55 where all arsenic sites are highly distorted. The combination of NQR and NMR data provide valuable information on arsenic bonding dynamics in these glasses.     

Thermal conductivity of GexSb(As)ySe100‐x‐y glasses measured by Raman scattering spectra

We systematically measured thermal conductivity of Ge_xSb(As)₁₀Se_90−x, Ge_xSb₁₅Se_85−x, and Ge_xSb(As)₂₀Se_80−x chalcogenide glasses by measuring their Stokes and anti‐Stokes Raman scattering spectra and estimating the temperature raised by laser irradiation via the ratio of Stoke and anti‐Stokes scattering cross‐section. We aimed at demonstrating the viability of Raman scattering method for thermal conductivity measurements, and understanding the role of chemical composition in determining thermal conductivity of the chalcogenide glasses. We found that, while the values of the thermal conductivity measured in the paper are in a range from ~0.078 to 1.120 Wm^‐1K^‐1 that are in agreement with those reported data in the literatures, thermal conductivity increases before it reaches a maximum at the glass with chemically stoichiometric composition, and then decreases with increasing Ge content. We ascribed the threshold behavior of the thermal conductivity to the demixing of the structural units like GeSe₂, As₂Se₃ and Sb₂Se₃ from the main glass network. The present study demonstrated that Raman scattering method is simple and easy to measure thermal conductivity of the material. Copyright © 2014 John Wiley & Sons, Ltd.     

Effect of replacement of Se by S on structural and physical properties of Ge–Sb–As–Se–S chalcogenide glasses

In the present study, the structural and opto-mechanical properties of Ge–Sb–As–Se–S chalcogenide glasses have been investigated. For this purpose, different bulk glasses of Ge₂₀Sb₅As₁₅Se_60?xS_x (0 ≤ x≤50) were prepared by conventional melt quenching technique in quartz ampoule and different characteristics of prepared glasses such as glass transition temperature, density, hardness, transmittance, optical band gap energy and refractive index were determined. The value of hardness and glass transition temperature of prepared glasses were found to increase with increasing the sulfur content as a result of formation of GeS₄ tetrahedral units and increasing the network connectivity and average bonding energy. The optical energy gap (according to Tauc’s relation), transmittance and refractive index of prepared glasses are in direct relation with sulfur content. In this study, the highest value of transmittance (about 70%) and lowest value of refractive index (2–2.3) was achieved in Ge₂₀Sb₅As₁₅Se₄₀S₂₀ and Ge₂₀Sb₅As₁₅Se₁₀S₅₀ glasses, respectively.     

121,123Sb and 75As NMR and NQR investigation of the tetrahedrite (Cu12Sb4S13) – Tennantite (Cu12As4S13) system and other metal arsenides

This work is motivated by the recent developments in online minerals analysis in the mining and minerals processing industry via nuclear quadrupole resonance (NQR). Here we describe a nuclear magnetic resonance (NMR) and NQR study of the minerals tennantite (Cu₁₂As₄S₁₃) and tetrahedrite (Cu₁₂ Sb₄S₁₃). In the first part NQR lines associated with ⁷⁵As in tennantite and ^121,123Sb isotopes in tetrahedrite are reported. The spectroscopy has been restricted to an ambient temperature studies in accord with typical industrial conditions. The second part of this contribution reports nuclear quadrupole-perturbed NMR findings on further, only partially characterised, metal arsenides. The findings enhance the detection capabilities of NQR based analysers for online measurement applications and may aid to control arsenic and antimony concentrations in metal processing stages.     

Ionic conduction pathways in noble metal chalcohalide glasses

High-energy X-ray diffraction, neutron diffraction and extended X-ray absorption fine structure experiments have been carried out for (MI)_x(As₂Se₃)_1−x glasses (M: Ag or Cu). The addition of a large amount of MI does not significantly affect short-range orderings of the host network matrix. The interatomic distance of M–I pairs is very similar to the case of crystalline MI. However, the coordination number of M–I pairs in the present glasses seems to be somewhat smaller than that in the crystalline MI, suggesting a heavy distortion of tetrahedral coordinates of MI units or structural disorder of the I–I sub-cages in the glass state. It would be predictable that the structure model for MI–As₂Se₃ glasses is proposed to be a pseudobinary mixture of the As(Se_1/2)₃ network matrix and MI-related conduction pathways.     

Infrared properties of AsχTe1−χ glasses

Infrared reflection and transmission measurements in As_χTe_1?χ glasses (45?×?55) show well-defined Gaussian vibrational absorption peaks. Comparisons with spectra observed in crystalline and glassy As₂S₃ and As₂Se₃ indicate that the local order in As_χTe_1?χ glasses is not like that found in crystalline As₂Te₃, but rather it consists primarily of AsTe₃ pyramids which are probably linked together in a fashion similar to that found in As₂S₃ and As₂Se₃.     

ESR in X-irradiated As2O3 glass

X-irradiation of glassy As₂O₃ at 77K or 300K produces an unusually large density (～5×10¹⁸ cm^-3) of paramagnetic centers which are stable at 300K. The average spin-Hamiltonian parameters (g = 1.998, g_⊥ = 1.984, A₆ = 243G, A_⊥ = 114G) indicate that these centers are analogous to those previously observed in As₂Se₃ and As₂S₃ glasses and that they consist of unpaired electrons localized on a non-bonding 4p orbital of an As atom. Unlike the results obtained for As₂Se₃ and As₂S₃, the concommitant holes in As₂O₃ are trapped on Fe²⁺ impurity sites which become Fe³⁺ and not on non-bonding oxygen p orbitals. The radiation induced ESR is also accompanied by a stable optical absorption tail which lies within the band gap and increases exponentially with energy. This absorption can be partially bleached with the application of sub-band-gap light.     

Glass formation in the As2Se3-As2Te3-Sb2Te3 system

Chalcogenide glasses from the As₂Se₃-As₂Te₃-Sb₂Te₃ system were synthesized for the first time. The glass-forming region was determined by X-ray diffraction and electron microscopic analyses.The basic physicochemical parameters such as density (d), microhardness (HV) and temperatures of phase transformations (glass transition T_g, crystallization T_cr and melting T_m) were measured. Compactness and some thermomechanical characteristics such as volume (V_h) and formation energy (E_h) of micro-voids in the glassy network as well as the elasticity module (E) were calculated. The glass-forming ability was evaluated according to Hruby's criteria (K_G). The correlation between composition and properties of the (As₂Se₃)_x(As₂Te₃)_y(Sb₂Te₃)_z glasses was established and comprehensively discussed.     

Optical properties of chalcogenide glasses in the terahertz spectral region

Optical properties of chalcogenide glasses of three different compositions (As₂S₃, As₂S₃ × As₂Se₃, and As₂Se₃) are studied via terahertz pulsed spectroscopy. Absorption coefficients and refractive indices are measured in a frequency range of 0.2–1.6 THz. The results show that the phonon modes of the studied materials vary with the composition of the glasses.     

Low frequency Raman spectra of chalcogenide glasses

Low frequency (< 30 cm^-1) Raman scattering lineshapes for the chalcogenide glasses As₂S₃ and As₂Se₃ have been interpreted in terms of a model which explicitly includes acoustic (∼ ω2 density-of-states) and optic (rigid-layer like) vibrational modes.     

Multiphonon absorption in As2S3As2Se3 glasses

Multiphonon absorption in As₂S₃ and As₂Se₃ glasses is well explained by a molecular model in terms of combination bands of high frequency vibrational modes of pyramidal AsY₃ and bent AsYAs groups (Y = SorSe). Multiphonon absorption coefficients in mixed As₂S₃As₂Se₃ glasses are nearly additive in terms of the pure components, suggesting a high degree of non-random mixing.     

Low temperature elastic behaviour of As-Sb-Se and Ge-Sb-Se glasses

The ternary glasses of arsenic and germanium with antimony and selenium can be prepared in large sizes for optical purposes. The elastic behaviour of eight compositions of each glass has been studied down to 4.2 K using a 10 MHz ultrasonic pulse echo interferometer. The glasses have a normal elastic behaviour, with the velocities gradually increasing as the temperature is lowered. An anharmonic solid model of Lakkad satisfactorily explains the temperature variations. The elastic moduli of Ge _x Sb₁₀Se_90?x glasses increase linearly as the Ge content is increased up to 25 at. % and beyond this the increase is nonlinear. (AsSb)₄₀Se₆₀ glasses show a linear increase in elastic moduli with increasing Sb content. The elastic moduli of As _x Sb₁₅Se_85?x glasses exhibit a drastic change near the stoichiometric composition As₂₅Sb₁₅Se₆₀. These behaviours have been qualitatively explained on the basis of the structural changes in glasses.     

Synthesis and characterization of new LnxSb2−xSe3 (Ln: Yb, Er) nanoflowers and their physical properties

New Ln_xSb_2−xSe₃ (Ln: Yb³⁺, Er³) based nanomaterials were synthesized by a co-reduction method. Powder XRD patterns indicate that the Ln_xSb_2−xSe₃crystals (Ln=Yb³⁺, Er³⁺, x=0.00-0.12) are isostructural with Sb₂Se₃. The cell parameters b and c decrease for Ln=Er³⁺ and Yb³⁺ upon increasing the dopant content (x), while a increases. SEM images show that doping of the lanthanide ions in the lattice of Sb₂Se₃ generally results in nanoflowers. UV-vis absorption and emission spectroscopy reveals mainly electronic transitions of the Ln³⁺ ions in case of Yb³⁺ doped nanomaterials. Emission spectra of doped materials, in addition to the characteristic red emission peaks of Sb₂Se₃, show additional emission bands centered at 955 nm, originating from the ²F_7/2→²F_5/2 transition (f-f transitions) of the Yb³⁺ ions. DSC curves indicate that Sb₂Se₃ has the highest thermal stability. The temperature dependence of the electrical resistivity of doped-Sb₂Se₃ with Yb³⁺ and Er³⁺ was studied.     

Thickness distribution of thin amorphous chalcogenide films prepared by pulsed laser deposition

Amorphous chalcogenide thin films were prepared from As₂Se₃, As₃Se₂ and InSe bulk glasses by pulsed laser deposition using a KrF excimer laser. Thickness profiles of the films were determined using variable angle spectroscopic ellipsometry. The influence of the laser beam scanning process during the deposition on the thickness distribution of the prepared thin films was evaluated and the corresponding equations suggested. The results were compared with experimental data.     

Atomic reorientation rates in liquid chalcogenide glasses: NMR in Se and As2Se3

Temperature dependence of the NMR spectrum in liquid Se indicates that atomic reorientation in this molten ring-chain structure glass is governed by a distribution of correlation times with a median of τ^∗ = 5 × 10⁻⁵sec at 220°C. In liquid layer structure glasses at equivalent viscosity, atomic reorientation rates are not sufficient to narrow observed NMR spectra. SeSe and AsSe bonds in glassy Se and As₂Se₃ are distinguishable on the basis of their chemically shifted Se⁷⁷ NMR spectra.     

Fabrication and investigation of SnO2-As2(Se0.9Te0.1)3 and SnO2-(As0.67Sb0.33)2Se3 heterojunctions

A method for fabricating and the results of an investigation of SnO₂-As₂(Se_0.9Te_0.1)₃ and SnO₂-(As_0.67Sb_0.33)₂Se₃ heterojunctions are described. The spectral and current-voltage characteristics of the heterojunctions obtained are presented. Zh. Tekh. Fiz. 68, 55–57 (October 1998)     

Investigation of the optical constants of arsenic chalcogenide films in the wavelength range 0.5–2.5 μm

Thin films of chalcogenide glasses deposited on quartz glass substrates by thermal evaporation in vacuum have been investigated. The dependences n(λ) and k(λ) for films of different composition have been determined from the transmission spectra. Expressions of the n = A + BL + CL ² + Dλ ² + Eλ ⁴ type (L = (λ ² ? 0.028)^?1 and A, B, C, D, and E are constants) for calculating the refractive indices of As₂Se₃, AsSe₄, AsS₄, and AsS_16.2Se_16.2 films in the wavelength range from 0.5 to 2.5 μm are reported.     

Structural studies and physical properties of novel Sm-doped Sb2Se3 nanorods

Sm³⁺ doped Sb₂Se₃ nanorods were synthesized by the co-reduction method at 180 °C and pH=12 for 48 h. Powder XRD patterns indicate that the Sm_xSb_2−xSe₃ crystals (x=0.00-0.05) are isostructural with Sb₂Se₃. The cell parameters increase for Sm³⁺ upon increasing the dopant content (x). SEM images show that doping of Sm³⁺ ions in the lattice of Sb₂Se₃ results in nanorods. High-resolution transmission electron microscopic (HRTEM) studies reveal that the Sm_0.05Sb_1.95Se₃ is oriented in the [1 0 −1] growth direction. UV-vis absorption reveals mainly electronic transitions of the Sm³⁺ ions in doped nanomaterials. Emission spectra of doped materials, in addition to the characteristic red emission peaks of Sb₂Se₃, show other emission bands originating from f-f transitions of the Sm³⁺ ions. The electrical conductance of Sm-doped Sb₂Se₃ is higher than undoped Sb₂Se₃ and increase with temperature.     

Crystallization kinetics in new Sb14As29Se52Te5 amorphous glass

Differential scanning calorimetry (DSC) under non-isothermal conditions is used to study the crystallization kinetics of Sb₁₄As₂₉Se₅₂Te₅ chalcogenide glass. In addition, two approaches are used to analyze the dependence of glass transition temperature (T_g) on the heating rate (α). One is empirical linear relationship between (T_g) and ln(α). The second approach is the use of straight line vs. 1/T_g for the evaluation of the activation energy for glass transition. The phases at which the alloy crystallizes after the thermal treatment have been identified by using X-ray diffraction. The diffractogram of the transformed material shows the presence of some crystallites of As, Te, AsSb, As₂Se₃, Sb₂Se₃ and AsSe_.5Te_.5 in the residual amorphous matrix.