Monolayer Two‐dimensional Molecular Crystals for an Ultrasensitive OFET‐based Chemical Sensor

The sensitivity of conventional thin‐film OFET‐based sensors is limited by the diffusion of analytes through bulk films and remains the central challenge in sensing technology. Now, for the first time, an ultrasensitive (sub‐ppb level) sensor is reported that exploits n‐type monolayer molecular crystals (MMCs) with porous two‐dimensional structures. Thanks to monolayer crystal structure of NDI3HU‐DTYM2 (NDI) and controlled formation of porous structure, a world‐record detection limit of NH₃ (0.1 ppb) was achieved. Moreover, the MMC‐OFETs also enabled direct detection of solid analytes of biological amine derivatives, such as dopamine at an extremely low concentration of 500 ppb. The remarkably improved sensing performances of MMC‐OFETs opens up the possibility of engineering OFETs for ultrasensitive (bio)chemical sensing.     

Ultrathin polymer gate buffer layer for air‐stable,low‐voltage,n‐channel organic thin‐film transistors

An ultrathin poly(methyl methacrylate) (PMMA) buffer layer was developed to improve the performance of n‐channel organic thin‐film transistors (OTFTs). The 8 nm‐thick PMMA film, prepared by spin‐coating, provided a very smooth surface and a uniform coverage on SiO₂ surface reproducibly, which was confirmed by X‐ray reflectivity (XR) measurement. Then, we fabricated N,N′‐ditridecyl‐3,4,9,10‐perylenetetracarboxylic diimide (PTCDI‐C13) thin‐film transistors with and without this 8 nm‐thick PMMA insulating layer on SiO₂ gate insulators and achieved one‐order increase of field‐effect mobility (up to 0.11 cm²/(Vs) in a vacuum), one‐half decrease of threshold voltage, and reduction of current hysteresis with the PMMA layer. Only TFTs with the PMMA layer displayed n‐channel operation in air and showed field‐effect mobility of 0.10 cm²/(Vs). We consider that electrical characteristics of n‐channel OTFTs were considerably improved because the ultrathin PMMA film could effectively passivate the SiO₂ insulator surface and decrease interfacial electron traps. This result suggests the importance of the ultrathin PMMA layer for controlling the interfacial state at the semiconductor/insulator interface and the device characteristics of OTFTs. Copyright © 2009 John Wiley & Sons, Ltd.     

Enhanced Performance of Benzothieno[3,2‐b]thiophene (BTT)‐Based Bottom‐Contact Thin‐Film Transistors

Three new benzothieno[3,2‐b]thiophene ( BTT ; 1 ) derivatives, which were end‐functionalized with phenyl ( BTT‐P ; 2 ), benzothiophenyl ( BTT‐BT ; 3 ), and benzothieno[3,2‐b]thiophenyl groups ( BBTT ; 4 ; dimer of 1 ), were synthesized and characterized in organic thin‐film transistors (OTFTs). A new and improved synthetic method for BTT s was developed, which enabled the efficient realization of new BTT ‐based semiconductors. The crystal structure of BBTT was determined by single‐crystal X‐ray diffraction. Within this family, BBTT , which had the largest conjugation of the BTT derivatives in this study, exhibited the highest p‐channel characteristic, with a carrier mobility as high as 0.22 cm² V^?1 s^?1 and a current on/off ratio of 1×10⁷, as well as good ambient stability for bottom‐contact/bottom‐gate OTFT devices. The device characteristics were correlated with the film morphologies and microstructures of the corresponding compounds.     

Synthesis and characterization of fused‐thiophene containing naphthalene diimide n‐type copolymers for organic thin film transistor and all‐polymer solar cell applications

Naphthalene diimide copolymers are attractive n‐type materials due to their high electron affinities, high electron mobilities, and exceptional stability. Herein, we report a series of NDI‐fused‐thiophene based copolymers with each copolymer differing in the number of fused thiophenes in the donor monomer. Increasing the number of fused‐thiophene moieties within an NDI‐copolymer backbone is shown to not only enable tuning of the electronic structure but also improve charge mobilities within the active layer of organic field‐effect transistors. Electron mobilities and on/off ratios as high as 0.012 cm² V^?1 s^‐1 and I_on/I_off > 10⁵ were measured from n‐channel thin‐film transistors fabricated using NDI‐xfTh copolymers. Bulk heterojunction solar cell devices were also fabricated from the NDI‐xfTh copolymer series in blends with poly(3‐hexylthiophene) (P3HT) with PNDI‐4fTh ‐ based devices yielding the largest J_sc (0.57 mA cm^?2) and fill factor (55%) in addition to the highest measured PCE for this series (0.13%). © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2013 , 51, 4061–4069     

Solution‐Processable n‐Type Semiconductors Based on Unsymmetrical Naphthalene Imides: Synthesis,Characterization, and Applications in Field‐Effect Transistors

A series of unsymmetrical naphthalene imide derivatives ( 1a , 1b , 2 , 3 , 4 , 5 ) with high electron affinity was synthesized and used in n‐channel organic field‐effect transistors (OFETs). They have very good solubility in common organic solvents and good thermal stability up to 320 °C. Their photophysical, electrochemical, and thermal properties were investigated in detail. They showed low‐lying LUMO energy levels from ?3.90 to ?4.15 eV owing to a strong electron‐withdrawing character. Solution‐processed thin‐film OFETs based on 1a , 1b , 2 , 3 , 4 were measured in both N₂ and air. They all showed n‐type FET behavior. The liquid‐crystalline compounds 1a , 1b , and 3 showed good performance owing to the self‐healing properties of the film in the liquid‐crystal phase. Compound 3 has an electron mobility of up to 0.016 cm² V^?1 s^?1 and current on/off ratios of 10⁴–10⁵.     

Thermally curable organic/inorganic hybrid polymers as gate dielectrics for organic thin‐film transistors

New low‐temperature curable organic/inorganic hybrid polymers were designed and synthesized as gate dielectrics for organic thin‐film transistors (OTFTs). Allyl alcohols were introduced to polyhedral oligomeric silsesquioxane (POSS) via hydrosilyation to produce an alcohol‐functionalized POSS derivative (POSS‐OH). POSS‐OH was then reacted with hexamethoxymethylmelamine at carrying molar ratios at 80 °C in the presence of a catalytic amount of p‐toluenesulfonic acid to give highly cross‐linked network polymers (POSS‐MM). The prepared thin films were smooth and hard after the thermal cross‐linking reaction and had very low leakage currents (<10^?8 A/cm²) with no significant absorption over the visible spectral range. Pentacene‐based OTFTs using the synthesized insulators as gate dielectric layers had higher hole mobilities (up to 0.36 cm²/Vs) than a device using thermally cross‐linked poly(vinyl phenol) and melamine as the gate dielectric layer (0.18 cm²/Vs). © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2014 , 52, 3260–3268     

An A‐D‐A′‐D‐A Conjugated Molecule Entailing Diazapentalene Unit for an n‐Type Organic Semiconductor

Conjugated molecules with low lying LUMO levels are demanding for the development of air stable n‐type organic semiconductors. In this paper, we report a new A‐D‐A′‐D‐A conjugated molecule ( DAPDCV ) entailing diazapentalene (DAP) and dicyanovinylene groups as electron accepting units. Both theoretical and electrochemical studies manifest that the incorporation of DAP unit in the conjugated molecule can effectively lower the LUMO energy level. Accordingly, thin film of DAPDCV shows n‐type semiconducting behavior with electron mobility up to 0.16 cm²?V^?1?s^?1 after thermal annealing under N₂ atmosphere. Moreover, thin film of DAPDCV also shows stable n‐type transporting property in air with mobility reaching 0.078 cm²?V^?1?s^?1.     

Enhanced Performance of Solution‐Processed TESPE‐ADT Thin‐Film Transistors

A solution‐processed anthradithiophene derivative, 5,11‐bis(4‐triethylsilylphenylethynyl)anthradithiophene (TESPE‐ADT), is studied for use as the semiconducting material in thin‐film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin‐coating and drop‐casting) on various gate dielectrics as well as additional post‐treatment are employed on thin films of TESPE‐ADT, and p‐channel OTFT transport with hole mobilities as high as ～0.12 cm² V^?1 s^?1 are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.     

A Red‐Emissive Sextuple Hydrogen‐Bonding Self‐Assembly Molecular Duplex Bearing Perylene Diimide Fluorophores for Warm‐White Organic Light‐Emitting Diode Application

A novel sextuple hydrogen‐bonding (HB) self‐assembly molecular duplex bearing red‐emitting perylene diimide (PDI) fluorophores, namely PDIHB , was synthesized, and its molecular structure was confirmed by ¹H NMR, ¹³C NMR, TOF‐MS and 2D NMR. Compared with the small molecular reference compound PDI , PDIHB shows one time enhanced fluorescence efficiency in solid state (4.1% vs. 2.1%). More importantly, the presence of bulky HB oligoamide strands in PDIHB could trigger effective spatial separation between guest and host fluorophores in thin solid film state, hence inefficient energy transfer occurs between the blue‐emitting host 2TPhNIHB and red guest PDIHB in the 2 wt% guest/host blending film. As a result, a solution‐processed organic light‐emitting diode (OLED) with quite simple device structure of ITO/PEDOT:PSS (40 nm)/PVK (40 nm)/ PDIHB (2 wt%): 2TPhNIHB (50 nm)/LiF (0.8 nm)/Al (100 nm) could emit bias‐independent warm‐white electroluminescence with stable Commission Internationale de L'Eclairage coordinates of (0.42, 0.33), and the maximum brightness and current efficiency of this device are 260 cd·m^?2 and 0.49 cd·A^?1, respectively. All these results indicated that HB self‐assembly supramolecular fluorophores could act as prospective materials for white OLED application.     

Thieno[3,2‐b]thiophene‐Diketopyrrolopyrrole‐Based Quinoidal Small Molecules: Synthesis,Characterization, Redox Behavior,and n‐Channel Organic Field‐Effect Transistors

We report the synthesis, characterization, redox behavior, and n‐channel organic field‐effect (OFET) characteristics of a new class of thieno[3,2‐b]thiophene‐diketopyrrolopyrrole‐based quinoidal small molecules 3 and 4 . Under ambient atmosphere, solution‐processed thin‐film transistors based on 3 and 4 exhibit maximum electron mobilities up to 0.22 and 0.16 cm² V^?1 s^?1, respectively, with on‐off current ratios (I_on/I_off) of more than than 10⁶. Cyclic voltammetry analysis showed that this class of quinoidal derivatives exhibited excellent reversible two‐stage reduction behavior. This property was further investigated by a stepwise reductive titration of 4 , in which sequential reduction to the radical anion and then the dianion were observed.     

Two‐Step direct arylation for synthesis of naphthalenediimide‐based conjugated polymer

A naphthalenediimide (NDI)‐based conjugated polymer was synthesized by a two‐step direct C‐H arylation sequence. In the first step, two ethylenedioxythiophene units were coupled to NDI by direct arylation. In the second step, the direct arylation polycondensation of the monomer, formed in the first step, with 2,7‐dibromo‐9,9‐dioctylfluorene afforded the corresponding NDI‐based conjugated polymer ( PEDOTNDIF ) with molecular weight of 21,500 in 91% yield. The optical and electrochemical properties of the polymer were evaluated. The polymer showed ambipolar behavior in organic field‐effect transistors (OFETs). The electron mobility of PEDOTNDIF was estimated to be 2.3 × 10^?6 cm² V^?1 s^?1 using an OFET device with source‐drain (S‐D) Au electrodes. A modified OFET device with S‐D MgAg electrodes increased the electron mobility for PEDOTNDIF to 1.0 × 10^?5 cm² V^?1 s^?1 due to the more suitable work function of these electrodes, which reduced the injection barrier to the semiconducting polymer. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2014 , 52, 1401–1407     

Synthesis and characterization of poly(1,4‐bis((E)‐2‐(3‐dodecylthiophen‐2‐yl)vinyl)benzene) derivatives

New amorphous semiconducting copolymers, poly(9,9‐dialkylfluorene)‐alt‐(3‐dodecylthienyl‐divinylbenzene‐3‐dodecylthienyl) derivatives (PEFTVB and POFTVB), were designed, synthesized, and characterized. The structure of copolymers was confirmed by H NMR, IR, and elemental analysis. The copolymers showed very good solubility in organic solvents and high thermal stability with high T_g of 178–185 °C. The weight average molecular weight was found to be 107,900 with polydispersity of 3.14 for PEFTVB and 76,700 with that of 3.31 for POFTVB. UV–vis absorption studies showed the maximum absorption at 428 nm (in solution) and 435 nm (in film) for PEFTVB and at 430 nm (in solution) and 436 nm (in film) for POFTVB. Photoluminescence studies showed the emission at 498 nm (in solution) and 557 nm (in film) for PEFTVB and at 498 nm (in solution) and 536 nm (in film) for POFTVB. The solution‐processed thin‐film transistors showed the carrier mobility of 2 × 10^?4 cm² V^?1 s^?1 for PEFTVB‐based devices and 2 × 10^?5 cm² V^?1 s^?1 for POFTVB‐based devices. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 48: 3942–3949, 2010     

A Novel Thin‐Film Copper Array Based on an Organic/Inorganic Sensor Hybrid: Microfabrication,Potentiometric Characterization,and Flow‐Injection Analysis Application

A first step towards the microfabrication of a thin‐film array based on an organic/inorganic sensor hybrid has been realized. The inorganic microsensor part incorporates a sensor membrane based on a chalcogenide glass material (Cu‐Ag‐As‐Se) prepared by pulsed laser deposition technique (PLD) combined with an PVC organic membrane‐based organic microsensor part that includes an o‐xylyene bis(N,N‐diisobutyl‐dithiocarbamate) ionophore. Both types of materials have been electrochemically evaluated as sensing materials for copper(II) ions. The integrated hybrid sensor array based on these sensing materials provides a linear Nernstian response covering the range 1×10^?6–1×10^?1 mol L^?1 of copper(II) ion concentration with a fast, reliable and reproducible response. The merit offered by the new type of thin‐film hybrid array includes the high selectivity feature of the organic membrane‐based thin‐film microsensor part in addition to the high stability of the inorganic thin‐film microsensor part. Moreover, the thin‐film sensor hybrid has been successfully applied in flow‐injection analysis (FIA) for the determination of copper(II) ions using a miniaturized home‐made flow‐through cell. Realization of the organic/inorganic thin‐film sensor hybrid array facilitates the development of a promising sophisticated electronic tongue for recognition and classification of various liquid media.     

Electronic Properties and Field‐Effect Transistors of Thiophene‐Based Donor–Acceptor Conjugated Copolymers

Summary: The thiophene‐quinoxaline donor–acceptor conjugated copolymer poly[(thiophene‐2,5‐diyl‐alt‐(2,3‐diheptylquinoxaline‐5,8‐diyl)] (PTHQx) was explored as a semiconductor in thin‐film organic field‐effect transistors (OFETs). A hole mobility of 3.6 × 10⁻³ cm² · V⁻¹ · s⁻¹ and an on/off current ratio of 6 × 10⁵ were observed in p‐channel OFETs made from spin‐coated PTHQx thin films. The electronic structures of PTHQx and a related thiophene‐thienopyrazine donor–acceptor copolymer were calculated by density functional theory. Atomic force microscopy of PTHQx thin films showed a polycrystalline grain morphology that varied with the substrate.

Output (left) and transfer (right) characteristics of a PTHQx (structure shown) organic field‐effect transistor.     

Phenacyl–Thiophene and Quinone Semiconductors Designed for Solution Processability and Air‐Stability in High Mobility n‐Channel Field‐Effect Transistors

Electron‐transporting organic semiconductors (n‐channel) for field‐effect transistors (FETs) that are processable in common organic solvents or exhibit air‐stable operation are rare. This investigation addresses both these challenges through rational molecular design and computational predictions of n‐channel FET air‐stability. A series of seven phenacyl–thiophene‐based materials are reported incorporating systematic variations in molecular structure and reduction potential. These compounds are as follows: 5,5′′′‐bis(perfluorophenylcarbonyl)‐2,2′:5′,‐ 2′′:5′′,2′′′‐quaterthiophene ( 1 ), 5,5′′′‐bis(phenacyl)‐2,2′:5′,2′′: 5′′,2′′′‐quaterthiophene ( 2 ), poly[5,5′′′‐(perfluorophenac‐2‐yl)‐4′,4′′‐dioctyl‐2,2′:5′,2′′:5′′,2′′′‐quaterthiophene) ( 3 ), 5,5′′′‐bis(perfluorophenacyl)‐4,4′′′‐dioctyl‐2,2′:5′,2′′:5′′,2′′′‐quaterthiophene ( 4 ), 2,7‐bis((5‐perfluorophenacyl)thiophen‐2‐yl)‐9,10‐phenanthrenequinone ( 5 ), 2,7‐bis[(5‐phenacyl)thiophen‐2‐yl]‐9,10‐phenanthrenequinone ( 6 ), and 2,7‐bis(thiophen‐2‐yl)‐9,10‐phenanthrenequinone, ( 7 ). Optical and electrochemical data reveal that phenacyl functionalization significantly depresses the LUMO energies, and introduction of the quinone fragment results in even greater LUMO stabilization. FET measurements reveal that the films of materials 1 , 3 , 5 , and 6 exhibit n‐channel activity. Notably, oligomer 1 exhibits one of the highest μ_e (up to ≈0.3 cm² V^?1 s^?1) values reported to date for a solution‐cast organic semiconductor; one of the first n‐channel polymers, 3 , exhibits μ_e≈10^?6 cm² V^?1 s^?1 in spin‐cast films (μ_e=0.02 cm² V^?1 s^?1 for drop‐cast 1 : 3 blend films); and rare air‐stable n‐channel material 5 exhibits n‐channel FET operation with μ_e=0.015 cm² V^?1 s^?1, while maintaining a large I_on:off=10⁶ for a period greater than one year in air. The crystal structures of 1 and 2 reveal close herringbone interplanar π‐stacking distances (3.50 and 3.43 Å, respectively), whereas the structure of the model quinone compound, 7 , exhibits 3.48 Å cofacial π‐stacking in a slipped, donor‐acceptor motif.     

Controlled Self‐Assembly of Functional Metal Octaethylporphyrin 1 D Nanowires by Solution‐Phase Precipitative Method

Metal octaethylporphyrin M(OEP) (M=Ni, Cu, Zn, Pd, Ag, and Pt) nanowires are fabricated by a simple solution‐phase precipitative method. By controlling the composition of solvent mixtures, the diameters and lengths of the nanowires can be varied from 20 to 70 nm and 0.4 to 10 μm, respectively. The Ag(OEP) nanowires have lengths up to 10 μm and diameters of 20–70 nm. For the M(OEP) nanowires, the growth orientation and packing of M(OEP) molecules are examined by powder XRD and SAED measurements, revealing that these M(OEP) nanowires are formed by the self‐assembly of M(OEP) molecules through intermolecular π???π interactions along the π???π stacking axis, and the M²⁺ ion plays a key role in the nanowire formation. Using the bottom contact field effect transistor structure and a simple drop‐cast method, a single‐crystal M(OEP) nanowires‐based field effect transistor can be readily prepared with prominent hole transporting behaviour and charge‐carrier mobility up to 10^?3–10^?2 cm² V^?1 s^?1 for holes, which are 10 times higher than that of vacuum‐deposited M(OEP) organic thin‐film transistors (OTFTs).     

Structural Polymorphism and Thin Film Transistor Behavior in the Fullerene Framework Molecule 5,6;11,12‐di‐o‐Phenylenetetracene

The molecular structure of the hydrocarbon 5,6;11,12‐di‐o‐phenylenetetracene (DOPT), its material characterization and evaluation of electronic properties is reported for the first time. A single‐crystal X‐ray study reveals two different motifs of intramolecular overlap with herringbone‐type arrangement displaying either face‐to‐edge or co‐facial face‐to‐face packing depicting intensive π–π interactions. Density functional theory (DFT) calculations underpin that a favorable electronic transport mechanism occurs by a charge hopping process due to a π‐bond overlap in the DOPT polymorph with co‐facial arene orientation. The performance of polycrystalline DOPT films as active organic semiconducting layer in a state‐of‐the‐art organic field effect transistor (OFET) device was evaluated and proves to be film thickness dependent. For 40 nm layer thickness it displays a saturation hole mobility (μ_hole) of up to 0.01 cm² V^?1 s^?1 and an on/off‐ratio (I_on/I_off) of 1.5×10³.     

Conformational Dynamics of Monomer‐ versus Dimer‐like Features in a Naphthalenediimide‐Based Conjugated Cyclophane

The design and synthesis of an enantiomeric pair of 1,8‐diethynylanthracene‐bridged naphthalenediimide (NDI)‐based cyclophanes ( Cyclo‐NDI s) are reported. Each enantiomer of Cyclo‐NDI exhibits a circularly polarized luminescence signal with a relatively large luminescence dissymmetry factor (g_lum=±8×10^?3). We have further investigated the modulation of through‐space electronic communication between co‐facially oriented NDIs in a discrete Cyclo‐NDI with changes in the temperature. Tuning of the electronic communication results from the conformational transformation of monomer‐ versus dimer‐like features of Cyclo‐NDI , as confirmed by UV/Vis, fluorescence, circular dichroic, and NMR spectroscopic analysis. The temperature‐dependent optical response in the Cyclo‐NDI through the conformational transformation could be utilized as a highly sensitive and reversible optical thermometer in a wide temperature range (100 to ?80 °C).     

Tetrachlorinated Tetraazaperopyrenes (TAPPs): Highly Fluorescent Dyes and Semiconductors for Air‐Stable Organic n‐Channel Transistors and Complementary Circuits

A range of 2,9‐perfluoroalkyl‐substituted tetraazaperopyrene (TAPP) derivatives ( 1 – 5 ) was synthesised by reacting 4,9‐diamino‐3,10‐perylenequinone diimine (DPDI) with the corresponding carboxylic acid chloride or anhydride in the presence of a base. The reaction of compounds 1 – 4 with dichloroisocyanuric acid (DIC) in concentrated sulphuric acid resulted in the fourfold substitution of the tetraazaperopyrene core, yielding the 2,9‐bisperfluoroalkyl‐4,7,11,14‐tetrachloro‐1,3,8,10‐tetraazaperopyrenes 6 – 9 , respectively. The optical and electrochemical data demonstrate the drastic influence of the core substitution on the properties. All compounds are highly luminescent (fluorescence quantum yields of up to Φ=0.8). The LUMO energies of the tetrachlorinated TAPP derivatives (determined by cyclic voltammetry and computed by DFT calulations) were found to be below ?4 eV. In the course of this work the performance of TAPP derivatives in organic thin‐film transistors (TFTs) was investigated, and their n‐channel characteristics with field‐effect mobilities of up to 0.14 cm² V^?1 s^?1 and an on/off current ratio of >10⁶ were confirmed. Long‐term stabilities of 3–4 months under ambient conditions of the devices were established. Complementary inverters and ring oscillators with n‐channel TFTs based on compound 8 and p‐channel TFTs based on dinaphtho‐[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene (DNTT) were fabricated on a glass substrate.     

Heptagon‐Embedded Pentacene: Synthesis,Structures, and Thin‐Film Transistors of Dibenzo[d,d′]benzo[1,2‐a:4,5‐a′]dicycloheptenes

This study presents a new class of conjugated polycyclic molecules that contain seven‐membered rings, detailing their synthesis, crystal structures and semiconductor properties. These molecules have a nearly flat C₆‐C₇‐C₆‐C₇‐C₆ polycyclic framework with a p‐quinodimethane core. With field‐effect mobilities of up to 0.76 cm² V^?1 s^?1 as measured from solution‐processed thin‐film transistors, these molecules are alternatives to the well‐studied pentacene analogues for applications in organic electronic devices.