MgB2和Mg0.93Li0.07B2的电阻率与霍尔效应研究

测量了MgB₂和Mg_0.93Li_0.07B₂的电阻率ρ(T)与霍尔系数R_H(T)的温度依赖关系.电阻率的测量结果表明,MgB₂和Mg_0.93Li_0.07B₂的正常态电阻率与温度有平方的依赖关系.MgB₂和Mg_0.93Li_0.07B_{2关键词： 电阻率 霍尔效应}     

Fluctuation conductivity in superconducting MgB2

According to the crystal structure of MgB₂ and band structure calculations, quasi-two-dimensional (2D) boron planes are responsible for the superconductivity. We report on critical-field and resistance measurements of 5.6-μm-thick MgB₂ films grown on a sapphire single-crystal substrate. Resistivity measurements yield a temperature dependence of the fluctuation conductivity above the critical temperature, which agrees with the Aslamazov-Larkin and Maki-Thompson theory of fluctuations in layered superconductors, indicating a quasi-two-dimensional nucleation of superconductivity in MgB₂.     

超导材料NbS2上临界磁场的理论分析

根据两带Ginzburg-Landau 理论计算了层状超导材料NbS₂的上临界磁场, 以及上临界磁场各向异性参数随温度的变化情况, 并将NbS₂与MgB₂, NbSe₂上临界磁场的各向异性进行比较. 所得计算结果与已有实验数据符合得很好, 充分说明了NbS₂的超导电性具有两能隙特征. NbS₂上临界磁场各向异性参数在5.0 K附近逐渐变小, 这与MgB₂和NbSe₂有相似之处. 但NbS₂的上临界磁场各向异性参数大约为7.3, 明显大于MgB₂和NbSe₂. 计算结果还表明, NbS₂较大能隙所对应能带的有效质量比约为54, 另一能带的有效质量基本为各向同性.     

Non-resonant microwave absorption studies of superconducting MgB2 and MgB2 + MgO

Non-resonant microwave absorption (NRMA) studies of superconducting MgB₂ and a sample containing ∼10% by weight of MgO in MgB₂ are reported. The NRMA results indicate near absence of intergranular weak links in the pure MgB₂ sample. A linear temperature dependence of the lower critical field H _c1 is observed indicating a non-s wave superconductivity. However, the phase reversal of the NRMA signal which could suggest d wave symmetry is also not observed. In the MgB₂ + MgO sample, much larger low field dependent absorption is observed indicating the presence of intergranular weak links. The hysteretic behavior of NRMA is compared and contrasted in the two samples. In the pure MgB₂ sample, a large hysteresis is observed between the forward and the reverse scans of the magnetic field indicating strong pinning of flux lines. This hysteresis saturates a few degrees below T _c while in the MgB₂ + MgO sample, a much slower increase of hysteresis with decreasing temperature is observed, a signature of weaker pinning.     

Electron transport,penetration depth,and the upper critical magnetic field in ZrB<Subscript>12</Subscript> and MgB<Subscript>2</Subscript>

We report on the synthesis and measurements of the temperature dependences of the resistivity ρ, the penetration depth λ, and the upper critical magnetic field H_c2, for polycrystalline samples of dodecaboride ZrB₁₂ and diboride MgB₂. We conclude that ZrB₁₂ behaves as a simple metal in the normal state with the usual Bloch-Grüneisen temperature dependence of ρ(T) and with a rather low resistive Debye temperature T_R = 280 K (to be compared to T_R = 900 K for MgB₂). The ρ(T) and λ(T) dependences for these samples reveal a superconducting transition in ZrB₁₂ at T_c = 6.0 K. Although a clear exponential λ(T) dependence in MgB₂ thin films and ceramic pellets was observed at low temperatures, this dependence was almost linear for ZrB₁₂ below T_c/2. These features indicate an s-wave pairing state in MgB₂, whereas a d-wave pairing state is possible in ZrB₁₂. In disagreement with conventional theories, we found a linear temperature dependence, of H_c2(T) for ZrB₁₂ (H_c2(0) = 0.15 T).     

Effect of SiC buffer layer on flux pinning property of MgB2 tapes

In this paper we aimed at investigating the flux pinning property of MgB₂ films on hastelloy tapes which are buffered on various thicknesses of SiC layers. We have observed that the increase in thickness of the SiC buffer layer is very closely related with the systematic improvement of the field dependence of the critical current densities (J_c) of MgB₂ tapes while the values of J_c decreased. According to the analysis of the pinning force density (F_p), there exist two pinning sources both in the pure MgB₂ and in the MgB₂ film with the thinnest SiC buffer layer. On the while, the pinning source observed in the MgB₂ films with thicker SiC buffer layers appears to be different from those previously mentioned. The different pinning behaviors of MgB₂ films may suggest that there be an additional pinning center working on the MgB₂ films with thick SiC buffer layers. The microstructural analyses of MgB₂ films confirmed that intra-granular defects and columnar grain boundaries may be a dominant pinning mechanism in the pure MgB₂ and the MgB₂ film with 170 nm-thick SiC buffer layer. For the MgB₂ films with thicker SiC buffer layers, carbon diffusion into the MgB₂ film, which is defined by the Auger electron spectroscopy, may be the origin of the additional pinning mechanism.     

Influence of Ni addition on the process of phase formation in MgB2 bulk

Nickel is an important sheath material for the fabrication of MgB₂ wires. However, the effects of Ni doping on the phase formation and superconducting properties of MgB₂ remain controversial. In this work, Ni powder is selected for doping in MgB₂ bulk in order to examine the corresponding changes. Combining with the DSC analysis and in-situ XRD results, we find indications that the Ni powder reacted with Mg and B, forming MgNi_2.5B₂ at 600°C. The ternary compound began to decompose at a temperature above 800°C. The reactive phase, MgNi_2.5B₂, acted as an obstacle to the supercurrent flow, creating weak links among the MgB₂ grain boundaries. However, it is found that the added Ni formed a eutectic liquid phase with Mg at 506°C. The liquid phase helps the formation of MgB₂ at low temperature, which not only increases the density of the sample, but also improves the grain connectivity. Consequently, the presence of Ni in the MgB₂ sample is not necessarily a disadvantage; it depends on the desired application.     

Upper critical field of cellular magnesium diboride

A cellular superconducting material consisting of thin (1–20 μm) MgB_2?x layers and magnesium granules of about 100 μm has been produced. The critical temperature T _c of this superconductor decreases with the thickness of the MgB_2?x layers. In unalloyed magnesium diboride, the curvature of the temperature dependence of the upper critical field H _c2(T) changes gradually from downward to pronounced upward as the temperature T _c decreases from 38 to 36 K.     

Magnetic field dependence of vortex activation energy: A comparison between MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10 superconductors

The dissipative mechanism at low current density is compared in three different classes of superconductors. This is achieved by measuring the resistance as a function of temperature and magnetic field in clean polycrystalline samples of NbSe₂, MgB₂ and Bi₂Sr₂Ca₂Cu₃O₁₀ (BSCCO) superconductors. Thermally activated flux flow behaviour is seen in all the three systems and clearly identified in bulk MgB₂. While the activation energy at low fields for MgB₂ is comparable to Bi₂Sr₂Ca₂Cu₃O₁₀, its field dependence follows a parabolic behaviour unlike a power-law dependence seen in Bi₂Sr₂Ca₂Cu₃O₁₀. We analyse our results based on Kramer’s scaling for grain boundary pinning in MgB₂ and NbSe₂.      

Numerical solution of Bloch–Gruneisen function to determine the contribution of electron–phonon interaction in polycrystalline MgB2 superconductor

Here, we report the efficient and feasible analytical method for the generalized Bloch–Gruneisen law in association with Debye temperature and various temperatures range in terms of incomplete gamma function. In addition, our results are in agreement with previous reports as shown in this letter. Bloch–Gruneisen function describes the contribution of electron–phonon interaction to the results of temperature dependence behavior of resistivity for integer and noninteger values of index m. In conclusion, the algorithm is constructed in Fortran 90 language for replicate the variation of temperature dependence of resistivity for pristine MgB₂ sample. Moreover, the comparison of numerical results with the proposed method reveals the validity and precision of the method.     

MgB2 coated superconducting tapes with high critical current densities fabricated by hybrid physical-chemical vapor deposition

The MgB₂ coated superconducting tapes have been fabricated on textured Cu (0 0 1) and polycrystalline Hastelloy tapes using coated conductor technique, which has been developed for the second generation high temperature superconducting wires. The MgB₂/Cu tapes were fabricated over a wide temperature range of 460-520 °C by using hybrid physical-chemical vapor deposition (HPCVD) technique. The tapes exhibited the critical temperatures (T_c) ranging between 36 and 38 K with superconducting transition width (ΔT_c) of about 0.3-0.6 K. The highest critical current density (J_c) of 1.34 × 10⁵ A/cm² at 5 K under 3 T is obtained for the MgB₂/Cu tape grown at 460 °C. To further improve the flux pinning property of MgB₂ tapes, SiC is coated as an impurity layer on the Cu tape. In contrast to pure MgB₂/Cu tapes, the MgB₂ on SiC-coated Cu tapes exhibited opposite trend in the dependence of J_c with growth temperature. The improved flux pinning by the additional defects created by SiC-impurity layer along with the MgB₂ grain boundaries lead to strong improvement in J_c for the MgB₂/SiC/Cu tapes. The MgB₂/Hastelloy superconducting tapes fabricated at a temperature of 520 °C showed the critical temperatures ranging between 38.5 and 39.6 K. We obtained much higher J_c values over the wide field range for MgB₂/Hastelloy tapes than the previously reported data on other metallic substrates, such as Cu, SS, and Nb. The J_c values of J_c(20 K, 0 T) ∼5.8 × 10⁶ A/cm² and J_c(20 K, 1.5 T) ∼2.4 × 10⁵ A/cm² is obtained for the 2-μm-thick MgB₂/Hastelloy tape. This paper will review the merits of coated conductor approach along with the HPCVD technique to fabricate MgB₂ conductors with high T_c and J_c values which are useful for large scale applications.     

Enhanced critical current density of MgB2 thin films deposited at low temperatures by ZnO seed impurity

We report a facile method to enhance the critical current density (J_c) of superconducting MgB₂ thin films. MgB₂ thin films were deposited on zinc acetate dehydrate (Zn(CH₃COO)₂2H₂O) spin-coated Al₂O₃ (000l) substrates by using a hybrid physical-chemical vapor deposition system at low temperatures. Synthesis of MgB₂ at low temperatures can reduce the substitution of Zn into the Mg site, hence avoiding the reduction of superconducting critical temperature. MgB₂ thin films grown on ZnO-buffered layers showed a significant enhancement of J_c in the magnetic field due to the creation of additional pinning sources, namely point defects and grain boundaries. Broad peaks were observed in the magnetic field dependence of the flux pinning force density, indicating competition of different pinning sources.     

Raman spectra of MgB2 at high pressure and topological electronic transition

Raman spectra of MgB₂ ceramic samples were measured as a function of pressure up to 32 GPa at room temperature. The spectrum at normal conditions contains a very broad peak at ∼590 cm⁻¹ related to the E _2g phonon mode. The frequency of this mode exhibits a strong linear dependence in the pressure region from 5 to 18 GPa, whereas, beyond this region, the slope of the pressure-induced frequency shift is reduced by about a factor of two. The pressure dependence of the phonon mode up to ∼5 GPa exhibits a change in the slope, as well as a “hysteresis” effect in the frequency vs. pressure behavior. These singularities in the E _2g mode behavior under pressure support the suggestion that MgB₂ may undergo a pressure-induced topological electronic transition.     

Angular dependence of magnetoresistivity in c-oriented MgB thin film

The anisotropy of MgB₂ is still under debate: its value, strongly dependent on the kind of sample and on the measuring method, ranges between 1.2 and 13. In this work we present our results on MgB₂ c-oriented superconducting thin film. To evaluate the anisotropy, we followed two different approaches. Firstly, magnetoresistivity was measured as a function of temperature at selected magnetic fields applied both parallel and perpendicular to the c-axis; secondly, we measured magnetoresistivity at selected temperatures and magnetic fields, varying the angle θ between the magnetic field and the c-axis. The anisotropy estimated from the ratio between the upper critical fields parallel and perpendicular to the c-axis and the one obtained in the framework of the scaling approach within the anisotropic Ginzburg-Landau theory are different but show a similar trend in the temperature dependence. Some differences in the upper critical field and in its anisotropy of our film with respect to single crystals are emphasized: some of these aspects can be accounted for by an analysis of upper critical fields within a two-band model in presence of disorder and/or crystallographic strain. Received 12 July 2002 / Received in final form 17 September 2002 Published online 29 November 2002     

A possible role of amorphous regions at grain-boundary vertex points as linear defects on flux pinning in MgB2 films with columnar grain structure

We measured the transport properties of MgB₂ films having columnar grain structure with their axis normal to the substrate. When an external magnetic field was applied parallel to the grain axis, an enhanced critical current density has been observed, and this result has been ascribed to flux pinning induced by grain boundaries. The shape of the angular dependence of critical current density and its magnetic field dependence showed a quite similar resemblance to those of YBa₂Cu₃O_x films containing columnar defects, implying a possible existence of linear defects in MgB₂ films of columnar structure. We propose that the amorphous regions at the vertex points of three or more grain boundaries observed in microstructural studies correspond to the linear defects and these linear defects anchor the end points of the flux line dislocations of Frank-Read sources, by which the shear in the flux line lattice is actuated. This assumed mechanism is found to reasonably explain the magnetic field dependence of the flux pinning force density of MgB₂ films with columnar grain structure.     

新型超导体MgB2的热电势和电阻率研究

测量了MgB₂的热电势和电阻率与温度的依赖关系.在100K—300K区间,热电势呈近似线性温度依赖关系,其斜率为正,表明载流子为空穴型且与能带贡献的图像相一致.与此对应,在此温区电阻率呈T²依赖关系.在100K以下,热电势和电阻率各自转变了其高温区的温度依赖关系.热电势在超导转变温度T_c(零电阻366K)到100K间有一宽峰,具有声子曳引峰的特征,表明电子-声子相互作用很强.估算了一些重要的参数,如带米能E_F、能带宽度 关键词： 新型超导体 热电势 电阻率     

Analysis of Mg-B compounds by means of Auger electron microprobe

For the development of a low-cost MgB₂ superconductor the “powder-in-tube” (PIT) technique is investigated. Mechanically alloyed MgB₂ powder provides a favorable microstructure and phase composition for the low temperature preparation of MgB₂ tapes with superconducting properties. The composition of sintered bulk samples and Fe-clad MgB₂ tapes made of mechanically alloyed MgB₂ has been investigated by Auger micro-analysis. Due to the process the samples contain about 15% oxygen. Pure MgB₂ crystallites were investigated as standard for stoichiometry and peak shape analysis.     

Influence of shock-wave pressure up to 65 GPa on the crystal structure and superconducting properties of MgB2

The influence of shock-wave pressure treatment up to 65 GPa on the crystal structure and the superconducting transition temperature of a polycrystalline MgB₂ sample has been investigated. X-ray diffraction measurements have revealed that the shock-wave pressure does not result in any irreversible structural phase transitions in the MgB₂, except for microdistortions formed in the crystal structure of the shock-wave pressure-treated MgB₂ sample. This conclusion is in agreement with the results of superconducting transition temperature measurements of a MgB₂ sample performed before and after its shock-wave pressure treatment.     

WEAK QUANTUM FLUX CREEP AND STRONG PINNING IN THE NEW SUPERCONDUCTOR MgB2

The newly discovered superconductor MgB₂ has a transition temperature T_c of about 40 K, which is touching the upper line of that predicted by the phonon-mediated Bardeen--Cooper--Schrieffer (BCS) theory. It is interesting to investigate the flux creep in MgB₂ and compare it with other superconductors. We have measured the magnetization relaxation of MgB₂ sintered at high temperature and high pressure. It is found that the quantum tunnelling and the thermally activated flux creep are very weak, implying a strong pinning in this material.     

Enhancement of the upper critical field of MgB2 by carbon-doping

We have measured the temperature dependence of the upper critical field, H_c2(T), of carbon-doped MgB₂. H_c2(T) does not follow the well-known Werthamer-Helfand-Hohenberg (WHH) result for a one-gap dirty superconductor but can be described well by the result of a recent theoretical calculation for a two-gap dirty superconductor. H_c2(0) of the carbon-doped material is determined to be between 29 and 38 T, substantially higher than that of pure MgB₂ (15-23 T).