X-ray pole-figure study of the epitaxial growth of C60 thin films on mica (001)

The growth of epitaxial C₆₀ thin films on mica(001) by thermal evaporation has been studied in detail by X-ray pole-figure measurements. The influence of the deposition rate, the substrate temperature and the film thickness on the in-plane epitaxial arrangements and the formation of twins has been investigated. It has been demonstrated that the C₆₀ growth is determined by two independent and equivalent C₆₀-crystal grain alignments (type-A and type-B). The nearly six-fold symmetry of the mica(001)-substrate surface offers the three-fold fcc-(111)-oriented C₆₀-crystal grains two equivalent crystal alignments. A high deposition rate of 0.5 Å/s is responsible for the formation of twins at a substrate temperature of 150°C, which diminishes by a higher substrate temperature of 200°C. By a decrease of the deposition rate down to 0.08 Å/s the twins vanish at a film thickness of 200 nm and at the substrate temperature of 150°C. Under the same sublimation conditions, in addition to the type-A and type-B crystal orientations, the growth of the thin C₆₀ films starts with a slight fibre texture which does not appear at a larger film thickness.     

C60 growth on Si(100), GaSe(0001) and GeS(001)

C₆₀ films have been grown in ultra high vacuum on various crystalline substrates and the structure of the films has been investigated by low energy electron diffraction (LEED) and high resolution electron energy loss spectroscopy (HREELS). The C₆₀ films form randomly oriented nanocrystals on Si(100), mesoscopic polycrystals on GaSe(0001) and microscopic single crystals on GeS(001). The vibrational structure of the C₆₀/substrate interfaces is analyzed in detail by HREELS carried out in the dipole and impact scattering regimes. It is shown that the epitaxy of C₆₀ on GeS(001) is induced by the weak van der Waals bonding and the peculiar corrugation of the substrate surface.     

Frictional and atomic-scale study of C60 thin films by scanning force microscopy

Scanning force microscopy (SFM) was employed to characterize C₆₀ island films in an ultra-high vacuum (UHV). The initial growth stage of C₆₀ on NaCl cleavage faces and nanotribological properties of this solid lubricant are investigated. In comparison to the NaCl(001) face, higher friction is measured on the C₆₀ islands, resulting in a ratio of friction of 13 for NaClC₆₀. The friction coefficient of the (111) oriented C₆₀ island is determined to be 0.15±0.05. High-resolution SFM images reveal the hexagonal lattice of the unreconstructed (111) top surfaces and the overgrowth relationships of the C₆₀ islands.     

Room-temperature epitaxial growth of CeO2(001) films on YSZ buffered Si(001) substrates

2 (001) epitaxial thin films deposited on Si(001) with yttria-stabilized zirconia buffers have been obtained for the first time at room temperature by pulsed-laser deposition. The influence of oxygen pressure on the crystal quality of CeO₂ was studied for the films deposited at 100 °C. The rocking curve full width at half maximum of the CeO₂(002) peak for films deposited at room temperature and 100 °C was between 1° and 2°, for oxygen pressures below 3×10^-2 mbar. The best crystal quality was obtained at around 3×10^-3 mbar. Epitaxial growth at room temperature was confirmed by cross-sectional transmission electron microscopy. Scanning electron microscopy and atomic force microscopy revealed very smooth surfaces for oxygen pressure below 3×10^-2 mbar, with rms roughness values around 0.3 nm over 5 μm×5 μm. Received: 25 September 1997/Accepted: 22 April 1998     

Tetragonal structure of thin nickel films on Cu(001)

The crystallographic structure of thin Ni films deposited on Cu(001) has been studied using Surface Extended X-ray Absorption Fine Structure (SEXAFS). Taking advantage of the linear polarization of the synchrotron radiation, we have shown that Ni adopts the Cu lattice parameter parallel to the interface. This lateral expansion induces a longitudinal compression of the unit cell, leading to a face centered tetragonal structure of the Ni films from 3 to 10 monolayers. The temperature dependence of the EXAFS oscillations has allowed to measure strain inside the Ni layers. Received 22 December 1998     

(001) textured PbTiO3 thin films grown on redopingn-Si by metalorganic chemical vapor deposition under reduced pressure

(001) textured PbTiO₃ thin films have been deposited on (001) redopingn-Si substrates by metalorgnic chemical vapor deposition (MOCVD) under reduced pressure, and the film ferroelectricity has been measured using the substrate as bottom electrode directly. Besides this investigation, a set of analysis including AFM surface morphology, SEM cross section morphology, electron-probe element analysis, XRD 0-20 scan and high temperature X-ray diffraction have been carried out to study the microstructure and phase transition process of the PbTiO₃ thin film.     

The growth of crystalline vapor deposited carbon-60 thin films

Thin films (25-2500 Å) of C₆₀ molecules have been deposited on both (001) NaCl and mica substrates at varying temperatures by resistive evaporation. Both electron diffraction and high resolution microscopy have been used to assess the degree of crystallinity, the orientational ordering and the nature of the defects present in these face-centered-cubic films. For NaCl, optimum conditions yielded polycrystalline films with a tendency towards a 110 orientation, while for mica, extended single crystal films have been fabricated which exhibit a 111 direction normal to the film surface.     

Investigation of GeS (001)

Various possibilities of the preparation of the clean GeS surface were studied. The LEED pattern of the (001) face of the GeS cleaved in situ exhibits clear ordinary reflections. The dimensions of the surface unit mesh agree well to within experimental error (6%) with the corresponding dimensions of the bulk unit cell.The author wishes to thank Dr M.imeková for performing scanning electron microscopy pictures and Dr K.Jurek CSc. for EDAX measurements. Special thanks go to Dr M.Závtová who called my attention to this interesting material.     

Structure and electrical characteristics of ICBD C60 films

Polycrystalline C₆₀ films are deposited onto a variety of substrates by ionized cluster beam deposition (ICBD) technique. The structure of the ICBD C₆₀ films are studied by transmission electron microscopy (TEM). The electrical characteristics of the ICBD C₆₀ films on silicon substrates are investigated by current-voltage (I–V) measurements. TheICBD C₆₀/p-Si and C₆₀/n-Si heterostructures show strong current rectification, which is analyzed using band theory.     

Growth and melting behaviour of thin in films on Ge(100)

Growth and melting behaviour of thin indium films on Ge(100) have been investigated by Auger-electron spectroscopy (AES), atomic force microscopy (AFM) and perturbed angular correlation (PAC) spectroscopy, respectively. At room temperature inidium is found to grow in three-dimensional islands even at submonolayer coverages. A very rough film surface is observed for thicknesses up to 230 ML. The melting behaviour of such films has been studied by PAC. A reduction of the melting temperature T _m as well as a strong supercooling of the films is observed. The electric field gradient for ¹¹¹In(¹¹¹Cd) in the indium islands is determined as a function of temperature and is used to monitor the local crystalline order of the films up to temperatures just below the melting point.     

Oxygen diffusion through thin Pt films on Si(100)

We have investigated the diffusion of oxygen through evaporated platinum films on Si(100) upon exposure to air using substrates covered with Pt films of spatially and continuously varying thickness (0–500 Å). Film compositions and morphologies before and after silicidation were characterized by modified crater edge profiling using scanning Auger microscopy, energy-dispersive X-ray microanalysis, scanning tunneling microscopy, and transmission electron microscopy. We find that oxygen diffuses through a Pt layer of up to 170 Å forming an oxide at the interface. In this thickness range, silicide formation during annealing is inhibited and is eventually stopped by the development of a continuous oxide layer. Since the platinum film consists of a continuous layer of nanometer-size crystallites, grain boundary diffusion of oxygen is the most probable way for oxygen incorporation. The diffusion constant is of the order of 10^–19 cm²/s with the precise value depending on the film morphology.     

Ground state magnetic properties of ultrathin fcc Fe and Co films on Cu(001) surfaces

The oxidation characteristics of silicon implanted with a low dose of nitrogen (1–3×10¹⁵cm^–2) have been studied for dry oxidation conditions at 1020°C. The wafers were subjected to a pre-oxidation annealing. Complete inhibition of the oxide growth occurs in the initial stage of oxidation, while the oxidation rate for prolonged oxidation is identical to that for pure silicon. The oxidation resistance increases with the implantation dose. The resistance is attributed to the formation of a nitrogen-rich surface film during annealing. This layer, which consists of only a few monolayers, is presumably composed of oxynitride. The electrical characteristics of MOS capacitors formed on implanted wafers show that the interface state density is not significantly increased by the low-dose N implantation.     

Step-like growth of Bi2Sr2CaCu2O8 films on off axis oriented (001) SrTiO3

High-quality Bi₂Sr₂CaCu₂O₈ (BSCCO) films were grown by means of pulsed-laser deposition on 10° off-axis oriented (001) SrTiO₃ substrates. The films exhibit a step-like morphology and they are properly oriented along the (001) direction. Their normal-state resistivity measured along the tilt (off-axis (100) direction of the substrate) was, typically, 260 times higher than that along the (010) direction. Such films reveal a transverse Seebeck-effect which significantly exceeds that observed with YBa₂Cu₃O₇ (YBCO).     

Thermal expansion of thin C60 films

The thermal expansion coefficient a and structure of C₆₀ films with thickness t∼3–10 nm were investigated in the temperature interval from room to liquid-nitrogen temperature by electron-optical methods. The thermal expansion coefficient was determined from the temperature shift of the diffraction maxima in the electron diffraction patterns. The objects of investigation were epitaxial C₆₀ films condensed in vacuum on a (100) NaCl cleavage surface and oriented in the (111) plane. A surface-induced size effect in the thermal expansion coefficient was observed. It was established that as t decreases α _f increases and is described well by the relation α _f=17·10⁻⁶ K⁻¹+8.3·10⁻⁵ nm K⁻¹ t ⁻¹. This relation was used to estimate the linear expansion coefficient α _s of the C₆₀ surface in the (111) plane as α _s=60·10⁻⁶K⁻¹, which is several times larger than the bulk value. The experimental results agree satisfactorily with the theoretical calculations of the mean-square displacements of molecules located in a region near the surface. Zh. éksp. Teor. Fiz. 114, 1868–1875 (November 1998)     

Binding of single gold atoms on thin MgO(001) films

In the present Letter the first electron paramagnetic resonance spectra of single metal atoms on a single crystalline oxide surface are presented. For Au atoms on a MgO(001) film investigated here an analysis of the angular dependent resonance positions and the hyperfine coupling to (17)O shows that the atoms are bound on top of oxygen ions on the terrace of the film. This result is in perfect agreement with scanning tunneling microscopy measurements at 5 K presented here. The measured hyperfine matrix components allow an experimental verification of the theoretically proposed binding mechanism of Au atoms on MgO. In particular, the large reduction of the isotropic hyperfine coupling constant of supported Au as compared to free atoms is not due to a charge transfer at the interface but a hybridization of orbitals and a resulting polarization of the unpaired electron.     

MOCVD growth, structure and magnetic properties of Fe films grown on GaAs (001) substrates

Thin iron films have been grown on (001) GaAs substrates by low pressure metal organic chemical vapor deposition (LP-MOCVD) at different temperatures with the pressure of 150 Torr. X-ray diffraction (XRD) analysis showed that all films have only one strong diffraction peak (110). The surface of Fe film became smooth with increasing the growth temperature. Magnetization measurements showed that the Fe films grown at different temperatures were ferromagnetic with easy axis parallel to the film surface and hard axis perpendicular to the substrates. The field dependence of magnetization along two axes showed a remarkable difference, implying that the samples have strong magnetic anisotropy. Furthermore, when the applied magnetic field is perpendicular to the Fe surface, a sharp jump in the hysteresis loop could be observed, followed by a broad shoulder, which is related to the interface effect, the existence of carbon and the formation of 180^°/90^° magnetic domains.     

Bi(110)薄膜在NbSe_2衬底上的扫描隧道显微镜研究

二维拓扑绝缘体因其特殊的能带结构带来的新奇物理性质,成为近年来凝聚态物理的研究热点.尤其是在引入超导电性之后,二维拓扑绝缘体中可能存在马约拉纳费米子(Majorana fermion),因此在量子计算方面具有重大应用前景.在Bi(111)薄膜被证实为二维拓扑绝缘体之后, Bi(110)薄膜引起了广泛关注,然而其拓扑性质还存在争议.本文利用分子束外延技术在室温低生长速率环境下成功制备出了高质量的单晶Bi(110)薄膜.通过扫描隧道显微镜测量发现,薄膜以约8个原子层厚度为分界,从双层生长转变为单层生长模式.结合隧道谱测量发现,在NbSe_2衬底上生长的Bi(110)薄膜因为近邻效应而具有明显的超导性质,但并未显示出拓扑边缘态的存在.此外,对薄膜中特殊的量子阱态现象也进行了讨论.     

Pseudo-epitaxial C60 films prepared by a hot-wall method

We have used both reflection-geometry and grazing-incidence-geometry X-ray scattering to study thin films of C₆₀ evaporated onto mica substrates via a hot-wall technique. The growth mode yields close-packed C₆₀ planes, which are parallel to the substrate surface and which exhibit out-of-plane correlation lengths of 850 Å. In the film plane the C₆₀ is at best pseudo-epitaxial, with a 0.9° distribution of crystallite orientations, a 450 Å in-plane correlation length, and a 3.7% lattice mismatch, better than obtained by other thin film techniques but far from the accepted definition of single crystal thin film epitaxy.