强脉冲X射线辐照Si-SiO2界面对C-V 和I-V特性曲线的影响

 利用强脉冲X射线对Si-SiO₂界面进行了辐照，测量了C-V曲线和I-V曲线。实验发现，经过强脉冲X射线对Si-SiO₂界面进行的辐照，使C-V曲线产生了正向漂移，这一点与低剂量率辐射结果不同；辐射后，感生I-V曲线产生畸变；特别地，从I-V曲线上还反映出强脉冲X射线辐照的总剂量效应造成电特性 参数明显退化，最后甚至失效。讨论了强脉冲X射线辐照对Si-SiO₂界面产生损伤的机理，并对实验结果进行了解释。     

Ni70Co30/Cu磁性金属多层膜界面元素分布的X射线异常散射研究

应用X射线异常散射技术研究了[Ni₇₀Co₃₀(25A)/Cu(20A)]₂₀多层膜的界面结构, 结果表明, 退火前后Cu/Ni₇₀Co₃₀和Ni₇₀Co₃₀/Cu界面的温度行为不同.对于制备态样品, 界面结构是非对称的, 在Cu/Ni₇₀Co₃₀界面, 存在一个8A厚的CuNi₃过渡层和一个4A厚的NiCo层. 然而, Ni₇₀Co₃₀/Cu界面却不存在任何扩散. 285\textcelsius 2h退火后,Ni₇₀Co₃₀/Cu界面开始发生扩散, 产生了一个12A厚的CuNi₂Co过渡层. X射线能量分别在Co, Ni, Cu K吸收边附近的X射线漫散射实验, 揭示了在Ni₇₀Co₃₀/Cu多层膜的界面处, Cu与Ni和Co具有不同的横向关联长度, 显示了不均匀的横向分布.     

快重离子辐照C60薄膜的强电子激发效应研究

利用能量为2.0GeV的¹³⁶Xe和2.7GeV的²³⁸U离子对C₆₀薄膜进行了辐照,并用傅立叶变换红外光谱、X射线衍射谱和拉曼散射技术分析了辐照过的C₆₀样品,在傅立叶变换红外光谱上,首次观察到一个位于670cm^－1处的,表征未知结构的新峰,研究了其强度随电子能损和辐照剂量的变化规律.分析结果表明,电子能量转移主导了C₆₀薄膜的损伤过程;而损伤的部分恢复是由强电子激发的退火效应引起的;另外,离子的速度在损伤的建立过程中也起了一定的作用     

低温低剂量率下金属-氧化物-半导体器件的辐照效应

对金属氧化物半导体(MOS)器件在低剂量率γ射线辐照条件下的剂量率效应以及温度效应进行了研究.对不同剂量率、不同温度辐照后MOS器件的阈值电压漂移进行了比较.结果表明,低剂量率辐照下,感生界面态要受到辐照时间的长短以及生成的氢离子数目的影响,辐照时间越长,生成的氢离子越多,感生界面态密度越大;温度对界面态的影响与界面态建立的时间有关,低温辐照时,界面态建立的时间要加长 关键词： 辐照效应 阈值电压漂移 低剂量率 低温 界面态     

飞秒激光-物质相互作用产生Kα X射线

 用无色散X射线谱仪分别在靶前后测量了飞秒激光辐照铜箔产生的Kα X射线,获得了能量转换效率。入射激光脉冲宽度33 fs,能量在50 mJ～5 J,强度10₁₇～10₁₉ W/cm₂。靶后发射的Kα X射线强度随入射激光能量的增加而增加,其单色性较靶前好。采用100 μm厚靶,其能量转换率为2.2×10_-5。     

国产高Z闪烁晶体的辐照损伤研究

在总强度为10⁵Ci^的60Co γ射线辐照装置上开展了国产高Z闪烁晶体的辐照损伤研究.在5×10³—7.5×10⁵rad剂量范围内测量了小尺寸BGO晶体样品的辐照损伤效应,观察到损伤随剂量增加逐渐趋于饱和的现象;辐照损伤的自然恢复过程可用三组时间常数表征的指数函数描述.在5×10⁵rad剂量下,考察了BaF₂,CsI(Tl)以及ZnWO₄晶体小尺寸样品的辐照损伤效应.发现了BaF₂的严重损伤情况,初步分析原因可能是晶体中某些微量杂质的存在.     

脉冲激光沉积的金属原子团簇的电子状态及生长的研究

 介绍了采用X射线光电子谱(XPS)等技术研究脉冲激光沉积在Ni、Mo、C、NaCl(100)表面的Cu、Au原子团簇的电子状态;结合Cu₂p_3/2 X射线光电子谱峰和Cu L₃M_4,5M_4,5俄歇跃迁分离了电子结合能的初态和终态贡献,得出了它们随Cu表面浓度变化的关系,并对之作出了解释。使用XPS、RBS、TEM三项技术研究了Au在NaCl(100)表面的生长过程,通过计算得出了在不同表面浓度下Au原子团簇的平均高度和表面覆盖率。     

电子束在VO2薄膜中引起的价态、相结构和光学性能的改变

 利用能量为1.7MeV, 注量分别为1.25×10¹³/cm², 1.25×10¹⁴/cm², 1.25×10¹⁵/cm²的电子束辐照VO₂薄膜,采用XPS, XRD等测试手段对电子辐照前后的样品进行分析,并研究了电子辐照对样品相变过程中光透射特性的影响。结果表明电子辐照引起VO₂薄膜中V离子出现价态变化现象,并使薄膜的X射线衍射峰发生变化。电子辐照在样品中产生的这些变化显著改变了VO₂薄膜的热致相变光学特性。     

质子辐照空间级硅橡胶的正电子淹没寿命谱研究

 用正电子淹没寿命谱方法（PALS）研究了质子辐照对空间级硅橡胶KH-L-Y微观结构的影响。试验结果表明，PALS谱所揭示的最长寿命成分的t₃, I₃及自由体积分数Vf随辐照剂量的增加开始明显下降；而当辐照剂量大于10¹⁵cm^-2后，随剂量的增加平缓上升。辐照剂量小于10¹⁵cm^-2时，质子辐照使硅橡胶自由体积减小，分子链间堆砌紧密；辐照剂量大于10¹⁵cm^-2时，质子辐照使硅橡胶自由体积增大。交联密度及DMA测试结果同样表明，质子辐照在剂量较小时硅橡胶的交联密度及玻璃化转变温度增加，辐照以交联效应为主；而剂量较大时辐照降解占优势。     

FTIR研究快中子辐照直拉硅中的VO2

快中子辐照直拉硅(CZ-Si)经400—450℃热处理后，空位_双氧复合体(VO₂)是其 主要 的缺陷.在300—500℃热处理快中子辐照的CZ_Si后，IR光谱中有919．6cm^-1和 1006cm^-1两个吸收峰伴随VO₂(889cm^-1)出现，这两个IR吸收 峰是VO₂的一种亚稳态缺陷(O-V-O)引起的，此缺陷态是由一个VO(A中心)与次临近的一个 间隙氧原子(O_i)相互作用所形成的.在300℃延长退火时间或升高退火温度，都 会使(O -V-O)转变为稳态VO₂.辐照剂量在10¹⁹数量级，经400—450℃热处 理所形成的缺陷主要为多空位型，而VO₂被抑制.     

Modeling of radiation-induced charge trapping in MOS devices under ionizing irradiation

The numerical model of the radiation-induced charge trapping process in the oxide layer of a MOS device under ionizing irradiation is developed; the model includes carrier transport, hole capture by traps in different states, recombination of free electrons and trapped holes, kinetics of hydrogen ions which can be accumulated in the material during transistor manufacture, and accumulation and charging of interface states. Modeling of n-channel MOSFET behavior under 1 MeV photon irradiation is performed. The obtained dose dependences of the threshold voltage shift and its contributions from trapped holes and interface states are in good agreement with experimental data.     

Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors

The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises(LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease,while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated.Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.     

基于环形栅和半环形栅N沟道金属氧化物半导体晶体管的总剂量辐射效应研究

在商用0.35 μm互补金属氧化物半导体工艺上制备了两种栅氧化层厚度(t_ox)的条形栅、环形栅和半环形栅N沟道金属氧化物半导体 (n-channel metal oxide semiconductor, 简记为NMOS) 晶体管, 并进行了2000 Gy(Si)的总剂量辐射效应实验. 实验结果显示, 栅氧厚度对阈值电压漂移的影响大于栅氧厚度的3次方. 对于t_ox为11 nm的低压NMOS晶体管, 通过环形栅或半环形栅的加固方式能将其抗总剂量辐射能力从300 Gy(Si)提高到2000 Gy(Si)以上; 而对于t_ox为26 nm的高压NMOS晶体管, 通过环栅或半环栅的加固方式, 则只能在低于1000 Gy(Si)的总剂量下, 一定程度地抑制截止漏电流的增加. 作为两种不同的版图加固方式, 环形栅和半环形栅对同一t_ox的NMOS器件加固效果类似, 环形栅的加固效果略优于半环形栅. 对于上述实验结果, 进行了理论分析并阐释了产生这些现象的原因. 关键词： 环形栅 半环形栅 总剂量 辐射效应     

电离辐射对部分耗尽绝缘体上硅器件低频噪声特性的影响

本文针对辐射前后部分耗尽结构绝缘体上硅(SOI)器件的电学特性与低频噪声特性开展试验研究. 受辐射诱生埋氧化层固定电荷与界面态的影响, 当辐射总剂量达到1 M rad(Si) (1 rad = 10^-2 Gy)条件下, SOI器件背栅阈值电压从44.72 V 减小至12.88 V、表面电子有效迁移率从473.7 cm²/V·s降低至419.8 cm²/V· s、亚阈斜率从2.47 V/dec增加至3.93 V/dec; 基于辐射前后亚阈斜率及阈值电压的变化, 可提取得到辐射诱生界面态与氧化层固定电荷密度分别为5.33×10¹¹ cm^{- 2}与2.36×10¹² cm^-2. 受辐射在埋氧化层-硅界面处诱生边界陷阱、氧化层固定电荷与界面态的影响, 辐射后埋氧化层-硅界面处电子被陷阱俘获/释放的行为加剧, 造成SOI 器件背栅平带电压噪声功率谱密度由7×10^{- 10} V²·Hz^-1增加至1.8×10^-9 V² ·Hz^-1; 基于载流子数随机涨落模型可提取得到辐射前后SOI器件埋氧化层界面附近缺陷态密度之和约为1.42×10¹⁷ cm^-3·eV^-1和3.66×10¹⁷ cm^-3·eV^-1. 考虑隧穿削弱因子、隧穿距离与时间常数之间关系, 本文计算得到辐射前后埋氧化层内陷阱电荷密度随空间分布的变化.     

Effect of 30 Mev Li 3+ ion and 8 MeV electron irradiation on n-channel MOSFETs

The effect of 30 v MeV Li 3+ ion and 8 v MeV electron irradiation on the threshold voltage ( V TH ), the voltage shift due to interface trapped charge ( j V Nit ), the voltage shift due to oxide trapped charge ( j V Not ), the density of interface trapped charge ( j N it ), the density of oxide trapped charge ( j N ot ) and the drain saturation current ( I D v Sat ) were studied as a function of fluence. Considerable increase in j N it and j N ot , and decrease in V TH and I D v Sat were observed in both types of irradiation. The observed difference in the properties of Li 3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 v MeV Li 3+ ion irradiation produce more damage when compared to the 8 v MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500 v °C.     

γ射线总剂量辐照对单轴应变Si纳米n型金属氧化物半导体场效应晶体管栅隧穿电流的影响

基于γ射线辐照条件下单轴应变Si纳米n型金属氧化物半导体场效应晶体管(NMOSFET)载流子的微观输运机制,揭示了单轴应变Si纳米NMOSFET器件电学特性随总剂量辐照的变化规律,同时基于量子机制建立了小尺寸单轴应变Si NMOSFET在γ射线辐照条件下的栅隧穿电流模型,应用Matlab对该模型进行了数值模拟仿真,探究了总剂量、器件几何结构参数、材料物理参数等对栅隧穿电流的影响.此外,通过实验进行对比,该模型仿真结果和总剂量辐照实验测试结果基本符合,从而验证了模型的可行性.本文所建模型为研究纳米级单轴应变Si NMOSFET应变集成器件可靠性及电路的应用提供了有价值的理论指导与实践基础.     

Research on total-dose hardening for H-gate PD NMOSFET/SIMOX by ion implanting into buried oxide

In this work,we investigate the back-gate I-V characteristics for two kinds of NMOSFET/SIMOX transistors with H gate structure fabricated on two different SOI wafers.A transistors are made on the wafer implanted with Si+ and then annealed in N2,and B transistors are made on the wafer without implantation and annealing.It is demonstrated experimentally that A transistors have much less back-gate threshold voltage shift AVth than B transistors under X-ray total dose irradiation.Subthreshold charge separation technique is employed to estimate the build-up of oxide charge and interface traps during irradiation,showing that the reduced △Vth for A transistors is mainly due to its less build-up of oxide charge than B transistors.Photoluminescence (PL) research indicates that Si implantation results in the formation of silicon nanocrystalline (nanocluster) whose size increases with the implant dose.This structure can trap electrons to compensate the positive charge build-up in the buried oxide during irradiation,and thus reduce the threshold voltage negative shift.     

Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs

The bias dependence of radiation-induced narrow-width channel effects(RINCEs) in 65-nm n-type metal-oxidesemiconductor field-effect transistors(NMOSFETs) is investigated. The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.     

Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

This paper describes the effect of ionizing radiation on the interface properties of Al/Ta₂O₅/Si metal oxide semiconductor (MOS) capacitors using capacitance–voltage (C–V) and current–voltage (I–V) characteristics. The devices were irradiated with X-rays at different doses ranging from 100?rad to 1?Mrad. The leakage behavior, which is an important parameter for memory applications of Al/Ta₂O₅/Si MOS capacitors, along with interface properties such as effective oxide charges and interface trap density with and without irradiation has been investigated. Lower accumulation capacitance and shift in flat band voltage toward negative value were observed in annealed devices after exposure to radiation. The increase in interfacial oxide layer thickness after irradiation was confirmed by Rutherford Back Scattering measurement. The effect of post-deposition annealing on the electrical behavior of Ta₂O₅ MOS capacitors was also investigated. Improved electrical and interface properties were obtained for samples deposited in N₂ ambient. The density of interface trap states (D_it) at Ta₂O₅/Si interface sputtered in pure argon ambient was higher compared to samples reactively sputtered in nitrogen-containing plasma. Our results show that reactive sputtering in nitrogen-containing plasma is a promising approach to improve the radiation hardness of Ta₂O₅/Si MOS devices.