拉伸形变下BC3纳米管的能带结构

运用紧束缚能带理论,研究拉伸形变下BC₃纳米管的能带结构. 研究表明:随着拉伸和压缩强度的不断增加,BC₃纳米管的导带能级和价带能级逐渐靠近,最终发生能带交叠. 压缩形变下能带的交叠程度可达05 eV,而拉伸形变下只有02 eV. 对于扶手椅型BC₃纳米管,随着拉伸和压缩的不断增加,BC₃纳米管首先由直接半导体转化为间接半导体,进而发生能带的交叠,表现出金属性. 在无形变时,扶手椅型BC₃纳米 关键词： 3纳米管')" href="#">BC₃纳米管 能隙 拉伸形变 半导体     

Yb2.75C60同步辐射光电子能谱

在超高真空系统中制备了Yb275C60薄膜.对样品进行了同步辐射光电子能谱研究.在费米能级以下约5 eV范围内的谱数据由Yb275C60价带（C60分子轨道LUMO，HOMO和HOMO 1导出的能带）和芯态（Yb 4f7/2，4f5/2）能级构成.用紫外能区不同能量的入射光子，用C 2p和Yb 4f光电离截面随光子能量的不同变化规律，通过定量拟合，得到了对谱线有贡献的上述各个组分的峰位、峰宽和强度.结果表明，光子能量高于约300 eV时，芯态4f的贡献使得实验结果远远偏离价带的本征态密度分布.因此，研究Yb275C60价态时，应使用能量低于300 eV的光子.对实验和拟合结果分析，发现了类似纯C60的光电离截面振荡现象.振荡幅度相对于纯C60较小，反映了化合物中C60分子的化学环境对光电离截面振荡现象起着不可忽略的作用. 关键词： Yb275C60 同步辐射光电子能谱 光电离截面振荡     

MgCNi3的电子结构、光学性质与超导电性

用第一性原理的密度泛函能带计算方法研究了新近发现的超导体MgCNi3的电子能带结构.计算结果表明其电子结构的基本特征是：Ni的3d态和C的2p态的杂化组成了MgCNi3的导带，费米面附近的物理性质主要由来源于Ni的3d电子态决定.在费米能级(EF)以下30eV的范围内，Ni 3d态构成了能带色散微弱的密集电子态，EF恰好落在Ni 3dyz+zx和3d3z2-r2电子态密度.C 2p态分布在EF以下40—70eV的区域内，Mg主要是以二价离子Mg2+的形式存在.Mg原子的掺杂导致了Ni原子的3d态基本上全部占据，引起Ni原子磁矩的消失.费米能级EF处的态密度N(ＥＦ)是550(states/eV·cell)，由此得到的Sommerfeld常数γeal～445mJ/mol·K2.基于第一性原理的光学性质的计算结果表明：在0—12eV的范围内光吸收主要是从占据的Ni 3d态向C　2p和Ni4s的跃迁.根据这些结果得出结论：MgCNi3的超导电性基本上是强耦合的BCS电子-声子作用机理. 关键词： MgCNi3 高温超导体 电子结构 光学性质     

铁电单晶0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3折射率的研究

用最小偏向角法在20℃下精确测量了0.62Pb(Mg_1/3Nb_2/3)O_{3< /sub>-0.38PbTiO3( 0.62PMN-0.38PT)单晶的折射率，给出了该温度下折射率色散的Sellmeier方程.研究了能带 结构与折射率的关系，计算了样品的Sellmeier光学系数：对no，E0=5.50eV,λ0=0.2 26μm，Ｓ０=1.004×10¹⁴m^-2，Ed=28.1 0eV；对ne，Ｅ0=5.57eV,λ 0=0.223μm，S0=1.017×10¹⁴m^-2，Ed=28.10eV.A BO3型钙钛矿材料中，BO6八面体基元决定了晶体的能带结构，对折 射率产生重要影响. 关键词： PMNT单晶 折射率 Sellmeier光学系数}     

GdN,GdP和GdAs的电子结构：第一性原理研究

用从头计算第一性原理对Gd-V化合物进行了电子结构与磁性的理论研究.计算的理论基础是密度泛函理论和局域(自旋)密度近似,并应用了相对论性LMTO-ASA计算方法.结果表明Gd-V的非自旋极化能带均为半金属特征.在进行宽能带的自能修正后GdN的非自旋极化能带是半导体行为(E_{g≈019eV).自旋极化的LSDA计算结果表明Gd-V均为半金属性的能带结构,即空带与价带有微弱的交叠.在布里渊区的X点和Γ点,分别有n型和p型色散的能带穿过费米面.对于GdN而言,它的上自旋子带为半金属能带,而下自旋子带却 关键词：}     

OsSi2电子结构和光学性质的研究

采用基于第一性原理的密度泛函理论赝势平面波方法,对正交相OsSi₂的电子结构、态密度和光学性质进行了理论计算,能带结构计算表明它是一种间接带隙半导体,禁带宽度为0813 eV;其价带主要由Os的5d和Si的3p态电子构成;导带主要由Si的3s,3p以及Os的5d态电子构成;静态介电常数ε₁（0）=1543; 折射率n＝393并利用计算的能带结构和态密度分析了OsSi₂的介电函数、吸收系数、折射率、反射率、 关键词： 2')" href="#">OsSi₂ 第一性原理 电子结构 光学性质     

Mg2Si的电子结构和热电输运性质的理论研究

利用全势线性缀加平面波法,对Mg₂Si的几何结构和电子结构进行了计算,得到了稳定的晶格参数以及能带和电子态密度.能带结构表明,Mg₂Si为间接带隙半导体,禁带宽度为020 eV.在此基础上利用玻尔兹曼输运理论和刚性带近似计算了材料的电导率、Seebeck系数和功率因子.结果表明,在温度为700 K时p型和n型掺杂的Mg₂Si功率因子达到最大时的最佳载流子浓度分别为7749×10¹⁹ cm^-3和 关键词： 2Si')" href="#">Mg₂Si 全势线性缀加平面波法 热电输运性质     

一种新型混合双包层光子晶体光纤的色散特性研究

以多极法理论为基础,设计了一种混合双包层结构的光子晶体光纤.通过改变其五层空气孔的四个结构参数（内层空气孔直径、外层空气孔直径、六边形孔间距和八边形孔间距）,理论上实现了色散绝对值在144—20 μm的波段内变化仅为125 ps·km^-1·nm^-1的平坦色散特性.在此情况下对其损耗进行了数值模拟,使所设计的光纤在144—20 μm的宽波段范围内具有小于0005 dB/km的低限制损耗特性. 关键词： 光子晶体光纤 多极法 平坦色散 限制损耗     

铁电单晶0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3折射率的研究

用最小偏向角法在20℃下精确测量了0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3(0.62PMN-0.38PT)单晶的折射率,给出了该温度下折射率色散的Sellmeier方程.研究了能带结构与折射率的关系,计算了样品的Sellmeier光学系数:对no,E0=5.50eV,λ0=0.226μm,S0=1.004×1014m-2,Ed=28.10eV;对ne,E0=5.57eV,λ0=0.223μm,S0=1.017×1014m-2,Ed=28.10eV.ABO3型钙钛矿材料中,BO6八面体基元决定了晶体的能带结构,对折射率产生重要影响.     

C60分子电子性质的理论研究

根据C₆₀分子的结构特征,构造了电子的局域波函数,在该函数表象下计算了电子格点之间的跳跃能量.对不等性sp³杂化,通过优化计算,当有效核电荷数Z=1.112时,得到的能隙(最低未占据轨道(LUMO)与最高占据轨道(HOMO)之间的能量差)、能带宽度以及电离能阈值分别为1.70eV,12.19eV和8.13eV.这与实验结果符合得较好.与之相应的电子跳跃能量是：最近邻分别为-2.299eV,-2.113eV;次近邻分别为0.103eV,0.170eV;三近邻分别为 关键词：     

Electronic band structure of Cu3Au: An angle-resolved photoemission study along the [111]-direction

High-resolution normal photoemission (ARPE) spectra have been recorded for Cu₃Au(111) with the use of polarized synchrotron and rare-gas resonance radiation in the photon energy range from 9 to 27 eV. It is for the first time that dispersions of the gold-like bands have been found experimentally. Using a fully relativistic layer-KKR photoemission formalism, occupied and unoccupied bands as well as one-step-model photoemission spectra have been calculated. The comparison of calculated spectra with experimental ones and the observation of direct-transition resonances upon photon energy near the Brillouin zone-center reveal a shift of the unoccupied ground-state bands by about +2.5 eV (self-energy shift). The direct-transition structures in the experimental spectra have been exploited to determine the dispersions of the occupied bands along the [111] direction (A line in k space). In order to determine the wave vector of the experimental direct transitions we used as final state that calculated unoccupied band along [111], which also exists in pure copper and gold up to about 20 eV above the Fermi energy (“unfolded” band structure), shifted by + 2.5 eV. The experimental occupied bands with Cu character are in very good agreement with theory after shifting the latter by about 0.3 eV to lower energy, whereas somewhat bigger discrepancies exist for the gold-like bands.     

Experimental energy bands,exchange splittings,and lifetimes for Ni in the vicinity of the x-point

Angle-resolved photoelectron spectroscopy using synchrotron radiation has been used to determine energy band dispersions along the ΓKX and ΓX directions in nickel. A detailed picture of spin-dependent energy levels and band topology around the symmetry point X has been derived. We have measured the exchange splitting for different band symmetries and find the splitting for the X₂-S₄ band along (110) to be 0.17 eV. For the X₅-S₃ band we find a splitting of 0.33 eV which is in close agreement with the value found earlier for the Σ₂ band. This can be explained by different self-energy corrections for t_2g and e_g-type states respectively. Our values for the energy positions (inverse lifetimes) are the following: X_2↓ = ?0.04 eV (0.08 eV, X_2↑ = ?0.24 eV (0.19 eV), X_5↑ = ?0.11 eV.     

Vacancy-induced states on VC0.80 (110) identified using angle-resolved photoelectron spectroscopy

Angle-resolved photoemission measurements have been performed on the (110) face of a VC_0.80 single crystal using resonance radiation. A vacancy-induced peak is identified at about 1.7 eV below the Fermi energy. Comparison of the experimental peak dispersions with direct transitions between energy bands of VC_1.0 is also made.     

Dielectric function of YBa2Cu3O7-δ between 50 meV and 50 eV

Electronic excitations with polarization parallel to the CuO₂-planes in single-crystalline YBa₂Cu₃O₇ and YBa₂Cu₃O₆ have been investigated by optical reflectance and by highenergy electron energy-loss spectroscopy in transmission in the energy ranges from 50 meV to 6 eV and 0.2 eV to 150 eV, respectively. From a combination of these experimental data the dielectric function, the reflectivity and the optical conductivity have been obtained in a wide energy range. The observed spectra are interpreted in terms of optical phonons, free-carrier absorption, transitions across the charge-transfer gap, further interband transitions, low-lying core-level excitations, excitonic transitions and valence conservingd-d transitions within the Cu 3d shell combined with O 2p intraband transitions. The charge carrier plasmon and the 4 eV-excitation in YBa₂Cu₃O₆ show quadratic dispersions in momentum transfer. From the dispersion constant of the plasmon a mean value of the Fermi velocity of the charge carriers parallel to the CuO₂ planes has been derived.     

First-principles study on electronic structure of Sr2Bi2O5 crystal

The electronic structure of Sr₂Bi₂O₅ is calculated by the GGA approach. Both of the valence band maximum and the conduction band minimum are located at Γ-point. This means that Sr₂Bi₂O₅ is a direct band-gap material. The wide energy-band dispersions near the valence band maximum and the conduction band minimum predict that holes and electrons generated by band gap excitation have a high mobility. The conduction band is composed of Bi 6p, Sr 4d and O 2p energy states. On the other hand, the valence band can be divided into two energy regions ranging from −9.5 to −7.9 eV (lower valence band) and from −4.13 to 0 eV (upper valence band). The former mainly consists of Bi 6s states hybridizing with O 2s and O 2p states, and the latter is mainly constructed from O 2p states strongly interacting with Bi 6s and Bi 6p states.     

Conductivity relaxations in single crystals of sodium chloride containing suzuki phase precipitates

Single crystals of NaCl containing volume fractions of up to 28% of the Suzuki phase Cd□Na₆Cl₈ have been subjected to a.c. electrical measurements over a range of frequencies (10-10⁷ Hz). Complex modulus plots and modulus spectra reveal two distinct electrical relaxations arising in the matrix, and the precipitates. The Maxwell layer model and the Maxwell-Wagner model for dispersions of two phases are used to separate the two ionic conductivities. The activation energy for ionic conduction in the Suzuki phase is found to be 0.93 ± 0.05 eV, which is in agreement with a previously reported value obtained on polycrystalline Cd□Na₆Cl₈.     

Surface electronic structure of single-domain Si( 001) 2 × 2-Al: an angle-resolved photoelectron spectroscopy study using synchrotron radiation

The electronic structure of a single-domain Si(001)2 × 2-Al surface has been studied by angle-resolved photoelectron spectroscopy (ARPES) using synchrotron radiation. Through detailed ARPES measurements along various symmetry axes of the surface Brillouin zone, the existence and dispersions of five surface states are identified, one at binding energies a little less than 1 eV and the others between 1 and 2 eV. The origin of the surface states are discussed in terms of the Al-dimer structures on Si(001).     

Electronic structure of prototype AFe<Subscript>2</Subscript>As<Subscript>2</Subscript> and ReOFeAs high-temperature superconductors: A comparison

We have performed ab initio LDA calculations of the electronic structure of newly discovered prototype high-temperature superconductors AFe₂As₂ (A = Ba, Sr) and compared it with the previously calculated electronic spectra of ReOFeAs (Re = La, Ce, Pr, Nd, Sm). In all cases, we obtain almost identical densities of states in a rather wide energy interval (up to 1 eV) around the Fermi level. Energy dispersions are also very similar and almost two dimensional in this energy interval, leading to the same basic (minimal) model of the electronic spectra, determined mainly by Fe d orbitals of the FeAs layers. The other constituents, such as A ions or rare-earth Re (or oxygen states) are more or less irrelevant for superconductivity. LDA Fermi surfaces for AFe₂As₂ are also very similar to that of ReOFeAs. This makes the more simple AFe₂As₂ a generic system to study the high-temperature superconductivity in FeAs-layered compounds. The text was submitted by the authors in English.     

Polymer cation effect on the stability to electrolytes of an ethanol-acrylate methacrylate—water,coacervated system

Colloidal, aqueous dispersions of certain acrylate-methacrylate copolymers with cationic groups have been prepared by a coacervation technique using ethanol as solvent and water as nonsolvent. Stability of the dispersions to electrolytes (sodium chloride, sodium sulfate, and sodium carbonate) increased markedly (up to 10 times) with a small (2-fold) increase in polymer cation content. The polymer dispersions were most sensitive to sodium sulfate and least sensitive to sodium chloride. Sodium carbonate was, in turn, less effective than the sulfate in flocculating the dispersions; this observation relates to the partial hydrolysis of the CO₃ ^2- anion to less readily adsorbed OH^? and HCO₃ ^? anions.