Electrical switching studies on As<Subscript>40</Subscript>Te<Subscript>60-x</Subscript>Se<Subscript>x</Subscript> and As<Subscript>35</Subscript>Te<Subscript>65-x</Subscript>Se<Subscript>x</Subscript> glasses

The I–V characteristics of bulk As₄₀Te_60-xSe_x and As₃₅Te_65-xSe_x glasses have been studied with a current sweep of 0–18 mA-0, over a wide range of compositions (4≤x≤22). All the glasses studied showed a threshold electrical switching behaviour. The number of switching cycles withstood by the samples has been found to depend on the ON-state current. It is seen that the switching voltages increase with increase in selenium content. Further, the switching voltages are found to be almost independent of the thickness of the sample (d), in the range 0.18–0.3 mm. Also, the switching voltages and the number of switching cycles withstood by the samples are found to decrease with temperature. Received: 6 November 2002 / Accepted: 8 November 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. Fax: +91-80/360-0135, E-mail: sasokan@isu.iisc.ernet.in     

Structural and optical characterization of polycrystalline CdSe<Subscript>x</Subscript>Te<Subscript>1-x</Subscript> thin films

Solid solutions of CdSe_xTe_1-x (0.7x1) were synthesized by vacuum fusion of stoichiometric amounts of CdSe and CdTe constituents in a silica tube. X-ray and electron microscope diffractometry techniques revealed that the CdSe_xTe_1-x thin films were polycrystalline with a hexagonal structure. The variation of lattice constants with composition was found to obey Vegards law. The compositional dependence of the optical constants, the refractive index n and the absorption index k, of the films was determined in the spectral range of 400–2000 nm. The dispersion of the refractive index of the films could be described using the Wemple–DiDomenico single oscillator model. Changes of the dispersion parameters were also studied as a function of the mole fraction x. A plot representing ²=f(h) showed that the CdSe_xTe_1-x thin films of different compositions have two direct transitions corresponding to the energy gaps E_g and E_g+. The variation in either E_g or E_g+ with x indicates that this system belongs to the amalgamation type. The variation follows a quadratic dependence and the bowing parameters were found to be 0.4 and 0.5 eV, respectively. PACS 78.20.-e; 81.15.-z     

Structural properties of zinc-blende Ga<Subscript>x</Subscript>In<Subscript>1-x</Subscript>N: ab initio calculations

We present a theoretical study of the structural properties, namely lattice constant, bulk modulus and its pressure derivative of zinc-blende Ga_xIn_1-xN. The calculations are performed using first-principles calculations in the framework of the density-functional-theory within the local density approximation under the virtual crystal approximation. The computed values are in good agreement with the available experimental data. The composition dependence of the studied quantities is examined. Besides, the deviation of the alloy lattice constant from Vegard's law is evaluated.     

The structural,electronic and optical properties of CuGa (Se<Subscript>x</Subscript>S<Subscript>1-x</Subscript>)<Subscript>2</Subscript> compounds from first-principle calculations

The structural, electronic and optical properties of theCuGa (Se _x S_1-x )₂alloy system have been performed systematic within generalized gradient approximation(GGA) of Perdew-Burke-Ernzerhof (PBE) implemented in the Cambridge serial total energypackage (CASTEP) code. We calculate the lattice parameters and axial ratio, which agreewith the experimental values quite well. The anion position parameters uare also predicted using the model of Abrahams and Bernstein and the results seem to betrustworthy as compared to the experimental and theoretical values. The total and partdensity of states are discussed which follow the common rule of the conventionalsemiconductors. The static dielectric tenser and refractive index are summarized comparedwith available experimental and theoretical values. Also the spectra of the dielectricfunctions, refractive index, reflectance, absorption coefficient and real parts ofphotoconductivity are discussed in details.     

Evidence of an intermediate phase in ternary Ge<Subscript>7</Subscript>Se<Subscript>93-x</Subscript>Sb<Subscript>x</Subscript> glasses

The compositional dependence of thermal properties, such as glass transition temperature (T_g), non-reversing enthalpy change (ΔH_NR) and the specific heat capacity change (ΔC_p) of melt quenched Ge₇Se_93-xSb_x (21 ≤ x ≤ 31) glasses, has been studied using alternating differential scanning calorimetry (ADSC) which is analogous to modulated differential scanning calorimetry (MDSC). The glass transition temperature, T_g, which is a measure of global connectivity of the glass, has been found to increase with the addition of Sb. In addition, a change in slope has been observed in the composition dependence of T_g at an average coordination 〈r〉 = 2.40. The experimentally observed compositional variation of glass transition temperature, has been compared with the theoretical predictions from the stochastic agglomeration theory (SAT) and has been found to be consistent. Further, a narrow thermally reversing window is seen in the compositional variation of the relaxation enthalpy (ΔH_NR), which is centered around 〈r〉 = 2.40. The change in specific heat capacity (ΔC_p) at T_g is also found to exhibit a distinct minima at 〈r〉 = 2.40, suggesting that the structural rearrangements for the liquid in the glass transition region are minimized around 〈r〉 = 2.4.     

Influence of different precursor surface layers on Cu(In<Subscript>1-x</Subscript>Ga<Subscript>x</Subscript>)Se<Subscript>2</Subscript> thin film solar cells

The properties of Cu(In_1-xGa_x)Se₂ (CIGS) thin films obtained by selenization of the precursors with different surface layers have been studied, and photovoltaic devices based on the absorbers were measured and analyzed. The devices constructed by the absorbers obtained by selenization of the precursors with CuGa-rich surface layers are improved, compared with those with In-rich surface layers. Through XRD, SEM, SIMS, illuminated J–V, QE and Raman spectra measurements, it was found that the increased Ga contents within the surface region of films and the graded Ga distribution can be realized in the selenized thin films fabricated by the precursors with the CuGa-rich surface layer. Consequently, the performances of the photovoltaic devices based on these thin films are further improved. PACS 61.72.Ss; 87.64.Jt; 68.60.Bs; 81.15.Cd; 84.60.Jt     

Electronic structure of paramagnetic In<Subscript>1-x</Subscript>Mn<Subscript>x</Subscript> As nanowires

The electronic structure, spin splitting energies, and g factors of paramagnetic In_1-xMn_xAs nanowires under magnetic and electric fields are investigated theoretically including the sp-d exchange interaction between the carriers and the magnetic ion. We find that the effective g factor changes dramatically with the magnetic field. The spin splitting due to the sp-d exchange interaction counteracts the Zeeman spin splitting. The effective g factor can be tuned to zero by the external magnetic field. There is also spin splitting under an electric field due to the Rashba spin-orbit coupling which is a relativistic effect. The spin-degenerated bands split at nonzero k_z (k_z is the wave vector in the wire direction), and the spin-splitting bands cross at k_z = 0, whose k_z-positive part and negative part are symmetrical. A proper magnetic field makes the k_z-positive part and negative part of the bands asymmetrical, and the bands cross at nonzero k_z. In the absence of magnetic field, the electron Rashba coefficient increases almost linearly with the electric field, while the hole Rashba coefficient increases at first and then decreases as the electric field increases. The hole Rashba coefficient can be tuned to zero by the electric field.     

Electronic and structural properties of zincblende Al<Subscript>x</Subscript>Ga<Subscript>1-x</Subscript>N

Numerical calculations based on first-principles are applied to study the electronic and structural properties of zincblende Al_xGa_1-xN. The results show that the lattice constant has a very small deviation from the linear Vegard’s law. The direct and indirect bowing parameters of 0.295±0.034 eV and -0.125±0.060 eV are obtained, respectively, and there is a direct-indirect crossover near x=0.692. Besides, the bulk moduli and their pressure derivatives are monotonically increased with an increase of the aluminum composition x. The deviation parameter of the bulk modulus of -5.32±1.60 GPa is obtained. PACS 71.15.-m; 71.15.Nc; 71.55.Eq; 71.20.Nr; 42.70.Qs     

Scaling and self-similarity in Pb<Subscript>1-x</Subscript>Fe<Subscript>x</Subscript>S nanoparticle films

This paper addresses the issues of scaling and self-similarity in typical nanoparticle films. The role played by microscopic processes contributing to growth on these issues is probed. While we perform this investigation for a specific system viz., Pb_1-xFe_xS nanoparticle films for clarity of the procedures, the analysis is general and can be applied to a variety of systems obtained using different deposition techniques.     

Ab initio study on elastic and thermodynamical properties of Ti<Subscript>1-x</Subscript>Zr<Subscript>x</Subscript>C

Elastic and Thermodynamical properties of Ti_1-xZr_xC have been investigated using LAPW + lo within the density-functional theory with the generalized gradient approximation. We have studied the stability of the alloy Ti_1-xZr_xC as a function of Zr composition in rocksalt (B1) structure by calculating the elastic constants C₁₁, C₁₂ and C₄₄ using the tetragonal and trigonal distortions. Mechanical properties such as Poisson ratio, bulk, shear and Young’s modulii of Ti_1-xZr_xC are calculated. The Debye temperature and hardness are also computed for the first time to our knowledge for Ti_1-xZr_xC in various compositions.     

Non-critical phase-matched second harmonic generation in Gd<Subscript>x</Subscript>Y<Subscript>1-x</Subscript>COB

We have characterized non-critical phase-matching (NCPM) for both Type I and Type II second harmonic generation (SHG) in y-cut Gd_xY_1-xCOB using a nanosecond optical parametric oscillator (OPO). The variation of the NCPM wavelength with temperature was investigated for different values of the compositional parameter x. Efficient SHG of 1064 nm was achieved by choosing the suitable compositional parameter x=0.28 and by tuning the temperature of the crystal to 52 °C. Using a 25-mm-long Gd_0.28Y_0.72COB crystal, conversion efficiencies of 41 and 43% were obtained respectively from a mode-locked Nd:YAG and a Q-switched Nd:YAG laser. PACS 42.25.Lc; 42.65.Ky; 42.70.Mp; 42.79.Nv     

Synthesis and characterization of Zn<Subscript>1-x</Subscript>Mn<Subscript>x</Subscript>S nanocrystalline films prepared on glass substrates

Nanocrystalline Zn_1-xMn_xS films (x=0.04, 0.08 and 0.12) were deposited on glass substrates at 400 K using a simple resistive thermal evaporation technique. All the deposited films were characterized by chemical, structural, morphological, optical and magnetic properties. Scanning electron microscopy and atomic force microscopy studies showed that all the films investigated were in nanocrystalline form with the grain size lying in the range 10–20 nm. All the films exhibited cubic structure and the lattice parameters increase linearly with composition. The absorption edge shifted from the higher-wavelength region to lower wavelengths with increase in Mn concentration. The magnetization increased sharply with increase of the Mn content up to x=0.08 and then decreased with further increase of the Mn content. Particularly, Zn_0.92Mn_0.08S concentration samples show a weak ferromagnetic nature, which might be the optimum concentration for optoelectronic and spintronic device applications. PACS 75.50.Pp; 78.66.Hf; 75.70.Ak; 75.75.+a     

Photoacoustic spectra of Zn<Subscript>1-x</Subscript>Be<Subscript>x</Subscript>Te near the energy gap

The results of experimental studies of optical and structural properties in bulk crystals of Zn_1-xBe_xTe (x = 0.02, 0.06 and 0.12) were presented. The amplitude and phase photoacoustic (PA) spectra were measured and analyzed in dependence on the wavelength of the excitation optical beam, at different frequencies of modulation, using the PA microphone (PAmic) and PA piezoelectric (PApze) spectroscopy methods. The differences in PA spectra of as grown and annealed in zinc vapor samples were observed.     

Photoluminescence and persistent photoconductivity of Al<Subscript>x</Subscript>Ga<Subscript>1-x</Subscript>N/GaN heterostructures

We have investigated the optical properties of Al_xGa_1-xN/GaN heterostructures (x=0.08, 0.15, 0.33) grown by metal organic chemical vapor deposition on sapphire using photoluminescence (PL) and persistent photoconductivity (PPC) measurements. For the Al_xGa_1-xN/GaN heterostructures (HS) containing high Al composition, we observed an anomalous temperature-dependent photoluminescence and persistent photoconductivity effects. These results show a strong dependence of the physical properties of Al_xGa_1-xN/GaN HS on the Al content and layer thickness. The anomalous temperature-dependent PL is usually attributed to the presence of carrier localization states. These phenomena are explained based on the alloy compositional fluctuations in the Al_xGa_1-xN/GaN HS. From the PPC measurements, the photocurrent (PC) quenching was observed for Al_xGa_1-xN/GaN HS and it is explained by the metastable states formed in the underlying GaN layer. Also, the mechanisms behind the PC quenching and PPC phenomena are explained in detail. PACS 72.20.Jv; 72.40.+w; 78.55.Cr     

Structural and thermoelectric properties in (Sb<Subscript>1-x</Subscript>Bi<Subscript>x</Subscript>)<Subscript>2</Subscript>Te<Subscript>3</Subscript> thin films

We have investigated the structural and thermoelectric properties of (Sb_1-xBi_x)₂Te₃ thin films on CdTe(111)B. Analysis of X-ray diffraction patterns (–2 scans and rocking curves) of the films shows that they are of high quality and that they are well aligned with their (00.1) axis normal to the substrates. Measurements of the temperature-dependent thermoelectric power, resistivity, and Hall coefficient of the films were performed with respect to the binary composition, x. For the samples in the range 0.2<x<0.3, the room-temperature thermopower values were in the range 159–184 V/K, the room-temperature carrier concentrations were 3.93–5.13×10¹⁹ cm^-3, and the room-temperature mobilities were 24.6–64.0 cm²V^-1s^-1. PACS 72.20.Pa; 72.80.Jc; 73.6l.Le     

First-principles investigation of electronic and optical properties in wurtzite Zn<Subscript>1-x</Subscript>Mg<Subscript>x</Subscript>O

A first-principles study has been performed to evaluate the electronic and optical properties of wurtzite Zn_1-xMg_xO. Substitutional doping is considered with Mg concentrations of x = 0, 0.0625, 0.125, 0.1875 and 0.25, respectively. Mg incorporation can induce band gap widening due to the decrease of Zn 4s states. The imaginary part of the dielectric function shows that the optical transition from band edge emission decreases slightly with increasing Mg contents. The optical band gap also increases from 3.2 to 3.7 eV with increasing Mg contents from 0.0625 to 0.25. The calculated results suggest that relatively high Mg concentration is necessary for effective band gap engineering of wurtzite Zn_1-xMg_xO.     

Rashba effect in Ga<Subscript>x</Subscript>In<Subscript>1-x</Subscript>As/InP quantum wire structures

An overview is given on the Rashba effect in Ga_xIn_1-xAs/InP quantum wires. First, the effect of Rashba spin–orbit coupling on the energy level spectrum of quantum wires with different shapes of the confining potential is theoretically investigated. The wave functions as well as the spin densities in the quantum wire are analyzed for different magnetic fields. It is found that, owing to the additional geometrical confinement, a modification of the characteristic beating pattern in the magnetoresistance can be expected. The theoretical findings are compared to measurements on two different types of wires: First, single wires and, second, sets of parallel wires. A characteristic beating pattern in the Shubnikov–de Haas oscillations is observed for wires with an effective width down to approximately 400 nm. The beating pattern is significantly better resolved for the samples with sets of parallel wires, owing to the effective suppression of conductance fluctuations. A comparison with theoretical simulations confirms that the strength of the Rashba effect is basically not affected by the geometrical confinement of the wires. However, for wires with a very small effective width the strong carrier confinement leads to a suppression of the characteristic beating pattern in the Shubnikov–de Haas oscillations. PACS 71.70.Ej; 73.63.-b; 71.70.Di     

Annealing Effects on the Structural and Optical Properties of Thermally Deposited Tin Antimony Sulfide Thin Films

We report the deposition and characterization of tin antimony sulfide thin films on a soda glass substrate by a thermal evaporation technique. The thin films were annealed in argon gas at 150, 175, and 300 °C inside glass ampoules. The structural and optical properties of the deposited and annealed films are investigated. X-ray diffraction (XRD) patterns show that the films are polycrystalline in structure. Photoconductivity plot revealed good response in the NIR and visible regions, while the films show no transmittance below 700 nm. The absorption coefficient was of the order of 10⁶ cm^?1. Optical band gaps were also evaluated and a decrease in band gap was observed due to annealing. Hot point probe technique was employed for type of conductivity.     

Elasticity and polarization of Ga<Subscript>x</Subscript>Al<Subscript>1-x</Subscript>N alloys subjected to uniaxial and biaxial compression

Elasticity and polarization of Ga_xAl_1-xN alloys subjected to uniaxial and homogeneous biaxial compression are calculated using first-principles methods. The uniaxial compression along the c-axis reduces Young’s modulus along the c-axis, and enhances bulk modulus and total polarization, whereas the biaxial compression in the plane perpendicular to the c-axis enhances bulk and Young’s moduli. It is also found that when the in-plane biaxial compression is applied by constraining the a-axis lattice constant to that of AlN, the bulk and Young’s moduli dramatically increase with increasing Ga concentration, and the total polarization could be suppressed, even annihilated, and finally enhanced by controlling Ga concentration.     

Electron mobility for a model Al<Subscript>x</Subscript> Ga<Subscript>1-x</Subscript> As/GaAs heterojunction under pressure

A variational method and a memory function approach are adopted to investigate the electron mobility parallel to the interface for a model Al_xGa_1-xAs/GaAs heterojunction and its pressure effect by considering optical phonon modes (including both of the bulk longitudinal optical (LO) in the channel side and interface optical (IO) phonons). The influence of a realistic interface heterojunction potential with a finite barrier and conduction band bending are taken into account. The properties of electron mobility versus Al concentration, electronic density and pressure are given and discussed, respectively. The results show that the electron mobility increases with Al concentration and electronic density, whereas decreases with pressure from 0 to 40 kbar obviously. The Al concentration dependent and the electron density dependent contributions to the electron mobility from the scattering of IO phonons under pressure becomes more obvious. The variation of electron mobility with the Al concentration and electron density are dominated by the properties of IO and LO phonons, respectively. The effect of IO phonon modes can not be neglected especially for higher pressure and electronic density.