Effect of hydroquinone on the electrical properties of dodecylbenzene sulfonic acid doped polypyrrole/aluminum Schottky junction

Electrical properties of Schottky barrier diode fabricated using Aluminum for Schottky contact and indium tin oxide for ohmic contact and containing polypyrrole doped with dodecylbenzene sulfonic acid in the presence and in the absence of a plasticizing agent hydroquinone were studied. Various parameters, e.g. saturation current, ideality factor, built in voltage; carrier concentration and barrier height have been calculated and found to be affected by the presence of hydroquinone in the doped polymer. The electrical behavior of the systems was found to be in a good agreement with the thermionic emission model for the Schottky barrier devices. The interaction of the doped polypyrrole with hydroquinone was explained in terms of change in the barrier height and in the carrier concentration of the diodes.     

Fabrication and electrical characterization of nickel/p-Si Schottky diode at low temperature

In this study the current–voltage and capacitance–voltage characteristics of metal semiconductor Ni/p-Si(100) based Schottky diode on p- type silicon measured over a wide temperature range (60–300 K) have been studied on the basis of thermionic emission diffusion mechanism and the assumption of a Gaussian distribution of barrier heights. The parameters ideality factor, barrier height and series resistance are determined from the forward bias current–voltage characteristics. The barrier height for Ni/p-Si(100) Schottky diode found to vary between 0.513 eV and 0.205 eV, and the ideality factor between 2.34 and 8.88 on decreasing temperature 300–60 K. A plot involving the use of ϕ_b versus 1/T data is used to gather evidence for the occurrence of a Gaussian distribution of barrier height and obtain the value of standard deviation. The observed temperature dependences of barrier height and ideality factor and non-linear activation energy plot are attributed to the Gaussian distribution of barrier heights at the metal-semiconductor contact. The barrier height of Ni/p-Si(100) Schottky diode was also measured over wide temperature from the capacitance-voltage study.     

Alkyl Monolayer Passivated Metal–Semiconductor Diodes: 2: Comparison with Native Silicon Oxide

To understand the electrical properties at passivated metal–semiconductor interfaces, two types of mercury–insulator–silicon (n‐type) junctions, Hg|C₁₀H₂₁? Si and Hg|SiO₂? Si, were fabricated and their current–voltage and capacitance–voltage characteristics compared. Both of them exhibited near‐ideal rectifying characteristics with an excellent saturation current at reverse bias, which is in contrast to the previously reported ohmic behavior of an unmodified mercury–silicon junction. The experimental results also indicated that the n‐decyl monolayer passivated junction possesses a higher effective barrier height, a lower ideality factor (that is, closer to unity), and better reproducibility than that of native silicon oxide. In addition, the dopant density and build‐in potential, extracted from capacitance–voltage measurements of these passivated mercury–silicon junctions, revealed that alkyl monolayer derivatization does not alter the intrinsic properties of the silicon substrate. The calculated surface state density at the alkyl monolayer|silicon interface is lower than that of the silicon oxide|silicon interface. The present study increases the possibility of using advanced organic materials as ultrathin insulator layers for miniaturized, silicon‐based microelectronic devices.     

Fabrication and conduction mechanism evaluation of polyfluorene polymeric Schottky diode

A thin film of polyflourene polymer was sandwiched between a conductive polymer deposited on silver nanowire and metal electrode to form a multilayer polymer‐based diode device. The electrical properties of fabricated polymeric diode have been studied by current–voltage method. The current–voltage characteristics of the fabricated device exhibited non‐ideal, asymmetrical, and rectifying behavior. Ohmic current conduction mechanism was observed in the device at low voltage. At higher voltage values, the space‐charge‐limited current conduction mechanism was found to be dominated. The values of the Schottky barrier height, ideality factor, and saturation current density were extracted according to the standard thermionic emission model and discussed. The barrier height and ideality factor were calculated as 0.72 eV and 2.53, respectively. Copyright © 2015 John Wiley & Sons, Ltd.     

Electrical-optical properties of nanofiber ZnO film grown by sol gel method and fabrication of ZnO/p-Si heterojunction

Electrical and optical properties of the ZnO film prepared by sol-gel dip coating were investigated and ZnO film was deposited onto p-type silicon to obtain Ag/ZnO/p-Si heterojunction diode. Two dimensional atomic force microscopy images indicate that the ZnO film is formed from the fibers consisted from nanoparticles with grain size of 250-350 nm. The electrical conductivity mechanism of the ZnO film was varied from extrinsic to intrinsic conductivity. The calculated optical band gap of the ZnO film was found to be 3.22 eV. The Ag/ZnO/p-Si diode exhibit a non-linear behavior with ideality factor of n = 4.17 and barrier height of ?_B = 0.79 eV. The electrical properties of the Ag/ZnO/p-Si diode were investigated by current-voltage, capacitance-voltage-frequency and conductance-voltage-frequency measurements.     

Fabrication and electrical characterization of transparent NiO/ZnO p–n junction by the sol–gel spin coating method

Sol–gel spin technique was used to fabricate transparent p–n junction between NiO and ZnO semiconductors. Atomic force microscopy studies indicated that ZnO film had a fibrous structure, while NiO film showed very smooth surface morphology. The optical transmittance of these films was about 75 %. The optical band gaps of ZnO and NiO films were obtained to be 3.25 and 3.89 eV, respectively. The current–voltage characteristics of NiO/ZnO junction showed a good rectifying behavior. The junction parameters such as ideality factor and barrier height were calculated using thermionic emission model. The barrier height and ideality factor values of the diode were obtained to be 0.48 and 2.91 eV, respectively. The variation of photocurrent with wavelength indicates that this device had high efficiency in wavelength range of 450–475 nm.     

Effect of illumination and frequency dependent series resistance and interface state densities on the electrical properties of DNA-CTMA/p-GaN bio-hybrid Schottky photodiode

A deoxyribonucleic acid-cetyltrimethylammonium chloride (DNA-CTMA) biopolymer-based inorganic p-type GaN bio-hybrid Schottky photodiode was fabricated and its electrical characteristics were studied. The Al/Cr/DNA-CTMA/p-GaN bio-hybrid photodiode parameters were investigated using current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G/ω-V-f) measurements. The calculated ideality factor and barrier height of the diode were found to be 1.8 and 0.82 eV, respectively. The electrical and photo-conduction properties of the diode were examined using dark I-V and steady-state photoconductivity techniques. The C-V-f and G/ω-V-f measurements showed that the capacitance and conductance of the diode depends on the bias voltage and frequency, respectively. On the other hand, a decrease in capacitance and increase in conductance with increasing frequency at room temperature were demonstrated based on the interface state density. In addition, the interface state density decreased exponentially with increasing frequency. It is also noted that series resistance decreased with increasing frequency. The results showed that the biopolymer-based Al/Cr/DNA-CTMA/p-GaN bio-hybrid photodiode can be used as a photosensor in optical applications and the development of high-performance organic-inorganic-based p-Schottky diodes that are environmentally safe.     

Photoelectrochemical Behaviour of Hydrogenated Amorphous Silicon(a-Si:H) Films

Photoelectrochemical techniques have been employed in the investigation of p-type, n-type and intrinsic hydrogenated amorphous silicon(a-Si:H) films. The results show that the photocurrent response of the films strongly depends on the doped type electrolyte solution and the redox potential of the redox couples. Intrinsic a-Si:H film yields a stable photocurrent much higher than the p- and n-type ones. Based on the measurements, the energy levels and flatband potential of the intrinsic a-Si:H film are given, and the mechanisms of charge transfer in photoelectrochemical cell (PEC) are discussed.     

Suppression of electron-transfer characteristics of ferrocene by OTS monolayer on a silicon/electrolyte interface

The passivating behavior of self-assembled monolayers (SAMs) of octadecyltrichlorosilane (OTS) on an n-type Si(100) electrode with and without a redox species like ferrocene in a polar non-aqueous medium has been investigated using techniques like contact angle measurements, Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS) to understand the role of the monolayer. The electron-transfer behavior of ferrocene is found to be drastically affected by the presence of monolayer and the reasons for these are analyzed as a function of the change in resistance, dielectric thickness and coverage of the monolayer. Electrochemical impedance analysis in the presence of ferrocene gives the monolayer coverage as 0.998 and the apparent rate constant calculated from this gives 4.85 x 10(-12) cm s(-1) in comparison with 4.4 x 10(-8) cm s(-1) for a similar electrode without any monolayer. A positive shift of 200 mV in the flat-band potential after monolayer formation also suggests the covalent coupling of the silane monolayer offering a protective barrier.     

Current–voltage and capacitance–voltage characteristics of the ITO/polyaniline doped boron trifloride/Al Schottky diode

The electrical characteristics of the ITO/polyaniline (PANI) doped boron trifloride (BF₃)/Al Schottky diode have been investigated by current–voltage (I–V) and capacitance–voltage (C–V) methods. The diode indicates a rectification behavior with the ideality factor of 4.78. An ideality factor higher than unity can result from the interface state and electronic properties of the PANI doped BF₃ organic semiconductor. The barrier height of the diode was determined from both I–V and C–V characteristics. The barrier height obtained from the C–V measurements is higher than that obtained from the I–V measurements. At higher forward bias voltages, the space charge‐limited current is the dominant transport mechanism, whereas at reverse bias voltages, the current flow in the ITO/PANIBF₃/Al diode is controlled by Schottky emission mechanism. Copyright © 2008 John Wiley & Sons, Ltd.     

High sensitivity Schottky junction diode based on monolithically grown aligned polypyrrole nanofibers: Broad range detection of m-dihydroxybenzene

Aligned p-type polypyrrole (PPy) nanofibers (NFs) thin film was grown on n-type silicon (100) substrate by an electrochemical technique to fabricate Schottky junction diode for the efficient detection of m-dihydroxybenzene chemical. The highly dense and well aligned PPy NFs with the average diameter (∼150–200 nm) were grown on n-type Si substrate. The formation of aligned PPy NFs was confirmed by elucidating the structural, compositional and the optical properties. The electrochemical behavior of the fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode was evaluated by cyclovoltametry (CV) and current (I)-voltage (V) measurements with the variation of m-dihydroxybenzene concentration in the phosphate buffer solution (PBS). The fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode exhibited the rectifying behavior of I–V curve with the addition of m-dihydroxybenzene chemical, while a weak rectifying I–V behavior was observed without m-dihydroxybenzene chemical. This non-linear I–V behavior suggested the formation of Schottky barrier at the interface of Pt layer and p-aligned PPy NFs/n-silicon thin film layer. By analyzing the I–V characteristics, the fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode displayed reasonably high sensitivity ∼23.67 μAmM⁻¹cm⁻², good detection limit of ∼1.51 mM with correlation coefficient (R) of ∼0.9966 and short response time (10 s).     

Switching in organic devices caused by nanoscale Schottky barrier patches

We have identified a possible electronic origin of metal filaments, invoked to explain the switching behavior of organic devices. Interfaces of two representative organics polyparaphenylene (PPP) and poly(2-methoxy-5-2-ethyl-hexyloxy-1,4-phenylenevinylene) with Ag are investigated using ballistic emission microscopy. Nanometer scale spatial nonuniformity of carrier injection is observed in ballistic electron emission microscopy images of both interfaces. The measured Schottky barrier (SB) appears to be consistent with metal states tailing into the gap of the PPP. We find that the SB values exhibit a distribution, even for the diodes with low ideality factors. The implications of this distribution on the measured physical properties of the diode are discussed, in light of work on devices of similar geometry, published in the literature. We also demonstrate that patches of low SB are likely to nucleate current filaments which can cause local ionization and are reported to be responsible for the switching behavior observed in metal-organic, metal-CuS and Ag-AgSe structures.     

Controlling the electrical characteristics of Au/n‐Si structure with and without (biphenyl‐CoPc) and (OHSubs‐ZnPc) interfacial layers at room temperature

In order to interpret well whether or not the organic or polymer interfacial layer is effective on performance of the conventional Au/n‐Si (metal semiconductor [MS]) type Schottky barrier diodes (SBDs), in respect to ideality factor (n ), leakage current, rectifying rate (RR ), series and shunt resistances (R_s , R_sh ) and surface states (N_ss ) at room temperature, both Au/biphenyl‐CoPc/n‐Si (MPS₁) and Au/OHSubs‐ZnPc/n‐Si (MPS₂) type SBDs were fabricated. The electrical characteristics of these devices have been investigated and compared by using forward and reverse bias current–voltage (I–V ) characteristics in the voltage range of (?4 V)–(4 V) for with and without (biphenyl‐CoPc) and (OHSubs‐ZnPc) interfacial layers at room temperature. The main electrical parameters of these diodes such as reverse saturation current (I₀ ), ideality factor (n ), zero‐bias barrier height (Φ_B0 ), RR , R_s and R_sh were found as 1.14 × 10^?5 A, 5.8, 0.6 eV, 362, 44 Ω and 15.9 kΩ for reference sample (MS), 7.05 × 10^?10 A, 3.8, 0.84 eV, 2360, 115 Ω and 270 kΩ for MPS1 and 2.16 × 10^?7 A, 4.8, 0.7 eV, 3903, 62 Ω and 242 kΩ for MPS₂, respectively. It is clear that all of these parameters considerably change by using an organic interfacial layer. The energy density distribution profile of N_ss was found for each sample by taking into account the voltage dependence of effective barrier height (Φ_e ) and ideality factor, and they were compared. Experimental results confirmed that the use of biphenyl‐CoPc and OHSubs‐ZnPc interfacial layer has led to an important increase in the performance of the conventional of MS type SBD. Copyright © 2015 John Wiley & Sons, Ltd.     

Thiol-terminated monolayers on oxide-free Si: assembly of semiconductor-alkyl-S-metal junctions

Self-assembled monolayers formed by thermal hydrosilylation of a trifluoroacetyl-protected alkenylthiol on Si-H surfaces, followed by removal of the protecting groups, yield essentially oxide-free monolayers suitable for the formation of Si-C11H22-S-Hg and Si-C11H22-S-Au junctions in which the alkyl chains are chemically bound to the silicon surface (via Si-C bonds) and the metal electrode (via Hg-S or Au-S bonds). Two barriers to charge transport are present in the system: at low bias the current is temperature activated and hence limited by thermionic emission over the Schottky barrier in the silicon, whereas as at high bias transport is limited by tunneling through the organic monolayer. The thiol-terminated monolayer on oxide-free silicon provides a well-characterized system allowing a careful study of the importance of the interfacial bond to the metal electrode for current transport through saturated molecules.     

Electrical and photoconducting properties of nanorod in based spinel compound/p-Si photodiode by sol–gel spin coating technique

A new Schottky diode (InFe₂O₄/p-Si/Al) was fabricated using the sol–gel spin coating technique. The current–voltage (I–V) characteristics of the Schottky diode were investigated under various illumination intensities. The value of ideality factor (n) and zero-bias barrier height (Φ_B0) for all illuminations was determined by using the forward-bias I–V measurements, and were found to be about 4.20 and 0.72 eV, respectively. The reverse current of the diode in the reverse bias increases with the increasing illumination intensities. Also, the photocurrent under illumination is higher than the dark current. In addition, the capacitance–voltage (C–V) and conductance–voltage (G–V) measurements of the diode were studied in the frequency range of 10 kHz–1 MHz. The measured values of the C decrease with the increasing frequency. The decrease in capacitance was explained on the basis of interface states. To obtain the real C and G of the diode, the measured values of C and G were corrected to eliminate the effect of series resistance. The obtained results suggest that the diode can be used as a photodiode in optoelectronic applications.     

Polyaniline/gallium doped ZnO heterostructure device via plasma enhanced polymerization technique: Preparation, characterization and electrical properties

The ZnO and gallium-doped ZnO nanoparticles (NPs) were synthesized by simple chemical method and used for the fabrication of p-polyaniline/n-ZnO heterostructures devices in which polyaniline was deposited by plasma-enhanced polymerization. The increment in the crystallite sizes of gallium doped ZnO nanoparticles from ~21.85 nm to ~32.39 nm indicated the incorporation of gallium ion into the ZnO nanoparticles. The surface and structural studies investigated the participation of protonated N atom for the bond formation between polyaniline and gallium-ZnO through partial hydrogen bonding. Compared to a Pt/polyaniline/ZnO diode, the fabricated Pt/polyaniline/gallium-ZnO heterostructure diode exhibited good rectifying behavior with Current–Voltage characteristics of improved saturation current, low ideality factor, and a high barrier height might due to the efficient charge conduction via gallium ion at the junction of the polyaniline/gallium doped-ZnO interface.

Effects of FeCl3 as oxidizing agent on the conduction mechanisms in polypyrrole (PPy)/pc–ZnO hybrid heterojunctions grown by oxidative chemical vapor deposition

P‐type polypyrrole (PPy) films are deposited on glass and on n‐type polycrystalline ZnO (pc–ZnO) substrates by oxidative chemical vapor deposition under three different amounts of FeCl₃ used as oxidizing agents to form hybrid heterojunctions. Their microstructure, morphology, and electrical characteristics are studied. Particularly, current–voltage characteristics of the PPy/pc–ZnO heterojunctions are analyzed by defining an electrical equivalent circuit. The extracted parameters, together with the estimated heterojunction barrier height and the HOMO energy level of the PPy, indicate that a thermionic emission of holes at the heterojunction determines the saturation current of the diode at low voltage. For larger FeCl₃ amounts, the diode ideality factor increases indicating an increment of recombination by tunneling of charge carriers occurring at the heterojunction. This is attributed to a narrowing of the space charge region due to an increment of the number of charge carriers with a growing amount of FeCl₃. At high voltages, the PPy thickness influences the ohmic and space–charge limited current mechanisms at the bulk region. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 1537–1544     

Formation of uniform ferrocenyl-terminated monolayer covalently bonded to Si using reaction of hydrogen-terminated Si(111) surface with vinylferrocene/n-decane solution by visible-light excitation

Electrochemically active self-assembled monolayers (SAM) have been successfully fabricated with atomic-scale uniformity on a silicon (Si)(111) surface by immobilizing vinylferrocene (VFC) molecules through Si-C covalent bonds. The reaction of VFC with the hydrogen-terminated Si (H-Si)(111) surface was photochemically promoted by irradiation of visible light on a H-Si(111) substrate immersed in n-decane solution of VFC. We found that aggregation and polymerization of VFC was avoided when n-decane was used as a solvent. Voltammetric quantification revealed that the surface density of ferrocenyl groups was 1.4×10(-10) mol cm(-2), i.e., 11% in substitution rate of Si-H bond. VFC-SAMs were then formed by the optimized preparation method on n-type and p-type Si wafers. VFC-SAM on n-type Si showed positive photo-responsivity, while VFC-SAM on p-type Si showed negative photo-responsivity.     

Controllable n-type doping in WSe2 monolayer via construction of anion vacancies

The successful applications of two-dimensional (2D) transition metal dichalcogenides highly rely on rational regulation of their electronic properties. The nondestructive and controllable doping strategy is of great importance to implement 2D materials in electronic devices. Herein, we propose a straightforward and effective method to realize controllable n-type doping in WSe₂ monolayer by electron beam irradiation. Electrical measurements and photoluminescence (PL) spectra verify the strong n-doping in electron beam-treated WSe₂ monolayers. The n-type doping arises from the generation of Se vacancies and the doping degree is precisely controlled by irradiation fluences. Due to the n-doping-induced narrowing of the Schottky barrier, the current of back-gated monolayer WSe₂ is enhanced by an order of magnitude and a ∼8× increase in the electron filed-effect mobility is observed. Remarkably, it is a moderate method without significant reduction in electrical performance and severe damage to lattice structures even under ultra-high doses of irradiation.