Electroless copper plating on 3-mercaptopropyltriethoxysilane modified PET fabric challenged by ultrasonic washing

Electroless deposition of Cu on poly(ethylene terephthalate) (PET) fabric modified with 3-mercaptopropyltriethoxysilane was investigated. Morphology, composition, structure, thermal decomposing behavior of copper coating PET fabric after ultrasonic washing in water for 1 h were characterized by scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray photoelectron spectroscopy (XPS), Raman spectrometer, X-ray diffraction (XRD), and thermogravimetric analysis (TG), respectively. Copper plating on modified fabric has good adherence stability and high electric conductivity before and after ultrasonic washing, while copper coating fabric without modification is easily destroyed during the washing process, which leads to the textile changing from conductor to dielectric. As the copper weight on the treated fabric is 28 g/m², the shielding effectiveness (SE) is more than 54 dB at frequency ranging from 0.01 MHz to 18 GHz.     

Electroless plating of nickel–phosphorous on surface-modified poly(ethylene terephthalate) films

Chemical surface preparation for Ni–P electroless metallization of poly(ethylene terephthalate) (PET) films without using Chromium-based chemicals, was studied. The applicability of this method was verified by a subsequent metallization process. Thermal analysis was conducted to observe the main thermal transitions and stability of the polymer and metallized films. Contact angle analysis was performed to assess the surface hydrophilicity so as to optimize the substrate preparation process. X-ray diffraction, EDAX and SEM analysis were used to understand the composition and morphology of the polymeric substrate and Ni–P coat growing process. Adherence strength, contact sheet resistivity and optical diffuse reflection were measured on the metallized films. The time of chemical etching affects the polymer surface hydrophilicity, polymer/metal adherence strength, surface resistance and optical diffuse reflection, while Ni coating morphology is controlled by the pH of the electroless bath. High wettability of the polymer surface, adherence strength of 800 N cm⁻², high optical diffuse reflection and low surface resistivity of the Ni coating, were found for films etched for 60 min. Metallizations performed at pH 7.5 produce Ni–P coatings with 12.0 wt.% phosphorous content, which were amorphous and flexible. The contact sheet resistivity of the plated films is sensitive to roughness variations of the substrate. The method proposed in this work allows the production of metallized films appropriate for the fabrication of flexible circuits.     

Comparative study of electroless copper deposition based on the seed layers of Pd, PtPd and AuPd

The article reports on electroless deposition of copper films onto p-silicon (1 0 0) using different seed (co-seed) layers of Pd, PtPd and AuPd. The dependence of the compositions and morphologies of different seed layers on resultant Cu films were comparatively studied in detail by atomic force microscopy (AFM), field emission scanning electron microscope (FE-SEM) and X-ray photoelectron spectroscopy (XPS). The activities of electroless copper deposition on the p-silicon (1 0 0) with different seed (co-seed) layers were evaluated by polarization curve. It is concluded that the bimetallic AuPd seed displayed the highest catalytic activity for electroless copper deposition, and followed by the order of PtPd > Pd.     

Investigation of the optical anisotropy of PET and PEN films by VIS-FUV to IR spectroscopic ellipsometry

In the last years, a significant amount of research is being performed in the field of polymer research for novel applications, such as flexible electronic devices, photovoltaic cells, high performance optics, data storage, etc. Toward this direction, in this work, the optical anisotropy of biaxially stretched poly(ethylene terephthalate) (PET) and poly(ethylene naphthalate) (PEN) films has been extensively investigated. The optical properties of the films have been studied in terms of their optical, electronic and vibrational response, by Fourier transform IR spectroscopic ellipsometry (FTIRSE) (900-3500 cm⁻¹) and Vis-fUV variable angle SE (1.5-6.5 eV) techniques. The films optical anisotropy is the result of the stretching procedure during their fabrication, which results to the structural rearrangement of the macromolecular chains parallel to the stretching direction and to a higher structural symmetry. During the SE spectra analysis, the films have been approximated as uniaxial materials with their optic axis parallel to the sample/ambient interface leading to the accurate determination of the principal components ?_||(ω) and ?_⊥(ω) of the dielectric function ?(ω). The detailed study of the electronic transitions has been performed in the Vis-fUV region, where the characteristic features corresponding to the n → π* electronic transitions of the carbonyl -CO group and the ¹A_1g → ¹B_1u transition due to the π → π* excitation of the π-electron structures have been identified and analysed. Furthermore, the FTIRSE spectra allowed the accurate identification and assignment of the features of ?(ω) to the vibrational modes of the various bonding structures characteristic of the PET and PEN macromolecular chains.     

变温FTIR光谱法研究PET/纳米CaCO_3复合材料的固态转变

采用变温FTIR光谱法研究了原料PET和PET/nano-CaCO3(MPET)复合材料体系在40~250℃之间逐渐升温过程中,PET基体的固态转变。通过研究PET内标谱带1 410 cm-1与结晶相关谱带1 342cm-1吸光度之比值随温度变化关系曲线,结合其在同样条件下的差热扫描(DSC)曲线,分析了纳米CaCO3粒子的加入对PET固态转变和结晶相关谱带的影响,表明纳米CaCO3粒子的加入显著改善了PET的结晶和熔融行为。     

Controllable wettability of poly(ethylene terephthlate) film modified by oxygen combined inductively and capacitively coupled radio-frequency plasma

Poly(ethylene terephthalate) (PET) film was modified by using oxygen combined inductively coupled radio-frequency plasma (ICP) and capacitively coupled radio-frequency plasma (CCP) at the radio-frequency (RF) power of 200 W and 100 W, respectively, for a treatment time up to 300 s. The RF plasma modification under the combined ICP and CCP mode with the controllable oxygen plasma density and oxygen ion-flux energy significantly improved the wettability of PET film, due to the creation of the polar functional groups containing oxygen, such as C-O and O-CO, and the increase of the surface roughness. At a low surface roughness, the polar functional groups on the PET film affected both the advancing contact angles and receding contact angles. When the surface roughness increased over a threshold, the advancing contact angles mainly depended on the polar functional groups, and the receding contact angles were particularly dependent on the surface roughness. Therefore, the controllable advancing contact angles and receding contact angles on the plasma-modified PET film were independently determined by plasma functionalization and plasma etching under the combined ICP and CCP mode.     

离子束辅助沉积(IAD)镀制抗电磁干扰与减反射复合薄膜

在K9玻璃基底上将两种物理性能完全不同的薄膜形成组合膜系层,实现了抗电磁干扰、高透光的效果。技术指标为:在400nm-1100nm宽波段范围平均透光率不低于90%;为达到良好的抗电磁干扰屏蔽效果,抗电磁屏蔽其方块电阻值为4±0.5Ω/口。为满足设计技术指标要求,计算设计了抗电磁干扰与减反射复合膜系结构,进行了镀膜工艺实验。实验结果表明,通过采用离子束辅助沉积工艺技术,可改善光学薄膜的微观结构,进而提高了复合薄膜的光学、物理性能和膜层的稳定性。     

Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition

A new preparing technology, very high frequency plasma assisted reactive thermal chemical vapour deposition （VHFPA-RTCVD）, is introduced to prepare SiGe：H thin films on substrate kept at a lower temperature. In the previous work, reactive thermal chemical vapour deposition （I~TCVD） technology was successfully used to prepare SiGe：H thin films, but the temperature of the substrate needed to exceed 400℃. In this work, very high frequency plasma method is used to assist RTCVD technology in reducing the temperature of substrate by largely enhancing the temperature of reacting gases on the surface of the substrate. The growth rate, structural properties, surface morphology, photo- conductivity and dark-conductivity of SiGe：H thin films prepared by this new technology are investigated for films with different germanium concentrations, and the experimental results are discussed.     

Formation of a high hydrophilic/hydrophobic contrast surface on PET substrates by ECR generated sulfur hexafluoride plasma

High hydrophilic/hydrophobic contrast surfaces on polyethylene terephthalate (PET) substrates were formed by shadow mask technique in electron cyclotron resonance generated sulfur hexafluoride plasma atmosphere. The X-ray photoelectron spectroscopy (XPS) analyses indicate that the unmasked PET surfaces contained a high proportion of the CF₂-CF₂ groups, and therefore were hydrophobic with large water contact angle. However, the surface wettability was found to increase drastically on the masked PET surfaces. This could be resulted from a mass of COF (acid fluoride) compounds observed by XPS on the masked film surfaces. The COF compounds could react with atmospheric moisture to form -COOH groups, which in turn increased the surface wettability. In addition, the surface wetting property of the masked areas was found to change significantly with the plasma treatment time, the mask-to-substrate distance and the storage time after the treatment. The best contract in water contact angle obtained from the treated PET samples was larger than 100° after 168 h of storage.     

Effect of deposition power and pressure on rate deposition and resistivity of titanium thin films grown by DC magnetron sputtering

ABSTRACT

Based on magnetron sputtering deposition technology, titanium (Ti) thin films are deposited on silicon (Si) substrate using different preparation conditions such as sputtering power and pressure. The influence of altering these conditions on deposition rate and microstructure is studied. The results show that sputtering power significantly affects the rate of deposition and the resistivity. The deposition rate of the Ti thin film increases when the resistivity decreases under sputtering powers of 150–225?W with a pressure of 0.8?Pa and Argon (Ar) flux of 80 sccm. As sputtering power was increased further (from 225 to 250?W), the deposition rate reduced and the resistivity augmented. Pressure also has influence on the deposition rate and resistivity – when pressure increases from 0.6 to 0.8?Pa, the deposition rate escalates while the resistivity reduces; when the pressure is raised from 0.8 to 1.0?Pa with Ar flux of 100 sccm, the deposition rate decreases and resistivity increases. The surface chemical compositions and the structures of the Ti film were studied by using X-ray photoelectron spectroscopy (XPS) and X-ray diffractometer (XRD). Observing the cross-section of the thin-film samples produced by scanning electron microscope (SEM) reveals the influence of the preparation conditions used on the microstructure and confirms the influence of sputtering power and pressure on the resistivity.     

Electrochemical investigation of the surface energy: Effect of the HF concentration on electroless silver deposition onto p-Si (1 1 1)

Electroless silver deposition onto p-silicon (1 1 1) from 0.005 mol l⁻¹ AgNO₃ solutions with different HF concentration was investigated by using an electrochemical direct current polarization method and open circuit potential-time (Ocp-t) technique. The fact that three-dimensional (3D) growth of silver onto silicon is favored with increasing the HF concentration was ascribed to the drop of the surface energy and approved by electrochemical direct current polarization, Ocp-t technique and atomic force microscopy (AFM). The drop slope of open-circuit potential, K_{−ΔE(OCP)/t}, was educed from the mixed-potential theory. K_{−ΔE(OCP)/t} as well as the deposition rate determined by an inductively coupled plasma atomic emission spectrometry (ICP-AES), increased with the HF concentration, yet was not a linear function. Results were explained by the stress generation and relaxation mechanisms.     

Superconducting properties of ZnO-doped (Bi, Pb)-2223 thick film on Ni and NiO substrates prepared by spray deposition technique

The superconductivity of ZnO-doped (Bi, Pb)-2223 thick film on the Ni and NiO substrates, which was prepared by the spray deposition technique with cold forging, was investigated by characterizing the critical current density (J_c), the critical temperature (T_c), the orientation factor (f), and the microstructure of the film. The thickness of the thick film prepared by the spray deposition method was approximately 10 μm. The maximum J_c value of (Bi, Pb)-2223 film on NiO substrate was approximately 2200 A/cm² (I_c = 110 mA) when the film was sintered at 865 °C for 1 h with a cooling rate of 0.5 °C/min from 865 °C to 650 °C; in the case of Ni substrate, a maximum J_c value of approximately 2000 A/cm² (I_c = 100 mA) was obtained for the (Bi, Pb)-2223 thick film when a cooling rate was 3 °C/min. Such a difference in the J_c values of (Bi, Pb)-2223 thick film on Ni and NiO substrates is attributed to the presence of reaction layer at the (Bi, Pb)-2223 and substrate interface. In addition, the variations in the orientation factor of (Bi, Pb)-2223 thick film on NiO substrate related to those of J_c values. The J_c values of (Bi, Pb)-2223 film on NiO substrate with ZnO doping extremely depended on the amount of ZnO doping and the 0.5 wt% ZnO-doped (Bi, Pb)-2223 thick film deposited on NiO substrate, which was sintered at 835 °C for 1 h in air with a cooling rate of 1 °C/min, showed a J_c value of approximately 1200 A/cm² (I_c = 60 mA). Thus, it is considered that a small amount of ZnO doping was effective in lowering the sintering temperature of (Bi, Pb)-2223 thick film, resulting the improvement in the intragranular weak bonding or Josephson junction.     

低温生长Cu(InGa)Se2薄膜吸收层的掺钠工艺研究

在柔性聚酰亚胺衬底上低温制备Cu(In,Ga)Se₂薄膜太阳能电池, Na的掺入会改善电池特性, 但不同的掺Na工艺对Cu(In,Ga)Se₂薄膜和器件特性的改善机理不同. 本实验通过对比前掺NaF和后掺NaF工艺发现, 在前掺Na工艺下, 由于Na始终存在于Cu(In,Ga)Se₂薄膜生长过程中, Na存在于多晶 Cu(In,Ga)Se₂ 薄膜晶界处, 起到了扩散势垒的作用, 导致晶粒细碎、加剧两相分离, 同时减小了施主缺陷的形成概率; 而在后掺Na工艺下, 掺入的Na对薄膜的结构及生长不产生影响, 仅仅起到了钝化施主缺陷、改善薄膜缺陷态的作用. 同时, 研究表明, 后掺Na工艺中, NaF必须依靠外界能量辅助才能扩散进Cu(In,Ga)Se₂内部, 实验结果证实, 只有衬底温度达到350 ℃以上时, 掺入的NaF才能较好地改善薄膜特性. 最终经掺Na工艺的优化, 得到低温工艺制备的柔性聚酰亚胺衬底器件效率达10.4%.     

MgO(111)衬底MgB2 超薄膜的制备和性质研究

利用混合物理化学气相沉积法(HPCVD)在MgO(111)衬底上制备了干净的MgB₂超导超薄膜. 在背景气体压强, 载气氢气流量以及沉积时间一定的情况下, 改变B₂H₆的流量, 制备得到不同厚度系列的MgB₂超导薄膜样品, 并测量了其超导转变温度 T_c, 临界电流密度J_c等临界参量. 该系列超导薄膜沿c轴外延生长, 表面具有良好的连接性, 且有很高的超导转变温度T_c(0) ≈ 35-38 K和很小的剩余电阻率ρ(42 K) ≈ 1.8-20.3 μΩ·cm^-1. 随着膜厚的减小而减小, 临界温度变低, 而剩余电阻率变大. 其中20 nm的样品在零磁场, 5K时的临界电流密度J_c ≈ 2.3×10⁷ A/cm². 表明了利用HPCVD在MgO(111)衬底上制备的MgB₂超薄膜有很好的性能, 预示了其在超导电子器件中广阔的应用前景. 关键词： MgO(111)衬底 2超薄膜')" href="#">MgB₂超薄膜 混合物理化学气相沉积     

Effect of oxygen pressure on microstructure and magnetic properties of strontium hexaferrite (SrFe12O19) film prepared by pulsed laser deposition

The effects of oxygen pressure during deposition on microstructure and magnetic properties of strontium hexaferrite (SrFe₁₂O₁₉) films grown on Si (100) substrate with Pt (111) underlayer by pulsed laser deposition have been investigated. X-ray diffraction pattern confirms that the films have c-axis perpendicular orientation. The c-axis dispersion (Δθ₅₀) increases and c-axis lattice parameter decreases with increasing oxygen pressure. The films have hexagonal shape grains with diameter of 150-250 nm as determined by atomic force microscopy. The coercivities in perpendicular direction are higher than those in in-plane direction, which shows the films have perpendicular magnetic anisotropy. The saturation magnetization and anisotropy field for the film deposited in oxygen pressure of 0.13 mbar are comparable to those of the bulk strontium hexaferrite. Higher oxygen pressure leads to the films having higher coercivity and squareness. The coercivity in perpendicular and in-plane directions of the film deposited in oxygen pressure of 0.13 mbar are 2520 Oe and 870 Oe, respectively.     

分子束外延法在Sapphire衬底上生长的Zn1－xMgxO薄膜折射率及厚度的测试

利用偏振光椭圆率测量仪对分子束外延(MBE)法在Sapphire衬底上生长的Zn_1-xMg_xO 薄膜的薄膜折射率和厚度进行了测试. 结合ICP法测得的薄膜中的Mg组成量，经数值拟合，导出表征薄膜厚度与薄膜生长条件、薄膜折射率与薄膜中的Mg组成量之间关系的曲线，为MBE法在Sapphire衬底上生长Zn_1-xMg_xO 薄膜时控制薄膜厚度以及在制作Zn_1-xMg_xO 薄膜的波导时控制薄膜的折射率提供了理论依据. 关键词： ZnMgO薄膜 偏振光椭圆率测量仪 折射率 分子束外延(MBE)     

Stage2沉积速率对低温生长CIGS薄膜特性及器件的影响

研究了三步法第二步沉积速率对低温生长Cu(In,Ga)Se₂薄膜结构、 电学特性和器件特性的影响. 通过改变第二步沉积速率发现, 提高沉积速率可以显著促进薄膜晶粒生长, 提高晶粒紧凑程度降低晶界复合, 同时有效改善两相分离现象, 提高电池的开路电压和短路电流, 有助于Cu(In,Ga)Se₂电池光电转换效率的提高. 但同时研究表明, 随着第二步沉积速率的增加, 会促进暂态Cu_2-xSe晶粒的生长, 引起Cu(In,Ga)Se₂薄膜表面粗糙度增大, 并阻碍Na向Cu(In,Ga)Se₂薄膜表面的扩散, 造成施主缺陷钝化效应降低, 薄膜载流子浓度下降和电阻率升高, 且过高的沉积速率会引起电池内部复合增加并产生分流路径, 造成开路电压下降进而引起电池效率恶化. 最终, 通过最佳化第二步沉积速率, 在衬底温度为420℃时, 得到最高转换效率为11.24%的Cu(In,Ga)Se₂薄膜太阳电池.