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1.
The chromium and titanium oxynitride films on glass substrate were deposited by using reactive RF magnetron sputtering in the present work. The structural and optical properties of the chromium and titanium oxynitride films as a function of power variations are investigated. The chromium oxynitride films are crystalline even at low power of Cr target (≥60 W) but the titanium oxynitride films are amorphous at low target power of Ti target (≤90 W) as observed from glancing incidence X-ray diffraction (GIXRD) patterns. The residual stress and strain of the chromium oxynitride films are calculated by sin2 ψ method, as the average crystallite size decreases with the increase in sputtering power of the Cr target, higher stress and strain values are observed. The chromium oxynitride films changes from hydrophilic to hydrophobic with the increase of contact angle value from 86.4° to 94.1°, but the deposited titanium oxynitride films are hydrophilic as observed from contact angle measurements. The changes in surface energy were calculated using contact angle measurements to substantiate the hydrophobic properties of the films. UV-vis and NIR spectrophotometer were used to obtain the transmission and absorption spectra, and the later was used for determining band gap values of the films, respectively. The refractive index of chromium and titanium oxynitride films increases with film packing density due to formation of crystalline chromium and titanium oxynitride films with the gradual rise in deposition rate as a result of increase in target powers.  相似文献   

2.
Titanium oxynitride (TiNxOy) films were deposited on polyethylene terephthalate (PET) substrates by means of a reactive radio frequency (RF) magnetron sputtering system in which the power density and substrate bias were the varied parameters. Experimental results show that the deposited TiNxOy films exhibited an amorphous or a columnar structure with fine crystalline dependent on power density. The deposition rate increases significantly in conjunction as the power density increases from 2 W/cm2 to 7 W/cm2. The maximum deposition rate occurs, as the substrate bias is −40 V at a certain power densities chosen in this study. The film's roughness slightly decreases with increasing substrate bias. The TiNxOy films deposited at power densities above 4 W/cm2 show a steady Ti:N:O ratio of about 1:1:0.8. The water vapor and oxygen transmission rates of the TiNxOy films reach values as low as 0.98 g/m2-day-atm and 0.60 cm3/m2-day-atm which are about 6 and 47 times lower than those of the uncoated PET substrate, respectively. These transmission rates are comparable to those of DLC, carbon-based and Al2O3 barrier films. Therefore, TiNxOy films are potential candidates to be used as a gas permeation barrier for PET substrate.  相似文献   

3.
Molecular beam epitaxy (MBE) grown AlN thin layer on sapphire substrates have been implanted with Cr+ ions for various dose from 1013 to 1015 cm−2. The analyses were carried out by an X-ray diffractometer (XRD), Raman spectroscopy, a spectrophotometer and spectroscopic ellipsometry (SE) for structural and optical analyses. E2(high) and A1(LO) Raman modes of AlN layer have been observed and analyzed. The behavior of Raman shift and the variation in intensity and in peak width of Raman modes as a function of ions flux are explained on the basis of chromium substituting aluminum atom and implantation-induced lattice damage. Both Raman and X-ray analyses reveal that the incorporation of chromium atoms increases in the host lattice with the increasing of Cr ions fluence. The band gap energy was determined by using transmission spectra. It was found that the band gap energy decreases as the ion dose increases. The band gap of the unimplanted AlN is 6.02 eV and it decreases down to 5.92 eV for the Cr+-implanted AlN with a ion dose of 1×1015 cm−2. Optical properties such as optical constants of the samples were examined by using a spectroscopic ellipsometer. It was observed that the refractive index (n) decreases with the increasing of ion dose.  相似文献   

4.
TiO2 thin film was deposited on non-heated Si(1 0 0) substrate by RF magnetron sputtering. The as-deposited films were annealed by a conventional thermal annealing (CTA) and rapid thermal annealing (RTA) at 700 and 800 °C, and the effects of annealing temperature and method on optical properties of studied films were investigated by measuring the optical band gaps and FT-IR spectra. And we also compared the XRD patterns of the studied samples. The as-deposited film showed a mixed structure of anatase and brookite. Only rutile structures were found in samples annealed above 800 °C by CTA, while there are no special peaks except the weak brookite B(2 3 2) peak for the sample annealed at (or above) 800 °C by RTA. FT-IR spectra show the broad peaks due to Ti-O vibration mode in the range of 590-620 cm−1 for the as-deposited film as well as samples annealed by both annealing methods at 700 °C. The studied samples all had the peaks from Si-O vibration mode, which seemed to be due to the reaction between TiO2 and Si substrate, and the intensities of these peaks increased with increasing of annealing temperature. The optical band gap of the as-deposited film was 3.29 eV but it varied from 3.39 to 3.43 eV as the annealing temperature increased from 700 to 800 °C in the samples annealed by CTA. However, it varied from 3.38 to 3.32 eV as the annealing temperature increased from 700 to 800 °C by RTA.  相似文献   

5.
Ge thin films with a thickness of about 110 nm have been deposited by electron beam evaporation of 99.999% pure Ge powder and annealed in air at 100-500 °C for 2 h. Their optical, electrical and structural properties were studied as a function of annealing temperature. The films are amorphous below an annealing temperature of 400 °C as confirmed by XRD, FESEM and AFM. The films annealed at 400 and 450 °C exhibit X-ray diffraction pattern of Ge with cubic-F structure. The Raman spectrum of the as-deposited film exhibits peak at 298 cm−1, which is left-shifted as compared to that for bulk Ge (i.e. 302 cm−1), indicating nanostructure and quantum confinement in the as-deposited film. The Raman peak shifts further towards lower wavenumbers with annealing temperature. Optical band gap energy of amorphous Ge films changes from 1.1 eV with a substantial increase to ∼1.35 eV on crystallization at 400 and 450 °C and with an abrupt rise to 4.14 eV due to oxidation. The oxidation of Ge has been confirmed by FTIR analysis. The quantum confinement effects cause tailoring of optical band gap energy of Ge thin films making them better absorber of photons for their applications in photo-detectors and solar cells. XRD, FESEM and AFM suggest that the deposited Ge films are composed of nanoparticles in the range of 8-20 nm. The initial surface RMS roughness measured with AFM is 9.56 nm which rises to 12.25 nm with the increase of annealing temperature in the amorphous phase, but reduces to 6.57 nm due to orderedness of the atoms at the surface when crystallization takes place. Electrical resistivity measured as a function of annealing temperature is found to reduce from 460 to 240 Ω-cm in the amorphous phase but drops suddenly to 250 Ω-cm with crystallization at 450 °C. The film shows a steep rise in resistivity to about 22.7 KΩ-cm at 500 °C due to oxidation. RMS roughness and resistivity show almost opposite trends with annealing in the amorphous phase.  相似文献   

6.
Deposited with different oxygen partial pressures and substrate temperatures, MgxZn1−xO thin films were prepared using a Mg0.6Zn0.4O ceramic target by magnetron sputtering. The structural and optical properties of the prepared thin films were investigated. The X-ray diffraction spectra reveal that all the films on quartz substrate are grown along (2 0 0) orientation with cubic structure. The lattice constant decreases and the crystallite size increases with the increase of substrate temperature. Both energy dispersive X-ray spectroscopy and calculated results suggest the ratio of Mg/Zn increases with increasing substrate temperature. The thin film deposited with Ts = 500 °C has a minimal rms roughness of 7.37 nm. The transmittance of all the films is higher than 85% in the visual region. The optical band gap is not sensitive to the oxygen partial pressure, while it increases from 5.63 eV for Ts = 100 °C to 5.95 eV for Ts = 700 °C. In addition, the refractive indices calculated from transmission spectra are sensitive to the substrate temperature. The photoluminescence spectra of MgxZn1−xO thin films excited by 330 nm ultraviolet light indicate that the peak intensity of the spectra is influenced by the oxygen partial pressure and substrate temperature.  相似文献   

7.
Preparation and optical properties of barium titanate thin films   总被引:1,自引:0,他引:1  
Barium titanate (BTO) films were prepared by sol-gel spin-coating technique. The crystal structure and optical properties of BTO films have been investigated. The results indicate that the BTO films are single perovskite phase having tetragonal symmetry. The band gap of the BTO films increases with the increasing of layer number and decreasing of solution concentration. The transmittance and band gap of the BTO films annealed at 900 °C is more than that of the BTO films annealed at 700 °C when wavelength is 200-1000 nm. When wavelength is 400-1000 nm, the absorption coefficient α obtained by experiment is higher than that obtained by calculation (close to zero).  相似文献   

8.
In this work, ZnO thin films were prepared by sol-gel method on glass substrates followed by calcinations at 500 °C for an hour. The effect of glucose on the structure and optical properties of the films was studied. The structural characteristics of the samples were analyzed by X-ray diffractometer (XRD) and atomic force microscope (AFM). The optical properties were studied by a UV-visible spectrophotometer. The results show that some of the prepared ZnO thin films have a high preferential oriented c-axis orientation with compact hexagonal wurtzite structure due to a proper amount of glucose introducing. After introducing the glucose additive in ZnO colloids, the intensity of (002) peak, the transmittance, and the optical band gap of the ZnO thin films increases because of the enhanced ZnO crystallization. On the contrary, the absorbance, the film thickness, and the surface root-mean-square (RMS) roughness of the ZnO thin films decreases. The glucose additive could not only improve the surface RMS roughness and microstructure of ZnO thin films, but also enhance the transmittance and the energy band gap more easily.  相似文献   

9.
In this study, high transmittance aluminum oxynitride films were deposited by ion beam sputtering at room temperature. The nitrogen working gas was fed into the ion source and the oxygen gas fed near the sputtered target. The properties of the aluminum oxynitride films were examined by a Varian Cary-5E spectrometer, atomic force microscopy, X-ray diffraction and Fourier transform infrared spectroscope. The films show high transmittance at near UV and visible light regions. The optical constants of the films, refractive index and extinction coefficient, can be controlled by varying the oxygen partial pressure.  相似文献   

10.
Titanium dioxide thin films have been deposited by metalorganic chemical vapor deposition (MOCVD) over sodalime glass substrates at substrate temperatures ranging from 250 °C to 450 °C. The effect of deposition temperature on the structure and microstructure of the obtained films has been studied by x-rays diffraction (XRD) and scanning electron microscopy (SEM), respectively. Diffraction patterns show the existence of a pure anatase phase beside a texture change with the increase of deposition temperature. Micrographs show grain fragmentation with the increase in deposition temperature. UV–Vis. spectra have been recorded by spectrophotometery. The optical energy gap has been calculated for the deposited films from the spectrophotometrical data. Photocatalytic experiments have been carried out. The photocatalytic activity has been found to decrease with the increase in deposition temperature.  相似文献   

11.
Silicon oxynitride films, possessing various compounds of SiO2 and Si3N4, were deposited by ion beam sputtering at room temperature. This technique can easily and precisely control the refractive index and composition of the silicon oxynitride film. Properties of these films, such as the refractive index, the extinction coefficient, the surface roughness, and so on were measured in this study.  相似文献   

12.
衬底温度对HfO_2薄膜结构和光学性能的影响   总被引:1,自引:0,他引:1       下载免费PDF全文
采用直流磁控反应溅射法,分别在室温,200,300,400和500℃下制备了HfO2薄膜。利用X射线衍射(XRD)、椭圆偏振光谱(SE)和紫外可见光谱(UVvis)研究了衬底温度对HfO2薄膜的晶体结构和光学性能的影响。XRD研究结果显示:不同衬底温度下制备的HfO2薄膜均为单斜多晶结构;随衬底温度的升高,(-111)面择优生长更加明显,薄膜中晶粒尺寸增大。SE和UVvis研究结果表明:随衬底温度升高,薄膜折射率增加,光学带隙变小;制备的HfO2薄膜在250~850nm范围内有良好的透过性能,透过率在80%以上。  相似文献   

13.
We report the structural and optical properties of high-energy ion-beam irradiated Co-doped magnesium titanate thin films. (Mg0.95Co0.05)TiO3 (MCT) thin films were deposited on quartz substrates using radio frequency magnetron sputtering. Subsequently, the films were annealed for crystallinity and were irradiated with 100?MeV Ag ions by varying the ion fluence. The X-ray diffraction patterns of the films before and after the irradiation were refined using the Rietveld refinement and the variations in the lattice parameters were correlated with the ion fluence. Although, annealing of thin films results in an enhancement in refractive index and optical bandgap, the ion fluence induces significant changes in the refractive index and optical bandgap. Atomic force microscopy is employed to study the surface morphology of the films. The impact of ion fluence on structural and optical properties of MCT thin films has been investigated.  相似文献   

14.
Vibrational (infrared and Raman) spectroscopy has been used to characterize SiOxNy and SiOx films prepared by magnetron sputtering on steel and silicon substrates. Interference bands in the infrared reflectivity measurements provided the film thickness and the dielectric function of the films. Vibrational modes bands were obtained both from infrared and Raman spectra providing useful information on the bonding structure and the microstructure (formation of nano-voids in some coatings) for these amorphous (or nanocrystalline) coatings. X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) analysis have also been carried out to determine the composition and texture of the films, and to correlate these data with the vibrational spectroscopy studies. The angular dependence of the reflectivity spectra provides the dispersion of vibrational and interference polaritons modes, what allows to separate these two types of bands especially in the frequency regions where overlaps/resonances occurred. Finally the attenuated total reflection Fourier transform infrared measurements have been also carried out demonstrating the feasibility and high sensitivity of the technique. Comparison of the spectra of the SiOxNy films prepared in various conditions demonstrates how films can be prepared from pure silicon oxide to silicon oxynitride with reduced oxygen content.  相似文献   

15.
TiO2 thin films were prepared under various conditions by using a reactive RF sputtering technique. The structural, optical and electrical characteristics of the films have been investigated. All as-deposited films were amorphous. After annealing at T > 673 K, the crystallinity of the observed tetragonal anatase phase appeared improved. The optical band gap, determined by using Tauc plot, has been found to amount to 3.38 ± 0.03 and 3.21 ± 0.03 eV for the direct and indirect transition, respectively. Also the complex optical constants for the wavelength range 300-2500 nm are reported. Using the two-point probe technique, the dark resistivity has been measured as a function of the film thickness, d. The resistivity, ρ, of the samples has been found to decrease markedly with increasing thickness, but only for d < 100 nm. The behaviour of ρd versus d was found to fit properly with the Fuchs and Sondheimer relation with parameters ρo = 4.95 × 106 Ω cm and mean free path, l = 310 ± 2 nm. The log ρ versus 1/T curves show three distinct regions with values for the activation energy of 0.03 ± 0.01, 0.17 ± 0.01 and 0.50 ± 0.02 eV, respectively.  相似文献   

16.
We report on the structural and optical properties of yttria stabilized zirconia (YSZ) thin films grown by pulsed laser deposition (PLD) technique and in situ crystallized at different substrate temperatures (Ts = 400 °C, 500 °C and 600 °C). Yttria-stabilized zirconia target of ∼1 in. diameter (∼95% density) was fabricated by solid state reaction method for thin film deposition by PLD. The YSZ thin films were grown on an optically polished quartz substrates and the deposition time was 30 min for all the films. XRD analysis shows cubic crystalline phase of YSZ films with preferred orientation along 〈1 1 1〉. The surface roughness was determined by AFM for the films deposited at different substrate temperatures. The nano-sized surface roughness is found to increase with the increase of deposition temperatures. For the optical analysis, a UV-vis-NIR spectrophotometer was used and the optical band gap of ∼5.7 eV was calculated from transmittance curves.  相似文献   

17.
《光谱学快报》2012,45(10):677-686
Abstract

Cobalt oxide nanoparticles were synthesized using a facile and convenient sonochemical method, followed by a calcination process. For the synthesis, cobalt nitrate, and sodium borohydride were used as precursors. Polyvinyl alcohol, 3-mercaptopropionic acid, and styrene were used as a stabilizing agent. To identify the structure, optical properties and morphology, the synthesized nanoparticles were characterized using X-ray diffraction, Ultraviolet-Visible Spectroscopy, Fourier-transform infrared spectroscopy, transmission electron microscopy, and scanning electron microscopy. To explain the formation mechanism of cobalt oxide nanoparticles, some investigations were carried out before thermal annealing. In addition, the particle size was tuned by variation of the concentration of 3-mercaptopropionic acid.  相似文献   

18.
This paper deals with some physical properties of antimony sulphide Sb2S3 thin films obtained by an annealing process in sulphur vapors at 300 °C of Sb thermal evaporated thin films deposited on glass substrate. The crystal structure and surface morphology were investigated by both XRD and AFM techniques. This structural study shows that Sb2S3 thin films were well crystallized in orthorhombic structure and some parameters such as the lattice parameter, crystallite size, microstrain and degree of preferred orientation have been reported and correlated with the effect of crystallite size. On the other hand, the refractive index and the extinction coefficient were discussed in terms of the Forouhi–Bloomer model. The optical band gap was found to range from 1.75 to 2.23 eV. Finally, the analysis of the optical parameters extracted from the Urbach–Martienssen and Forouhi–Bloomer models lead to some explanations of the correlations between the structural properties in terms of the crystallite size and optical ones.  相似文献   

19.
采用直流磁控反应溅射法,分别在室温,200,300,400和500 ℃下制备了HfO2薄膜。利用X射线衍射(XRD)、椭圆偏振光谱(SE)和紫外可见光谱(UV-vis)研究了衬底温度对HfO2薄膜的晶体结构和光学性能的影响。XRD研究结果显示:不同衬底温度下制备的HfO2薄膜均为单斜多晶结构;随衬底温度的升高,(-111)面择优生长更加明显,薄膜中晶粒尺寸增大。SE和UV-vis研究结果表明:随衬底温度升高,薄膜折射率增加,光学带隙变小;制备的HfO2薄膜在250~850 nm范围内有良好的透过性能,透过率在80%以上。  相似文献   

20.
The Ti-doped ZnO (ZnO:Ti) thin films have been deposited on glass substrates by radio frequency (RF) reactive magnetron sputtering technique with different Ti doping concentrations. The effect of Ti contents on the crystalline structure and optical properties of the as-deposited ZnO:Ti films was systematically investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM) and fluorescence spectrophotometer. The XRD measurements revealed that all the films had hexagonal wurtzite type structure with a strong (100) preferential orientation and relatively weak (002), (101), and (110) peaks. It was found that the intensity of the (100) diffraction peaks was strongly dependent on the Ti doping concentration. And the full width at half-maximum (FWHM) of (002) diffraction peaks constantly changed at various Ti contents, which decreased first and then increased, reaching a minimum of about 0.378° at 1.43 at.% Ti. The morphologies of ZnO:Ti films with 1.43 at.% Ti showed a denser texture and better smooth surface. All the films were found to be highly transparent in the visible wavelength region with an average transmittance over 90%. Compared with Eg = 3.219 eV for pure ZnO film, all the doping samples exhibited a blue-shift of Eg. It can be attributed to the incorporation of Ti atoms and raising the concentration of carriers. Five emission peaks located at 412, 448, 486, 520, and 550 nm were observed from the photoluminescence spectra measured at room temperature and the origin of these emissions was discussed.  相似文献   

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