A note on TiN/Si (1 0 0) contacts

The contact properties of TiN on p- and n-type Si (1 0 0) obtained by magnetron reactive sputtering were investigated. Schottky diode characteristics were observed on p-type Si (1 0 0) as determined by forward current-voltage (I-V) measurements, but on n-type Si (1 0 0) the reverse I-V relation has shown a nonsymmetrical character. The zero-bias barrier heights evaluated by I-V on both type diodes were in the range of ∼0.60-0.64 V within the range of a few mVs, not more than ∼±(10-30) mV from each other. Incorporation of the effect of the series resistance in the I-V analysis resulted in a significant reduction in the magnitude of the ideality factor of the TiN/p-type specimen. Almost no change has occurred in the barrier height values. The contradictory reports on the TiN/n-type Si (1 0 0) diode characteristics in earlier works have been explained in terms of surface passivation of Si by the HF cleaning solution. It was stated in these reports that following annealing at 673 K the diodes have shown rectifying behavior. It has been speculated, that the nonsymmetrical nature of the TiN/n-Si (1 0 0) showing an intermediate behavior between Ohmic and rectifying behavior is a result of the specimen being exposed to a temperature lower than 673 K during sputtering where no complete depassivation took place. In order to obtain a rectifying behavior of TiN on both n-type and p-type Si surface passivation has to be eliminated.     

Electrical and photovoltaic characteristics of sodium copper chlorophyllin/n-type silicon heterojunctions

Heterojunctions of p-type sodium copper chlorophyllin (p-SCC)/n-type silicon (n-Si) were prepared by deposition of p-SCC film on n-Si wafers using spray-pyrolysis technique. Current-voltage and capacitance-voltage measurements of Au/p-SCC/n-Si/In heterojunctions were performed to discuss the electrical properties of these heterostructures. Rectifying characteristics were observed, which are definitely of the diode type. The current-voltage measurements suggest that the forward current in these junctions involves tunnelling and the results showed that the forward current can be explained by a multi-tunnelling capture-emission model in which the electron emission process dominates the carrier transport mechanism. On the other hand, the reverse current is probably limited by the same conduction process. The capacitance-voltage behavior indicates an abrupt heterojunction model is valid for Au/p-SCC/n-Si/In heterojunctions and the junction parameters such as, built-in potential, V_D, carrier concentration, N, the width of depletion layer, W, were obtained. The temperature and frequency dependence of the measured capacitance were also studied. The loaded I-V characteristics under white illumination provided by tungsten lamp (80 mW/cm²) give values of 400 mV, 0.9 mA, 0.38 and 1.7% for the open-circuit voltage, V_oc, the short-circuit current, I_sc, the fill factor, FF, and conversion efficiency, η, respectively.     

Fabrication and characterization of Fe-doped titania semiconductor electrodes with p-n homojunction devices

The nano-TiO₂ electrode with a p-n homojunction device was designed and fabricated by coating of the Fe³⁺-doped TiO₂ (p-type) film on top of the nano-TiO₂ (n-type) film. These films were prepared from synthesized sol-gel TiO₂ samples which were verified as anatase with nano-size particles. The semiconductor characteristics of the p-type and n-type films were demonstrated by current-voltage (I-V) measurements. Results show that the rectifying curves of undoped TiO₂ and Fe³⁺-doped TiO₂ sample films were observed from the I-V data illustration for both the n-type and p-type films. In addition, the shapes of the rectifying curves were influenced by the fabrication conditions of the sample films, such as the doping concentration of the metal ions, and thermal treatments. Moreover, the p-n homojunction films heating at different temperatures were produced and analyzed by the I-V measurements. From the I-V data analysis, the rectifying current of this p-n junction diode has a 10 mA order higher than the current of the n-type film. The p-n homojunction TiO₂ electrode demonstrated greater performance of electronic properties than the n-type TiO₂ electrode.     

Electroluminescence from a ZnO homojunction device grown by pulsed laser deposition

A ZnO homojunction light emitting device was grown on n+ GaAs substrate by pulsed laser deposition. As-doped ZnO film by diffusion of As from the substrate was used for the p-type side and Al-doped ZnO film for the n-type side of the device. A distinct electroluminescence emission consisting of a dominant emission peak at ∼2.5 eV and a weak shoulder centered at ∼3.0 eV was observed at room temperature. The I-V characteristic of the ZnO homojunction showed a good rectifying behavior with a turn-on voltage of ∼4.5 V and a reverse breakdown voltage of ∼9 V.     

Photovoltage analysis of a heterojunction solar cell

According to the p-n junction model of Shockley,the relationship between the equilibrium carrier concentrations of n-type and p-type semiconductors on the edges of the depletion region of a p-n junction solar cell is analysed.The calculation results show that the photovoltage can exceed the built-in voltage for a special kind of heterojunction solar cell.When the photovoltage exceeds the built-in voltage under illumination,the dark current and the photocurrent are impeded by the peak of voltage barrier at the interface and the expression of the total I-V characteristic is given.     

Electrical properties of metal-GaAs Schottky barriers

Schottky barrier contacts have been fabricated by vacuum evaporation of thin films of six different metals (Mg, In, Al, Au, Bi and Sb) onto chemically cleaned n-type GaAs substrates. Bi and Sb contacts on GaAs have been reported for the first time. The contacts were examined for their C-V and I-V characteristics. The diodes exhibit near ideal characteristics for all the metals with values of the ideality factor n ranging from 1.06 to 1.1. The values of the barrier height obtained from C-V measurements could be brought into agreement with those obtained from I-V measurements only when the ideality factor was also included in the expression of the saturation current. By employing the most recent and reliable values of metal work function φ_M, the dependence of barrier height on φ_M has been investigated and an estimate of the surface state density and the Fermi level at the GaAs surface has been made. The surface state density obtained from this analysis is significantly larger than that reported by previous workers.     

Structural and dielectric properties of La- and Ti-modified K0.5Na0.5NbO3 ceramics

We report the results of studies of rectifying behavior, positive magneoresistance (MR), the charge-transport mechanism and the effect of an electric field on a ZnO (n)/La_0.5Pr_0.2Sr_0.3MnO₃ (LPSMO) (p)/SrNb_0.002Ti_0.998O₃ (SNTO) (n) heterostructure comprising two p–n junctions fabricated using the pulsed laser deposition technique. The heterostructure exhibits rectifying behavior over a wide temperature and field range having hysteresis in I–V behavior (forward bias) due to the tunneling of charge carriers. It is also observed that, depending on the nature of the electric field bias to n-type ZnO and SNTO, the junction resistance becomes modified, which has been explained on the basis of spin injection in the heterostructure. The observation of unconventional positive MR at room temperature has been justified on the basis of interface effects and the reduction in barrier height obtained using fitting of the I–V data by a thermionic emission model.     

Electrophoretically deposited polyaniline/ZnO nanoparticles for p–n heterostructure diodes

A p–n heterostructure diode of polyaniline (PANI) and ZnO nanoparticles was prepared by the electrophoretic deposition of PANI on ZnO nanoparticles thin film coated fluorine doped tin oxide (FTO) glass at room temperature. The morphological, structural and optical studies substantiated the penetration, bonding and the interaction of PANI molecules with ZnO nanoparticles thin film substrates. The prominent blue shift in UV-Vis spectra indicated the strong interaction between ZnO and PANI through the decreased degree of orbital overlap between π$\pi$ electrons of the phenyl rings with the lone pair of the nitrogen atom in the PANI molecules. The I–V$I\text{–}V$ characteristics of PANI/ZnO heterostructure diode showed weak rectifying behavior with non-linear nature of I–V$I\text{–}V$ curve of PANI/ZnO heterostructure device. The typical ohmic behavior was observed by the I–V$I\text{–}V$ characterization of PANI/ZnO heterostructure at the interface of PANI and ZnO thin film layer without top Pt thin layer contact.     

Structure and transport mechanisms of Si/porous Si n-p junctions prepared by liquid phase epitaxy

Heterojunction devices of n-Si/p-PSi were fabricated by growing n-Si films onto p-type porous Si substrates by liquid phase epitaxy. The structure of the grown films was checked using scanning electron microscopy and X-ray diffraction spectroscopy. X-ray diffraction measurements showed that the grown films have monocrystalline structure oriented along (1 1 1) direction with mainly cubic phase. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured over the temperature range from 298 to 398 K. The analysis of the dark I-V characteristics of n-Si/p-PSi at several temperatures is done to elucidate the conduction mechanisms and the evaluation of the heterojunction parameters is presented. Two carrier transport mechanisms are believed to be at the origin of the forward current. At low bias voltage (V ≤ 0.4 V) the forward current is dominated by the recombination at the porous silicon side of the space charge region. In the 0.5 V ≤ V ≤ 1.4 V region, the current transport is due to the space charge—limited current mechanism dominated by a single trapping level of energy 0.41 eV. The reverse current is considered to be mainly generated in the depletion region of the porous silicon. The capacitance-voltage results confirm an abrupt junction with a homogenous distribution of the impurities inside the space charge region. Information on the depletion region, built-in voltage and net carrier concentration were obtained from the dark C-V characteristics.     

Molecular control over Ag/p-Si diode by organic layer

Electrical transport properties of Ag metal-fluorescein sodium salt (FSS) organic layer-silicon junction have been investigated. The current-voltage (I-V) characteristics of the diode show rectifying behavior consistent with a potential barrier formed at the interface. The diode indicates a non-ideal I-V behavior with an ideality factor higher than unity. The ideality factor of the Ag/FSS/p-Si diode decreases with increasing temperature and the barrier height increases with increasing temperature. The barrier height (φ_b=0.98 eV) obtained from the capacitance-voltage (C-V) curve is higher than barrier height (φ_b=0.72 eV) derived from the I-V measurements. The barrier height of the Ag/FSS/p-Si Schottky diode at the room temperature is significantly larger than that of the Ag/p-Si Schottky diode. It is evaluated that the FSS organic layer controls electrical charge transport properties of Ag/p-Si diode by excluding effects of the SiO₂ residual oxides on the hybrid diode.     

Interaction of zinc interstitial with oxygen vacancy in zinc oxide: An origin of n-type doping

Interaction of a zinc interstitial (Zn_i) with an oxygen vacancy (V_O) was investigated to understand an origin of natively n-type characteristics of ZnO using density functional theory with the hybrid functional. The V_O–Zn_i complex is formed with a formation of 3.82 eV and is a shallow donor with +1 charge state near the conduction band minimum. Its formation energy, however, is not low enough to be stable thermodynamically. Energy barrier for Zn_i migration in the V_O–Zn_i complex is studied to consider its existence from kinetic aspect, and a high value of 1.3 eV is obtained with the kick-out process. Therefore, the bound Zn_i to V_O can exist and supply electrons for native n-type ZnO kinetically.     

Electrical characterization and fabrication of organic/inorganic semiconductor heterojunctions

Thin films of polyaniline (PANI) titanium dioxide (TiO₂) nanocomposites prepared with and without surfactant (tetradecyltrimethylammonium bromide, TTAB) were formed by spin coating onto chemically cleaned p-type silicon substrates. The current–voltage characteristics of the Au/PANI TiO ₂/p-Si/Al and Au/PANI TiO ₂ TTAB/p-Si/Al heterojunctions had rectifying behavior with the potential barrier formed between the polymeric thin films and p-Si semiconductor, and they were analyzed on the basis of the standard thermionic emission (TE) theory. Cheung functions combined with conventional forward I–V characteristics were used to obtain diode parameters such as barrier height, ideality factor and series resistance (R _s ). The values of barrier height, ideality factor and R _s were found as 0.496±0.003 eV, 2.313±0.067 and 23.633±7.554 Ω for the Au/PANI TiO ₂/p-Si/Al device; 0.494±0.003 eV, 2.167±0.018 and 12.929±2.217 Ω for the Au/PANI TiO ₂ TTAB/p-Si/Al device. In addition, the energy distributions of the interface state density of the devices were determined from the forward I–V characteristics by taking into account the bias dependence of the ideality factor and barrier height. It was seen that the PANI TiO ₂ TTAB/p-Si device had slightly higher interface state density values than those of the PANI TiO ₂/p-Si device.     

Post-fabrication annealing effects on the performance of P3HT:PCBM solar cells with/without ZnO nanoparticles

In this study, P3HT:PCBM organic photovoltaic (OPV) devices, with or without ZnO nanoparticles buffer layer between the photoactive layer (P3HT:PCBM) and the cathode (Al top electrode), were fabricated. The devices were annealed at 145 °C either before or after depositing the top electrode. The objective of this study was to investigate the effects of the ZnO buffer layer and pre-/post-fabrication annealing on the general performance of these devices. The short-circuit current density (J_SC), open-circuit voltage (V_OC) and the external quantum efficiency (EQE) of the OPV devices were improved by the insertion of the ZnO layer and post-fabrication annealing. The post-fabrication annealed devices, with or without the ZnO layer, exhibited higher values of J_SC, V_OC and EQE than those of similar devices annealed before depositing the Al metal. This can be attributed to, among other things, improved charge transport across the interface between the photoactive layer and the Al top electrode as a result of post-annealing induced modification of the interface morphology.     

Device and performance parameters of Cu(In,Ga)(Se,S)2-based solar cells with varying i-ZnO layer thickness

In pursuit of low-cost and highly efficient thin film solar cells, Cu(In,Ga)(Se,S)₂/CdS/i-ZnO/ZnO:Al (CIGSS) solar cells were fabricated using a two-step process. The thickness of i-ZnO layer was varied from 0 to 454 nm. The current density-voltage (J-V) characteristics of the devices were measured, and the device and performance parameters of the solar cells were obtained from the J-V curves to analyze the effect of varying i-ZnO layer thickness. The device parameters were determined using a parameter extraction method that utilized particle swarm optimization. The method is a curve-fitting routine that employed the two-diode model. The J-V curves of the solar cells were fitted with the model and the parameters were determined. Results show that as the thickness of i-ZnO was increased, the average efficiency and the fill factor (FF) of the solar cells increase. Device parameters reveal that although the series resistance increased with thicker i-ZnO layer, the solar cells absorbed more photons resulting in higher short-circuit current density (J_sc) and, consequently, higher photo-generated current density (J_L). For solar cells with 303-454 nm-thick i-ZnO layer, the best devices achieved efficiency between 15.24% and 15.73% and the fill factor varied between 0.65 and 0.67.     

Enhanced nonlinear current-voltage behavior in Au nanoparticle dispersed CaCu3Ti4O12 composite films

An enhanced nonlinear current-voltage behavior has been observed in Au nanoparticle dispersed CaCu₃Ti₄O₁₂ composite films. The double Schottky barrier model is used to explain the enhanced nonlinearity in I-V curves. According to the energy-band model and fitting result, the nonlinearity in Au: CCTO film is mainly governed by thermionic emission in the reverse-biased Schottky barrier. This result not only supports the mechanism of double Schottky barrier in CCTO, but also indicates that the nonlinearity of current-voltage behavior could be improved in nanometal composite films, which has great significance for the resistance switching devices.     

ZnO纳米线场效应管的制备及I-V特性研究

采用静电探针和原子力探针技术,将化学气相沉积工艺制备的,长度为30—200 μm,直径80—750 nm的单根半导体ZnO纳米线搭接在Au,Zn,Al不同功函的金属隔离沟道两端,构建出了最基本的ZnO纳米线绝缘栅场效应管. 研究了沟道类型、纳米线直径、退火温度和外加栅压对ZnO纳米线场效应管I-V特性的影响. 利用半导体与金属材料的肖特基接触、欧姆接触的产生机理及电子输运理论,对结果进行了分析和讨论. 关键词： ZnO纳米线 场效应管 I-V特性')" href="#">I-V特性     

Fabrication and electrical characterization of thermally deposited amorphous Se0.82In0.18 on n-Si (100)

Amorphous (a-) Se_0.82In_0.18 thin films have been deposited onto n-type silicon (n-Si) single crystal, using the three-temperature technique, in the fabricated configuration of Au/a-Se_0.82In_0.18/n-Si/Al. The current density-voltage (J–V) characteristics have been measured at different isotherms in the range of 198–313 K, thus inspecting the conduction mechanisms comparing with Au/a-Se/n-Si/Al heterojunctions. The analysis proved that the forward bias is characterized by two parts: current increasing exponentially with the applied voltage (low voltage bias region, V<0.2 V), and non-exponentially in the higher voltage region (V>0.2 V). At the low bias region, the current was dominated by a multi-tunneling capture-emission process with a rather temperature-independent effect in the temperature range investigated. However, at the high voltage region, the effect of temperature becomes more pronounced with an ohmic character in the range of 198 to 273 K. For temperatures higher than 273 K, and below the glass transition temperature of a-Se_0.82In_0.18 (T _g～330 K), the high voltage region could be subdivided into two parts: an ohmic conduction range that limited at bias voltage of 0.20 V<V<0.46 V, and a space charge limited current region for bias voltage of V>0.46 V. The reverse J–V characteristics showed a deviation from that of the ideal diode behavior, analogous to that of pure a-Se/n-Si heterojunctions.     

Analysis of the electrical properties of p–n GaAs homojunction under dc and ac fields

In this work, the n-type GaAs films were grown on p-type GaAs single crystalline substrate by metal organic chemical vapor deposition (MOCVD). The temperature dependence of the current density–voltage (J–V) characteristics of n-GaAs/p-GaAs homojunction contacts were measured in the temperature range 293–413 K. These characteristics showed a rectifying behavior consistent with a potential barrier formed at the interface. The forward current density–voltage characteristics under low voltage biasing were explained on the basis of thermionic emission mechanism. The high values of ideality factor (n) may be ascribed to the presence of an interfacial layer. Analysis of the experimental data under the reverse voltage biasing suggests a dominant mechanism was found to be a Schottky effect. The impedance properties and the alternating current (ac) conductivity of n-GaAs/p-GaAs homojunction were investigated as a function of frequency and temperature. The ac conductivity was found to obey the universal power law. The variation of the exponent s with the temperature suggested that the conduction mechanism is an overlapping large-polaron tunneling (OLPT) model associated with correlated barrier hopping (CBH) model at the higher temperature.     

Characterization of Schottky barrier diodes fabricated from electrochemical oxidation of α phase brass

By careful selection of chloride ion concentration in aqueous sodium chloride, electrochemical oxidation of α phase brass is shown to permit fabrication of either p-type copper (I) oxide/metal or n-type zinc oxide/metal Schottky barrier diodes. X-ray photoelectron and Auger electron spectroscopies provide evidence that barrier formation and rectifying qualities depend on the relative surface abundance of copper (I) oxide and zinc oxide. X-ray diffraction of the resulting diodes shows polycrystalline oxides embedded in amorphous oxidation products that have a lower relative abundance than the diode forming oxide. Conventional I/V characteristics of these diodes show good rectifying qualities. When neither of the oxides dominate, the semiconductor/metal junction displays an absence of rectification.     

Nonideality of Au/Si and Au/GaAs Schottky barriers due to process-induced defects

A mechanism of local lowering of the Schottky barrier height (SBH) is proposed, which causes nonideality in nearly ideal Au/n-Si and Au/n-GaAs Schottky barriers. Positively ionized defects generated by the process very close to the interface induce electrons in the metal-induced gap states (MIGS) and lower the SBH locally. The spatial density distribution of the ionized defects obtained from the SBH distribution is determined by the unique interaction with the MIGS. The defects are considered to have the negative-U property and are neutralized at very close positions to the MIGS. The potential distributions close to the interface have a considerable potential drop due to the large defect density. These inhomogeneous potentials are coincident with the energy level scheme of the defect identified as the defect causing the nonideality. This defect is Si self-interstitial in Au/Si SB, and As antisite in Au/n-GaAs SB. This MIGS with process-induced defect model supersedes the previously proposed two major Fermi level pinning models. The mystery of the T₀ effect is solved. The thermionic-field emission current taking place in the strong electric field has influence on the I-V characteristics at low temperatures. Regarding the C-V characteristics of Au/Si SB, the observed extra capacitance under the forward bias is an experimental evidence in accordance with the proposed model.