Laser scribing of gallium doped zinc oxide thin films using picosecond laser

We report on a comprehensive study of picosecond laser scribing of gallium doped zinc oxide (GZO) thin films deposited on glass substrates using 355 nm, 532 nm and 1064 nm radiation, respectively. In this study, we investigated the influence of front side and rear side irradiation and determined single pulse ablation thresholds for all three wavelengths. Good ablation quality with full electrical isolation, steep groove walls and a smooth groove bottom was achieved by 355 nm rear side processing with a scanning speed of 224 mm/s. Ridges at the groove rims were found to be between 15 nm and 45 nm high. At similar scanning speed, laser scribing using 532 nm and 1064 nm radiation resulted in a lower ablation quality due to a higher roughness of the groove bottoms or higher ridges at the groove rims.     

Highly efficient third-harmonic generation with electro-optically Q-switched diode-end-pumped Nd:YVO4 slab laser

We have achieved efficient third-harmonic generation (THG) with an electro-optically Q-switched diode-end-pumped slab laser by cascading second-harmonic and sum-frequency generation in a lithium triborate (LBO) crystal. The high conversion efficiency, short pulse length and high pulse energy is the characteristic of the output 355 nm light. An average power of 11.1 W at a repetition rate of 10 kHz was achieved. The pulse energy is 1.1 mJ and the pulse length is 5 ns. The peak power of pulse is 0.22 MW. The conversion efficiency from 1064 nm to 355 nm reached 44.4% which is to our knowledge the highest conversion efficiency. Furthermore, the 355 nm light is near TEM₀₀ mode. The beam quality is M² < 1.5. In this paper, the experimental setup, results and the factors which can affect the conversion efficiency are discussed.     

High efficiency generation of 355 nm radiation by extra-cavity frequency conversion

High efficiency extra-cavity third harmonic generation (THG) of 355 nm has been developed. A laser diode (LD) end-pumped, acoustic-optical Q-switched Nd:YAG laser was used as the fundamental wave source. With an input pump power of 25 W, average power of 6.75 W at 1064 nm was generated with the repetition rate 12 kHz and pulse duration 10 ns. Using the extra-cavity frequency conversion of three critical phase match (CPM) LiB₃O₅ (LBO) crystals, 3.2 W third harmonic radiation at 355 nm was obtained. The optical-to-optical (1064 nm to 355 nm) conversion efficiency was up to 47.4%.     

Comparison of luminescence spectra of natural spodumene under KrCl laser and e-beam excitation

Spectral characteristics of pulsed photoluminescence (PL) and pulsed cathodoluminescence (PCL) of a natural spodumene were investigated. PL was excited by laser radiation at 222 nm with pulse duration of 10 ns at FWHM. PCL was excited by electron beams with pulse duration from 0.1 up to 4 ns and with current densities of 40-200 A/cm². There was a dominant broad band at 600 nm due to the manganese impurity in PCL spectra. But in PL spectra, the orange band had the intensity comparable with intensities of intrinsic defect bands. At sample cooling by liquid nitrogen, the intensity of orange band in the PCL spectrum increased by two times and the short-wave shoulder of the band reduced.     

Generation of 7.8 W at 355 nm from an efficient and compact intracavity frequency-tripled Nd:YAG laser

A high power, quasi-continuous wave ultraviolet laser at 355 nm was obtained by intracavity frequency tripling of a diode side-pumped acousto-optic (AO) Q-switched Nd:YAG laser. Type II critical phase-matched KTP and LBO crystals were used for the second harmonic generation and the third harmonic generation, respectively. Under the pump power of 180 W, 7.8 W average output power at 355 nm was obtained at 8 kHz with the pulse width of 50 ns, corresponding to the pump-to-ultraviolet conversion efficiency of 4.3%. The peak power and single pulse energies were estimated to be 18.8 kW and 938 μJ. Its far-field divergence was measured to be about 3.8 mrad. The instability of the 355 nm laser was less than 1% at an output power of 6.3 W for 2 h operation.     

Laser fluence, repetition rate and pulse duration effects on paint ablation

The efficiency (mm³/(J pulse)) of laser ablation of paint was investigated with nanosecond pulsed Nd:YAG lasers (λ = 532 nm) as a function of the following laser beam parameters: pulse repetition rate (1-10,000 Hz), laser fluence (0.1-5 J/cm²) and pulse duration (5 ns and 100 ns). In our study, the best ablation efficiency (η ≅ 0.3 mm³/J) was obtained with the highest repetition rate (10 kHz) at the fluence F = 1.5 J/cm². This ablation efficiency can be associated with heat accumulation at high repetition rate, which leads to the ablation threshold decrease. Despite the low thermal diffusivity and the low optical absorption of the paint (thermal confinement regime), the ablation threshold fluence was found to depend on the pulse duration. At high laser fluence, the ablation efficiency was lower for 5 ns pulse duration than for the one of 100 ns. This difference in efficiency is probably due to a high absorption of the laser beam by the ejected matter or the plasma at high laser intensity. Accumulation of particles at high repetition rate laser ablation and surface shielding was studied by high speed imaging.     

Selective patterning and scribing of Ti thin film on glass substrate by 532 nm picosecond laser

In this paper, the feasibility of Ti film coated on glass substrate scribed via a 532 nm picosecond laser is investigated. Laser irradiations from the film side and from the transparent substrate side are performed for comparison. Optical microscopy, SEM, surface stylus and contact resistance measurement reveal that the Ti film can be completely removed with no damage to the glass substrate, using optimized process parameters. The complete removal threshold for the film for front-side scribing is found at 120 mJ/cm², while the minimum laser fluence for complete scribing is 70 mJ/cm² in the case of back-side scribing. The lines scribed from the front side exhibit obvious thermal effects such as heat affected zones, burr and micro cracks. Back-side scribing exhibits non-thermal behavior, which also can increase the process speed for the scribing of a Ti film on glass to 1000 mm/s. This makes the back-side laser scribing of Ti film a promising technique.     

Nonlinear optical absorption studies of an organo-metallic complex by Z-scan technique

An organo-metallic complex, [(CH₃)₄N][Ni(dmit)₂] (dmit²⁻ = (1,3-dithiole-2-thione-4,5-dithiolate), abbreviated as MeNi, is synthesized. The nonlinear optical absorption properties of MeNi dissolved in acetone have been studied using the open-aperture Z-scan technique with 40 ps pulse width at 1064 nm and 1 ns, 15 ns pulse width at 1053 nm, respectively. Strong saturable absorption has been found when the sample solution is irradiated by 40 ps and 1 ns laser pulses. While irradiated with 15 ns laser pulse, a stronger reverse saturable absorption has been found. The nonlinear optical absorption coefficients are −1.03 × 10⁻¹¹ m/W, −1.85 × 10⁻¹¹ m/W and 3.84 × 10⁻¹⁰ m/W, respectively. The mechanism responsible for the difference between the results is analyzed. All the results suggest that this material may be a promising candidate for the application to laser pulse compression in the near-infrared waveband.     

Optical features of the gold nanoparticles deposited on ITO substrates

We have performed firstly studies of the photoinduced second order susceptibilities in the Au nanoparticles (NP) A, B and C under simultaneous influence of the bicolor 1064 nm and bicolor laser treatment (1064 nm 10 ns pulsed laser with pulse power densities 532 nm 10 ns laser treatment and the cw 300 mW 532 nm SHG coherent laser beams. We have studied three types of samples possessing irregular and different dense parameters of the Au NP deposited on the ITO substrate. We have found that the maximal bicolor (1064 nm and 532 nm) stimulated optical second harmonic generation for the 10 ns pulse duration was observed for the samples possessing irregular Au NP deposited on the ITO. We have performed studies of the photoinduced second order susceptibilities in the Au NP under simultaneous influence of the bicolor 1064 nm and bicolor laser treatment (1064 nm 10 ns pulsed laser with pulse power densities 532 nm 10 ns laser treatment and the cw 300 mW 532 nm SHG coherent laser beams). We have found that during the 15-20 min of the cw treatment there occur the principal changes in the absorption maxima. These maxima indicate on the occurrence of the additional absorption nearby the 308 nm and 310 nm and 345 nm spectral bands. The later are caused by the occurrence of the trapping levels in the border between the ITO substrate and the Au nanoparticles.     

LD end pumped, actively mode locked and passively Q-switched Nd:YAP laser at 1341 nm

An end pumped Nd:YAP laser at 1341 nm is actively mode locked and passively Q-switched. Pumping was done with a pulsed high power laser diode with maximum power 425 W. V³⁺:YAG with 61% initial transmission served as saturable absorber, and an acousto-optic modulator is used for active mode locking. The output pulse train with 69 ns duration has a total energy of 3.2 mJ with ±4% shot-to-shot fluctuation. The peak output energy of a single mode locked pulse is 0.25 mJ. The pulse duration of a single mode locked pulse is less than 800 ps. The output laser beam is nearly diffraction limited with 1.6 mm diameter, and beam propagation factor M² about 1.3.     

Laser annealing of Al implanted silicon carbide: Structural and optical characterization

Pulsed-laser-based methods have been applied for post-implant annealing of p-type Al-doped 4H-SiC wafers in order to restore the crystal structure and to electrically activate the doping species. The annealing was performed with the third harmonic (355 nm) of a Nd:YAG laser at 4 ns pulse duration. The epilayers were characterized by micro-Raman spectroscopy under surface and cross-sectional backscattering. Changes in the phonon mode-intensity were related to the laser annealing induced recrystallization of the implanted material. The results were compared with changes in the infrared reflectivity across the Reststrahlen band. Transmission electron microscopy analysis showed the formation of columnar polycrystalline structure after the laser annealing process.     

An efficient and compact laser-diode end-pumped intracavity frequency-tripled Nd: YVO4 355 nm laser

By exploiting the intracavity frequency conversion configuration, a diode end-pumped acousto-optic (AO) Q-switched Nd:YVO₄ 355 nm laser was demonstrated in this paper. Two LBO crystals were inserted in the cavity to realize the frequency tripling operation, a cascade of the second harmonic generation (SHG) and sum frequency mixing (SFM). Under the absorbed pump power of 13 W, the maximum average output power at 355 nm was obtained to be 1.32 W at the repetition frequency of 17 kHz, with the optical-to-optical conversion efficiency of 10.2%. The corresponding pulse width was 10.2 ns, with the energy of a single pulse and corresponding peak power estimated to be 77.6 μJ and 7.61 kW, respectively.     

Line patterning with large refractive index changes in the deep inside of glass by nanosecond pulsed YAG laser irradiation

Nanosecond (∼100 ns) pulsed (10 Hz) Nd:YAG laser operating at the wavelength (λ) of 1064 nm with pulse energies of 0.16-1.24 mJ/cm² has irradiated 10Sm₂O₃·40BaO·50B₂O₃ glass. It is demonstrated for the first time that the structural modification resulting the large decease (∼3.5%) in the refractive index is induced by the irradiation of YAG laser with λ=1064 nm. The lines with refractive index changes are written in the deep inside of 100-1000 μm depths by scanning laser. The line width is 1-13 μm, depending on laser pulse energy and focused beam position. It is proposed that the samarium atom heat processing is a novel technique for inducing structural modification (refractive index change) in the deep interior of glass.     

Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342 nm with V:YAG saturable absorber

We have demonstrated an efficient diode-pumped passively Q-switched Nd:GdVO₄ laser working at 1342 nm by using an uncoated V³⁺:YAG crystal as the saturable absorber, in which both a-cut and c-cut Nd:GdVO₄ crystals are employed. At the maximum absorbed pump power of 9.45 W, the maximum average output power can reach 519 mW and 441 mW corresponding to the output coupler with different transmission of 3% and 10% by using an a-cut Nd:GdVO₄ crystal at 1342 nm, while the shortest pulse duration could be as low as 21.7 ns and 22.3 ns with the repetition rate of 48.41 kHz and 53.25 kHz by using a c-cut Nd:GdVO₄ crystal, corresponding to the output coupler with different transmission of 3% and 10% at 1342 nm, and the single Q-switched pulse energy are 6.67 uJ and 7.06 uJ, the pulse peak power are 307 W and 316 W, respectively. The experimental results show that c-cut Nd:GdVO₄ laser can generate shorter pulse with higher peak power in comparison with a-cut one.     

Mg-based photocathodes prepared by ns, ps and fs PLD for the production of high brightness electron beams

Mg-based films have been prepared by pulsed laser deposition technique for photocathode applications. We have investigated the influence of pulse laser duration on morphology and photoemissive properties. Two laser sources have been used, generating pulses of 30 ns at 308 nm (XeCl excimer laser), 5 ps and 500 fs at 248 nm (KrF excimer laser) to grow Mg films onto Si and Cu substrates in high vacuum (∼10⁻⁷ Pa) and at room temperature. Morphological investigations carried out by scanning electron microscopy (SEM) have revealed that, in our experimental conditions, the number and the mean size of the droplets on the films surfaces decreases as the pulse laser duration shortens. The contamination level of Mg film surfaces have been studied by energy dispersive X-ray spectroscopy (EDX). The photoelectron performances in terms of quantum efficiency (QE) and emission stability have been tested in a UHV DC photodiode cell (10⁻⁷ Pa). Measures of the QE of the samples surfaces have revealed a decrease on the initial value for Mg-based photocathodes prepared by fs laser (from 7.8 × 10⁻⁴ to 6.6 × 10⁻⁴) PLD with respect to ps (from 6.2 × 10⁻⁴ to 7.4 × 10⁻⁴) and ns lasers (from 5.0 × 10⁻⁴ to 1.6 × 10⁻³). A comparison among Mg-based photocathodes prepared by ns, ps and fs PLD for the production of high brightness electron beams has been presented and discussed.     

Fabrication of 550 nm gratings in fused silica by laser induced backside wet etching technique

A series of 550 nm spacing gratings were fabricated in fused silica by laser induced backside wet etching (LIBWE) method using the fourth harmonic of a Q-switched Nd:YAG laser (wavelength: λ = 266 nm; pulse duration: FWHM = 10 ns). During these experiments we used a traditional two-beam interference method: the spatially filtered laser beam was split into two parts, which were interfered at a certain incident angle (2θ = 28°) on the backside surface of the fused silica plate contacting with the liquid absorber (saturated solution of naphthalene-methyl-methacrylate c = 1.85 mol/dm³). We studied the dependence of the quality and the modulation depth of the prepared gratings on the applied laser fluence and the number of laser pulses. The surface of the etched gratings was characterized by atomic force microscope (AFM). The maximum modulation depth was found to be 180-200 nm. Our results proved that the LIBWE procedure is suitable for production of submicrometer sized structures in transparent materials.     

ps-laser scribing of CIGS films at different wavelengths

Continuous growth of the thin-film electronics market stimulates the development of versatile technologies for large-scale patterning of thin-film materials on rigid and flexible substrates, and laser technologies are a promising method to accomplish the scribing processes. Lasers with picosecond pulse duration were applied in scribing of complex multilayered CuIn _x Ga_(1−x)Se₂ (CIGS) solar cells deposited on a polyimide substrate. The ablative properties of the films were examined as a function of the wavelength of laser radiation, pulse energy, and the irradiation dose. The selective removal of ITO and CIGS layers was achieved with 355 nm irradiation without any significant damage to the underlying layers in the ITO/CIGS/Mo/PI solar cell system. The 355 nm wavelength was also found to be favorable for scribing of absorber layer in a ZnO/CIGS/Mo/PI solar cell system. 266 nm radiation significantly modified the film structure due to high absorption. Extensive melt formation in the CIGS layer was found when 532 nm radiation was applied, though the trenches were smooth and crack-free.     

Analyses of surface coloration on TiO2 film irradiated with excimer laser

TiO₂ film of around 850 nm in thickness was deposited on a soda-lime glass by PVD sputtering and irradiated using one pulse of krypton-fluorine (KrF) excimer laser (wavelength of 248 nm and pulse duration of 25 ns) with varying fluence. The color of the irradiated area became darker with increasing laser fluence. Irradiated surfaces were characterized using optical microscopy, scanning electron microscopy, Raman spectroscopy and atomic force microscopy. Surface undergoes thermal annealing at low laser fluence of 400 and 590 mJ/cm². Microcracks at medium laser fluence of 1000 mJ/cm² are attributed to surface melting and solidification. Hydrodynamic ablation is proposed to explain the formation of micropores and networks at higher laser fluence of 1100 and 1200 mJ/cm². The darkening effect is explained in terms of trapping of light in the surface defects formed rather than anatase to rutile phase transformation as reported by others. Controlled darkening of TiO₂ film might be used for adjustable filters.     

Ultraviolet laser microstructuring of silicon and the effect of laser pulse duration on the surface morphology

The study of the laser pulse duration effect on the silicon micro-spikes morphology is presented. The microcones were produced by ultraviolet (248 nm) laser irradiation of doped Si wafers in SF₆ environment. The laser pulse duration was adjusted at 450 fs, 5 ps and 15 ns. We have analyzed the statistical nature of the spikes’ morphological characteristics, such as periodicity and apex angle by exploiting image processing techniques, on SEM images of the irradiated samples. The correlation of the quantitative morphological characteristics with the laser parameters (pulse duration, laser fluence and number of pulses) provides new insight on the physical mechanisms, which are involved on the formation of Si microcones.     

QCW diode-pumped 654 W AO Q-switched Nd:YAG rod oscillator-amplifier laser

A diode laser-pumped acoustic-optic Q-switched Nd:YAG master-oscillator power amplifier laser is presented. The laser is quasi continuously pumped at 1.1 kHz with a pulse width of 172 μs, and the ultrasonic frequency of the AO Q-switcher is set at a higher value (53 kHz). The master oscillator is designed as a thermally near-unstable-resonator, which presents an average output power of 48 W with a beam quality value of M² = 1.41 and a Q-switching pulse duration of 121 ns. The maximum average power of the MOPA system is 654 W, and the beam quality is M² = 6.