自组织量子点光致荧光的温度依赖性

自组织量子点光致荧光的温度依赖性研究,对于实现室温下高效的量子点光电器件有着非常重要的意义。而量子点中的载流子动力学过程将决定其光致荧光的温度依赖性。采用稳态速率方程模型模拟了自组织量子点中载流子动力学过程,并且考虑了量子点材料带隙随温度的变化;模拟了不同温度下自组织量子点的光致荧光光谱,并获得了光谱的积分强度、峰值能量及半峰全宽随温度的变化曲线。研究表明:模拟结果与已报道的实验数据符合得很好。由此可知,所采用的模型能够很好地反映自组织量子点中的载流子动力学过程。     

Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots

In this paper, we perform systematic calculations of the stress and strain distributions in InAs/GaAs truncated pyramidal quantum dots (QDs) with different wetting layer (WL) thickness, using the finite element method (FEM). The stresses and strains are concentrated at the boundaries of the WL and QDs, are reduced gradually from the boundaries to the interior, and tend to a uniform state for the positions away from the boundaries. The maximal strain energy density occurs at the vicinity of the interface between the WL and the substrate. The stresses, strains and released strain energy are reduced gradually with increasing WL thickness. The above results show that a critical WL thickness may exist, and the stress and strain distributions can make the growth of QDs a growth of strained three-dimensional island when the WL thickness is above the critical value, and FEM can be applied to investigate such nanosystems, QDs, and the relevant results are supported by the experiments.     

Sb/As intermixing in self-assembled GaSb/GaAs type II quantum dot systems and control of their photoluminescence spectra

The intermixing of Sb and As atoms induced by rapid thermal annealing (RTA) was investigated for type II GaSb/GaAs self-assembled quantum dots (QD) formed by molecular beam epitaxy growth. Just as in InAs/GaAs QD systems, the intermixing induces a remarkable blueshift of the photoluminescence (PL) peak of QDs and reduces the inhomogeneous broadening of PL peaks for both QD ensemble and wetting layer (WL) as consequences of the weakening of quantum confinement. Contrary to InAs/GaAs QDs systems, however, the intermixing has led to a pronounced exponential increase in PL intensity for GaSb QDs with annealing temperature up to 875 °C. By analyzing the temperature dependence of PL for QDs annealed at 700, 750 and 800 °C, activation energies of PL quenching from QDs at high temperatures are 176.4, 146 and 73.9 meV. The decrease of QD activation energy with annealing temperatures indicates the reduction of hole localization energy in type II QDs due to the Sb/As intermixing. The activation energy for the WL PL was found to drastically decrease when annealed at 800 °C where the QD PL intensity surpassed WL.     

Photoluminescence of InAs Self-Organized Quantum Dots Formation on InP Substrate by MOCVD

In this letter, we present results of photoluminescence (PL) emission from single-layer and multilayer InAs self-organized quantum dots (QDs), which were grown on (001) InP substrate. The room temperature PL peak of the single-layer QDs locates at 1608 nm, and full width at half-maximum (FWHM) of the PL peak is 71 meV. The PL peak of the multilayer QDs locates at 1478 nm, PL intensity of which is stronger than that of single-layer QDs. The single-layer QD PL spectra also display excited state emission and state filling as the excitation intensity is increased. Low temperature PL spectra show a weak peak between the peaks of QDs and wetting layer (WL), which suggests the recombination between electrons in the WL and holes in the dots.     

InAs Quantum Dots On (001) GaAs Substrate with two Groups of Different Sizes Under Arsenic Shutter Closed Condition

The effect of temperature on the self-assembled InAs quantum dots (QDs) grown on GaAs substrate under arsenic shutter closed condition has been studied. From atomic force microscopy (AFM), it was found that the size of InAs dots exhibited a transition from single-sized uniformly distributed quantum dot (QD) at a growth temperature of 490°C to two groups of different sizes QDs at 510°C. Since the desorption rate of In atoms from the substrate surface is very high at 510°C, a growth model is proposed that attributes the larger sized QDs to the enhanced capture of desorbed In atoms by a local random protrusion which initiates a regenerative capture and growth process and leads to explosive growth.     

载流子热迁移对自组织量子点光致荧光的影响

自组织量子点光致荧光的温度依赖性研究对实现高效的量子点光电器件有着非常重要的意义,而量子点中载流子的动力学过程会对量子点光致荧光产生直接影响。采用稳态速率方程模型,在考虑了自组织量子点中载流子热迁移的情况下,模拟获得了不同温度下自组织量子点的光致荧光光谱,并着重研究了三组具有不同基态能量的量子点的光致荧光强度随温度的变化。研究表明,随着温度升高,基态能量较高的量子点光致荧光强度减弱,而基态能量较低的量子点光致荧光强度则增强,当温度达到一定值时,所有量子点的光致荧光都将发生热猝灭。     

Modeling the formation kinetics of wedge-shaped germanium quantum dots on silicon

A mathematical model for calculating the dependences of the parameters of self-organized germanium quantum dots (QDs) on silicon on the conditions of growth in molecular beam epitaxy is described. The energies of formation for pyramidal and wedge-shaped islands in the Ge/Si(001) system are calculated with allowance for the contributions from surface energy and elastic stress relaxation, and the drop in the energy of attraction between atoms and the substrate.     

Photoluminescence quantum and surface states of excitons in ZnSe and CdS nanoclusters

The optical spectra of quantum dots (QDs) of CdS and ZnSe grown in borosilicate glass by the sol-gel method are obtained and analyzed. It is found that at concentrations of the two semiconductors x<0.06% the emission spectra are due to annihilation of free (internal) excitons in quantum states. The mean size of the quantum dots for a given concentration of ZnSe and CdS is calculated and found to be in good agreement with the X-ray data, and the exciton binding energy is calculated with allowance for the dielectric mismatch between the semiconductor and matrix. It is proposed that this mismatch may be the cause giving rise to the exciton percolation level that is observed in QD arrays for both systems at x>0.06%. The emission from the surface level of CdS QDs in the region ~2.7 eV, formed by the outer atoms with dangling bonds, is observed for the first time, as is the emission band from surface localized states. The relation between the position of the maximum of this band and the energy of the 1S state of the free exciton is established. It is shown that the properties of surface localized states are largely similar to the analogous properties of localized states of 3D (amorphous semiconductors, substitutional solid solutions of substitution) and 2D (quantum wells and superlattices) structures.     

Optimum Quantum Yield of the Light Emission from 2 to 10 nm Hydrosilylated Silicon Quantum Dots

Optimizing the light‐emitting efficiency of silicon quantum dots (Si QDs) has been recently intensified by the demand of the practical use of Si QDs in a variety of fields such as optoelectronics, photovoltaics, and bioimaging. It is imperative that an understanding of the optimum light‐emitting efficiency of Si QDs should be obtained to guide the design of the synthesis and processing of Si QDs. Here an investigation is presented on the characteristics of the photoluminescence (PL) from hydrosilylated Si QDs in a rather broad size region (≈2–10 nm), which enables an effective mass approximation model to be developed, which can very well describe the dependence of the PL energy on the QD size for Si QDs in the whole quantum‐confinement regime, and demonstrates that an optimum PL quantum yield (QY) appears at a specific QD size for Si QDs. The optimum PL QY results from the interplay between quantum‐confinement effect and surface effect. The current work has important implications for the surface engineering of Si QDs. To optimize the light‐emission efficiency of Si QDs, the surface of Si QDs must be engineered to minimize the formation of defects such as dangling bonds at the QD surface and build an energy barrier that can effectively prevent carriers in Si QDs from tunneling out.     

Wetting layers effect on InAs/GaAs quantum dots

FEM combining with the K·P theory is adopted to systematically investigate the effect of wetting layers on the strain-stress profiles and electronic structures of self-organized InAs quantum dot. Four different kinds of quantum dots are introduced at the same height and aspect ratio. We found that 0.5 nm wetting layer is an appropriate thickness for InAs/GaAs quantum dots. Strain shift down about 3%∼4.5% for the cases with WL (0.5 nm) and without WL in four shapes of quantum dots. For band edge energy, wetting layers expand the potential energy gap width. When WL thickness is more than 0.8 nm, the band edge energy profiles cannot vary regularly. The electron energy is affected while for heavy hole this impact on the energy is limited. Wetting layers for the influence of the electronic structure is obviously than the heavy hole. Consequently, the electron probability density function spread from buffer to wetting layer while the center of hole's function moves from QDs internal to wetting layer when introduce WLs. When WLs thickness is larger than 0.8 nm, the electronic structures of quantum dots have changed obviously. This will affect the instrument's performance which relies on the quantum dots' optical properties.     

不同巯基试剂修饰的CdTe量子点与BSA相互作用研究

修饰试剂对量子点的合成、性质具有重要的影响,但目前有关修饰试剂对量子点与蛋白质间相互作用的影响尚不清楚。采用紫外-可见吸收光谱、荧光光谱及红外光谱研究了3种巯基化合物(巯基乙酸,TGA;L-半胱氨酸,L-Cys;还原型谷胱甘肽,GSH)修饰的CdTe量子点与牛血清白蛋白(BSA)的相互作用。通过Stern-Volmer方程对数据进行了分析,得到了不同CdTe量子点与BSA相互作用过程的ΔHθ,ΔGθ和ΔSθ,并比较了CdTe量子点的不同修饰剂对BSA荧光猝灭的影响。研究结果表明,3种修饰试剂包覆的CdTe量子点与BSA的相互作用均为静态猝灭过程,猝灭常数KSV(L-Cys)KSV(TGA)≈KSV(GSH);TGA和L-Cys修饰的CdTe量子点与BSA的结合力主要为疏水作用力,而GSH修饰的量子点与其结合力既有氢键作用力又有疏水作用力;这些结果说明量子点与BSA的作用过程与量子点表面修饰试剂的类型有关。     

Sb-mediated growth of high-density InAs quantum dots and GaAsSb embedding growth by MBE

Self-assembled InAs quantum dots (QDs) with high-density were grown on GaAs(0 0 1) substrates by antimony (Sb)-mediated molecular beam epitaxy technique using GaAsSb/GaAs buffer layer and InAsSb wetting layer (WL). In this Sb-mediated growth, many two-dimensional (2D) small islands were formed on those WL surfaces. These 2D islands provide high step density and suppress surface migration. As the results, high-density InAs QDs were achieved, and photoluminescence (PL) intensity increased. Furthermore, by introducing GaAsSb capping layer (CL), higher PL intensity at room temperature was obtained as compared with that InGaAs CL.     

The influence of a continuum background on photoluminescence of self-assembled InAlAs/AlGaAs quantum dots

We have investigated the effect of the low energy tail of the continuum states associated with wetting layers (WL tail) on temperature dependence of the photoluminescence (PL) spectra of self-assembled InAlAs/AlGaAs quantum dots. We have developed a model that studies this effect. The results of this model suggest that the WL tail play an important role in the evolution according to the temperature of the PL spectra. We have also estimated that the capture into the QD ground state is via the WL tail.     

自组织量子点的量子态光学探测

半导体量子点主要包括在真空中外延生长的自组织量子点和在溶液中采用化学方法合成的胶体量子点,由于量子限制效应所导致的分立能级结构使得它们通常被称为“人工原子”。和自然原子不同,半导体量子点的能级结构强烈依赖于其尺寸和形状,这样就提供了更为灵活的方法来控制固体材料中的光与材料的相互作用。近年来,许多类原子的量子光学现象(包括量子干涉、Rabi振荡和Mollow荧光)都已经在单个的自组织量子点中揭示出来。与此形成对比的是,上述所有的类原子量子光学特性目前还没有在单个的胶体量子点中观察得到。在本文中,我们将侧重于介绍我们科研组以及我们和别的科研组合作对单个自组织量子点的单量子态在光学探测和相干控制方面完成的一系列工作。对单个的胶体量子点,我们认为量子相干特性的测量和控制将在新近合成的非荧光闪烁或荧光闪烁得到抑制的材料体系中得以实现.     

Misfit dislocations in nanocomposites with quantum dots,nanowires and their ensembles

We review theoretical concepts and experimental results on the physics of misfit dislocations in nanocomposite solids with quantum dots (QDs) and nanowires (quantum wires). Special attention is paid to thermodynamic theoretical models of formation of misfit dislocations in QDs and nanowires, including composite core–shell nanowires. The effects of misfit dislocations on the film growth mode during heteroepitaxy and phase transitions in QD systems are analysed. Experimental results and theoretical models of the ordered spatial arrangement of QDs growing on composite substrates with misfit dislocation networks are discussed. The influence of subsurface dislocations in composite substrates on the nucleation of QDs and nanowires on the substrate surface is considered. Models of misfit strain relaxation and dislocation formation in nanofilms on compliant substrates are also reviewed.     

EFFECT OF DOPANT ON THE UNIFORMITY OF InAs SELF-ORGANIZED QUANTUM DOTS

Low-temperature photoluminescence studies have been performed on Si-doped and Bedoped self-organized InAs/GaAs quantum dot(QD) samples to investigate the effect of doping. When Si or Be is doped into the sample,a remarkable decrease in line-width is observed. We relate this phenomenon to a model that takes the Si or Be atoms as the nucleation centers for the formation of QDs. When Si or Be is doped, more smalll uniform quantum dots are formed. The result will be of significance for the application of self-organized InAs quantum dots in semiconductor devices.     

自组织量子点的量子态光学探测(英文)

半导体量子点主要包括在真空中外延生长的自组织量子点和在溶液中采用化学方法合成的胶体量子点,由于量子限制效应所导致的分立能级结构使得它们通常被称为"人工原子"。和自然原子不同,半导体量子点的能级结构强烈依赖于其尺寸和形状,这样就提供了更为灵活的方法来控制固体材料中的光与材料的相互作用。近年来,许多类原子的量子光学现象(包括量子干涉、Rabi振荡和Mollow荧光)都已经在单个的自组织量子点中揭示出来。与此形成对比的是,上述所有的类原子量子光学特性目前还没有在单个的胶体量子点中观察得到。在本文中,我们将侧重于介绍我们科研组以及我们和别的科研组合作对单个自组织量子点的单量子态在光学探测和相干控制方面完成的一系列工作。对单个的胶体量子点,我们认为量子相干特性的测量和控制将在新近合成的非荧光闪烁或荧光闪烁得到抑制的材料体系中得以实现。     

Temperature dependence of photoluminescence from self-organized Ge quantum dots with large size and low density

Photoluminescence(PL) from self-organized Ge quantum dots(QDs) with large size and low density has been investigated over a temperature range from 10 to 300 K using continuous-wave(CW) optical excitation.The integrated PL intensity of QDs observed is negligible at about 10 K and rapidly increases with raising temperature up to 100 K.Through analyzing the PL experimental data of the QDs and wetting layer(WL),we provide direct evidence that there exists a potential barrier,arising from the greater compressive...     

Synthesis and Adsorption Study of BSA Surface Imprinted Polymer on CdS Quantum Dots

开发了CdS量子点用于牛血清白蛋白(BSA)表面压印的方法,将CdS量子点掺杂进BSA的分子压印聚合物中. 实验过程中对制备条件和吸附条件进行了优化. 量子点(QDs)和量子点分子压印聚合物(QDs-MIP)的形貌用扫描电子显微镜进行了表征. 当该QDs-MIP重新结合模板分子BSA时,CdS量子点的荧光被淬灭. 荧光淬灭的原因可能是量子点与模板蛋白质分子之间的荧光共振能量转移. 该聚合物对压印分子的吸附为单分子层吸附,符合Langmuir等温吸附模型. 化学吸附为速率控制步骤. 该新型聚合物的最大吸附容量可达226.0 mg/g,比未掺杂量子点的BSA压印聚合物提高142.4 mg/g.     

Pressure coefficients of the photoluminescence of the II–VI semiconducting quantum dots grown by molecular beam epitaxy

Luminescence properties of CdTe and CdSe quantum dots have been studied under high hydrostatic pressure. The luminescence pressure coefficients of the II–VI quantum dots appear to be very similar to the pressure coefficients of the band-gap of bulk CdTe and CdSe, respectively. In contrary to that, the luminescence pressure coefficients of the III–V quantum dots are significantly lower than pressure coefficients of energy gaps of the appropriate dot materials. The discrepancy can be explained by the theoretical model, which takes into account effects of strain on pressure coefficients in thin strained layers. The experimentally observed pressure-induced quenching of the QDs luminescence is attributed to the “zinc-blende–cinnabar” phase transition in CdTe QDs and to the “zinc-blende–rock-salt” phase transition in CdSe QDs.