Effect of deposition temperature on orientation and electrical properties of (K0.5Na0.5)NbO3 thin films by pulsed laser deposition

Lead-free ferroelectric K_0.5Na_0.5NbO₃ (KNN) thin films have been prepared on Pt/TiO₂/SiO₂/Si substrates by pulsed laser deposition process. The structures, crystal orientations and electrical properties of thin films have been investigated as a function of deposition temperature from 680 °C to 760 °C. It is found that the deposition temperature plays an important role in the structures, crystal orientations and electrical properties of thin films. The crystallization of thin films improves with increasing deposition temperature. The thin film deposited at 760 °C exhibits strong (0 0 1) preferential orientation, large dielectric constant of 930 and the remnant polarization of 8.54 μC/cm².     

Influence of epitaxial growth on phase competition in Pr0.5Sr0.5MnO3 films

A series of Pr_0.5Sr_0.5MnO₃ (PSMO) films with various thickness were epitaxially grown on substrates of (0 0 1)-oriented (LaAlO₃)_0.3(SrAl_0.5Ta_0.5O₃)_0.7 (LSAT), LaAlO₃ (LAO) and SrTiO₃ (STO), and (0 1 1)-oriented STO using pulse laser deposition. Influence of epitaxial growth on phase competition was investigated. A ferromagnetic metal to antiferromagnetic insulator (FMM-AFI) transition upon cooling is present in both largely compressed situations deposited on LAO (0 0 1) and tensile cases deposited on STO (0 0 1) but absent in little strained films grown on LSAT (0 0 1), indicating that the antiferromagnetic insulating state is favored by strains. On the other hand, the 400 nm films deposited on (0 1 1)-oriented STO as well as LAO substrates show FMM-AFI transition. These results reveal that both the orientation of epitaxial growth and substrate-induced strain affect the FMM-AFI transition.     

Lead-free ferroelectric BaTiO3 doped-(Na0.5Bi0.5)TiO3 thin films processed by pulsed laser deposition technique

The difficulties in synthesizing phase pure BaTiO₃ doped-(Na_0.5Bi_0.5)TiO₃ are known. In this work, we reporting the optimized pulsed laser deposition (PLD) conditions for obtaining pure phase 0.92(Na_0.5Bi_0.5)TiO₃-0.08BaTiO₃, (BNT-BT_0.08), thin films. Dielectric, ferroelectric and piezoelectric properties of BNT-BT_0.08, thin films deposited by PLD on Pt/TiO₂/SiO₂/Si substrates are investigated in this paper. Perovskite structure of BNT-BT_0.08 thin films with random orientation of nanocrystallites has been obtained by deposition at 600 °C. The relative dielectric constant and loss tangent at 100 kHz, of BNT-BT_0.08 thin film with 530 nm thickness, were 820 and 0.13, respectively. Ferroelectric hysteresis measurements indicated a remnant polarization value of 22 μC/cm² and a coercive field of 120 kV/cm. The piezoresponse force microscopy (PFM) data showed that most of the grains seem to be constituted of single ferroelectric domain. The as-deposited BNT-BT_0.08 thin film is ferroelectric at the nanoscale level and piezoelectric.     

Research on charge-ordering state in La0.5Sr0.5MnO2.88 and La0.5Sr0.5Mn0.5Ti0.5O3 systems

The structural, magnetic and transport properties of La_0.5Sr_0.5MnO_2.88 and La_0.5Sr_0.5Mn_0.5Ti_0.5O₃ samples have been investigated systematically. Indeed, this series has been considered to understand the influence of physical parameters such as oxygen deficiency and titanium doping effect in undoped La_0.5Sr_0.5MnO₃ sample. Ceramic material based on La_0.5Sr_0.5MnO_2.88 exhibits interesting behaviours of charge-ordering (CO), ferromagnetic (FM) states and a good conductivity down to the lowest temperatures. The substitution of Ti for Mn destroyed drastically the CO, damaged the motion of itinerant e_g electrons and changed the local parameters of perovskite cell. A change of the structure from tetragonal to rhombohedral symmetry is observed causing a weakening of double-exchange interaction. The experiment results show that the suppression of the CO is sensitive to the variety of Mn³⁺/Mn⁴⁺ ratio. In a field of 8 T at 10 K, FM and CO phase can be evaluated to be ∼20:80 according to the μ_exp/μ_cal ratio for La_0.5Sr_0.5MnO_2.88, whereas the CO state is suppressed for La_0.5Sr_0.5Mn_0.5Ti_0.5O₃ sample, FM and anti-ferromagnetic (AFM) phase are coexisted and evaluated to be ∼54:46, respectively.     

Piezoelectric non-linearity in PbSc0.5Ta0.5O3 thin films

Epitaxial (001)-oriented PbSc_0.5Ta_0.5O₃ (PST) thin films were deposited by pulsed laser deposition. Local piezoelectric investigations performed by piezoelectric force microscopy show a dual slope for the piezoelectric coefficient. A piezoelectric coefficient of 3 pm/V was observed at voltages up to 0.8 V. However, at voltages above 0.8 V, there is a steep increase in piezoelectric coefficient mounting to 23.2 pm/V. This nonlinear piezoelectric response was observed to be irreversible in nature. In order to better understand this nonlinear behavior, voltage dependent dielectric constant measurements were performed. These confirmed that the piezoelectric non-linearity is indeed a manifestation of a dielectric non-linearity. In contrast to classical ferroelectric systems, the observed dielectric non-linearity in this relaxor material cannot be explained by the Rayleigh model. Thus the dielectric non-linearity in the PST films is tentatively explained as a manifestation of a percolation of the polar nano regions.     

Preparation of LiNi0.5Mn0.5O2 cathode materials by urea hydrolysis coprecipitation

Layered LiNi_0.5Mn_0.5O₂ has been successfully synthesized via urea hydrolysis coprecipitation method. Well-crystallized LiNi_0.5Mn_0.5O₂ was obtained after calcinations of coprecipitation precursors and lithium salts at 450 °C for 3 h and following 900 °C for 10 h in air. Both the precursors and LiNi_0.5Mn_0.5O₂ powders show an agglomerated secondary structure with crystalline particles inside. The quasi-spherical morphology of the precursors was maintained during the calcinations. The first charge and discharge capacities of as-prepared LiNi_0.5Mn_0.5O₂ were 200 and 165mAh/g respectively. The discharge capacity of about 160mAh/g was retained after 10cycles for as-prepared samples.     

Na0.5K0.5NbO3-BiFeO3 lead-free piezoelectric ceramics

Lead-free (Na_0.5K_0.5)NbO₃-based piezoelectric ceramics were successfully fabricated by substituting with a small amount of BiFeO₃ (BF). Difficulty in sintering of pure NKN ceramics can be eased by adding a few molar percent of BF, and the crystalline structure is also changed, leading to a morphotropic phase boundary (MPB) between ferroelectric orthorhombic and rhombohedral phases. The MPB exists near the 1-2 mol% BF-substituted NKN compositions, exhibiting enhanced ferroelectric, piezoelectric, and electromechanical properties of P_r=23.3 μC/cm², d₃₃=185 pC/N, and k_p=46%, compared to an ordinarily sintered pure NKN ceramics. The MPB composition has a Curie temperature of ∼370 °C, comparable to that of some commercial PZT materials.     

Asymmetric electrical properties in Pt/Ba0.5Sr0.5Ti0.99Co0.01O3/Nb-doped SrTiO3 capacitors

Ba_0.5Sr_0.5Ti_0.99Co_0.01O₃ (BSTC) thin films have been fabricated with pulsed laser deposition on Nb-doped SrTiO₃ (STN) substrate. In Pt/BSTC/STN capacitor, we systematically investigated the capacitance, leakage current and polarization versus bias voltage characteristics, and found that curves of capacitance versus voltage and leakage current versus voltage were not symmetric, and polarization hysteresis loop exhibited large relaxation of the remnant polarization at negatively poled state. A detailed analysis of capacitance data demonstrated a difference of the built-in voltage between top Pt/BSTC interface (V_b,t=2.5 V) and bottom BSTC/STN interface (V_b,b=1.1 V). Such different built-in voltages lead to the presence of an internal electric field, which results in asymmetric electric characteristics in Pt/BSTC/STN capacitor.     

Molten salt synthesis of Li1 + x (Ni0.5Mn0.5)1 − xO2 as cathode material for Li-ion batteries

Li_1 + x(Ni_0.5Mn_0.5)_1 − xO₂ cathode material for Li-ion batteries has been prepared by a molten salt method using Li₂CO₃ salt. The influences of synthetic temperature and time have been intensively investigated. It is easy to obtain materials with a hexagonal α-NaFeO₂ structure except broad peaks between 20° and 25°. Nickel in Li_1 + x(Ni_0.5Mn_0.5)_1 − xO₂ is oxidized to a trivalent state while manganese maintained a tetravalent state. It is found that the discharge capacities of all samples increase with cycling. The sample prepared at 850 °C for 5 h has a discharge capacity of 130 mAh g^− 1 between 2.5 and 4.5 V versus V_Li+/Li at a specific current of 0.13 mA cm^− 2 after 50 cycles at 25 °C.     

Characterization of lead free (K0.5Na0.5)NbO3-LiSbO3 piezoceramic

(K_0.5Na_0.5)NbO₃ (KNN) based lead free ceramics have been fabricated by a solid state reaction. In this work, LiSbO₃ (LS) modified KNN based ceramics were sintered at atmospheric pressure and high density (>96% theoretical) was obtained. The detailed elastic, dielectric, piezoelectric and electromechanical properties were characterized by using the resonance technique combined with the ultrasonic method. The full set of material constants for the obtained polycrystalline ceramics were determined and compared to the pure hot pressed KNN counterpart. KNN-LS polycrystalline ceramic was found to have higher elastic compliance, dielectric permittivity and piezoelectric strain coefficients, but lower mechanical quality factor, when compared to pure KNN, exhibiting a “softening” behavior. However, a high coercive field (∼17 kV/cm) was found for the LS modified KNN material. The properties as a function of temperature were determined in the range of −50-250 ^°C, showing a polymorphic phase transition near room temperature, giving rise to improved piezoelectric behavior.     

Magnetotransport properties of epitaxial Pr0.5Ca0.5MnO3 films grown by a solution technique

Epitaxial Pr_0.5Ca_0.5MnO₃ films have been synthesized on (0 0 1) SrTiO₃ substrate using a chemical solution deposition technique and two-step post-annealing process. The zero field resistivity of the films shows semiconducting behavior and a characteristic of charge ordering is observed at 230 K. The resistivity of the 10 nm film did not show any effect with the magnetic field. However, melting of charge ordering was observed for the 120 nm film at an applied magnetic field of 4 T. Large decrease in the resistivity of the 120 nm film (<100 K) resulted in magnetoresistance of nearly −100% at 75 K.     

Annealing effects on structural, optical and electrical properties of e-beam evaporated CuIn0.5Ga0.5Te2 thin films

CuIn_0.5Ga_0.5Te₂ (CIGT) thin films have been prepared by e-beam evaporation from a single crystal powder synthesized by direct reaction of constituent elements in a stoichiometric proportion. Post-depositional annealing has been carried out at 300 and 350 °C. The compositions of the films were determined by energy dispersive X-ray analysis (EDXA) and it was found that there was a remarkable fluctuation in atomic percentage of the constituent elements following to the post-depositional annealing. X-ray diffraction analysis (XRD) has shown that as-grown films were amorphous in nature and turned into polycrystalline structure following to the annealing at 300 °C. The main peaks of CuIn_0.5Ga_0.5Te₂ and some minor peaks belonged to a binary phase Cu₂Te appeared after annealing at 300 °C, whereas for the films annealed at 350 °C single phase of the CuIn_0.5Ga_0.5Te₂ chalcopyrite structure was observed with the preferred orientation along the (1 1 2) plane. The effect of annealing on and near surface regions has been studied using X-ray photoelectron spectroscopy (XPS). The results indicated that there was a considerable variation in surface composition following to the annealing process. The transmission and reflection measurements have been carried out in the wavelength range of 200-1100 nm. The absorption coefficients of the films were found to be in the order of 10⁴ cm⁻¹ and optical band gaps were determined as 1.39, 1.43 and 1.47 eV for as-grown and films annealed at 300 and 350 °C, respectively. The temperature dependent conductivity and photoconductivity measurements have been performed in the temperature range of −73 to 157 °C and the room temperature resistivities were found to be around 3.4 × 10⁷ and 9.6 × 10⁶ (Ω cm) for the as-grown and annealed films at 350 °C, respectively.     

Intricacies of strain and magnetic field induced charge order melting in Pr0.5Ca0.5MnO3 thin films

Thin films of the half-doped manganite Pr_0.5Ca_0.5MnO₃ were grown on (1 0 0) oriented MgO substrates by pulsed laser deposition technique. In order to study the effect of strain on the magnetic field induced charge order melting, films of different thicknesses were prepared and their properties were studied by X-ray diffraction, electrical resistivity and magnetoresistance measurements. A field induced charge order melting is observed for films with very small thicknesses. The charge order transition temperature and the magnetic field induced charge order melting are observed to depend on the nature of strain that is experienced by the film.     

High repetition rate mid-infrared generation with singly resonant optical parametric oscillator using multi-grating periodically poled MgO:LiNbO3

A high repetition rate mid-infrared singly resonant optical parametric oscillator (OPO) using MgO-doped multi-grating periodically poled LiNbO₃ (MgO:PPLN) is demonstrated. A 1064 nm Q-switched Nd:YVO₄ laser at 10 kHz repetition rate and pulse width of 17.8 ns was used to pump the OPO. The period of the quasi-phase matched (QPM) grating in the multi-grating MgO:PPLN chip varied from 25.5 to 31.5 μm in steps of 0.5 μm. This corresponds to the generation of a signal beam from 1.37 to 1.64 μm and an idler beam from 3.0 to 4.8 μm, respectively. A maximum signal power of 250 mW and idler power of 140 mW has been obtained with an input pump beam of power 1.92 W, for a grating period of 30.5 μm. A maximum optic-optic conversion efficiency of 20% and 7.4% in the idler has been observed. It has been observed that the output power increases as the period of the grating increases.     

Post-sintering annealing effect on the diffuse phase transition in (Pb1−xBax)(Yb0.5Ta0.5)O3 ceramics

The effect of post sintering annealing on the dielectric response of (Pb_1−xBa_x)(Yb_0.5Ta_0.5)O₃ ceramics in the diffuse phase transition range (x=0.2) has been investigated. The samples are prepared by conventional solid-state reaction method. The samples are sintered at 1300 °C for 2 h and annealed at different temperatures (800, 900 and 1000 °C) for 8 h and at 800 °C for different time durations (8, 12 and 24 h). A significant change in the dielectric response has been observed in all the samples. The dielectric constant increases remarkably and the dielectric loss tangent decreases. The dielectric peaks of the annealed samples are observed to be more diffused with noticeable frequency dispersion compared to the as sintered sample.     

Comparative study of K0.5Bi0.5TiO3 nanoparticles derived from sol-gel-hydrothermal and sol-gel routes

A kind of novel lead-free ferroelectrics, potassium bismuth titanate, K_0.5Bi_0.5TiO₃ (KBT), has been prepared by sol-gel-hydrothermal and sol-gel routes, respectively, and the structural characters of as-synthesized powders were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The results indicated that sol-gel-hydrothermal route led to the formation of KBT nanowhiskers with diameters of 20 nm and lengths of 1 μm, and the processing temperature was as low as 160 °C, but the normal sol-gel route tended to form KBT cubic particles of about 100-200 nm, and the processing temperature was higher than 700 °C. It is believed that the gel precursor and hydrothermal environment play an important role in the formation of the nanowhiskers at low temperature. Due to the good sinterability of nanowhiskers, the ferroelectric and dielectric properties of KBT ceramics prepared by sol-gel-hydrothermal route were super to that prepared by sol-gel route.     

NbTi0.5Ni0.5O4 as anode compound material for SOFCs

NbTi_0.5Ni_0.5O₄ (NTNO) has been prepared using solid state synthesis and investigated as a potential anode material. The oxide form of NTNO has single phase rutile-type structure with tetragonal (P42/mnm) space group. The reduced form is a composite of nano-scaled particles of metallic Ni and Nb_1.33Ti_0.67O₄ phase. Reduced NTNO showed high electronic conductivity up to 280 S.cm^− 1 at 900 °C in reducing atmosphere, but suffers from low CTE equal to 3.78 10^− 6 K^− 1. Studies of NTNO as anode material were carried out in a three electrode - electrochemical half cell configuration under pure humidified H₂ at 900 °C using a 2 mm thick zirconia electrolyte and without any additional current collector material. The results show a reasonable series resistance (R_s) equal to 2.7 Ωcm² (about 50% higher than for metallic gold layers) indicating a good current collection performance for a 10 μm layer of material. The polarization resistance (R_p) was equal to 33 Ωcm² and is attributed to a poor density of three phase boundaries (TPB) and shortage of oxide ion conduction in the anode layer. The results show the potential of NTNO as an anode material, especially after optimization of the microstructure towards the increase of TPB length.     

Impacts of compressive strain on phase diagram of epitaxial Pr0.5Sr0.5MnO3 films grown on LaAlO3 (0 0 1)

Series Pr_0.5Sr_0.5MnO₃ (PSMO) films of thickness ranging from 20 to 400 nm were epitaxially grown on (0 0 1)-oriented LaAlO₃ using pulsed laser deposition method. The biaxial compressive strain effect on phase transition of the films was systematically investigated by both electrical and magnetic measurements. The 60 nm film shows a ferromagnetic metal to antiferromagnetic insulator (FMM-AFI) transition at a temperature of ∼190 K. Such a FMM-AFI transition is depressed as the films become thicker, and finally disappears in the strain-relaxed situation. On the other hand, the Curie temperature is remarkably enhanced (∼50 °C) when the film thickness increases from 60 to 400 nm. These results may yield the possibility to modulate the phase transitions by varying the structural strain.     

Growth of superconducting FeSe0.5Te0.5 thin films by pulsed-laser deposition

FeSe_0.5Te_0.5 thin films with PbO-type structure are successfully grown on MgO(1 0 0) and LaSrAlO₄(0 0 1) substrates from FeSe_0.5Te_0.5 or FeSe_0.5Te_0.75 polycrystalline targets by pulsed-laser deposition. The film deposited on the MgO substrate (film thickness ∼ 55 nm) shows superconductivity at 10.6 K (onset) and 9.2 K (zero resistivity). On the other hand, the film deposited on the LaSrAlO₄ substrate (film thickness ∼ 250 nm) exhibits superconductivity at 5.4 K (onset) and 2.7 K (zero resistivity). This suggests the strong influence of substrate materials and/or the c-axis length to superconducting properties of FeSe_0.5Te_0.5 thin films.     

Synthesis and surface modified hard magnetic properties in Co0.5Pt0.5 nanocrystallites from a rheological liquid precursor

Small crystallites of a metastable phase Co_0.5Pt_0.5 are precipitated by heating a rheological liquid precursor of cobalt–hydrazine complex and platinum chloride H₂PtCl₆·xH₂O in polymer molecules of poly(vinylpyrrolidone) (PVP) in ethylene glycol. The hydrazine co-reduces nascent atoms from the Co²⁺ and Pt⁴⁺ that recombine and grow as Co_0.5Pt_0.5. The PVP molecules cap a growing Co_0.5Pt_0.5 as it achieves a critical size so that it stops growing further in given conditions. X-ray diffraction pattern of a recovered powder reveals a crystalline Co_0.5Pt_0.5 phase (average crystallite size D∼8 nm) of a well-known Fm3m-fcc crystal structure with the lattice parameter a=0.3916 nm (density ρ=14.09 g/cm³). A more ordered L1₀ phase (ρ=15.91 g/cm³) transforms (D≥25 nm) upon annealing the powder at temperature lesser than 700 °C (in vacuum). At room temperature, the virgin crystallites bear only a small saturation magnetization M_s=5.54 emu/g (D=8 nm) of a soft magnet and it hardly grows on bigger sizes (D≤31 nm) in a canted ferromagnetic structure. A rectangular hysteresis loop is markedly expanded on an optimally annealed L1₀ phase at 800 °C for 60 min, showing a surface modified coercivity H_c=7.781 kOe with remnant ratio M_r/M_s=0.5564, and M_s=39.75 emu/g. Crystallites self-assembled in an acicular shape tailor large H_c from ideal single domains and high magnetocrystalline anisotropy of a hard magnet L1₀ phase.