Surface morphology of metal films deposited on mica at various temperatures observed by atomic force microscopy

Thin films of eight metals with a thickness of 150 nm were deposited on mica substrates by thermal evaporation at various temperatures in a high vacuum. The surface morphology of the metal films was observed by atomic force microscopy (AFM) and the images were characterized quantitatively by a roughness analysis and a bearing analysis (surface height analysis). The films of Au, Ag, Cu, and Al with the high melting points were prepared at homologous temperatures T/T_m = 0.22-0.32, 0.40, and 0.56. The films of In, Sn, Bi, and Pb with the low melting points were prepared at T/T_m = 0.55-0.70, where T and T_m are the absolute temperatures of the mica substrate and the melting point of the metal, respectively. The surface morphology of these metal films was studied based on a structure zone model. The film surfaces of Au, Ag, and Cu prepared at the low temperatures (T/T_m = 0.22-0.24) consist of small round grains with diameters of 30-60 nm and heights of 2-7 nm. The surface heights of these metal films distribute randomly around the surface height at 0 nm and the morphology is caused by self-shadowing during the deposition. The grain size becomes large due to surface diffusion of adatoms and the film surfaces have individual characteristic morphology and roughnesses as T increases. The surface of the Al film becomes very smooth as T increases and the atomically smooth surface is obtained at T/T_m = 0.56-0.67 (250-350 °C). On the other hand, the atomically smooth surface of the Au film is obtained at T/T_m = 0.56 (473 ± 3 °C). The films of In, Sn, Bi, and Pb prepared at T/T_m = 0.55-0.70 also show the individual characteristic surface morphology.     

Influence of substrate temperature in BiFeO3-CoFe2O4 nanocomposites deposited on SrTiO3 (0 0 1)

BiFeO₃-CoFe₂O₄ epitaxial nanocomposites have been deposited on SrTiO₃ (0 0 1) substrates by pulsed laser deposition. We present here a study of the influence of the deposition temperature (T_S), in the 550-800 °C range, on the film composition, morphology and microstructure. Electron-probe microanalysis shows strong reduction of the Bi content in the films when increasing T_S. Films prepared at T_S=750 °C and above are virtually Bi-free. X-ray diffraction (XRD) data show that, due to the volatility of Bi, there is a progressive reduction in the amount of BiFeO₃. The deposition temperature and the concomitant presence of Fe_xO_y spurious phases in the nanocomposites grown at high temperature promote radical changes in film morphology and magnetization. It thus follows that a temperature range suitable for controlled modification of nanocomposites morphology would be extremely narrow.     

Angular dependence of coercivity and remanence of Ni nanowire arrays and its relevance to magnetoviscosity

Ni nanowire arrays with varying wire dimensions (diameter d, length l) and center-to-center distances d_CC were synthesized by pulsed electrodeposition of Ni in porous Al templates. The magnetization-reversal behavior of the arrays was investigated by means of magnetometry for different angles θ between the wire axes and the applied magnetic field. The functional dependences of the characteristic parameters coercivity H_C(θ) and reduced remanence m_R/m_S(θ) exhibit a strong dependence on the wire dimensions and the center-to-center distance. For instance, for nanowire arrays with d=40 nm, d_CC=100 nm, and for θ=0°, the coercivity takes on a rather large value of μ₀H_C=85 mT and m_R/m_S≅94%; reducing d_CC to 30 nm and d to 17 nm results in μ₀H_C=49 mT and m_R/m_S≅57%, an observation which suggests an increasing magnetostatic interwire interaction at increased (d/d_CC)-ratio. The potential application of nanowires as the constituents of ferrofluids is discussed.     

Predominant factors affecting the dielectric and piezoelectric properties of bismuth-containing complex perovskite solid solution

To study the factors affecting the dielectric and piezoelectric properties of bismuth-containing complex perovskites, the solid solution (1−x)Pb(Mg_1/3Nb_2/3)O₃-xBi(Mg_2/3Nb_1/3)O₃ was prepared by the solid state reaction method and its dielectric and piezoelectric properties were investigated. It is found that (1) at room temperature, the nonlinearity of the DE-loop for Pb(Mg_1/3Nb_2/3)O₃ is completely suppressed at a rather low x (<5%); (2) dielectric constant versus temperature curves deviate from the Curie-Weiss law at a temperature T_d much higher than the dielectric constant peak temperature T_m and T_m−T_d decreases considerably with increasing x; and (3) frequency dispersion ΔT_m=T_m (1 MHz)−T_m (10 kHz) increases with increasing x. Possible factors responsible for the variation of the dielectric and piezoelectric properties with x are discussed.     

Structural and electrical characterization of SxSe100−x thin films

Thin films of samples of the glassy S_xSe_100−x system with 0 ≤ x ≤ 7.28 have been prepared by thermal evaporation technique at room temperature (300 K). X-ray investigations show that the structure of pure selenium (Se) does change seriously by the addition of small amount of sulphur S ≤7.28%. The lattice parameters were determined as a function of sulphur content. Results of differential thermal analysis (DTA) of the glassy compositions of the system S_xSe_100−x were discussed. The characteristic temperatures (T_g, T_c and T_m) were evaluated. Dark electrical resistivities, ρ, of S_xSe_100−x thin films with different thicknesses from 100 to 500 nm, were measured in the temperature range from 300 to 423 K. Two distinct linear parts with different activation energies were observed. The variation of electrical resistivity of examined compositions has been discussed as a function of the film thickness, temperature and the sulphur content. The application of Mott model for the phonon assisted hopping of small polarons gave the same two activation energies obtained from the resistivity temperature calculations.     

Surface properties of liquid In-Zn alloys

The measurements of surface tension and density of zinc, indium and liquid In-Zn alloys containing 0.9, 0.85, 0.75, 0.70, 0.60, 0.40, 0.25 and 0.10 mole fraction of In were carried out using the method of maximum pressure in gaseous bubbles (MBP) as well as dilatometric technique. The technique of sessile drop was additionally applied in the measurements of surface tension for pure indium and zinc. The measurements were performed at temperature range 474-1151 K. The isotherms of surface tension calculated based on Butler's equation at 700 and 1100 K corresponded well with the experimental values for zinc content lower than 0.6 mole fraction. The surface tension calculated for alloys of higher zinc concentrations (0.6 < X_Zn < 0.95) had a positive value of the surface tension temperature coefficient (dσ/dT), which did not coincide with the experimental results. The density as well as molar volume of liquid In-Zn alloys showed almost identical behaviour like the ideal solutions. The observed little deviations were contained within assessed experimental errors.     

Synthesis and physical characterization of superconductivity-magnetism crossover compound RuSr2EuCeCu2O10−δ

We carefully studied the nonsuperconducting sample of the magneto-superconducting RuSr₂(Eu_1−xCe_x)Cu₂O_10−δ series with composition RuSr₂EuCeCu₂O_10−δ. This compound seems to exhibit a complex magnetic state as revealed by host of techniques like resistivity, thermopower, magnetic susceptibility, and MR measurements. The studied compound exhibited ferromagnetic like M(H) loops at 5, 20, and 50 K, and semiconductor like electrical conduction down to 5 K, with −MR^7 T of up to 4% at low temperatures. The −MR^7 T decreases fast above 150 K and monotonically becomes close to zero above say 230 K. Below, 150 K −MR^7 T decreases to around 3% monotonically down to 75 K, with further increase to 4% at around 30 K and lastly having a slight decrease below this temperature. The thermopower S(T) behavior closely followed the −MR^7 T steps in terms of d(S/T)/dT slopes. Further, both MR^7 T steps and d(S/T)/dT slopes are found in close vicinity to various magnetic ordering temperatures (T_mag) of this compound.     

High pressure behaviour of KHSO4 studied by electrical impedance spectroscopy

Measurements of the electrical conductivity were performed in KHSO₄ at pressures between 0.5 and 2.5 GPa and in the temperature range 120-350 °C by the use of the impedance spectroscopy. The temperatures of the α-β phase transition (T_Tr) and of the melting (T_m), determined from the Arrhenius plots ln(σT) vs. 1/T, increase with pressure up to 1.5 GPa having dT/dP∼+45 K/GPa. Above the pressure 1.5 GPa, the pressure dependencies of T_Tr and T_m are negative dT/dP∼−45 K/GPa. At pressures above 0.5 GPa, the reversible decomposition of KHSO₄ into K₃H(SO₄)₂+H₂SO₄ (and probably into K₅H₃(SO₄)₄+H₂SO₄) affects the electrical conductivity of KHSO₄, with the typical values of the protonic electrical conductivity, c. 10⁻¹ S/cm at 2.5 GPa.     

Interdiffusion of adsorbed Pb and Bi on Cu(1 0 0)

The impingement and interdiffusion of adsorbed Pb and Bi layers spreading from separated 3D pure bulk sources on Cu(1 0 0) has been studied, at T = 513 K, by in situ scanning Auger microscopy. When the leading edges of the pure Pb and Bi diffusion profiles impinge, they both consist of low-coverage lattice gas surface alloyed phases. In these low-coverage phases, Pb displaces surface alloyed Bi and the point of intersection of the profiles drifts towards the Bi source. These features lead to the conclusion that Pb atoms are more strongly bound at surface alloyed sites in Cu(1 0 0) than Bi atoms. Once the total coverage (Pb + Bi) on the substrate reaches about one monolayer, Pb and Bi are dealloyed from the substrate, and the interdiffusion profiles become essentially symmetric. Pb and Bi mix in all proportions, with an interdiffusion coefficient of ∼10⁻¹³ m²/s. This is considerably smaller than the self-diffusion coefficients previously observed for pure Pb and Bi in their respective high-coverage phases, indicating that the mechanism of interdiffusion is different from that of self-diffusion. As interdiffusion proceeds, the point of intersection of the Pb and Bi profiles reverses its drift direction, leading to the conclusion that binding of Bi atoms to the Cu(1 0 0) substrate is stronger than that of Pb atoms in the highest-coverage surface dealloyed layers.     

A possible role of the surface free enthalpy excess of solid chemical elements in their melting and critical temperature

A 5–20% increase in the average number of neighbors of an atom (n_avrg) in the surface phase between 0 K and melting temperature T_m makes the solid surface “geometrically impossible” to exist at some temperature called the melting temperature. The latter results in the collapse of crystal structure, beginning with the formation of surface layers of liquid a few atoms thick, in agreement with recently published studies. The critical temperature of solid chemical elements is also discussed. The derivation yields expressions for the heat of melting (ΔH_m), entropy of melting (ΔS_m), melting temperature (T_m) and critical temperature (T_c) in case of pure metals.     

Room temperature transparent conducting oxides based on zinc oxide thin films

Doped zinc oxide thin films are grown on glass substrate at room temperature under oxygen atmosphere, using pulsed laser deposition (PLD). O₂ pressure below 1 Pa leads to conductive films. A careful characterization of the film stoichiometry and microstructure using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) concludes on a decrease in crystallinity with Al and Ga additions (≤3%). The progressive loss of the (0 0 2) orientation is associated with a variation of the c parameter value as a function of the film thickness and substrate nature. ZnO:Al and ZnO:Ga thin films show a high optical transmittance (>80%) with an increase in band gap from 3.27 eV (pure ZnO) to 3.88 eV and 3.61 eV for Al and Ga doping, respectively. Optical carrier concentration, optical mobility and optical resistivity are deduced from simulation of the optical data.     

Experimental determination of solid-liquid interfacial energy for solid Sn in the Sn-Mg system

The equilibrated grain boundary groove shapes for solid Sn in equilibrium with the Sn-9 at.% Mg eutectic liquid were directly observed annealing a sample at the eutectic temperature for about 5 days with a radial heat flow apparatus. The thermal conductivities of the solid phase, κ_S, and the liquid phase, κ_L, for the groove shapes were measured. From the observed grain boundary groove shapes, the Gibbs-Thomson coefficient, the solid-liquid interfacial energy and grain boundary energy for solid Sn in equilibrium with the Sn-9 at.% Mg eutectic liquid have been determined to be (7.35 ± 0.36) × 10⁻⁸ Km, (136.41 ± 13.64) × 10⁻³ J m⁻² and (230.95 ± 25.40) × 10⁻³ J m⁻², respectively.     

Magnetic properties and room-temperature magnetocaloric effect in the doped antipervoskite compounds Ga1−xAlxCMn3 (0≤x≤0.15)

We report the effects of Al doping on the structure, magnetic properties, and magnetocaloric effect of antiperovskite compounds Ga_1−xAl_xCMn₃ (0≤x≤0.15). Partial substitutions of Al for Ga enhance the Curie temperature (from 250 K for x=0.0 to 312 K for x=0.15) and the saturation magnetization. On increasing the doping level x, the maximum values of the magnetic entropy change (−ΔS_M) decreases while the temperature span of −ΔS_M vs. T plot broadens. Furthermore, the relative cooling power (RCP) is also studied. For 20 kOe, the RCP value tends to saturate at a high doping level (for x=0.12, 119 J/kg at 296 K). However, at 45 kOe, the RCP value increases quickly with increasing x (for x=0.15, 293 J/kg at 312 K). Considering the relatively large RCP and inexpensive raw materials, Ga_1−xAl_xCMn₃ may be alternative candidates for room-temperature magnetic refrigeration.     

Anisotropy of second-order nonlinear optical susceptibilities of arsenic triiodide-sulfur addition complex: AsI3 · 3S8

We report the anisotropic linear and second-order nonlinear optical (NLO) properties of arsenic triiodide-octa-sulfur (1:3) adduct, AsI₃ · 3S₈, which spontaneously crystallizes in the trigonal rhombohedral non-centrosymmetric space group R3m. The trigonal symmetry of the AsI₃ · 3S₈ molecule coincides with the crystal symmetry. The crystals are optically uniaxial with n_o/n_e of about 1.2 and show dichroism at the UV-visible wavelengths. Second harmonic generation (SHG) tensor elements were determined from Maker fringes measured with an Nd:YAG laser (∼10 ns pulse, 1064 nm). The coefficient d_222,eff = 32.0 pm/V for the light polarized parallel to the layers of iodine and sulfur atoms in the AsI₃ · 3S₈ crystal ab plane is markedly larger than d₃₃₃ = 11.6 pm/V for the polarization of light parallel to the crystal c axis. The anisotropy parameter, defined as the d_222,eff/d₃₃₃ ratio, is about 2.7 for the AsI₃ · 3S₈ crystal, smaller than that for the isomorphous CHI₃ · 3S₈ crystal (7.3) but larger than for the SbI₃ · 3S₈ crystal (0.7). Highly anisotropic components of the first hyperpolarizability tensor of an AsI₃ · 3S₈ molecule, β, were derived from the quadratic nonlinear susceptibility tensor of the crystal.     

Effect of microstructural characteristics on the magnetic properties of sol-gel synthesized ZnMnO

In this paper we report the effect of microstructural characteristics on the magnetic properties of sol-gel synthesized Mn-doped ZnO. The microstructural characteristics of the samples (e.g., grain sizes and their distribution) have been varied by changing the sintering temperature (T_S) and sintering duration (T_H). Weak room temperature ferromagnetism (RTFM) has been observed in the samples sintered for ∼8 h at 500, 600, 700, 800 and 900 °C. The ferromagnetic fraction and the saturation magnetization, however, first increase as T_S increases from 500 to 600 °C and after that both start decreasing. On the other hand, the samples sintered for ∼12 h at the same temperatures show paramagnetic behavior at room temperature. Field emission scanning electron microscope (FESEM) results show enhancement in the grain sizes with the increase in both T_S and T_H. Energy dispersive X-ray (EDAX) results show increase in the oxygen content in the sample with increase in both T_S and T_H. X-ray diffractometer (XRD) measurements reveal that the basic crystal structure of all the samples corresponds to the wurtzite structure of pure ZnO together with some minor impurities. The correlation between the observed magnetic properties and the microstructural characteristics of the samples has been discussed in this paper.     

Specific heat measurements in pure and in (Cu, Mn, Fe, Ni)-doped single-crystals of l-arginine phosphate monohydrate

The influence of highly diluted impurities (Cu, Mn, Fe, Ni) on the temperature (T) dependence of the specific heat (c_p) of l-arginine phosphate monohydrate (LAP) was investigated in the temperature range 1.8-300 K. The doped samples yielded values for c_p in excess to those obtained for a pure LAP sample. The melting temperatures (T_m≈420 K) obtained by differential scanning calorimetry for pure and doped LAP samples were found not to be significantly affected by the impurities. The T-dependence of c_p was fully accounted for by taking into consideration the Debye contribution, an Einstein term and a contribution due to both Frenkel and Schottky defects. The model fit all c_p versus T data using a single value for both the Debye (θ_D=160 K) and the Einstein (T_E=376.8 K) temperatures, and for the energy (ε_d=157.9 meV) required to create the defects.     

Spin-glass-like behaviour and magnetic order in Mn[Cr0.5Ga1.5]S4 spinels

Magnetization and susceptibility were investigated as a function of temperature and magnetic field in polycrystalline Mn[Cr_0.5Ga_1.5]S₄ spinel. The dc susceptibility measurements at 919 Oe showed a disordered ferrimagnetic behaviour with a Curie-Weiss temperature θ_CW=−55 K and an effective magnetic moment of 5.96 μ_B close to the spin-only value of 6.52 μ_B for Cr³⁺ and Mn²⁺ ions in the 3d³ and 3d⁵ configurations, respectively. The magnetization measured at 100 Oe revealed the multiple magnetic transitions with a sharp maximum at the Néel temperature T_N=3.9 K, a minimum at the Yafet-Kittel temperature T_YK=5 K, a broad maximum at the freezing temperature T_f=7.9 K, and an inflection point at the Curie temperature T_C=48 K indicating a transition to paramagnetic phase. A large splitting between the zero-field-cooled (ZFC) and field-cooled (FC) magnetizations at a temperature smaller than T_C suggests the presence of spin-glass-like behaviour. This behaviour is considered in a framework of competing interactions between the antiferromagnetic ordering of the A(Mn) sublattice and the ferromagnetic ordering of the B(Cr) sublattice.     

Silicon carbonitride by remote microwave plasma CVD from organosilicon precursor: Growth mechanism and structure of resulting Si:C:N films

The remote microwave hydrogen plasma chemical vapor deposition (RP-CVD) from bis(dimethylamino)methylsilane precursor was used for the synthesis of silicon carbonitride (Si:C:N) films. The effect of thermal activation on the RP-CVD process was examined by determining the mass- and the thickness-based film growth rate and film growth yield, at different substrate temperature (T_S). It was found that the mechanism of the process depends on T_S and for low substrate temperature regime, 30 °C ≤ T_S ≤ 100 °C, RP-CVD is limited by desorption of film-forming precursors, whereas for high substrate temperature regime, 100 °C < T_S ≤ 400 °C, RP-CVD is a non-thermally activated and mass-transport limited process. The Si:C:N films were characterized by X-ray photoelectron and Fourier transform infrared spectroscopies, as well as by atomic force microscopy. The increase of T_S enhances crosslinking in the film via the formation of nitridic Si-N and carbidic Si-C bonds. On the basis of the structural data a hypothetical crsosslinking reactions contributing to silicon carbonitride network formation have been proposed.     

Study of ferromagnetism in Bi2S3 and ZnS nanocrystalline powders

Results of magnetic measurements suggested that Bi₂S₃ and ZnS nanocrystalline powders prepared by hydrothermal method could possibly exhibit room temperature ferromagnetism. The measured saturation magnetization of the powders increases with an increase of annealing temperature from 300 to 500 °C. Ab initio calculations suggested that the cation vacancies on the surface of Bi₂S₃ and ZnS nanograins could be responsible for the observed magnetic moments. Heat-treatment of Bi₂S₃ or ZnS nanocrystalline powders in Bi or Zn vapor could bring about an enhancement of ferromagnetism. The calculation results indicated that the interstitial Bi or Zn atoms in Bi₂S₃ (0 0 1) or ZnS (0 0 1) surface could induce magnetic moments.     

Superconducting transition temperatures of amorphous binary alloy systems based on Bi,Pb, Ga and Be

Quench condensed binary alloy films are produced by evaporation from two separated furnaces. The films contain the whole composition range of the respective alloy system in well defined arrangement.T _c is measured as a function of concentration. Eight predominantly amorphous alloy systems are studied: Bi—Ga, Pb—Ga, Pb—Bi, Be—Bi, Be—Pb, Be—Ga, Be—Al, Be—Li. In Bi—Ga and Pb—GaT _c is a linear function of concentration in the amorphous composition range. In Pb—BiT _c has a maximum. All Be-alloys show lower transition temperatures than pure quench condensed Be. Except for Be—Li all systems have aT _c minimum. The experiments are compared to aT _c calculation using tunelling spectroscopy data. Except for the Be-alloys the agreement is satisfying.