利用同步辐射光电子能谱技术测量ZnO/PbTe异质结的能带带阶

异质结结构界面的能带带阶是一个非常重要的参数,该参数的精确确定直接影响异质结的光电性质研究以及异质结在光电器件上的应用.利用同步辐射光电子能谱技术测量了ZnO/PbTe异质结结构的能带带阶.测量得到该异质结价带带阶为2.56 eV,导带带阶为0.49 eV,是一个典型的类型I的能带排列.利用变厚度扫描的测量方法发现,ZnO/PbTe界面存在两种键,分别是Pb—O键(低结合能)和Pb—Te键(高结合能).在ZnO/PbTe异质结界面的能带排列中导带带阶较小,而价带带阶较大,这一能带结构有利于PbTe中的激发电子输运到ZnO导电层中.该类结构在新型太阳电池、中红外探测器、激光器等器件中具有潜在的应用价值.     

ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy

Thin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25 ± 0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule.     

Growth of Fe on Ge(1 1 1) at room temperature studied by X-ray photoelectron diffraction

The growth of ultrathin Fe films of various coverages on Ge(1 1 1) at room temperature using molecular beam epitaxy (MBE) was studied via X-ray photoelectron diffraction (XPD or XPED) together with low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). All experimentally observed XPD patterns suggested local order structures of the Fe layers for all thicknesses studied. The short-range order of the resulting structures was found to be enhanced for thinner layers whereas the long-range order was gradually lost with increasing Fe thicknesses. At a very low coverage of 0.8 Å Fe and Ge tend to react to the partly ordered structure in which Fe atoms were located in local environments similar to those for higher Fe coverages. Comparison of theoretical and experimental XPD patterns, along with XPS results, showed that intermixing between Fe and Ge occurred during the pseudomorphic growth with a stacking fault near the interface for all Fe coverages under study. Nevertheless, small percentage of domains without the stacking fault was also found to coexist with those with the stacking fault by performing a quantitative analysis of a reliability factor R of the Fe2p pattern for 5.4 Å. The orientation changes of the Ge2p and Ge3d XPD patterns with Fe thickness were unambiguously explained in terms of their different dependencies on the overlayer thickness due to the different inelastic mean free path lengths used in the simulations. Also, Fe got increasingly enriched in the grown layers with increased Fe coverage. The resulting structures and intermixing are discussed in detail.     

XPS and UPS study on band alignment at Pt-Zn-terminated ZnO(0 0 0 1) interface

The interface between Pt and Zn-terminated ZnO(0 0 0 1) was investigated by X-ray and ultra violet photoelectron spectroscopy in order to examine electronic band alignment. An angle-resolved X-ray photoelectron spectroscopy measurement of the clean ZnO(0 0 0 1) surface has revealed a downward band bending by 0.25 eV. The results of the valence band analysis show that the work function and the valence band maximum of clean ZnO(0 0 0 1) were 4.49 eV and 2.79 eV, respectively. Platinum was then deposited in several deposition steps onto a clean ZnO(0 0 0 1) surface up to 0.6 nm in thickness. After the deposition, the binding energy of Zn 2p doublet peak was shifted towards lower value by 0.77 eV, and the measured work function changed to 5.51 eV. As a result, the Schottky barrier height of Pt/ZnO(0 0 0 1) interface was 1.11 eV.     

Energy band alignment of PbTe/CdTe(111) interface determined by ultraviolet photoelectron spectra using synchrotron radiation

The energy band structure with type-I alignment at the PbTe/CdTe(111) heterojunction interface is determined by the ultraviolet photoelectron spectrum using synchrotron radiation.The valence band and conduction band offsets are obtained to be 0.09±0.12 and 1.19±0.12 eV,respectively.These results are in agreement with theoretically predicted ones.The accurate determination of the valence band and conduction band offsets is useful for the fundamental understanding of the mid-infrared light emission from the PbTe/CdTe heterostructures and its application in devices.     

Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy

XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. The valence band offset (VBO) was determined to be 0.38 ± 0.15 eV and a type-II heterojunction with a conduction band offset (CBO) of 2.43 ± 0.15 eV was obtained.     

Surface restructuring process on a Ag/Ge(0 0 1) surface studied by photoelectron spectroscopy

The atomic structure and charge distribution of Ag adsorbed Ge(0 0 1) surfaces have been investigated by means of Ge 3d core- and Ag 4d core-levels photoelectron spectroscopy. A mono-atomic layer of Ag was deposited on the clean Ge(0 0 1) c(4×2) surface at 80 K. The Ge 3d spectrum measured at 80 K was deconvoluted into two surface components, which is consistent with the previously proposed Ag ad-dimer model. After annealing the surface at room temperature, the rearrangement of the charge distribution was revealed to include electron transfer from Ge to Ag in conjunction with the surface restructuring process by the annealing.     

Band bending at the Si(1 0 0)-Si3N4 interface studied by photoreflectance spectroscopy

Photoreflectance spectroscopy has been used to measure the band bending at the p-Si(1 0 0)-Si₃N₄ interface subjected to annealing and ion implantation. Upon annealing, unimplanted interfaces exhibit a constant band bending of about 0.77 eV, even though the spectral amplitude changes due to variations in the way minority carriers are annihilated at the interface. Implantation reduces the band banding, although subsequent annealing in stages up to 900 °C progressively restores the bending to its original value through pathways exhibiting a wide range of activation barriers.     

Investigation of Zn_(1-x)Cd_xO films bandgap and Zn_(1-x)Cd_xO/ZnO heterojunctions band offset by x-ray photoelectron spectroscopy

A series of Zn_(1-x)Cd_xO thin films have been fabricated on sapphire by pulsed-laser deposition(PLD), successfully. To investigate the effect of Cd concentration on structural and optical properties of Zn_(1-x)Cd_xO films, x-ray diffraction(XRD),ultraviolet-visible spectroscopy(UV-vis), and x-ray photoelectron spectroscopy(XPS) are employed to characterize the films in detail. The XRD pattern indicates that the Zn_(1-x)Cd_xO thin films have high single-orientation of the c axis. The energy bandgap values of ZnCdO thin films decrease from 3.26 eV to 2.98 eV with the increasing Cd concentration(x)according to the(αhν)~2–hν curve. Furthermore, the band offsets of Zn_(1-x)Cd_xO/ZnO heterojunctions are determinated by XPS, indicating that a type-I alignment takes place at the interface and the value of band offset could be tuned by adjusting the Cd concentration.     

Growth of (√3 × √3)-Ag and (1 1 1) oriented Ag islands on Ge/Si(1 1 1) surfaces

We have studied the growth of Ag on Ge/Si(1 1 1) substrates. The Ge/Si(1 1 1) substrates were prepared by depositing one monolayer (ML) of Ge on Si(1 1 1)-(7 × 7) surfaces. Following Ge deposition the reflection high energy electron diffraction (RHEED) pattern changed to a (1 × 1) pattern. Ge as well as Ag deposition was carried out at 550 °C. Ag deposition on Ge/Si(1 1 1) substrates up to 10 ML has shown a prominent (√3 × √3)-R30° RHEED pattern along with a streak structure from Ag(1 1 1) surface. Scanning electron microscopy (SEM) shows the formation of Ag islands along with a large fraction of open area, which presumably has the Ag-induced (√3 × √3)-R30° structure on the Ge/Si(1 1 1) surface. X-ray diffraction (XRD) experiments show the presence of only (1 1 1) peak of Ag indicating epitaxial growth of Ag on Ge/Si(1 1 1) surfaces. The possibility of growing a strain-tuned (tensile to compressive) Ag(1 1 1) layer on Ge/Si(1 1 1) substrates is discussed.     

Initial oxidation of HF-acid treated Si(1 0 0) surfaces under air exposure studied by synchrotron radiation X-ray photoelectron spectroscopy

Initial oxidation of HF-acid treated Si(1 0 0) surfaces with air exposure has been studied by using synchrotron radiation X-ray photoelectron spectroscopy. We demonstrate that the initial oxidation is explained not by a layer-by-layer process, but by a non-uniform mechanism. Just after dipping a Si substrate in HF-acid and spin-drying, the Si surface is immediately oxidized partly with a coverage of 0.2. It is considered that the non-uniform oxidation takes place at surface defects on H passivated Si surfaces. With increasing the air exposure up to 1 week, we have found that the non-oxidized part is oxidized uniformly at slower rates compared to the beginning. IR absorption spectroscopy with a multiple-internal-reflection geometry clearly indicates the backbond oxidation of surface Si takes place despite the H passivation produced by the HF-acid treatment.     

Perturbation of Ge(1 1 1) and Si(1 1 1)√3α-Sn surfaces by adsorption of dopants

We test the response of the √3 × √3α reconstructions formed by 1/3 monolayer of tin adatoms on silicon and germanium (1 1 1) surfaces upon doping with electrons or holes, using potassium or iodine as probes/perturbers of the initial electronic structures. From detailed synchrotron radiation photoelectron spectroscopy studies we show that doping with either electrons or holes plays a complimentary role on the Si and Ge surfaces and, especially, leads to complete conversion of the Sn 4d two-component spectra into single line shapes. We find that the low binding energy component of the Sn core level for both Si and Ge surfaces corresponds to Sn adatoms with higher electronic charge, than the Sn adatoms that contribute to the core level high binding energy signal. This could be analyzed as Sn adatoms with different valence state.     

Ultrasmall Ge islands with low diameter-to-height aspect ratio on Si(1 0 0)-(2 × 1) surfaces

Scanning tunneling microscopy (STM) and high resolution cross-sectional transmission electron microscopy (XTEM) studies have been used to investigate the formation of Ge nanocrystals grown on Si(1 0 0)-(2 × 1) surfaces by molecular beam epitaxy (MBE). We observe relatively high density of Ge islands where small ‘pyramids’, small ‘domes’ and facetted ‘domes’ of various sizes co-exist in the film. As revealed from XTEM images, a large fraction of islands, especially dome-shaped Ge islands have been found to have an aspect ratio of ∼1 (diameter):1 (height). Observation of truncated-sphere-shaped Ge islands with a narrow neck contact with the wetting layer is reported.     

Valence-band offset of p-NiO/n-ZnO heterojunction measured by X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy was used to measure the valence-band offset (VBO) of the NiO/ZnO heterojunction grown on quartz substrate by radio frequency (RF) magnetron sputtering. Core levels of Ni 2p and Zn 2p were used to align the VBO of p-NiO/n-ZnO heterojunction. The valence-band offset (ΔEV) is determined to be 1.47 eV. According to the band gap of 3.7 eV for NiO and 3.37 eV for ZnO, the conduction-band offset (ΔEC) in the structure was calculated to be 1.8 eV, and it has a type-II band alignment.     

Ge adsorption on SiC(0 0 0 1): An ab initio study

In this work we have performed an ab initio total energy investigation of the Ge adsorption process on the Si-terminated SiC(0 0 0 1)- and (3 × 3) surfaces. We find that Ge adatoms lying on the topmost sites of the and (3 × 3) surfaces represent the energetically more stable configurations at the initial stage of the Ge adsorption on the SiC(0 0 0 1) surface. The Si → Ge substitutional adsorption processes have been examined as a function of the Si and Ge chemical potentials. Increasing the Ge coverage, we verify that the formation of Ge wetting layer on the surface, and Ge nanocluster on the (3 × 3) surface are the energetically more stable configurations, in accordance with recent experimental findings.     

Methanol adsorption on Pd(1 1 0) and Ag/Pd(1 1 0) studied by high-resolution photoelectron spectroscopy

Adsorption of methanol on clean Pd(1 1 0) and on an alloyed Ag/Pd(1 1 0) surface has been studied by high-resolution photoelectron spectroscopy. On Pd(1 1 0) two different chemisorbed methanol species were observed for temperatures up to 200 K, with the one at lower binding energy remaining at low coverage. These species were attributed to methanol adsorbed in two different adsorption sites on the Pd(1 1 0) surface. As is well established for this system, heating to 250 K resulted in decomposition of methanol into CO. The adsorption and decomposition behaviour of methanol on the Ag/Pd(1 1 0) surface alloy formed by depositing Ag on Pd(1 1 0) at elevated temperature was similar to that of the pure Pd(1 1 0) surface. This suggests that the amount of Ag present in the Pd(1 1 0) surface in this study does not affect the decomposition behaviour of methanol as compared to pure Pd(1 1 0). Complementary density functional theory calculations also show little influence of Ag on the binding of methanol to Pd. These calculations predict an on-top adsorption site for low methanol coverages.     

Angle resolved photoemission study of the Ce/Pd(1 1 1) interface

X-ray and UV excitation angle resolved photoemission spectroscopy of ultra-thin films of cerium deposited on a Pd(1 1 1) single-crystal surface has been carried out. Both core level and valence band spectra show a formation of a surface alloy exhibiting d- and f-electron orbital hybridization. An azimuth and polar angle mapping of X-ray excited photoemission intensities results in a surface-geometrical structure information. Mapping of ultra-violet photoelectron intensities as a function of emission angles is used for a band mapping and an electronic structure determination. The d-, f-hybridization occurs even for 0.7 ML of Ce deposited at room temperature. The surface annealing at 260 °C enhances this behavior. A shift of Pd 4d-derived states to higher binding energy in the Ce-Pd systems is observed.     

Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy

The valence band offset (VBO) of MgO/TiO₂ (rutile) heterojunction has been directly measured by X-ray photoelectron spectroscopy. The VBO of the heterojunction is determined to be 1.6 ± 0.3 eV and the conduction band offset (CBO) is deduced to be 3.2 ± 0.3 eV, indicating that the heterojunction exhibits a type-I band alignment. These large values are sufficient for MgO to act as tunneling barriers in TiO₂ based devices. The accurate determination of the valence and conduction band offsets is important for use of MgO as a buffer layer in TiO₂ based field-effect transistors and dye-sensitized solar cells.     

Discrimination of individual atoms on Ge/Si(1 1 1)-(7 × 7) intermixed surface

We have discriminated individual Ge atoms from the intermixed Ge/Si(1 1 1)-(7 × 7) surface using a non-contact atomic force microscope at a room temperature environment. In fact, Si-Ge (IV-IV) binary system is considered as one of the most difficult systems for atomic discrimination among atoms in the IV group because of the similarities in the electronic and chemical properties. However, in this study, we found one of the most attractive tools to discriminate a specific atom from the others even in the difficult Si-Ge system. Ge atoms are shown as dim spots in comparison to Si atoms with bright spots on the intermixed surface by a weak chemical bonding energy and/or a relaxation effect despite large atomic radius and high spatial position in both variable frequency shift and topographic images. The discrimination of individual atoms with respect to the chemical interaction variation will further provide a chance to manipulate different atomic species and assemble various nanostructures in near future.     

Mn/PbTe(111)界面行为的光电子能谱研究

利用X光电子能谱(XPS)对Mn在PbTe(111)表面上沉积生长的界面性质进行了研究.研究表明Mn的沉积使衬底发生了原子尺度上的突变及金属/半导体界面的形成.从X光电子能谱的芯态能级峰来看,随着Mn膜的沉积Pb 4f峰的低结合能端出现了金属Pb的特征新峰,而Te 3d峰的高结合能端却出现了MnTe特征新峰.且随着Mn膜厚度的增加这些新峰变得越来越明显,当Mn膜厚度超过7 ML(monolayer)(即超过Pb,Te的探测深度)时,衬底信号峰完全消失,只剩下金属Pb和MnTe的芯态能级峰.Mn膜厚度继续增 关键词： PbTe半导体 界面形成 光电子能谱 偏析