外场电压和Ag纳米尺寸对来自Ag的光电发射谱的影响

研究外场电压和纳米银粒子的尺寸对来自镶嵌在BaO薄膜中的纳米银粒子的光电发射的影响。在不同电压和不同尺寸条件下，计算了波长范围在 0.2到0.8μm的光电发射谱。给出了光电发射阈值对外场电压和纳米银粒子的尺寸依赖关系。同时认为在可见光范围中出现的光电发射是由于纳米银粒子的光学共振吸收所形成。这样的讨论有助于制备场助Ag-BaO光电薄膜的制备和工艺优化。     

Ag-BaO薄膜内场助光电发射增强现象研究

通过在Ag-BaO薄膜表面真空沉积10nm厚的银电极,成功制备了内场助结构Ag-BaO光电阴极.测试结果显示,Ag-BaO薄膜光电发射电流随内场助偏压的增大而上升.理论分析表明,Ag-BaO薄膜内场助光电发射增强现象产生的机理在于内场助作用下Ag微粒和BaO介质间等效界面位垒的减小及薄膜表面真空能级的相对下降. 关键词： 内场助光电发射 能带弯曲 金属超微粒子 Ag-BaO薄膜     

用电泳法制备ZnxMg1-xO薄膜及其特性研究

用电泳法制备了一系列ZnxMg1-xO薄膜. 对ZnxMg1-xO薄膜的光致发光研究表明，在薄膜发射谱的紫外区域有两个显著的峰，分别对应自由激子和激子间碰撞的发光. 在可见光区域，发射谱的强度基本保持恒定，没有发现通常报道的绿光发射，说明生长的薄膜中氧与其他元素保持很好的 化学配比，抑制了基于氧空位的绿带发射机理. 另一方面，薄膜成分中Mg含量的变化和退火 温度的变化对薄膜的发射谱有显著的影响，表现在ZnxMg1-xO的紫 外发射峰随Mg含量的增加向短波方向移动，同时峰强度随退火温度的升高显著增加. 关键词： 发射谱 x射线衍射 电泳法 ZnMgO薄膜     

镶嵌在氧化硅薄膜中纳米晶硅的可见光荧光谱与发光机制的研究

采用对非晶氧化硅薄膜退火处理方法，获得纳米晶硅与氧化硅的镶嵌结构．室温下观察到峰位为2.40eV光致发光．系统地研究了不同退火温度对薄膜的Raman谱、光荧光谱及光电子谱的影响．结果表明，荧光谱可分成两个不随温度变化的峰位为1.86和2.30eV的发光带．Si2p能级光电子谱表明与发光强度一样Si⁴⁺强度随退火温度增加而增加．Si平均晶粒大小为4.1—8.0nm，不能用量子限制模型解释蓝绿光的发射．纳米晶硅与SiO₂界面或SiO₂中与氧有关的缺陷可能是蓝绿光发射的主要原因 关键词：     

用电泳法制备ZnxMg1-xO薄膜及其特性研究

用电泳法制备了一系列ZnxMg1 -xO薄膜 .对ZnxMg1 -xO薄膜的光致发光研究表明 ,在薄膜发射谱的紫外区域有两个显著的峰 ,分别对应自由激子和激子间碰撞的发光 .在可见光区域 ,发射谱的强度基本保持恒定 ,没有发现通常报道的绿光发射 ,说明生长的薄膜中氧与其他元素保持很好的化学配比 ,抑制了基于氧空位的绿带发射机理 .另一方面 ,薄膜成分中Mg含量的变化和退火温度的变化对薄膜的发射谱有显著的影响 ,表现在ZnxMg1 -xO的紫外发射峰随Mg含量的增加向短波方向移动 ,同时峰强度随退火温度的升高显著增加     

金刚石镶嵌非晶碳膜表面形貌对场致电子发射的影响

用微波等离子体化学气相沉积设备，在经过不同研磨预处理的金属钼衬底上沉积出了表面形貌有较大差异的金刚石镶嵌非晶碳膜，分别用扫描电子显微镜（ＳＥＭ）、金相显微镜和Ｘ射线衍射谱（ＸＲＤ）以及Ｒａｍａｎ光谱对样品进行了分析测试．研究了各样品的场致电子发射特性，结果发现薄膜表面由大量镶嵌有金刚石小晶粒的非晶碳球组成，在我们的实验范围内，薄膜表面非晶碳球尺寸越小，场致电子发射效果越好     

Ag-BaO纳米薄膜红、蓝紫光波段光致荧光现象研究(Ⅰ)

金属纳米粒子/介质复合薄膜因其优良的光电特性和超快响应而成为应用背景很强的光电功能薄膜-采用真空沉积的方法制得了Ag-BaO纳米薄膜,测试到其在室温条件下的红光和蓝紫光波段的光致荧光光谱,认为Ag-BaO纳米薄膜的荧光发射主要来自于Ag纳米粒子的贡献-与该种材料的紫外-可见光吸收谱相比较,分析了Ag-BaO纳米薄膜材料不同可见光波段的荧光产生机理- 关键词：     

扩散掺杂的p型ZnO薄膜的光学性质研究

采用原子层沉积技术(atomic layer deposition)在InP衬底上生长ZnO薄膜,并在不同温度下(500和700 ℃)进行热退火处理,将P掺杂进入ZnO,得到p型ZnO薄膜。样品的光学特性通过光致发光光谱(photoluminescence, PL)来测定,得出热退火温度是影响P扩散掺杂的重要因素,低温PL光谱中,700 ℃热退火1 h样品的光谱展现出四个与受主相关的发射峰：3.351,3.311,3.246和3.177 eV,分别来自受主束缚激子的辐射复合(A°X)、自由电子到受主的发射(FA)、施主受主对的发射(DAP)以及施主受主对的第一纵向声子伴线(DAP-1LO),计算得到受主束缚能为122 meV,与理论计算结果一致。通过热扩散方式实现了ZnO薄膜的p型掺杂,解决了制约ZnO基光电器件发展的主要问题, 对ZnO基半导体材料及其光电器件的发展有重要意义。     

溅射制备纳米晶GaN:Er薄膜的室温发光特性

利用直流磁控共溅射方法制备了GaN:Er薄膜.X射线衍射结果显示薄膜为纳米多晶结构,根据谢乐公式,计算得到了GaN薄膜晶粒的平均大小为5.8nm;透射电子显微镜结果显示为非晶基质中镶嵌了GaN纳米颗粒,尺寸在6-8nm之间;紫外可见谱结果表明在500-700nm的可见光范围内,薄膜的平均透过率大于80%,在紫外可见谱基础上,利用Tauc公式计算得到了纳米晶GaN薄膜的光学带隙为3.22eV;最后,测量了GaN:Er薄膜的室温光致发光谱,获得了Er3 离子在554nm处的强烈绿光发射.     

金属UV光敏薄膜的实验研究

介绍了金属Au和Al薄膜的制备方法，研究了其UV光电发射特性，并做了寿命实验。给出了在真空中以及放在大气中光电发射衰减的情况。指出了其在大气中达到一个稳定值之后，再反复多次暴露于干燥大气时仍存在一个稳定光电发射周期的特点，可长达数月。金属薄膜有一个最佳膜层厚度，这与光电发射逸出深度、膜层结构等密切相关。近年来光电子成像器件发展非常迅速，急需光电发射均匀的面电子源，因此在微通道板的特性测试和像管的动态模拟中，Au和Al金属薄膜成为被优选的对象。     

Theoretical study on the photoelectric emission spectra of a field-assisted Au-BaO thin film

The dependence of the spectral distribution of photoelectron emission from gold nano-particles embedded in BaO semiconductor thin film on applied voltage and surface plasmon resonance of gold nano-particles is predicted and investigated theoretically. The photoelectron emission response curves to light wavelength between 0.2 and are given. The dependence of the wavelength threshold on the size of gold nano-particles and external field strength is also shown. The reason that the theoretical photoelectron emission spectra is in the visible region is explained. The probabilities increased for photoexcited electrons to overcome the barrier and escape from the surface are discussed. This could be of importance in designing field-assisted thin film and finding their optimum operation conditions.     

THEORETICAL DEPENDENCE OF LONG WAVELENGTH PHOTOEMISSION UPON THE SIZE OF Ag NANOPARTICLES EMBEDDED IN BaO SEMICONDUCTOR THIN FILM

The dependence of long wavelength photoemission upon the size of Ag nanoparticles embedded in a BaO semiconductor is predicted and discussed theoretically. The calculated results show that the increase in the diameter of the Ag nanoparticle, in the range from 1.5 to 37.0nm, leads to the emergence of a roughly Gaussian form of the photoemission spectra and the peaks become markedly narrower. The results also show that the increase in the diameter of the Ag nanoparticle leads to the decrease of the long wavelength threshold. The incident light wavelength corresponding to the peak value of the photoemission gets bigger with the increase of the size of Ag nanoparticles, thus showing a redshift.     

Thermal morphological evolution of platinum nano-particles in Pt–Al2O3 nano-composites

Temperature morphological evolution of nonpercolated granular nano-structures of platinum nano-particles embedded in an insulating alumina matrix was investigated by X-rays scattering in grazing angle reflection mode. In the investigated temperature range of 298–823 K, it was found that the annealing treatment tends to increase the Pt nano-particles' size and to produce a quasi-mono-disperse Pt nano-particles followed by a reduction of the barrier thickness between them. The percolation temperature is estimated to be of the order of 890 K. Using the rate constant governing the growth of the Pt nano-particles, the corresponding activation energy was determined to be about 90 kJ/mol.     

银氧铯光电阴极的长波光谱响应和固溶小胶粒

本文在文献[1,2]的基础上探讨了银氧铯阴极中固溶小胶粒对光电发射的贡献,推导出光电子能量分布和光电流密度、量子产额等公式,并进行了理论计算。理论曲线与实验曲线符合得比较好,从而肯定了这种阴极中的小银胶粒对长波光电发射的作用,并得出它的等效胶粒直径为31?左右。本文还讨论了银氧铯阴极的铯量处理、蒸银敏化和Fowler曲线等问题。 关键词：     

Charge-transfer at silver/phthalocyanines interfaces

Valence band photoemission spectroscopy (VB-PES) and inverse photoemission spectroscopy (IPES) were employed to determine the occupied and unoccupied density of states upon silver deposition onto layers of two phthalocyanines (H₂Pc and CuPc). The two different Pc molecules give rise to very distinct behaviour already during the initial stage of silver deposition. While in the CuPc case no shift occurs in the energy levels, the H₂Pc highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) are shifting simultaneously by 0.3 eV, i.e., the HOMO shifts away from the Fermi level while LUMO shifts towards the Fermi level. As the silver quantity increases the HOMO levels of both Pcs are shifting towards the Fermi level. When the Fermi level is resolved in the VB spectra, the characteristic features of H₂Pc and CuPc are smeared out to some extent. Shifts in HOMO and LUMO energy positions as well as changes in line shapes are discussed in terms of charge-transfer and chemical reactions at the interfaces.     

Morphological modifications of Ag/Cu(111) probed by photoemission spectroscopy of quantum well states and the Shockley surface state

Epitaxial ultra-thin Ag films grown on Cu(111) have been investigated by angle-resolved photoemission spectroscopy. The thickness dependence of the binding energy for the Shockley surface state at 300 K could be determined accurately in films up to 5 ML thick. Furthermore, we observe drastic changes in the film morphology after annealing to 450 K. Spectral modifications in the shape of the quantum-well states (QWS), characteristic for these ultra-thin silver films, prove that the surface morphology is homogeneous. The photoemission spectra also indicate that the silver film bifurcates to form a film exhibiting two distinct film thicknesses. For all levels of silver coverage, we identify surface regions that are 2 ML thick, while the thickness of the remaining surface depends on the amount of deposited silver. The almost purely Lorentzian line-shape of the spectral features corresponding to the two different surface regions show that both surface areas are atomically flat. PACS 68.55.Jk; 73.20.At; 73.21.Fg; 79.60.Dp     

Ultraviolet photoemission spectroscopy of hydrogen complex deactivation on InP:Zn(1 0 0) surfaces

Ultraviolet photoemission spectroscopy is used to study the kinetics of the H-Zn complex deactivation in Zn doped InP(1 0 0). Hydrogen injected into the material electronically passivates the local carrier concentration. Reverse-biased anneals of the InP under ultra-high vacuum show a dramatic change in the work function of the material with increasing temperature. Spectral features are also shown to be sensitive to sample temperature. To our knowledge, we show the first view of hydrogen retrapping at the surface using photoemission spectroscopy. A simple photoelectron threshold energy analysis shows the state of charge compensation of the material.     

An investigation of the electronic structure of silver azide by the photoemission method

The energy structure of silver azide was investigated by the photoemission method. The photoelectric work function for photons in the energy range 6.7–11.2 eV was determined from the electron energy distribution curves and the Einstein equation. The position of the Fermi level was determined from the difference in stopping potentials for silver metal and silver azide. The position of the acceptor levels is estimated and the structure of the valence band is discussed. A band scheme for silver azide is proposed.