The formation and migration of the vacancies in HCP metal Mg

The formation and migration energies of the mono- and di-vacancy in Mg crystal have been calculated using the modified analytical embedded atom method. The results show that, for mono-vacancy, the migration in the basal plane is slightly preferred to the migration out of the basal plane. For di-vacancy, the 1NN and 2NN configurations are not only easier to form but also more stable than the other configurations. The preferred migration mechanisms of the 1NN and 2NN di-vacancy are either invariable 1NN or 2NN configurations during migration in the basal plane or exchange 1NN for 2NN or 2NN for 1NN for migration out of the basal plane. These two-jump migration mechanisms of the di-vacancy, especially the former, are still preferred over the migration of the mono-vacancy. It is concluded that the greater the number of resting vicinity vacancies, the easier the migrating vacancy moves.     

Atomic simulation of the vacancies in BCC metals with MAEAM

The formation energy of the mono-vacancy and both the formation energy and binding energy of the di-and tri-vacancy in BCC alkali metals and transition metals have been calculated by using the modified analytical embedded-atom method (MAEAM). The formation energy of each type of configuration of the vacancies in the alkali metals is much lower than that in the transition metals. From minimum of the formation energy or maximum of the binding energy, the favorable configuration of the di-vacancy and tri-vacancy respectively is the first-nearest-neighbor (FN) or second-nearest-neighbor (SN) di-vacancy and the [112] tri-vacancy constructed by two first-and one second-nearest-neighbor vacancies. It is indicated that there is a concentration tendency for vacancies in BCC metals.     

The properties and structures of the mono- and the di- vacancy in Cu crystal

The structures and energies of formation and migration of the mono- and di-vacancy in Cu crystal have been described and calculated with modified analytical embedded atom method (MAEAM). The lattice relaxation is considered with molecular dynamics (MD) method at T=0 K. The results show the FN di-vacancy is the most stable and likely occurs in practice from the energy minimization. Compared with the mono-vacancy, the formation energy of the FN di-vacancy is higher than that of a mono-vacancy, but lower than that of two isolated mono-vacancy. The preferred migration mechanism of the FN di-vacancy is multi-jump of either vacancy (rotating the di-vacancy). The calculated migration energy of the FN di-vacancy is lower than that of a mono-vacancy, so the FN di-vacancy is easier to migrate. All of the calculated results are in good agreement with the experimental values.     

Interactions between vacancies and prismatic Σ3 grain boundary in α-Al_2O_3:First principles study

Interactions between vacancies and Σ3 prismatic screw-rotation grain boundary in α-Al_2O_3 are investigated by the first principles projector-augmented wave method.It turns out that the vacancy formation energy decreases with reducing the distance between vacancy and grain boundary(GB) plane and reaches the minimum on the GB plane(at the atomic layer next to the GB) for an O(Al) vacancy.The O vacancy located on the GB plane can attract other vacancies nearby to form an O–O di-vacancy while the Al vacancy cannot.Moreover,the O–O di-vacancy can further attract other O vacancies to form a zigzag O vacancy chain on the GB plane,which may have an influence on the diffusion behavior of small atoms such as H and He along the GB plane of α-Al_2O_3.     

The influence of oxygen vacancies on the electronic and magnetic properties of perovskite-like SrFeO3-x

The electronic, magnetic properties and lattice relaxations of oxygen-deficient cubic strontium ferrite, SrFeO_2.875, in ferromagnetic configuration are studied by means of the density functional theory using LCAO basis (SIESTA code) calculations. It is shown that Fe and Sr atoms are displaced from oxygen vacancies while oxygen anions are attracted to the vacancies. The DOS distributions, magnetic moments and atomic effective charges are analyzed in comparison with vacancy free SrFeO₃; these parameters are found to change weakly with appearance of oxygen vacancies, in contrast to conventional ionic picture. Some strengthening of Fe-O covalent bonds in the vicinity of the oxygen vacancy is found. The formation energy of oxygen vacancies and divacancies are evaluated.     

Strain field due to transition metal impurities in Ni and Pd

The strain field due to body centered substitutional transition metal impurities in Ni and Pd metals are investigated. The calculations are carried out in the discrete lattice model of the metal using Kanzaki lattice static method. The effective ion-ion interaction potential due to Wills and Harrison is used to evaluate dynamical matrix and the impurity-induced forces. The results for atomic displacements due to 3d, 4d and 5d impurities (Fe, Co, Cu, Nb, Mo, Pd, Pt and Au) in Ni and (Fe, Co, Cu, Ni, Nb, Mo, Pt and Au) impurities in Pd are given up to 25 NN’s of impurity and these are compared with the available experimental data. The maximum displacements of 4.6% and 3.8% of 1NN distance are found for NiNb and PdNb alloys respectively, while the minimum displacements of 0.63% and 0.23% of 1NN distance are found for NiFe and PdFe alloys respectively. Except for Cu, the atomic displacements are found to be proportional to the core radii and d state radius. The relaxation energies for 3d impurities are found less than those for 4d and 5d impurities in Ni and Pd metals. Therefore, 3d impurities may easily be solvable in these metals.     

Athermal migration of vacancies in iron and copper induced by electron irradiation

Abstract

Irradiation with high-energy particles induces athermal migration of point defects, which affects defect reactions at low temperatures where thermal migration is negligible. We conducted molecular dynamics simulations of vacancy migration in iron and copper driven by recoil energies under electron irradiation in a high-voltage electron microscope. Minimum kinetic energy required for migration was about 0.8 and 1.0 eV in iron and copper at 20 K, which was slightly higher than the activation energy for vacancy migration. Around the minimum energy, the migration succeeded only when a first nearest neighbour (1NN) atom received the kinetic energy towards the vacancy. The migration was induced by higher kinetic energies even with larger deflection angles. Above several electron-volts and a few 10s of electron-volts, vacancies migrated directly to 2NN and 3NN sites, respectively. Vacancy migration had complicated directional dependence at higher kinetic energies through multiple collisions and replacement of atoms. The probability of vacancy migration increased with the kinetic energy and remained around 0.3–0.5 jumps per recoil event for 20–100 eV. At higher temperatures, thermal energies slightly increased the probability for kinetic energies less than 1.5 eV. The cross section of vacancy migration was 3040 and 2940 barns for 1NN atoms in iron and copper under irradiation with 1.25 MV electrons at 20 K: the previous result was overestimated by about five times.     

Luminescence and crystal field analysis of Eu in Eu[Co(CN)6]·4H2O

The vibrational spectra of Eu[Co(CN)₆]·4H₂O and luminescence spectra of Eu³⁺ in this compound, using 355 nm excitation at temperatures down to 10 K, have been assigned. A clear distinction is made between the n=5 and 4 members of the Ln[M(CN)₆]·nH₂O series from the vibrational spectra. The electronic spectra show prominent vibronic structures, particularly for the ⁵D₀→⁷F₂ sideband. A resonance occurs between the transitions ⁵D₀→⁷F₁(III) and ⁵D₀→⁷F₀+ν(Eu−N). A crystal field analysis of the derived energy data set is presented for Eu³⁺ in eight coordination geometry.     

Defect formation and water incorporation in Y2O3

The molecular statics method is used to study the formation of defects and water incorporation in Y₂O₃. The crystal structure, the isothermal compressibility, and the formation enthalpy of Y₂O₃ calculated with the chosen interaction potentials are in good agreement with the experimental data. The formation energies of intrinsic and impurity defects are evaluated. The binding energy of protons and oxygen vacancies with an acceptor impurity at different distances is calculated. Various water incorporation reactions in the oxide are examined, including the mechanisms involving oxygen interstitial sites and oxygen vacancies produced by the acceptor doping. It is shown that the water incorporation in pure Y₂O₃ is energetically less favorable than in the acceptor doped oxide.     

Defect properties of CuInSe2 and CuGaSe2

Using first-principles electronic structure theory, we have calculated defect formation energies and defect transition levels in CuInSe₂ and CuGaSe₂. We show that (i) it is easy to form Cu vacancies in CuInSe₂, and (ii) it is also relatively easy to form cation antisite defects (e.g. In_Cu) for this ternary compound. Consequently, defect pairs such as (2V_Cu+In_Cu) have a remarkably low formation enthalpy. As a result, the formation of a series of Cu-poor compounds (CPCs) such as CuIn₅Se₈ and CuIn₃Se₅, is explained as a repeat of (2V_Cu+In_Cu) pairs in CuInSe₂. The very efficient p-type self-doping ability of CuInSe₂ is explained by the easy formation of the shallow Cu vacancies. The electrically benign character of the natural defect in CuInSe₂ is explained in terms of an electronic passivation of the by . For CuGaSe₂, we find that (i) the native acceptor formation energies and transition energy levels are similar to that in CuInSe₂, but the donor formation energy is larger in CuGaSe₂. (ii) The Ga_Cu donor level in CuGaSe₂ is deeper than In_Cu donor level in CuInSe₂, therefore, Ga_Cu behaves as an electron trap in CuGaSe₂, even when it is passivated by V_Cu. We have also calculated the band alignment between the CPCs and CuInSe₂, showing that it could have significant effect on the solar cell performance.     

淬入空位在AuCu有序化过程中的作用

本文通过电阻测量研究了淬火和退火温度对AuCu合金有序化过程的影响,结果表明:1.AuCu合金的有序化过程可分为两个阶段:1)局部有序或有序相成核阶段,电阻上升;2)有序相(或畴)长大阶段,电阻下降。2.淬火后低温退火时,AuCu有序化主要是通过过饱和的淬入空位在金属中的移动而实现的。有序化的速度正比于淬入空位的浓度和移动率。3.通过有序化速度随淬火温度和退火温度的变化,测得AuCu中空位的形成能E_f和移动激活能E_m相应为0.95eV和0.81eV。4.在等温退     

Self-diffusion of BCC transition metals calculated with MAEAM

The energy during the process of self-diffusion in BCC transition metals Fe, W, Mo, Cr, Ta, Nb and V has been calculated by using modified analytic embedded-atom method (MAEAM). For each kind of three diffusion mechanisms nearest-neighbor (NN), next-nearest-neighbor (NNN) and third-nearest-neighbor (TNN), the energy curve is symmetric and the maximum value of the energy appears at the middle point of the diffusion path. Determined mono-vacancy formation energy , migration energy and activation energy Q_1v for self-diffusion agree well with available experimental data of NN diffusion and are better than those obtained by the analytic embedded-atom method (AEAM) and Finnis–Sinclair models. Compared the energies corresponding to three diffusion mechanisms, the NN diffusion needs the lowest activation energy (and thus the lowest migration energy). So that, the NN mono-vacancy diffusion is favorable in BCC transition metals.     

Calculation of the formation energies of isolated vacancy and adatom-vacancy pair at low-index surfaces of fcc metals with MAEAM

The formation energies of isolated vacancy and adatom-vacancy pair (where the two are separated by a large distance) at low-index surfaces of fcc metals calculated by using the modifies analytical embedded atom method (MAEAM). The results predict the prevailing formation of vacancies on the surfaces (1 1 1), (1 0 0) (but Pd), Cu and Ni on the (1 1 0) surfaces at low temperature, and the defect formation energies consistently create in the sequence (1 1 0) → (1 0 0) → (1 1 1). With good accuracy, the calculated energy values coincide with those obtained by the embedded atom methods (EAM) and from experiments. The correctness of the method by which calculated the formation energies of point defects on the surface was proved.     

Intrinsic magnetism induced by vacancy in GaN

We performed total energy electronic-structure calculations based on DFT that clarify the intrinsic magnetism of undoped GaN. The magnetism is due to Ga, instead of N, vacancies. The origin of magnetism arises from the unpaired 2p electrons of N surrounding Ga vacancy. At a vacancy concentration of 5.6%, the ferromagnetic state is 181 meV lower than the antiferromagnetic state. Our findings are helpful to gain a more novel understanding of structural and spin properties of Ga vacancy in wurtzite GaN and also provide a possible way to generate magnetic GaN by introducing Ga vacancies instead of doping with transition-metal atoms.     

Comparative study of crystal field effects for Ni ion in LiGa5O8, MgF2 and AgCl crystals

Exchange charge model (ECM) of crystal field was used to calculate the crystal field parameters (CFPs) and model the energy levels for Ni²⁺ ion in LiGa₅O₈, MgF₂ and AgCl crystals. Calculated energy levels (including splitting of the orbital triplets) are in good agreement with experimental absorption spectra. Covalent effects were shown to play an important role in all considered crystals. Bilinear forms built up from the overlap integrals between (Ni²⁺-Cl⁻)→(Ni²⁺-O²⁻)→(Ni²⁺-F⁻) pairs were considered a quantitative measure of the covalent (nephelauxetic) effects.     

Atomistic simulation of Pt trimer on Pt(1 1 1) surface

The diffusion of Platinum trimer on Pt(1 1 1) is studied at different temperatures by molecular dynamics (MD) simulation. The structure stability is studied by cluster binding energy. The interaction between adatoms and surface atoms is discussed based on the calculated phonon density of state of Pt trimer. The diffusion coefficients of Pt trimer are derived from mean square displacement of cluster’s mass-center, which is obtained by long simulation times (?0.2 s) and tracing of interstitial atoms on surface. Then the diffusion prefactor and migration energy are deduced from Arrhenius relation. The calculated results are in reasonable agreement with experiment. In addition, using the diffusion prefactor and migration energy, the efficiency of Pt trimer as a critical nucleus for three-dimensional growth of thin films is discussed.     

In situ energy dispersive X-ray diffraction study of iron disilicide thermoelectric materials

The dynamic phase transformation and structure of rapidly solidified Fe_1−xCo_xSi₂ (0.02?x?0.06) thermoelectric materials were in situ investigated under high temperatures and high pressures by energy dispersive X-ray diffraction using synchrotron radiation. The FeSi₂ alloys which solidified as α-Fe₂Si₅ and ε-FeSi eutectic structures, were transformed to the semiconducting β-FeSi₂ phase upon heating by the main reaction α+ε→β and the subsidiary reaction α→β+Si. The low heating rates and Co contents were found to be beneficial for the β phase formation. The decomposition temperature of β→α+ε was weakly dependent on heating rate, but significantly suppressed by the high pressures.     

Formation of thermal vacancies in highly As and P doped Si

Using positron annihilation measurements we observed the formation of thermal vacancies in highly As and P doped Si. The vacancies start to form at temperatures as low as 650 K and are mainly undecorated at high temperatures. Upon cooling the vacancies form stable vacancy-impurity complexes such as V-As3. We determine the vacancy formation energy of E(f)=1.1(2) eV and the migration energy of E(m)=1.2(1) eV in highly doped Si. By associating these values with the vacancy-impurity pair, we get an estimate of 2.8(3) eV for the formation energy of an isolated neutral monovacancy in intrinsic Si.     

A first-principles study of ferromagnetism in Pd-doped ZnO

The electronic structures and magnetic properties of Pd-doped ZnO have been studied by the full-potential linear augmented plane wave (FLAPW) method using the generalized gradient approximation (GGA). We find that Pd-doped ZnO becomes 100% spin polarized when Pd substitutes for Zn in the 2×2×2 ZnO supercell. The supercell magnetic moment reaches 2.0μ_B. Long-range ferromagnetic (FM) coupling is obtained with all Pd dopant configurations, and a Curie temperature as high as 860 K is predicted for the ground-state configuration. The hybridized Pd(4d)-O(2p)-Zn(4d)-O(2p)-Pd(4d) chain formed through p-d-like coupling is responsible for the long-range room-temperature FM coupling. We discuss the effect of O vacancies or Zn vacancies on the magnetism as well.     

Atomistic simulation of point defects at low-index surfaces of noble metals

The formation energies and the migration energies of an isolated vacancy and adatom formed on low-index surfaces are calculated with MAEAM for three noble metals Cu, Ag and Au. The results indicate that the formation energies of an isolated vacancy or adatom increase with increasing atom density in the sequence (1 1 0) → (1 0 0) → (1 1 1), and it is more difficult to form an adatom than to form a vacancy at the same surface. For the mobility of an isolated vacancy, the migration energy grows in the sequence (1 0 0) → (1 1 0) → (1 1 1) for each noble metal. However, a much less migration energy is obtained for the migration of an adatom on (1 1 1) surface.