Thermal equation-of-state of osmium: a synchrotron X-ray diffraction study

The pressure-volume-temperature behavior of osmium was studied at pressures and temperatures up to 15 GPa and 1273 K. In situ measurements were conducted using energy-dispersive synchrotron X-ray diffraction in a T-cup 6-8 high pressure apparatus. A fit of room-temperature data by the third-order Birch-Murnaghan equation-of-state yielded isothermal bulk modulus K₀=435(19) GPa and its pressure derivative K′₀=3.5(0.8) GPa. High-temperature data were analyzed using Birch-Murnaghan equation of state and thermal pressure approach. The temperature derivative of bulk modulus was found to be −0.061(9) GPa K⁻¹. Significant anisotropy of osmium compressibility was observed.     

Experimental constraints on the phase diagram of elemental zirconium

The phase diagram of zirconium metal has been studied using synchrotron X-ray diffraction and time-of-flight neutron scattering at temperatures and pressures up to 1273 K and 17 GPa. The equilibrium phase boundary of the α-ω transition has a dT/dP slope of 473 K/GPa, and the extrapolated transition pressure at ambient temperature is located at 3.4 GPa. For the ω-β transition, the phase boundary has a negative dT/dP slope of 15.5 K/GPa between 6.4 and 15.3 GPa, which is substantially smaller than a previously reported value of −39±5 K/GPa in the pressure range of 32-35 GPa. This difference indicates a significant curvature of the phase boundary between 15.3 and 35 GPa. The α-ω-β triple point was estimated to be at 4.9 GPa and 953 K, which is comparable to previous results obtained from a differential thermal analysis. Except for the three known crystalline forms, the β phase of zirconium metal was found to possess an extraordinary glass forming ability at pressures between 6.4 and 8.6 GPa. This transformation leads to a limited stability field for the β phase in the pressure range of 6-16 GPa and to complications of high-temperature portion of phase diagram for zirconium metal.     

Ionic to electronic dominant conductivity in Al2(WO4)3 at high pressure and high temperature

Electrical conduction and crystal structure of Al₂(WO₄)₃ at 400 °C have been studied as a function of pressure up to 5.5 GPa using impedance methods and synchrotron radiation X-ray diffraction, respectively. AC impedance spectroscopy and DC polarization measurements reveal an ionic to electronic dominant transition in electrical conductivity at a pressure as low as 0.9 GPa. Conductivity increases with pressure and reaches a maximum at 4.0 GPa, where the conductivity value is 5 orders of magnitude greater than the 1 atm value. Upon decompression, the conductivity retains the maximum value until the sample is cooled at 0.5 GPa. The high pressure-temperature X-ray diffraction results show that the lattice parameters decrease as pressure increases and the crystal structure undergoes an orthorhombic to tetragonal-like transformation at a pressure ∼3.0 GPa. The change of conduction mechanism from ionic to electronic may be explained by means of pressure-induced valence change of W⁶⁺→W⁵⁺, which results in electron transfer between W⁵⁺-W⁶⁺ sites at high pressure.     

Structural phase transition of ScSb and YSb with a NaCl-type structure at high pressures

By use of synchrotron radiation, powder X-ray diffraction of ScSb and YSb with a NaCl-type structure has been studied up to 45 GPa at room temperature. A first-order phase transition from the NaCl-type (B1) to a CsCl-type structure (B2) began to occur at around 28 GPa for ScSb and at around 26 GPa for YSb. Crystal data of the high-pressure phase of both antimonides are obtained. The high-pressure structural behavior of ScSb and YSb is similar to that of heavier LnSb (Ln=Dy-Lu). The B1-B2 transition for ScSb and YSb can be understood according to the rigid sphere model. The bulk moduli of ScSb and YSb are about 58 GPa at ambient pressure.     

Structural and elastic properties of TiN under high pressure

We have investigated the structural and elastic properties of TiN at high pressures by the first-principles plane wave pseudopotential density functional theory method at applied pressures up to 45.4 GPa. The obtained normalized volume dependence of the resulting pressure is in excellent agreement with the experimental data investigated using synchrotron radial x-ray diffraction (RXRD) under nonhydrostatic compression up to 45.4 GPa in a diamond-anvil cell. Three independent elastic constants at zero pressure and high pressure are calculated. From the obtained elastic constants, the bulk modulus, Young's modulus, shear modulus, acoustic velocity and Debye temperature as a function of the applied pressure are also successfully obtained.     

Raman and photoluminescence spectroscopy study of benzoic acid at high pressures

Benzoic acid (C₆H₅COOH, BA) has been studied by high pressure Raman and fluorescence spectroscopy up to about 13.40 GPa using a diamond anvil cell at room temperature. The changes of lattice modes are interpreted as the crystal structure transformation. Three possible phase transitions, with the pressure increasing up to about 0.55, 3.67 and 11.10 GPa, are, respectively, elucidated as crystalline-to-crystalline, crystalline-to-amorphous transitions. A new material formed when the pressure is up to above 11.10 GPa remains stable after the pressure is released.     

Experimental constraints on the phase diagram of titanium metal

The phase transformations of titanium metal have been studied at temperatures and pressures up to 973 K and 8.7 GPa using synchrotron X-ray diffraction. The equilibrium phase boundary of the α-ω transition has a dT/dP slope of 345 K/GPa, and the transition pressure at room temperature is located at 5.7 GPa. The volume change across the α-ω transition is ΔV=0.197 cm³/mol, and the associated entropy change is ΔS=0.57 J/mol K. Except for ΔV, our results differ substantially from those of previous studies based on an equilibrium transition pressure of 2.0 GPa at room temperature. The α-ω-β triple point is estimated to be at 7.5 GPa and 913 K, which is comparable with previous results obtained from differential thermal analysis and resistometric measurements. An update, more accurate phase diagram is established for Ti metal based on the present observations and previous constraints on the α-β and ω-β phase boundaries.     

Pressure dependence of the optical-absorption edge of AlN and graphite-type BN

Effect of pressure on the band gaps on AlN and graphite-type BN (g-BN) has been studied up to 2.7 GPa at room temperature by measuring the optical-absorption edge of single crystals of each substance pressurized in a sapphire-anvil cell. The direct band gap of AlN shifted towards higher energy at a rate of 49±1 meV/GPa, whereas in g-BN the pressure dependence of the band gap was −36±1 meV/GPa. The results are compared with existing first-principles calculations.     

Equation of state and thermal stability of Al3BC

The lattice parameters of Al₃BC have been measured up to 5 GPa at ambient temperature using energy-dispersive X-ray powder diffraction with synchrotron radiation. A fit to the experimental p-V data using Birch-Murnaghan equation of state gives values of the Al₃BC bulk modulus 116(4) GPa and its first pressure derivative 9(2). In the 1.6-4.8 GPa range at temperatures above 1700 K Al₃BC undergoes incongruent melting that results in the formation of Al₃BC₃, AlB₂ and liquid aluminum.     

Equation of state of graphite-like BC

The compressibility of turbostratic boron-substituted graphite (t-BC) was measured up to 12 GPa at room temperature using energy-dispersive X-ray powder diffraction with synchrotron radiation. A fit to the experimental p-V data using Birch-Murnaghan equation of state gives values of the t-BC bulk modulus 23(2) GPa and its pressure derivative 8.0(6). These values point to a higher compressibility of t-BC as compared to turbostratic graphite.     

Synchrotron X-ray diffraction and absorption studies of CeM2X2 (M=Cu, Ni and X=Si, Ge) at high pressure

The equations of state of CeCu₂Si₂ and CeCu₂Ge₂ to about 60 GPa, as well as that of CeNi₂Ge₂ to 22 GPa and the valence state of Ce in CeCu₂Ge₂ to 20 GPa have been studied at room temperature in a diamond-anvil cell using synchrotron radiation sources. In each compound, the ambient-pressure phase (tetragonal ThCr₂Si₂-type structure) persisted to the highest pressure studied. The unit cell volumes of CeNi₂Ge₂ at ∼5 GPa and CeCu₂Ge₂ at ∼7 GPa, respectively, approached that of CeCu₂Si₂ taken at ambient pressure. From the equation-of-state data, the bulk modulus was derived to be 112.0±5.1 GPa for CeCu₂Si₂, 125.6±4.3 GPa for CeCu₂Ge₂, and 178.4±14.3 GPa for CeNi₂Ge₂. The valence state of Ce in CeCu₂Ge₂ remained trivalent throughout the pressure range investigated.     

High pressure X-ray diffraction study of ReS2

The high-pressure behavior of rhenium disulfide (ReS₂) has been investigated to 51.0 GPa by in situ synchrotron X-ray diffraction in a diamond anvil cell at room temperature. The results demonstrate that the ReS₂ triclinic phase is stable up to 11.3 GPa, at which pressure the ReS₂ transforms to a new high-pressure phase, which is tentatively identified with a hexagonal lattice in space group P6?m2. The high-pressure phase is stable up to the highest pressure in this study (51.0 GPa) and not quenchable upon decompression to ambient pressure. The compressibility of the triclinic phase exhibits anisotropy, meaning that it is more compressive along interlayer directions than intralayer directions, which demonstrates the properties of the weak interlayer van der Waals interactions and the strong intralayer covalent bonds. The largest change in the unit cell angles with increasing pressures is the increase of β, which indicates a rotation of the sulfur atoms around the rhenium atoms during the compression. Fitting the experimental data of the triclinic phase to the third-order Birch-Murnaghan EOS yields a bulk modulus of K_OT=23±4 GPa with its pressure derivative K_OT′= 29±8, and the second-order yields K_OT=49±3 GPa.     

Ball milling synthesis and stability under pressure in nanostructured HITPERM alloys

The main aim of the present work is to study the synthesis and stability of soft-magnetic nanostructured materials under high pressure-high temperature conditions. HITPERM alloy powders were prepared by high-energy ball-milling. The as-milled alloys consist of an iron-based nanocrystalline solid solution. The evolution of crystallinity and grain-size during the ball-milling process and investigations under external pressure up to 3 GPa for temperatures up to 1200 °C were evaluated using synchrotron radiation X-ray diffraction.     

In situ X-ray observation of phase transformation in Fe2O3 at high pressures and high temperatures

A laser-heated sample in a diamond anvil cell and synchrotron X-ray radiation was used to carry out structural characterization of the phase transformation of Fe₂O₃ at high pressures (30-96 GPa) and high temperature. The Rh₂O₃(II) (or orthorhombic perovskite) structure transforms to a new phase, which exhibits X-ray diffraction data that are indicative of a CaIrO₃-type structure. The CaIrO₃-type structure exhibited an orthorhombic symmetry (space group: Cmcm) that was stable at temperatures of 1200-2800 K and pressure of 96 GPa (the highest pressure used). Unambiguous assignment of such a structure requires experimental evidence for the presence of two Fe species. Based on the equation of state of gold, the phase boundary of the CaIrO₃-type phase transformation was P (GPa)=59+0.0022×(T−1200) (K).     

In situ high-pressure X-ray diffraction study of densification of a molecular chalcogenide glass

Structural mechanisms of densification of a molecular chalcogenide glass of composition Ge_2.5As_51.25S_46.25 have been studied in situ at pressures ranging from 1 atm to 11 GPa at ambient temperature as well as ex situ on a sample quenched from 12 GPa and ambient temperature using high-energy X-ray diffraction. The X-ray structure factors display a reduction in height of the first sharp diffraction peak and a growth of the principal diffraction peak with a concomitant shift to higher Q-values with increasing pressure. At low pressures of at least up to 5 GPa the densification of the structure primarily involves an increase in the packing of the As₄S₃ molecules. At higher pressures the As₄S₃ molecules break up and reconnect to form a high-density network with increased extended-range ordering at the highest pressure of 11 GPa indicating a structural transition. This high-density network structure relaxes only slightly on decompression indicating that the pressure-induced structural changes are quenchable.     

The bulk modulus of SmFeAs(O0.93F0.07)

The crystal structure of SmFeAs(O_0.93F_0.07) has been investigated under high pressure (up to ∼9 GPa) by means of synchrotron powder diffraction analysis followed by Rietveld refinement. The bulk modulus was calculated (K₀ = 103 GPa) using a 3rd order Birch–Murnaghan equation of state and resulted in quite good agreement with theoretical calculations reported for LaFeAsO. The linear compressibilities β_a and β_c are 2.11(4) and 4.56(7) × 10⁻³ GPa⁻¹, respectively.     

Resistance anomaly and structural disorder in NiSi2 under high pressure

Results of X-ray diffraction, electrical resistance, thermoelectric power measurements and electronic band structure calculations on NiSi₂ under high pressure are reported. The thermoelectric power (TEP) changes sign near 0.5 GPa (from +30 to −20 μV/K). As the pressure is increased, the value of TEP increases further in magnitude and near 7 GPa it becomes −50 μV/K. The pressure vs. resistance curve measured up to 30 GPa using diamond anvil (DAC)-based technique exhibits a broad hump near 12 GPa and exhibits hysteresis on pressure release. The ADXRD patterns up to 42 GPa show a gradual irreversible loss of long-range order in NiSi₂ with the diffraction lines progressively broadening under pressure. The FWHM of the diffraction lines show a rapid increase in the half-widths close to 0.5 GPa and also near 12 GPa. The computed band structure at a compression (without any disorder) corresponding to 12 GPa, exhibits an electronic topological transition (ETT). The rapid increase in disorder above 12 GPa implies that the ETT may be facilitating the structural disorder. It is suggested that the pressure drives the material through a region of entropic and energetic barriers and induces disorder in the material.     

Equation of state of silicon nitride carbodiimide Si2CN4

The lattice parameters of silicon nitride carbodiimide Si₂CN₄ have been measured up to 8 GPa at room temperature using energy-dispersive X-ray powder diffraction with synchrotron radiation. A fit of the experimental p-V data to the Birch-Murnaghan equation of state yields the values of the bulk modulus of 8.8(2) GPa and its first pressure derivative of 3.4(1). The compression is found to be anisotropic, with the b-axis being significantly more compressible than the a-and c-axes.     

High pressure X-ray diffraction study of potassium azide

Crystal structure and compressibility of potassium azide was investigated by in-situ synchrotron powder X-ray diffraction in a diamond anvil cell at room temperature up to 37.7 GPa. In the body-centered tetragonal (bct) phase, an anisotropic compressibility was observed with greater compressibility in the direction perpendicular to the plane containing N₃⁻ ions than directions within that plane. The bulk modulus of the bct phase was determined to be 18.6(7) GPa. A pressure-induced phase transition may occur at 15.5 GPa.     

Electrical conductivity and amorphization of Sc2(WO4)3 at high pressures and temperatures

Impedance spectroscopy measurements and synchrotron X-ray diffraction studies of Sc₂(WO₄)₃ at 400°C have been carried out as a function of pressure up to 4.4 GPa. Ionic conductivity shows normal decrease with increase in pressure up to 2.9 GPa, but then increases at higher pressures. The XRD results show that Sc₂(WO₄)₃ undergoes pressure-induced amorphization at pressures coincident with the reversal in conductivity behavior. The loss of crystal structure at high pressure is consistent with growing evidence of pressure-induced amorphization in negative thermal expansion materials, such as Sc₂(WO₄)₃. The increase in conductivity in the amorphized state is interpreted as the result of an increase in structural entropy and a concomitant reduction of energy barriers for ionic transport.