LECTRONIC STRUCTURE STUDIES OF Bi2Sr2CaCu2-xSnxO8+δ SYSTEM

Photoemission measurements have been carried out for Bi₂Sr₂CaCu_2-xSn_xO_8+δ system with conventional x-ray photoemission spectroscopy for core-level spectra and synchrotron radiation photoemission spectroscopy for valence band. With Sn doping, all core levels shift differently in binding energy, and the intensity near fermi energy becomes smaller in valence hand. From the experiment, we can deduce that the shifts of all core levels and valence hands may involve some other mechanisms, such ms electrostatic effects, in addition to binding energy referencing effects. We argue that the chemical environment plays a crucial role in the electronic structure of high-temperature superconductors.     

Fiske steps in surface intrinsic Josephson junctions of Bi2Sr2CaCu2O8+δ single crystals

Current－voltage characteristics of the surface intrinsic Josephson junctions under a magnetic field parallel to CuO_2 planes have been studied experimentally. Fiske steps in such a junction have been observed. The Swihart velocity for the junction is found to be 7.2×10^5m/s, which corresponds to the velocity mode of a single junction.     

Anisotropy of Electronic Spin Texture in the High-Temperature Cuprate Superconductor Bi2Sr2CaCu2O8+δ

Seeking new order parameters and the related broken symmetry and studying their relationship with phase transition have been important topics in condensed matter physics. Here, by using spin-and angle-resolved photoemission spectroscopy, we confirm the helical spin texture caused by spin-layer locking in the nodal region in the cuprate superconductor Bi₂Sr₂CaCu₂O_8+δ and discover the anisotropy of spin polarizations at nodes along Γ –X and Γ –Y directio...     

Superconductivity and critical fields in undoped and Sn-doped MoSr2YCu2O8−δ

Samples with nominal compositions MoSn_xSr₂YCu₂O_8−δ (0 ? x ? 0.075) were synthesized and their superconducting and magnetotransport properties were investigated. It was established that the optimum Sn-doping (x = 0.02 and 0.03) increases the T_c of the undoped MoSr₂YCu₂O_8−δ. The upper critical fields of the samples were determined using magnetization, susceptibility and resistivity measurements. It was established that the Sn-doping weakly affects the first and the intragrain second critical field of Mo-1212 but enhances the extrapolated to T = 0 (i.e. the intergrain) upper critical field. The observed phenomena were discussed on the basis of the Josephson-junction-arrays model. A phenomenological expression describing the temperature dependency of the susceptibility of Mo-1212 was found.     

不同氧含量Bi2Sr2CaCu2O８+δ单晶电阻率的各向异性

精确测量了在不同氧压下退火的单晶Bi₂Sr₂CaCu₂O_8+δ(Bi2212)样品的Cu-O面内和Cu-O面外的电阻率ρ_c(T)和ρ_ab(T).发现ρ_c(T)和各向异性比(ρ_c(T)/ρ_ab(T))随着载流子浓度增加而迅速下降.在过掺杂样品中,高于120K时,ρ_c随温度线性下降,而各向异性 关键词：     

在H2气氛中Bi2Sr2CaCu2O8+δ的热处理效应

对高品质单相多晶Bi₂Sr₂CaCu₂O_8+δ样品作真空或H₂气氛中不同温度下的热处理。由X射线结构分析,其正常态和超导态性质(特别是载流子浓度)的系统测量结果表明:Bi₂Sr₂CaCu₂0_8+δ样品在H₂气氛中热处理,其氧的释放可分为两个阶段:一是Bi-O层之间的过量氧原子的逸出,降低系统的载流子浓度,从而调节T_c;二是CuO₂面内氧原子的迁移,产生氧空位,使CuO₂面内Cu²⁺的短程二维反铁磁(2D-AFM)有序背景遭到破坏。可以认为:以往文献中报道的Bi₂Sr₂CaCu₂O_8+δ超导体的吸氢效应导致T_c的变化,很可能主要的并不是氢原子的电子掺杂行为,而是与吸氢过程中氧含量的变化相联系。 关键词：     

Bi2Sr2CaCu2-xSnxO8+δ系列 超导体的XRD和XPS研究

实验研究了Bi₂Sr₂CaCu_2-xSn_xO_8+δ 的X射线衍射(XRD)和光电子能谱(XPS).实验发现随着掺杂(Sn)量的增加,晶格参数a 和c都有所变化,O1s和Cu2p芯能级谱也发生了变化.实验结果表明： 在低掺杂量时,Sn主要 呈二价态;而在高掺杂浓度时呈四价态;掺Sn对超导电性的影响与其他元素的掺杂不同.这 些实验结果支持化学环境在高温超导样品的电子结构中起着重要作用的结论. 关键词： Bi系超导体 掺杂 X射线衍射 光电子能谱     

Bi2Sr2CaCu2O8+y掺Na样品的超导机制

用熔融法制备了Bi₂Sr₂CaCu₂O_8+y掺Ｎａ多晶样品，转变温度Ｔ_c提高到９０Ｋ以上，最大的零电阻温度达到９２．５Ｋ。在流动氧气退火后，未掺Ｎａ样品Ｔ_c显著降低，而掺Ｎａ样品Ｔ_c几乎不变，说明二者Ｔ_c提高具有不同的机制。据此我们认为Ｎａ替代了Ｂｉ而使Ｂｉｏ层电荷失去平衡，Ｃｕｏ面上电子转移到Ｂｉｏ层而形成空穴，空穴和电子的吸引相 关键词：     

Bi2Sr2CaCu2O8的晶体结构与超导性能

本文研究了Bi-Sr-Ca-Cu-O体系中理想成份为Bi₂Sr₂CaCu₂O₈化合物的超导性能和晶体结构。名义成份为BiSrCaCu₂O_5.5零电阻超导转变温度T_c(0)=81.5K。用X射线粉末衍射方法测定了Bi₂Sr₂CaCu₂O₈的晶体结构,其基本结构属体心四方晶系,空间群为D_4h¹⁷-l4/mmm,点阵常数a=3.825?,c=30.82?。每单胞化合式单位为2.2Ca占据2(a)等效点系,4Sr,4Bi和4Cu占据三组4(e)位置,其原子参数z分别为0.110,0.302和0.445,16O分别占据8(g),z=0.445和二组4(e),z=0.210和0.380。Bi₂Sr₂CaCu₂O₈晶体结构可认为是阳离子沿z轴的(00z)和((1/2)(1/2)z)交错排列,由Aurivillius相导生出来的。讨论了在Bi-Sr-Ca-Cu-O体系中可能存在的其它沿z轴不同堆垛层数的超导相。 关键词：     

Pressure tuned crystal structure in NdBa2Cu3O6+δ superconductor

The high-pressure angle-dispersive X-ray diffraction experiments on the NdBa₂Cu₃O_6+δ superconductor were performed from ambient to above 30 GPa at room temperature. The structure analysis based on the Rietveld refinement methods shows the different pressure dependence for the bond length between the basal-plane copper of the pyramids to the apical oxygen (denoted Cu(2)–O(1)) and bond length between basal-plane copper to plane oxygen (denoted Cu(2)–O(2,3)). The ambient bulk modulus B₀ is derived as 127 GPa. A possible correlation between Cu(2)–O(1) and T_c was discussed.     

Hall effect and sign reversal in Gd(Ba2−xNdx)Cu3O7+δ

We have investigated the Hall measurement of Gd(Ba_2−xNd_x)Cu₃O_7+δ with x=0, 0.05, 0.1, 0.15, and 0.2 in a magnetic field of 0–1 T. The nominal samples has been prepared by the conventional solid-state reaction technique. The iodometric titration experiment was carried out for samples. The Rietveld analysis of the X-ray diffraction patterns indicates that samples are mainly single phase. The normal state Hall coefficient behaves as 1/T in all samples. All samples with nominal compositions show single sign reversal with variation of magnetic field and temperature. The Hall resistivity of the samples with x=0 and 0.1 close to the superconducting transition temperature changes its sign with decreasing temperature and tends to a minimum −Δ_max, and then monotonically goes to zero. The absolute value of −Δ_max decreases with the increase of magnetic field. This can be qualitatively explained by a model calculation based on the time-dependent Ginsburg–Landau theory.     

Continuously Doping Bi2Sr2CaCu2O8+δ into Electron-Doped Superconductor by CaH2 Annealing Method

As a typical hole-doped cuprate superconductor, Bi₂Sr₂CaCu₂O_8+δ(Bi2212) carrier doping is mostly determined by its oxygen content. Traditional doping methods can regulate its doping level within the range of hole doping.Here we report the first application of CaH₂ annealing method in regulating the doping level of Bi2212. By continuously controlling the anneal time, a series of differently doped samples can be obtained. The combined experime...     

Bi2Sr2CaCu2O8单晶中的反常尖锋效应

使用牛津震动样品磁强计(VSM)研究了Bi₂Sr₂CaCu₂O₈单晶的磁滞回线.在20到40K温度之间发现了反常的尖锋效应,随样品O含量的增加,发生尖锋效应的外场也相应提高.可以认为在尖峰效应处发生了由涡漩物质的有序固态到无序固态的相变,在有少量点缺陷存在的BSCCO单晶相图上,B_sp线终止于20K温度处,在20K以下温区没有发生准格子到涡漩玻璃的相变,涡漩固相始终以准格子形式存在;可以认为尖峰效 关键词： 2Sr₂CaCu₂O₈单晶')" href="#">Bi₂Sr₂CaCu₂O₈单晶 磁滞回线 尖锋效应 相变     

Sr doping effects on the transport and magnetic properties of GdBaCo2O5+δ

Studies on some new members of the cobalt perovskite Gd_1−xSr_xBaCo₂O_5+δ with low strontium concentrations (0<x<0.1) have been carried out with the aim of investigating possible metallization of the GdBaCo₂O_5+δ system by hole doping. Low temperature electrical resistivity, magnetic susceptibility and thermopower of the above system have been studied. The pristine compound with x=0 and δ∼0.5 exhibits a semiconductor-like behavior and two magnetic transitions below room temperature. Upon Sr²⁺ substitution, there is a fall in resistivity by 2-3 orders of magnitude at low temperature and also a dramatic reduction in the ferromagnetic to antiferromagnetic transition temperature. These changes can be explained on the basis of hole doping (and increase in the Co⁴⁺content). Evidence for an increase in Co⁴⁺ with Sr²⁺ substitution is provided by iodometric analysis.     

Thermodynamic parameters of Bi2Sr2CaCu2O8+δ thin film prepared by molecular beam epitaxy

Bi₂Sr₂CaCu₂O_8+δ (Bi2212) thin film is an important superconducting material ascribed to its high transition temperatures and low toxicity, but the application of Bi2212 thin films is limited due to the appearances of intergrowth and impurity phases. To achieve high-quality Bi2212 thin film by molecular beam epitaxy (MBE), the oxidizing gas pressure and substrate temperature are the key parameters. Here, the phase formation in Bi-based thin films grown by MBE was studied as a function of oxidizing gas pressure and substrate temperature. Furthermore, the thermodynamic parameters have been investigated through enthalpy change. This study indicates that the substrate temperature was increased with the enhancing of ozone partial pressure when the composition ratio is fixed, Bi2212 single phase can be formed. Moreover, the chemical stability decreases in the order of Bi₂Sr₂CuO_6+δ > Bi2212 > Bi₂Sr₂Ca₂Cu₃O_10+δ.     

Bi2Sr2CaCu2O8超导单晶中的电阻反常行为

测量了Bi₂Sr₂CaCu₂O₈单晶的ab面和c轴方 向电阻,在其超导转变温度附近发现了反常的电阻峰出现.其随外磁场(>100Gs)和电流的增 加而逐渐消失.文章认为这个反常的电阻峰是由于单晶中超导相的不均匀分布而导致的准再 进入行为. 关键词： 2Sr₂CaCu₂O₈单晶')" href="#">Bi₂Sr₂CaCu₂O₈单晶 反常电阻峰 准再入行为     

Pairing modulations and phase separation instabilities in Bi2Sr2CaCu2O8 + δ

There is growing evidence that the unconventional spatial inhomogeneities in the doped high-_Tc$T_c$ superconductors are accompanied by the pairing of electrons, subsequent phase transitions and condensation into coherent states. We show that such pairing states can be obtained from phase separation instabilities near level crossings. Conditions for coherent pairing instabilities are examined using exact diagonalization of Hubbard-like pyramid structures under variation of coupling and interaction strengths. We also evaluate the behavior of the energy charge gap in the vicinity of level crossings using a parametrization of coupling to the apical site to represent out-of-plane effects. These results provide a simple microscopic explanation of (correlation induced) supermodulation of the coherent pairing gap observed in scanning tunneling microscopy measurements at atomic scale in Bi₂Sr₂CaCu₂O_8 + δ.     

Bi2Sr2CaCu2O8单晶a-b平面热电势率的各向异性

测量了Bi₂Sr₂CaCu₂O₈单晶a方向的热电势率S_a和b方向的热电势率S_b与温度T的关系,发现在a-b平面内热电势率存在各向异性。认为S_a与S_b的差异来源于b方向的调制结构,并用扩散热电势率S_d,声子曳引热电势率S_g和相关跳跃热电势率S_h三种贡献,对实验结果进行了 关键词：     

Electronic Evolution from the Parent Mott Insulator to a Superconductor in Lightly Hole-Doped Bi2Sr2CaCu2O8+σ

High temperature superconductivity in cuprates is realized by doping the Mott insulator with charge carriers. A central issue is how such an insulating state can evolve into a conducting or superconducting state when charge carriers are introduced. Here, by in situ vacuum annealing and Rb deposition on the Bi₂Sr₂Ca_0.6Dy_0.4Cu₂O_8+σ(Bi2212) sample surface to push its doping level continuously from deeply underdoped(T_c = 25...