Monolithically integrated bacteriorhodopsin-GaAs/GaAlAs phototransceiver

A monolithically integrated bacteriorhodopsin-semiconductor phototransceiver is demonstrated for the first time to the authors' knowledge. In this novel biophotonic optical interconnect, the input photoexcitation is detected by bacteriorhodopsin (bR) that has been selectively deposited onto the gate of a GaAs-based field-effect transistor. The photovoltage developed across the bR is converted by the transistor into an amplified photocurrent, which drives an integrated light-emitting diode with a Ga0.37Al0.63As active region. Advantage is taken of the high-input impedance of the field-effect transistor, which matches the high internal resistance of bR. The input and output wavelengths are 594 and 655 nm, respectively. The transient response of the optoelectronic circuit to modulated input light has also been studied.     

脉冲γ射线诱发N型金属氧化物场效应晶体管纵向寄生效应开启机制分析

金属氧化物场效应晶体管作为大规模数字电路的基本单元,其内部的寄生效应一直以来被认为是影响集成电路在脉冲γ射线辐射环境中发生扰动、翻转以及闩锁的重要因素.为研究脉冲γ射线诱发N型金属氧化物场效应晶体管内部纵向寄生效应的开启机制,通过TCAD构建了40, 90以及180 nm 3种不同工艺节点的NMOS晶体管进行瞬时电离辐射效应仿真,得到了纵向寄生三极管电流增益随工艺节点的变化趋势、纵向寄生三极管的开启条件及其对NMOS晶体管工作状态的影响.结果表明:1)脉冲γ射线在辐射瞬时诱发NMOS晶体管内部阱电势抬升是导致纵向寄生三极管开启的主要原因; 2)当纵向寄生三极管导通时, NMOS晶体管内部会产生强烈的二次光电流影响晶体管的工作状态; 3) NMOS晶体管内部纵向寄生三极管的电流增益随工艺节点的减小而减小.研究结果可为电子器件的瞬时电离辐射效应机理研究提供理论依据.     

Investigation solution to improve the irradiation reliability of SOI NMOSFET

A solution is developed to improve the irradiation reliability of SOI NMOSFET(N-type Metal Oxide Semiconductor Field Effect Transistor).This solution,including SOI(Silicon On Insulator)wafer hardening and transistor structure hardening,protects the SOI circuit from total dose irradiation effect.     

Investigation on a solution to improve the irradiation reliability of SOI NMOSFET

A solution is developed to improve the irradiation reliability of SOI NMOSFET (N-type Metal Oxide Semiconductor Field Effect Transistor). This solution, including SOI (Silicon On Insulator) wafer hardening and transistor structure hardening, protects the SOI circuit from total dose irradiation effect.     

Influence of gamma ray radiation on two-dimensional sub-threshold current of strained Si nano NMOSFET

ABSTRACT

The carrier transport in uniaxial strained Si N channel metalvn oxide semiconductor field effect transistor (NMOSFET) irradiated by gamma rays is analyzed. Based on the total dose irradiation effect, an analytical model of two-dimensional sub-threshold current for differential capacitance of uniaxial strained Si Nano NMOSFET is established. Based on this model, numerical calculation is carried out by MATLAB. The influence of geometric parameters and total dose on differential capacitance is simulated. Meanwhile, the simulation results match the experiment result very well, which validates the accuracy of the model. Therefore, the model provides a good reference for the irradiation reliability of uniaxial strained Si nano NMOSFET and the application of strained integrated circuits.     

0.18 μm部分耗尽绝缘体上硅互补金属氧化物半导体电路单粒子瞬态特性研究

利用脉冲激光入射技术研究100级0.18 μm部分耗尽绝缘体上硅互补金属氧化物半导体反相器链的单粒子瞬态效应, 分析了激光入射器件类型及入射位置对单粒子瞬态脉冲传输特性的影响. 实验结果表明, 单粒子瞬态脉冲在反相器链中的传输与激光入射位置有关, 当激光入射第100级到第2级的n型金属-氧化物-半导体器件, 得到的脉冲宽度从287.4 ps增加到427.5 ps; 当激光入射第99级到第1级的p型金属-氧化物-半导体器件, 得到的脉冲宽度从150.5 ps增加到295.9 ps. 激光入射点靠近输出则得到的瞬态波形窄; 靠近输入则得到的瞬态波形较宽, 单粒子瞬态脉冲随着反相器链的传输而展宽. 入射器件的类型对单粒子瞬态脉冲展宽无影响. 通过理论分析得到, 部分耗尽绝缘体上硅器件浮体效应导致的阈值电压迟滞是反相器链单粒子瞬态脉冲展宽的主要原因. 而示波器观察到的与预期结果幅值相反的正输出脉冲, 是输出节点电容充放电的结果.     

Holographic simultaneous readout polarization multiplexing based on photoinduced anisotropy in bacteriorhodopsin

Bacteriorhodopsin (bR) is a reversible photochromic protein that can be used as a holographic medium. The dichroic absorption of the bR molecule is polarization dependent, thereby allowing for the recording of polarization holograms. The properties of polarization holograms can be used to multiplex two independent images in a single bR film. A new technique and associated polarization-multiplexing scheme are demonstrated that allow for simultaneous readout of two orthogonally polarized images while achieving a high normalized diffraction efficiency for each of the individual images.     

A New Wavelength Selective Photoreceiver

A new kind of wavelength selective photoreceiver is proposed. It was constructed by a Fabry-Perot (F-P) etalon filter and a resonant cavity enhanced (RCE) photodetector. The photoreceiver′s spectral response is determined by the F-P etalon filter with a FWHM of less than 4 nm. Moreover, with such a photoreceiver, the transmission loss of the F-P etalon filter can be compensated to some extent. And this will benefit its applications.     

菌紫质光致变色吸收特性的二能级理论研究

采用二能级模型(B态和M态)简化菌紫质(bR)光循环过程,建立了菌紫质光致变色吸收特性的数学方程,数值计算了bR膜对570nm单光束和对570nm与412nm双光束的吸收特性.计算表明,bR膜的光吸收特性与入射光波长、入射光强、摩尔消光系数、光密度和M态寿命有很大的关系.bR膜用于光存储时,读出光强和M态寿命是影响bR读出使用时间的两个重要因素.570nm与412nm双光束作用于bR膜时,可以实现以光控光操作,但由于570nm黄光的透过动态范围要比412nm紫光的透过动态范围大得多,因而在实际应用中应以黄光作为信息光,紫光作为控制光.基于bR膜对黄、紫光束的吸收特性,可以将其应用于亮背景滤除、反象器、图象相减、光寻址空间光调制器等光信息处理领域.     

An all-optical time-delay relay based on a bacteriorhodopsin film

Using a special property of dynamic complementary-suppression-modulated transmission （DCSMT） in the bacteriorhodopsin （bR） film, we have demonstrated an all-optical time-delay relay. To extend our work, the relationship between the delay time of the all-optical time-delay relay and parameters of a bR film is numerically studied. We show how the delay time changes with the product of concentration and thickness （PCT） of a bR film. Furthermore, the shortest and longest delay times are given for the relay of ＇switch off. The saturable delay time and maximum delaytime of ＇switch on＇ are also given. How the wavelengths （632.8, 568, 533 and 412 nm） and intensities of the illuminating light influence the delay time is also discussed. The simulation results are useful for optimizing the design of all-optical time-delay relays.     

深亚微米金属氧化物场效应晶体管及寄生双极晶体管的总剂量效应研究

为从工艺角度深入研究航空航天用互补金属氧化物半导体(CMOS)工艺混合信号集成电路总剂量辐射损伤机理, 选取国产CMOS 工艺制作的NMOS晶体管及寄生双极晶体管进行了⁶⁰Coγ射线源下的总剂量试验研究. 发现: 1) CMOS工艺中固有的寄生效应导致NMOS晶体管截止区漏电流对总剂量敏感, 随总剂量累积而增 大; 2) 寄生双极晶体管总剂量损伤与常规双极晶体管不同, 表现为对总剂量不敏感, 分析认为两者辐射损伤的差异来源于制作工艺的不同; 3)寄生双极晶体管与NMOS晶体 管的总剂量损伤没有耦合效应; 4)基于上述研究成果, 初步分析CMOS工艺混合信号集成电路中数字模块及模拟模块辐射损伤机制, 认为MOS晶体管截止漏电流增大是导致数字模块功耗增大的主因, 而Bandgap电压基准源模块对总剂量不敏感源于寄生双极晶体管抗总剂量辐射的能力. 关键词： 总剂量效应 N沟道金属氧化物场效应晶体管 寄生双极晶体管 Bandgap基准电压源     

环栅肖特基势垒金属氧化物半导体场效应管漏致势垒降低效应研究

结合环栅肖特基势垒金属氧化物半导体场效应管(MOSFET)结构, 通过求解圆柱坐标系下的二维泊松方程得到了表面势分布, 并据此建立了适用于低漏电压下的环栅肖特基势垒NMOSFET阈值电压模型.根据计算结果, 分析了漏电压、沟道半径和沟道长度对阈值电压和漏致势垒降低的影响, 对环栅肖特基势垒MOSFET器件以及电路设计具有一定的参考价值. 关键词： 环栅肖特基势垒金属氧化物半导体场效应管 二维泊松方程 阈值电压模型 漏致势垒降低     

Dynamic diffraction behaviors of bacteriorhodopsin film at 532 nm

To show the relations between dynamic diffraction behaviors of two coupled waves and parameters of bacteriorhodopsin (bR) film, we presented a model of numerical simulation, in which the thermal effect is considered. Using wavelength of 532 nm, the relations between dynamic diffraction behaviors and parameters of bR film are revealed and the numerical results are in good agreement with the experimental ones. For different incident intensities, the higher the intensity, the lower the stable normalized diffraction intensity. For different bR molecular concentrations in the M state, the higher the molecular concentration, the higher the stable value of normalized diffraction intensity. For different thickness of bR film, the larger the thickness, the higher the stable value of normalized diffraction intensity. For different lifetime in the M state, the longer the lifetime of the M state, the lower the stable value of normalized diffraction intensity. The normalized diffraction intensity with low stable value corresponds to its fast rising and decaying rate.     

A New Wavelength Selective Photoreceiver

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细菌视紫红质膜非线性吸收特性及其光子学应用

对细菌视紫红质膜在两束非同频光照射下的非线性吸收特性进行了详细的理论分析,并讨论了细菌视紫红质膜非线性吸收特性有光子学方面的一些新应用。     

Analytic model for ZnO-thin film transistor under dark and UV illumination

A ZnO thin film transistor (TFT) was fabricated on a SiO₂/Si substrate by sol-gel method. Electrical characteristics of the zinc oxide transistor under various illuminations were analyzed. We have developed a method to extract the TFT parameters under dark and under UV illuminations. This component requires an ohmic source and drain contacts for ideal operation. The performance of electronic-device is often limited by injection. In many real situations, the injection of charge carriers from metals into semiconductors is non-linear. This paper deals with the effects of non-ohmic contacts on the modeling of ZnO thin film transistor and gives specific rules on how to extract the real transistor parameters using only electrical measurements under dark and illumination.We have extracted the TFT parameters using developed method from output characteristics under dark and UV illumination. The drain current of the ZnO thin film transistor under UV illumination is improved. We have demonstrated that the UV illumination reduce the total resistance and improve the performance of the transistor.     

超深亚微米互补金属氧化物半导体器件的剂量率效应

对0.18 μm互补金属氧化物半导体(CMOS)工艺的N型金属氧化物半导体场效应晶体管(NMOSFET)及静态随机存储器(SRAM)开展了不同剂量率下的电离总剂量辐照试验研究. 结果表明: 在相同累积剂量, SRAM的低剂量率辐照损伤要略大于高剂量率辐照的损伤, 并且低剂量率辐照损伤要远大于高剂量率辐照加与低剂量率辐照时间相同的室温退火后的损伤. 虽然NMOSFET 低剂量率辐照损伤略小于高剂量率辐照损伤, 但室温退火后, 高剂量率辐照损伤同样要远小于低剂量率辐照损伤. 研究结果表明0.18 μm CMOS工艺器件的辐射损伤不是时间相关效应. 利用数值模拟的方法提出了解释CMOS器件剂量率效应的理论模型.     

细菌视紫红质的动态透射特性及其应用

细菌视紫红质 (Bacteriorhodopsin,简称 b R)是由嗜盐菌中提取出的一种光敏蛋白质 ,它是一种新型的生物光子学材料。我们测量的 b R膜在黄光和蓝光束分别照射下的非线性透射特性表明 ,在光照开始阶段 ,光的透过率随时间延长而增加 ,然后逐渐达到一个稳定值。黄光和蓝光的透过特性的不同是蓝光达到最大透过率的时间比黄光短。 b R膜在黄光和蓝光双光束同时照射下的非线性透射特性的计算结果表明 ,在某一固定蓝光光强 ,蓝光的透过光强随黄光强度的增加而减小 ,甚至变为零。这说明黄光对蓝光有抑制作用 ,即黄光可以调控蓝光的透过率。这一奇异的透射特性可以用做新出现事物滤波器     

细菌视紫红质的自衍射效率与最佳入射角研究

研究了弱光强下细菌视紫红质膜(bR膜)的自衍射特性.给出了弱光强下相干光在bR膜中产生的振幅光栅光强分布模型,并用ysinαx近似表示透射光强分布,结果与实验吻合.给出了不同透射光强y与指数α的对应关系.结果表明,在bR膜及入射光波波长给定的情况下,入射光强越小,对应的α值越大,当入射光强为0.072/T(mW/cm2)时,α等于1.计算出不同入射光强和入射角下的自衍射效率.结果发现,对应于最大衍射效率的最佳入射角为2°.     

65 nm互补金属氧化物半导体场效应和晶体管总剂量效应及损伤机制

对65 nm互补金属氧化物半导体工艺下不同尺寸的N型和P型金属氧化物半导体场效应晶体管(NMOSFET和PMOSFET)开展了不同偏置条件下电离总剂量辐照实验.结果表明:PMOSFET的电离辐射响应与器件结构和偏置条件均有很强的依赖性,而NMOSFET表现出较强的抗总剂量性能;在累积相同总剂量时,PMOSFET的辐照损伤远大于NMOSFET.结合理论分析和数值模拟给出了PMOSFET的辐射敏感位置及辐射损伤的物理机制.