Dendritic Growth of Potassium Dihydrogen Phosphate Crystals in Silica Gels

Dendritic growth of potassium dihydrogen phosphate (KDP) crystals in silica gels at room temperature is reported. Branching along directions perpendicular to the arms and dendrites growing in mutually perpendicular 〈100〉 and 〈010〉 directions are illustrated. Initial stages and surface of a dendrite are illustrated and described. Also explained are the crystallites growing on the dendrite which finally lead to the formation of platelets.     

KDP晶体中链状分布液相包裹体形成机制分析

利用光学显微镜和扫描电镜(SEM)观测了KDP晶体中出现的一种呈链状分布的液相包裹体,发现它们的尺寸从几个微米到几十个微米不等,主要沿晶棱方向排列.对这类包裹体的形成条件和形成机制分析发现,它们的形成与近年来新提出的KDP晶体棱边生长机制有关,讨论了KDP晶体生长过程中出现生长机制的可能原因.     

Na+对KDP晶体生长的影响

本文利用传统的降温法和"点籽晶"快速生长法在不同Na+掺杂浓度的溶液中生长KDP晶体,定量研究了Na+对KDP晶体生长的影响.实验发现:Na+的存在降低了溶液的稳定性,致使KDP晶体柱面容易扩展.Na+的存在对KDP晶体的光学性能基本没有影响.     

KDP/DKDP晶体生长的研究进展

采用传统降温法,KDP晶体的生长速度一般在1～2 mm/d,DKDP晶体的生长速度甚至更慢,并且晶体的恢复区域较大,利用率低;而采用快速生长法,晶体的生长速度可以提高到20～50 mm/d,并且晶体的恢复区域小,利用率高.本文回顾了KDP/DKDP晶体生长的研究进展.并重点评述了KDP/DKDP晶体快速生长的研究进展,报道了近年来大尺寸、高质量KDP晶体的研究动态.     

Investigation of the Structure of Crystal-Forming Solutions of Potassium Dihydrogen Phosphate K(H2PO4) (KDP type) on the Basis of Modeling Precursor Clusters and According to Small-Angle X-Ray Scattering Data

Crystallography Reports - The potassium dihydrogen phosphate K(H2PO4) (KDP) cluster structures formed in aqueous solutions have been theoretically and experimentally investigated. Cluster modeling...     

Influence of Dislocations in KDP Crystals on Laser Damage Threshold

The dislocation density in KDP crystals has been determined by X-ray diffraction topography (LANG method). A method for determining the laser damage thresholds in dependence on dislocation density is described. It is found that dislocations with a density about 10³ cm⁻² reduce the laser damage threshold up to a factor of two compared with perfect regions. It is shown that experimentally measured damage results can be explained theoretically.     

有机添加剂对KDP晶体生长及其光学性质影响的研究

本文研究了乙二胺四乙酸(EDTA)和氨三乙酸(ATA)对KDP晶体生长及其光学性质的影响,其中,后者是首次报导,两者表现相似的影响.随着添加剂含量的增大,晶体生长速度先增大后减小;添加添加剂溶液所生长的KDP晶体在紫外波段的透过率提高;研究还发现,270 nm处晶体透过率的主要影响因素包括过饱和度以及Fe3+和Cr3+含量;有机添加剂的添加和退火对电导率影响微弱.     

The Growth of KDP Crystals and its Mechanism by Splicing Misoriented in Aqueous Solution

The growing characteristics of splicing misoriented KDP seeds of both bulk and thin pieces were investigated. The chemical etching method was used to determine the prismatic and Z-plate surfaces of the crystals grown by splicing bulk KDP seeds. The X-ray Lang topography method was employed to measure original thin platy crystals grown by splicing thin pieces of KDP seeds. From the results it can be concluded that when the misorientation of two seeds on the Z-axis direction was about 1.5°, the crystal was grown successfully if the secondary capping was controlled properly. In comparison with the growth of splicing “parallel” seeds, the misorientation of both seeds increases such that the secondary capping becomes difficult, the sub-grain boundary stretches longer, the stress field around the secondary cap enlarges and the crystals grown crack easily.     

Growth of Triglycine Sulphate Single Crystals Doped by Cobalt (II) Phosphate

Modified TGS single crystals have been grown by doping with Cobalt (II) Phosphate in ferroelectric phase. The effects of different amounts of doping entities on the growth habit and P‐E hysteresis loop have been investigated. The experimental results show that while the spontaneous polarization P_s measured on variously doped crystals remains virtually unchanged, the coercive field values differ in dependence on the growth conditions and grown pyramidal features. The highest values of the coercive field E_c have been found to fall in the interval 800‐900 V/cm.     

金刚石大单晶中金属包裹体形态变化的研究

采用高温高压法对含有金属包裹体的金刚石大单晶进行了处理,发现在5.4 GPa的条件下,金属包裹体形态变化的温度区间与金刚石大单晶合成的温度区间具有一致性,约在1500 ～ 1650 K.在1525 ～1625 K这一温度范围内,金属包裹体随着温度的升高,其形态都有向球体变化的趋势,随着处理时间的延长,包裹体形态最终会趋于稳定.不同的温度条件下,包裹体的稳定形态也不同,但包裹体高温下的稳定形态具有一定的不可逆性,同时包裹体的稳定形态也与处理前晶体中包裹体的原始形态有关.红外光谱分析发现,处理前后金刚石中以孤氮为主的氮杂质存在形式未发生改变.     

Ni2+对KDP晶体生长及缺陷影响的研究

采用传统降温方法生长了不同Ni2+掺杂浓度的KDP晶体.实验发现当Ni2+掺杂浓度小于1000 ppm时溶液的稳定性随着掺杂浓度的增加而提高,大于1000 ppm时溶液的稳定性开始下降,但仍高于纯态溶液的稳定性;随着Ni2+浓度的增加KDP晶体柱面的生长死区增加,柱面的生长速度略有下降,但在生长过程中没有观察到晶体的楔化;KDP晶体的XRD分析及缺陷的研究表明Ni2+对晶体的结构影响不明显,但晶体中的缺陷和内应力增加.     

KDP晶体生长的溶液流动和物质输运计算

本文采用有限容积法,对KDP晶体生长过程中溶液的流动和物质输运进行了数值模拟.结果表明:随着入口溶液流动速度的增大,籽晶的上表面因自然对流而引起的抽吸作用减小,表面过饱和度的最小值沿x正向发生右移,其上表面的剪切力先减小后增大.随着入口溶液过饱和度的增大,籽晶上表面剪切力增大.不同尺寸的籽晶表面过饱和度的分布差异较大.籽晶的生长边界层厚度与溶液流动密切相关,入口溶液流动速度越大,厚度越小,但其受入口溶液过饱和度的影响较小.     

The Effect of Nonelectrolyte Additives with Hydrophilic and Hydrophobic Hydration on the Growth of KDP Crystals from Aqueous Solutions

Crystallography Reports - The effect of nonelectrolyte additives with hydrophilic and hydrophobic hydration on the growth of potassium dihydrogen phosphate (KH2PO) crystals in the kinetic mode at...     

KDP晶体(101)面生长动力学研究

晶体法向生长速度是晶体生长动力学研究的-个重要参数.用激光偏振干涉法实现了KDP晶体锥面生长速度的实时测量,发现KDP晶体锥面生长过程中存在与柱面类似的死区,对传统降温法生长大尺寸KDP晶体和点籽晶快速生长技术中过饱和度的控制有重要指导意义.用螺旋位错模型讨论了锥面生长的动力学规律.计算了锥面台阶自由能和动力学系数.     

大尺寸CLBO单晶的生长和性质研究

本文对生长大尺寸硼酸铯锂(CsLiB6O10,简称CLBO)单晶的生长工艺进行了探索研究,采用顶部籽晶泡生法生长出尺寸为70×25mm的CLBO透明晶体.测量了晶体的干涉图,计算其折射率变化为Δn～1.2×10-5,晶体的光学质量接近于玻璃水平(～10-6).测量CLBO单晶的结构及其光学特性.用15mm×10mm×7mm的CLBO样品,在锁模Nd:YAG激光器上做倍频实验,获得了波长为532nm的倍频光,其转换效率高达60;以上.     

KDP晶体体缺陷和损伤的观测方法研究

采用激光散射诊断法和显微镜相衬法对磷酸二氢钾(KH2PO4、KDP)晶体中的缺陷和损伤进行观测,发现散射法可以对晶体中的缺陷和损伤进行灵敏观测,并可以即时判断损伤;而显微镜相衬法可以对损伤形貌清晰观测,两种方法结合使用可以更好地观测晶体的缺陷和损伤并有助于了解晶体损伤的机理.     

Influence of Additives and Surface Topography on the Alignment of Nematic Liquid Crystals

Observations of the influence of a simultaneous action of different surface topographies and polar or nonpolar additives in small concentration on the alignment properties of liquid crystal molecules are reported. The additive dependence of the threshold behaviour of planar aligned liquid crystal cells is also studied.