PLD-assisted VLS growth of aligned ferrite nanorods, nanowires, and nanobelts-synthesis, and properties

We report here a systematic synthesis and characterization of aligned alpha-Fe2O3 (hematite), epsilon-Fe2O3, and Fe3O4 (magnetite) nanorods, nanobelts, and nanowires on alumina substrates using a pulsed laser deposition (PLD) method. The presence of spherical gold catalyst particles at the tips of the nanostructures indicates selective growth via the vapor-liquid-solid (VLS) mechanism. Through a series of experiments, we have produced a primitive "phase diagram" for growing these structures based on several designed pressure and temperature parameters. Transmission electron microscopy (TEM) analysis has shown that the rods, wires, and belts are single-crystalline and grow along <111>m or <110>h directions. X-ray diffraction (XRD) measurements confirm phase and structural analysis. Superconducting quantum interference device (SQUID) measurements show that the iron oxide structures exhibit interesting magnetic behavior, particularly at room temperature. This work is the first known report of magnetite 1D nanostructure growth via the vapor-liquid-solid (VLS) mechanism without using a template, as well as the first known synthesis of long epsilon-Fe2O3 nanobelts and nanowires.     

Ga2O3 and GaN nanocrystalline film: reverse micelle assisted solvothermal synthesis and characterization

Gallium oxide (beta-Ga2O3) nanoparticles were successfully deposited on quartz glass substrates using sodium bis(2-ethylhexyl) sulfosuccinate (AOT)/n-hexane/ethylene glycol monomethyl ether (EGME) reverse micelle-mediated solvothermal process with different omega values. The mean diameter of Ga2O3 particles was approximately 2-3 nm and found to be approximately independent of omega values of the reverse micelles. However, when the Ga2O3 nanocrystalline films were nitrided at 900 degrees C under flowing NH3 atmosphere for 1 h, the mean diameter of the resulted gallium nitride (wurtzite-GaN) nanoparticles varied from 3-9 nm. Both nanocrystalline films of Ga2O3 and GaN were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy, UV-vis spectroscopy and photoluminescence in order to study their chemical and physical properties explicitly.     

Preparation and electrical properties of ultrafine Ga2O3 nanowires

Uniform and well-crystallized beta-Ga2O3 nanowires are prepared by reacting metal Ga with water vapor based on the vapor-liquid-solid (VLS) mechanism. Electron microscopy studies show that the nanowires have diameters ranging from 10 to 40 nm and lengths up to tens of micrometers. The contact properties of individual Ga2O3 nanowires with Pt or Au/Ti electrodes are studied, respectively, finding that Pt can form Schottky-barrier junctions and Au/Ti is advantageous to fabricate ohmic contacts with individual Ga2O3 nanowires. In ambient air, the conductivity of the Ga2O3 nanowires is about 1 (Omega.m)-1, while with adsorption of NH3 (or NO2) molecules, the conductivity can increase (or decrease) dramatically at room temperature. The as-grown Ga2O3 nanowires have the properties of an n-type semiconductor.     

氧化铟八面体、纳米带、锯齿状纳米线和纳米链的可控合成

在N₂/H₂O混合气流中将硅片上金覆盖的金属铟颗粒加热到800 ℃制备出了不同形貌的In₂O₃纳米结构, 在距铟源不同距离处依次得到In₂O₃的八面体、纳米带、锯齿状纳米线和纳米链. 采用拉曼光谱、扫描电镜、X射线衍射和透射电镜对产物进行了表征分析. 结果表明, 八面体、纳米带、锯齿状纳米线和纳米链均为立方相单晶结构的In₂O₃. 基于气-固和气-液-固生长机理详细分析了八面体、纳米带、锯齿状纳米线和纳米链的生长过程, 提出了不同形貌In₂O₃纳米结构的生长模式.     

Structures of oxide nanobelts and nanowires.

We have recently reported the synthesis of one-dimensional nanobelt structures of ZnO, SnO2, In2O3, CdO, Ga2O3, and PbO2 by evaporating the desired commercial metal oxide powders at high temperatures (Science (2001), 291, 1947). The as-synthesized oxide nanobelts are pure, structurally uniform, single crystalline, and most of them free from dislocations. The beltlike morphology appears to be a unique and common structural characteristic for the family of semiconducting oxides. In the present article, we focus on the twin and stacking fault planar defects found in oxide nanobelts and nanowires although they are rarely observed. Some interesting and unique growth morphologies are presented to illustrate the roles played by surface energy and kinetics in growth. It is shown that the surfaces of the oxide nanobelts are enclosed by the low-index, low-energy crystallographic facets. The growth morphology is largely dominated by the growth kinetics.     

Direct synthesis of gallium oxide tubes,nanowires, and nanopaintbrushes

We demonstrate bulk synthesis of highly crystalline beta-gallium oxide tubes, nanowires, and nanopaintbrushes using molten gallium and microwave plasma containing a mixture of monatomic oxygen and hydrogen. Gallium oxide nanowires were 20-100 nm thick and tens to hundreds of micrometers long. Transmission electron microscopy (TEM) revealed the nanowires to be highly crystalline and devoid of any structural defects. Results showed that multiple nucleation and growth of gallium oxide nanostructures could easily occur directly out of molten gallium exposed to an appropriate composition of hydrogen and oxygen in the gas phase. These gallium oxide nanostructures should be of particular interest for optoelectronic devices and catalytic applications.     

硼酸镁纳米带的制备、结构和生长机理

以晶态B和纳米MgO粉末为原料, 在1100 ℃含水的气氛下反应制备了新型准一维纳米材料硼酸镁纳米带. 采用多种表征方法, 如X射线衍射(XRD), 扫描电镜(SEM), 透射电镜(TEM), 能量色散谱仪(EDS)和傅立叶红外(FT-IR)等, 研究了产物的形貌和结构. 结果表明, 除了部分附着的Mg₂B₂O₅颗粒外, 产物主要为单晶的Mg₃B₂O₆纳米带. 其宽度在100～200 nm, 长度达到几十微米, 生长方向大致为[010]方向. 简要讨论了硼酸镁纳米带的生长机理和反应温度对产物的影响.     

Formation of crystalline Na2V6O16·3H2O ribbons into belts and rings

Single-crystalline nanobelts and nanorings of Na(2)V(6)O(16)·3H(2)O structures have been facilely synthesized through a direct hydrothermal reaction between NaVO(3) and H(3)PO(4), without the addition of any harmful solvents or surfactants. The analytical techniques of scanning electron microscopy, transmission electron microscopy (TEM), powder X-ray diffraction, thermogravimetric analysis, energy-dispersive X-ray spectroscopy, Fourier transform infrared, high-resolution TEM, and selected-area electron diffraction have been used to characterize the morphology, composition, and structure of the synthesized products. The Na(2)V(6)O(16)·3H(2)O nanobelts are up to several hundreds of micrometers in length and 100-300 nm in thickness, and for nanorings, the diameters are 4.5-6.5 μm. H(3)PO(4) plays a key role in maintaining the pH of the solution as well as producing PO(4)(3-) ions in solution. The chemical reactions and a possible growth mechanism involved in the formation of Na(2)V(6)O(16)·3H(2)O nanobelts and nanorings are briefly discussed.     

Controlled growth of large-area, uniform, vertically aligned arrays of alpha-Fe2O3 nanobelts and nanowires

Vertically aligned iron oxide nanobelt and nanowire arrays have been synthesized on a large-area surface by direct thermal oxidation of iron substrates under the flow of O(2). The effects of reactive gas pressure, composition, and temperature have been systematically studied. It was found that nanobelts (width, tens of nanometers; thickness, a few nanometers) are produced in the low-temperature region (approximately 700 degrees C) whereas cylindrical nanowires tens of nanometers thick are formed at relatively higher temperatures (approximately 800 degrees C). Both nanobelts and nanowires are mostly bicrystallites with a length of tens of micrometers which grow uniquely along the [110] direction. The growth habits of the nanobelts and nanowires in the two temperature regions indicate the role of growth rate anisotropy and surface energy in dictating the ultimate nanomorphologies.     

化学气相沉积法制备氧化锡自组装纳米结构

采用化学气相沉积法在镀有5-10 nm厚金膜的SiO2衬底上, 通过控制生长条件, 实现了二氧化锡纳米结构的自组装生长, 成功制备出了莲花状和菊花状的二氧化锡自组装纳米结构. 利用扫描电子显微镜、X射线衍射等表征分析手段对样品的表面形貌、结构及成份进行表征和研究. 并在此基础上, 讨论了两种自组装纳米结构的生长机制.     

Gallium oxide thin films from the AACVD of [Ga(NMe2)3]2 and donor functionalised alcohols

Thin films of Ga(2)O(3) have been produced from [Ga(NMe(2))(3)](2) and ROH (R = CH(2)CH(2)NMe(2), CH(CH(2)NMe(2))(2), CH(CH(3))CH(2)NMe(2), CH(2)CH(2)OMe and C(CH(3))(2)CH(2)OMe) by aerosol assisted chemical vapour deposition on glass. Transparent, unreflective films were obtained at a deposition temperature of 550 degrees C using toluene as solvent. The gallium oxide films were analyzed by Scanning electron microscopy (SEM), Raman spectroscopy, wavelength dispersive analysis of X-rays (WDX) and X-ray photoelectron spectroscopy (XPS). The gallium oxide films obtained were X-ray amorphous. Gas-sensing experiments indicated that the films showed an n-type response to ethanol at a variety of temperatures.     

Self-assembly and hierarchical organization of Ga2O3/In2O3 nanostructures

We report on the realization of novel 3-D hierarchical heterostructures with 6-and 4-fold symmetries by a transport and condensation technique. It was found that the major core nanowires or nanobelts are single-crystalline In2O3, and the secondary nanorods are single-crystalline monoclinic beta-Ga2O3 and grow either perpendicular on or slanted to all the facets of the core In2O3 nanobelts. Depending on the diameter of the core In2O3 nanostructures, the secondary Ga2O3 nanorods grow either as a single row or multiple rows. The one-step growth of the unique Ga2O3/In2O3 heteronanostructures is a spontaneous and self-organized process. The simultaneous control of nanocrystal size and shape together with the possibility of growing heterostructures on certain nanocrystal facets opens up novel routes to the synthesis of more sophisticated heterostructures as building blocks for opto- and nanoelectronics.     

Large-scale growth of millimeter-long single-crystalline ZnS nanobelts

Millimeter-long single-crystalline hexagonal ZnS nanobelts were grown on specific locations on a wafer scale. This is the first time that the millimeter-scale ZnS nanobelt has been synthesized. The longest nanobelts are about 3 mm. The as-grown nanobelts were characterized by means of field emission scanning electron microscopy, X-ray powder diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction. The results indicate that the ultra-long nanobelts are pure single-crystalline hexagonal ZnS. There are two kinds of ZnS nanobelts existing in the products. One is the nanobelts that have two smooth sides and grow along the [0 0 1] longitudinal direction, and the other is the nanobelts that have one smooth side and one saw-teeth-like side, namely nanosaws, and grow along the [2 1 0] longitudinal direction. A vapor-liquid-solid mechanism is suggested for the lengthwise growth of the ZnS nanobelts (nanosaws) and a vapor-solid mechanism for the side direction growth of the saw-teeth of the nanosaws.     

Surface-enhanced Raman scattering and polarized photoluminescence from catalytically grown CdSe nanobelts and sheets

We have successfully fabricated single-crystalline CdSe nanowires, nanobelts, and sheets by a chemical vapor deposition (CVD) method assisted with laser ablation. The synthesized CdSe nanostructures have hexagonal wurtzite phase as characterized by X-ray diffraction (XRD). CdSe nanobelts can range in length from several tens to a hundred micrometers, in thickness from 40 to 70 nm, and a tapered width which is approximately 3 microm at one end and tapers off to approximately 100 nm at a catalytic gold particle. Both selected area electron diffraction (SAED) and high-resolution transmission electron microscopic (HRTEM) measurements show that the single-crystalline hexagonal belts and sheets grew along the [0.1-1.0] direction with side surface of +/-(0 0 0 1) and top surface of +/-(2 -1 -1 0). While the growth mechanism of nanobelts complies with a combination of vapor-liquid-solid (VLS) and vapor-solid (VS) processes, the formation of sheets is primarily based on the VS mechanism. For comparison, the phonon modes of CdSe nanobelts and bulk powder have been measured by surface-enhanced Raman scattering (SERS) and normal Raman scattering (NRS) spectroscopies with off- and near-resonant excitations. A blue-shift of 2.4 cm(-1) for the longitudinal optical (LO) phonon of CdSe nanobelts, relative to bulk CdSe, is attributed to a lattice contraction in the belt structure, which is confirmed by the XRD measurement. Room-temperature microphotoluminescence (PL) at approximately 1.74 eV from single CdSe nanobelts shows a 3-fold enhancement compared to that from bulk CdSe powder and displays a partial polarization dependence of emission angles.     

Synthesis and characterization of ZnO and ZnO:Ga films and their application in dye-sensitized solar cells

Highly crystalline ZnO and Ga-modified zinc oxide (ZnO:Ga) nanoparticles containing 1, 3 and 5 atom% of Ga3+ were prepared by precipitation method at low temperature. The films were characterized by XRD, BET, XPS and SEM. No evidence of zinc gallate formation (ZnGa2O4), even in the samples containing 5 atom% of gallium, was detected by XRD. XPS data revealed that Ga is present into the ZnO matrix as Ga3+, according to the characteristic binding energies. The particle size decreased as the gallium level was increased as observed by SEM, which might be related to a faster hydrolysis reaction rate. The smaller particle size provided films with higher porosity and surface area, enabling a higher dye loading. When these films were applied to dye-sensitized solar cells (DSSCs) as photoelectrodes, the device based on ZnO:Ga 5 atom% presented an overall conversion efficiency of 6% (at 10 mW cm(-2)), a three-fold increase compared to the ZnO-based DSSCs under the same conditions. To our knowledge, this is one of the highest efficiencies reported so far for ZnO-based DSSCs. Transient absorption (TAS) study of the photoinduced dynamics of dye-sensitized ZnO:Ga films showed that the higher the gallium content, the higher the amount of dye cation formed, while no significant change on the recombination dynamics was observed. The study indicates that Ga-modification of nanocrystalline ZnO leads to an improvement of photocurrent and overall efficiency in the corresponding device.     

Large-scale synthesis of single-crystalline RE2O3 (RE=Y, Dy, Ho, Er) nanobelts by a solid-liquid-phase chemical route

Yttrium-group heavy rare-earth sesquioxide (RE(2)O(3), RE=Y, Dy, Ho, Er) nanobelts were successfully fabricated by thermolysis of solid RE(NO(3))(3)x H(2)O in a dodecylamine/1-octadecene mixed solvent system. The synthetic principle is based on separating the nucleation and growth processes by utilizing the poor solubility of RE(NO(3))(3)chi H(2)O in the solvent mixture and the heat-transportation difference between the liquid and solid. By using dodecylamine, RE(2)O(3) nanobelts can be readily obtained. X-ray diffraction (XRD) analysis shows that the synthesized RE(2)O(3) nanobelts are body-centered cubic and crystalline. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), selective-area electron diffraction (SAED), and high-resolution transmission electron microscopy (HR-TEM) demonstrate that the synthesized RE(2)O(3) compounds possess regular geometric structure (beltlike) with perfect crystallinity. Preliminary experimental results prove that the dodecylamine plays a key role in the formation of RE(2)O(3) nanobelts and cannot be replaced by other surfactants. Furthermore, this method can be extended to the synthesis of RE(2)O(3) nanobelt/metal nanocrystal nanocomposites and ABO(3) (A=Y, Dy, Ho, Er; B=Al) and A(3)B(5)O(12) (A=Y, Dy, Ho, Er; B=Al)-type ternary oxide nanobelts, using mixed-metal nitrate salts in the correct stoichiometry instead of single rare-earth nitrates.     

Growth of SnO nanobelts and dendrites by a self-catalytic VLS process

This article reports on the growth of SnO nanobelts and dendrites by a carbothermal reduction process. The materials were synthesized in a sealed tube furnace at 1210 degrees C and at 1260 degrees C for 2 h, in a dynamic nitrogen atmosphere of 40 sccm. After synthesis, gray-black materials were collected downstream in the tube and the samples were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy (EDX). The results showed that the gray-black materials were composed of nanobelts, which grew in the [110] direction of the orthorhombic structure of SnO. Some of the belts also presented dendritic growth. The dendrites grew in the (110) planes of the SnO structure, and no defects were observed at the junction between the nanobelts and the dendrites. A self-catalytic vapor-liquid-solid (VLS) process was proposed to explain the growth of the SnO nanobelts and dendrites.     

Synthesis of single crystal Sn-doped In(2)O(3) nanowires: size-dependent conductive characteristics

Single crystalline Sn doped In(2)O(3) (ITO) NWs (nanowires) were synthesized via an Au-catalyzed VLS (vapor-liquid-solid) method at 600 °C. The different sizes (～20, ～40, ～80 nm) of the Au NPs (nanoparticles) provided the controllable diameters for ITO NWs during growth. Phase and microstructures confirmed by high-resolution transmission electron microscope images (HRTEM) and X-ray diffraction (XRD) spectra indicated that the phase of In(2)O(3) NWs had a growth direction of [100]. X-ray photoelectron spectroscopy (XPS) was employed to obtain the chemical compositions of the ITO NWs as well as the ratio of Sn/In and oxygen concentrations. The findings indicated that low resistivity was found for ITO NWs with smaller diameters due to higher concentrations of oxygen vacancies and less incorporation of Sn atoms inside the NWs. The resistivity of NWs increases with increasing diameter due to more Sn atoms being incorporated into the NW and their reduction of the amount of oxygen vacancies. Low resistivity NWs could be achieved again due to excess Sn atoms doped into the large diameter NWs. Therefore, by optimizing the well-controlled growth of the NW diameter and interface states, we are able to tune the electrical properties of Sn-doped ITO NWs.     

砷化镓半导体表面自然氧化层的X射线光电子能谱分析

用X射线光电子能谱(XPS)，测量了Ga3d和As3d光电子峰的结合能值，指认了砷化镓(GaAs)晶片表面的氧化物组成，计算了表面氧化层的厚度，定量分析了表面的化学组成；比较了几种不同的砷化镓晶片表面的差异。结果表明：砷化镓表面的自然氧化层主要由Ga2O3、As2O5、As2O3和单质As组成，表面镓砷比明显偏离理想的化学计量比，而且，氧化层的厚度随镓砷比的增大而增加；溶液处理后，砷化镓表面得到了改善。讨论了可能的机理。     

Controlled growth of semiconducting oxides hierarchical nanostructures

Semiconducting ZnO hierarchical nanostructure, where ZnO nanonails were grown on ZnO nanowires, has been fabricated under control experiment with a mixture of ZnO nanopowders and Sn metal powders. Sn nanoparticles are located at or close to the tips of the nanowires and the growth branches, serving as the catalyst for the vapor-liquid-solid growth mechanism. The morphology and microstructure of ZnO nanowire and nanonail were measured by scanning electron microscopy and high-resolution transmission electron microscopy. The long and straight ZnO nanowires grow along [0001] direction. ZnO nanonails are aligned radially with respect to the surface the ZnO nanowire. The long axis direction of nanonails forms an angle of ∼30° to the [0001] direction.