Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench

An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench(HK TG VDMOS) is proposed in this paper.The HK TG VDMOS features a high-k(HK) trench below the trench gate.Firstly,the extended HK trench not only causes an assistant depletion of the n-drift region,but also optimizes the electric field,which therefore reduces Ron,sp and increases the breakdown voltage(BV).Secondly,the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration.Thirdly,compared with the superjunction(SJ) vertical double-diffused metal-oxide semiconductor(VDMOS),the new device is simplified in fabrication by etching and filling the extended trench.The HK TG VDMOS with BV = 172 V and Ron,sp = 0.85 mΩ·cm2 is obtained by simulation;its Ron,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%,in comparison with those of the conventional trench gate VDMOS(TG VDMOS) and conventional superjunction trench gate VDMOS(SJ TG CDMOS).     

A low on-resistance triple RESURF SOI LDMOS with planar and trench gate integration

A low on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) n-channel lateral double-diffused metal-oxide-semiconductor(LDMOS) is proposed and its mechanism is investigated by simulation.The LDMOS has two features:the integration of a planar gate and an extended trench gate(double gates(DGs));and a buried P-layer in the N-drift region,which forms a triple reduced surface field(RESURF)(TR) structure.The triple RESURF not only modulates the electric field distribution,but also increases N-drift doping,resulting in a reduced specific on-resistance(Ron,sp) and an improved breakdown voltage(BV) in the off-state.The DGs form dual conduction channels and,moreover,the extended trench gate widens the vertical conduction area,both of which further reduce the Ron,sp.The BV and Ron,sp are 328 V and 8.8 m.cm2,respectively,for a DG TR metal-oxide-semiconductor field-effect transistor(MOSFET) by simulation.Compared with a conventional SOI LDMOS,a DG TR MOSFET with the same dimensional device parameters as those of the DG TR MOSFET reduces Ron,sp by 59% and increases BV by 6%.The extended trench gate synchronously acts as an isolation trench between the high-voltage device and low-voltage circuitry in a high-voltage integrated circuit,thereby saving the chip area and simplifying the fabrication processes.     

A low specific on-resistance SOI MOSFET with dual gates and recessed drain

A low specific on-resistance (R_on,sp) integrable silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistor (MOSFET) is proposed and investigated by simulation. The MOSFET features a recessed drain as well as dual gates which consist of a planar gate and a trench gate extended to the buried oxide layer (BOX) (DGRD MOSFET). First, the dual gates form dual conduction channels, and the extended trench gate also acts as a field plate to improve the electric field distribution. Second, the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path. Third, the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions. All of these sharply reduce R_on,sp and maintain a high breakdown voltage (BV). The BV of 233 V and R_on,sp of 4.151 mΩ·cm² (V_GS=15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch. Compared with the trench gate SOI MOSFET and the conventional MOSFET, R_on,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV, respectively. The trench gate extended to the BOX synchronously acts as a dielectric isolation trench, simplifying the fabrication processes.     

Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch

A low specific on-resistance (R S,on) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-field-effect-transistor) with a reduced cell pitch is proposed.The lateral MOSFET features multiple trenches:two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET).Firstly,the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si;secondly,the oxide trenches cause multiple-directional depletion,which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer.Both of them result in a high breakdown voltage (BV).Thirdly,the oxide trenches cause the drift region to be folded in the vertical direction,leading to a shortened cell pitch and a reduced R S,on.Fourthly,the trench gate extended to the BOX further reduces R S,on,owing to the electron accumulation layer.The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 μm,and R S,on decreases from 419 m · cm 2 to 36.6 m · cm 2.The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.     

Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region

<正>This paper proposes a double epi-layers 4H—SiC junction barrier Schottky rectifier(JBSR) with embedded P layer (EPL) in the drift region.The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process.The electric field and potential distribution are changed due to the buried P-layer,resulting in a high breakdown voltage(BV) and low specific on-resistance(R_(on,sp)).The influences of device parameters,such as the depth of the embedded P+ regions,the space between them and the doping concentration of the drift region,etc.,on BV and R_(on,sp) are investigated by simulations,which provides a particularly useful guideline for the optimal design of the device.The results indicate that BV is increased by 48.5%and Baliga's figure of merit(BFOM) is increased by 67.9%compared to a conventional 4H-SiC JBSR.     

Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates

Based on the theoretical and experimental investigation of a thin silicon layer(TSL) with linear variable doping(LVD) and further research on the TSL LVD with a multiple step field plate(MSFP),a breakdown voltage(BV) model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator(SOI) device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field(ENDIF),from which the reduced surface field(RESURF) condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection(HVI) line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET(nLDMOS) with MSFP is realized.The experimental breakdown voltage(BV) and specific on-resistance(R on,sp) of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.     

The fabrication and characterization of 4H SiC power UMOSFETs

The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors(UMOSFETs) is reported in this paper.The device has a 15-μm thick drift layer with 3×1015 cm-3 N-type doping concentration and a 3.1μm channel length.The measured on-state source-drain current density is 65.4 A/cm2 at Vg = 40 V and VDS = 15 V.The measured threshold voltage(Vth) is 5.5 V by linear extrapolation from the transfer characteristics.A specific on-resistance(Rsp-on) is 181 mΩ·cm2 at Vg = 40 V and a blocking voltage(BV) is 880 V(IDS = 100 μA@880V) at Vg = 0 V.     

Novel high-voltage power lateral MOSFET with adaptive buried electrodes

A new high-voltage and low-specific on-resistance (R on,sp ) adaptive buried electrode (ABE) silicon-on-insulator (SOI) power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide (BOX) layer, the negative drain voltage V d is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than the electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field E I and the breakdown voltage (BV) of ABE SOI are 545 V/μm and -587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low R on,sp is obtained. Furthermore, the structure also alleviates the self-heating effect (SHE). The analytical model matches the simulation results.     

Simulation study of semi-superjunction power MOSFET with SiGe pillar

The feasibility of applying the semi-superjunction (Semi-SJ) with SiGe-pillar (SGP) concept to Power MOSFET is studied in this paper. The electrical performances of SGP are compared with the conventional Power MOSFET through 3D device simulation work in terms of specific-on resistance (_Ron)$\left(R_{on}\right)$, breakdown-voltage (BV  ), the effect to change the Ge mole fraction in the SGP and the thermal stabilization. The results show that the _Ron$R_{on}$ is reduced by 44% on the base of BVs   reducing only 4.8%, tradeoff _Ron$R_{on}$ vs. BV and thermal stabilization of SGP are superior to that of conventional Semi-SJ since the strain effect inducing into the SGP structure in the low power device application.     

A methodology to optimize the quantification of sp carbon fraction from K edge EELS spectra

A methodology is presented to select a consistent method, using electron energy loss spectroscopy (EELS), to extract the fraction of sp²-bonded carbon atoms in carbonaceous materials. According to this methodology, a reliable method has to conjointly fulfill two criteria. The first one consists in verifying, on a perfect graphite sample, that the experimental evolution of R = I_π*/(I_π* + I_σ*)-ratios is in good agreement with the one theoretically predicted as a function of experimental settings. The second criterion consists in measuring sp² fractions in amorphous carbon samples with a minimum of fluctuation. We test three commonly used R-extraction techniques, and we show that they exhibit some failures. We thus implement a more accurate R-extraction process that accounts for the predicted graphite R-evolution and exhibits a low intrinsic 4%-noise, as determined from the sp² fraction fluctuation. Moreover, we check the transferability of our method on a wide range of EELS spectra, acquired with different experimental resolutions on samples exhibiting various sp² contents.     

Mechanistic studies of reactions catalysed by diamine oxidase using isotope effects

Diamine oxidase (DAO), the enzyme that is responsible for amine biodegradation in animals, plants and humans, catalyses the biotransformation of amines such as histamine (HA), putrescine, 1-phenylethylamine, tyrosine, tryptamine, serotonine and spermine. The kinetic and solvent isotope effects (SIEs) were applied to study the mechanism of the biotransformation using HA and its methylderivatives. The SIE for the biotransformation of HA, N^τ-methylhistamine and N^π-methylhistamine was found to be 3.58, 2.22 and 5.70 on V_max, and 1.58, 1.06 and 1.14 on V_max/K_M, respectively. On the other hand, the kinetic isotope effect for oxidation of stereospecifically deuterium-labelled [(α R)-²H]-N^τ-methylhistamine and [(α R)-²H]-N^π-methylhistamine was 0.69 and 0.62 on V_max, and 15.06 and 7.50 on V_max/K_M, respectively. These results demonstrate that DAO catalyses amine biotransformation by stereospecifically cleaving the αC\bond H bond in the pro-S position. Moreover, the oxidation of amine to aldehyde involves several transition states, including hybridisation change from sp³ (Schiff base) to sp² (imine), then back again to sp³ to give a final product with hybridisation sp² (aldehyde).     

SBV Regularity for Genuinely Nonlinear, Strictly Hyperbolic Systems of Conservation Laws in one Space Dimension

We prove that if t ? u(t) ? BV(\mathbbR){t \mapsto u(t) \in BV(\mathbb{R})} is the entropy solution to a N × N strictly hyperbolic system of conservation laws with genuinely nonlinear characteristic fields     

High vertical breakdown strength in with low specific on‐resistance AlGaN/AlN/GaN HEMTs on silicon

Off‐state and vertical breakdown characteristics of AlGaN/AlN/GaN high‐electron‐mobility transistors (HEMTs) on high‐resistivity (HR)‐Si substrate were investigated and analysed. Three‐terminal off‐state breakdown (BV_gd) was measured as a function of gate–drain spacing (L_gd). The saturation of BV_gd with L_gd is because of increased gate leakage current. HEMTs with L_gd = 6 µm exhibited a specific on‐resistance R_DS[ON] of 0.45 mΩ cm². The figure of merit (FOM = BV_gd²/R_DS[ON]) is as high as 2.0 × 10⁸ V² Ω^–1 cm^–2, the highest among the reported values for GaN HEMTs on Si substrate. A vertical breakdown of ～1000 V was observed on 1.2 µm thick buffer GaN/AlN grown on Si substrate. The occurrence of high breakdown voltage is due to the high quality of GaN/AlN buffer layers on Si substrate with reduced threading dislocations which has been confirmed by transmission electron microscopy (TEM). This indicates that the AlGaN/AlN/GaN HEMT with 1.2 µm thick GaN/AlN buffer on Si substrate is promising candidate for high‐power and high‐speed switching device applications. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Kinetics and thermodynamics of reversible disproportionation–comproportionation in redox triad oxoammonium cations – nitroxyl radicals – hydroxylamines

Kinetics and equilibrium of the acid‐catalyzed disproportionation of cyclic nitroxyl radicals R₂NO^? to oxoammonium cations R₂NO⁺ and hydroxylamines R₂NOH is defined by redox and acid–base properties of these compounds. In a recent work (J. Phys. Org. Chem. 2014, 27, 114‐120), we showed that the kinetic stability of R₂NO^? in acidic media depends on the basicity of the nitroxyl group. Here, we examined the kinetics of the reverse comproportionation reaction of R₂NO⁺ and R₂NOH to R₂NO^? and found that increasing in –I‐effects of substituents greatly reduces the overall equilibrium constant of the reaction K₄. This occurs because of both the increase of acidity constants of hydroxyammonium cations K_3H+ and the difference between the reduction potentials of oxoammonium cations E_R2NO+/R2NO? and nitroxyl radicals E_R2NO?/R2NOH. pH dependences of reduction potentials of nitroxyl radicals to hydroxylamines E_1/3Σ and bond dissociation energies D(O–H) for hydroxylamines R₂NOH in water were determined. For a wide variety of piperidine‐ and pyrrolidine‐1‐oxyls values of pK_3H+ and E_R2NO+/R2NO? correlate with each other, as well as with the equilibrium constants K₄ and the inductive substituent constants σ_I. The correlations obtained allow prediction of the acid–base and redox characteristics of redox triads R₂NO^?–R₂NO⁺–R₂NOH. Copyright © 2014 John Wiley & Sons, Ltd.     

A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor(UMOSFET) integrated with a Schottky rectifier is proposed.In this device,a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET.Specific on-resistances of 7.7 m.mm 2 and 6.5 m.mm 2 for the gate bias voltages of 5 V and 10 V are achieved,respectively,and the breakdown voltage is 61 V.The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET.     

Magnetic field effects on electron transfer reactions involving sextet-spin (S = 5/2) intermediates generated on photoexcitation of a Cr(III)-porphyrin complex

The excited trip-sextet (⁶T₁) state of chloro-(3-methylimidazol)-(meso-tetraphenylporphyrinato) chromium(III) (Cr^IIIP) is quenched by 1,1′-dibenzyl-4,4′-bipyridinium (BV²⁺) in acetonitrile through electron transfer to give ⁵(Cr^IIIP^·+) and ²BV^·+. The intermediate is a geminate ion pair in the sextet (Sx) state ⁶[⁵(Cr^IIIP^·+) ²BV^·+], which decays through either the escape from a solvent cage to give the free ions or the spin conversion to the quartet (Qa) state followed by back electron transfer. The free ion yield (Φ_FI) increased with increasing magnetic field from 0 to 4 T and then slightly decreased from 4 T to 10 T. These magnetic field effects are explained as follows. Under low fields where the Zeeman splitting of the spin sublevels is lower than or comparable with the electron spin dipole—dipole interaction within ⁵(Cr^IIIP^·+), this interaction effectively induces the Sx → Qa conversion of [⁵(Cr^IIIP^·+)²BV⁺] to result in low Φ_FI values. Under high fields where the Zeeman splitting is larger than the dipole—dipole interaction, the Sx → Qa conversion is decreased with increasing field to cause higher Φ_FI values. The slight decrease in Φ_FI above 4 T may be due to the Δg mechanism.     

Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

Direct current (DC) reverse step voltage stress is applied on the gate of AlGaN/GaN high-electron mobility transistor (HEMT). Experiments show that parameters degenerate under stress. Large-signal parasitic source/drain resistance (R_S/R_D) and gate-source forward I-V characteristics are recoverable after breakdown of the device under test (DUT). Electrons trapped by both the AlGaN barrier trap and the surface state under stress lead to this phenomenon, and surface state recovery is the major reason for the recovery of device parameters.     

A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs

In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor（MOSFET） are investigated.The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation.The two-dimensional Poisson＇s equation of potential distribution is presented.A threshold voltage analytical model for metal-gate/high-k/SiO 2 /Si stacked MOSFETs is developed by solving these Poisson＇s equations using the boundary conditions.The model is verified by a two-dimensional device simulator,which provides the basic design guidance for metal-gate/high-k/SiO 2 /Si stacked MOSFETs.     

基于辐照前1/f噪声的金属-氧化物-半导体场效应晶体管辐照退化模型

基于金属-氧化物-半导体场效应晶体管(MOSFET)噪声的载流子数涨落和迁移率涨落理论,建立了MOSFET辐照前1/f噪声参量与辐照后分别由氧化层陷阱和界面陷阱诱使阈值电压漂移之间的定量数学模型,并通过实验予以验证.研究结果表明,辐照诱生的氧化层陷阱通过俘获和发射过程与沟道交换载流子,在引起载流子数涨落的同时也通过库仑散射导致沟道迁移率的涨落,因此辐照前的1/f噪声幅值正比于辐照诱生的氧化层陷阱数.利用该模型对MOSFET辐照前1/f噪声与辐照退化的相关性从理论上 关键词： f噪声')" href="#">1/f噪声 辐照 金属-氧化物-半导体场效应晶体管 陷阱