Effects of BaTiO<Subscript>3</Subscript> and SrTiO<Subscript>3</Subscript> as the buffer layers of epitaxial BiFeO<Subscript>3</Subscript> thin films

BiFeO₃ (BFO) thin films with BaTiO₃ (BTO) or SrTiO₃ (STO) as buffer layer were epitaxially grown on SrRuO₃-covered SrTiO₃ substrates. X-ray diffraction measurements show that the BTO buffer causes tensile strain in the BFO films, whereas the STO buffer causes compressive strain. Different ferroelectric domain structures caused by these two strain statuses are revealed by piezoelectric force microscopy. Electrical and magnetical measurements show that the tensile-strained BFO/BTO samples have reduced leakage current and large ferroelectric polarization and magnetization, compared with compressively strained BFO/STO. These results demonstrate that the electrical and magnetical properties of BFO thin films can be artificially modified by using a buffer layer.     

A planar complex phase interface in BaTiO<Subscript>3</Subscript>

A model is proposed for a complex phase interface separating the cubic and tetragonal phases in barium titanate, which consists of an intermediate layer of the induced phase with small monoclinic distortions near the interface. It is demonstrated that the induced phase can have two different structures, which are formed during the direct and reverse phase transitions, respectively. The parameters of these structures, equations of phase boundaries, relative orientations of the phases upon the phase transition, and the number of possible orientation states are determined.     

Third-order nonlinear optical response of Au-core CdS-shell composite nanoparticles embedded in BaTiO<Subscript>3</Subscript> thin films

Au-core CdS-shell composite nanoparticles were synthesized by a direct self-assembly process and integrated into BaTiO₃ thin films. Characterization by transmission electron microscopy showed that the average diameter of these composite nanoparticles was about 8 nm. Using the femtosecond time-resolved optical Kerr effect method, we investigated the third-order nonlinear optical response of the Au@CdS nanoparticles embedded in the BaTiO₃ thin films at a wavelength of 800 nm. An ultrafast nonlinear response and a large effective third-order nonlinear susceptibility of χ⁽³⁾=7.7×10^-11 esu were observed. We attributed the enhancement of the third-order optical nonlinearity to a localized electric field effect originating from the core-shell structure under off-surface-plasmon resonance conditions. Received: 13 May 2002 / Revised version: 23 October 2002 / Published online: 3 April 2003 RID="*" ID="*"Corresponding author. Fax: +86-21/6510-4949, E-mail: sxqian@fudan.ac.cn     

Cascade of phase transitions in GdFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript>

Cascade of phase transitions in GdFe₃(BO₃)₄ at 156, 37, and 9 K has been detected by specific heat measurements and further studied by Raman scattering and Nd³⁺ spectroscopic probe method. A weakly first-order structural phase transition at 156 K is followed by a second-order antiferromagnetic ordering phase transition at 37 K and a first-order spin-reorientational phase transition at 9 K.     

Analysis of quadratic electrooptic response of BaTiO<Subscript>3</Subscript> crystal in ferroelectric phase

Using the example of BaTiO₃ in a ferroelectric phase it is shown that a large difference in magnitudes of individual linear electrooptic coefficients may be a reason of additional indirect quadratic contributions that are independent of real quadratic coefficients. For some directions of the applied field and light, the indirect contributions may be even larger than the real quadratic ones. Independently of nonlinear distortions that can affect applicability of technical devices, a large difference between linear electrooptic coefficients may lead to serious problems in measurements of the real quadratic electrooptic effect. The analysis is based on the extended Jones matrix calculus applied to a Gaussian beam.     

Electronic spectra and phase transitions in thin [N(CH<Subscript>3</Subscript>)<Subscript>4</Subscript>]<Subscript>2</Subscript>CuCl<Subscript>4</Subscript> microcrystals

Optical absorption spectra in thin [N(CH₃)₄]₂CuCl₄ crystals in the thickness range 10 μm ≤ d < 100 μm have been studied. Strengthening of the crystal field has been found with a decrease in the [N(CH₃)₄]₂CuCl₄ crystal size. The reasons for absorption band shifts in the visible region depending on the [N(CH₃)₄]₂CuCl₄ crystal thickness and the manifestation of a size effect in crystals with an incommensurate superstructure are discussed.     

Femtosecond pulsed-laser deposition of BaTiO<Subscript>3</Subscript>

The elemental composition and the surface morphology of thin films grown by laser ablation of barium titanate with femtosecond pulses at 620 nm laser wavelength have been systematically studied according to the experimental pulsed-laser deposition parameters : laser energy density, oxygen pressure, substrate temperature, target–substrate distance and substrate position (in- and off-axis geometry). Firstly, even at high temperature (700 °C), the deposits consist of coalesced particles up to 1-μm in size, mixed in a poorly crystallised tetragonal BaTiO₃ thin film. The particles formed in femtosecond pulsed-laser deposition induce a high surface roughness, which is observed whatever the experimental growth conditions and does not correspond to the droplets often observed during laser ablation in the nanosecond regime. As shown by plasma expansion dynamics, these particles propagate toward the substrate in the plasma plume with a low velocity, and are assumed to be produced by gas-phase reactions. Moreover, the cationic concentration evaluated through the Ba/Ti ratio strongly depends on the oxygen pressure in the ablation chamber and the angular position of the substrate along the normal to the target at laser impact. Indeed, the films appear to be enriched in the heavy element (Ba) when the substrate is located at high angular deviation. This fact is correlated to an increase in the lighter species (i.e. Ti) in the central part of the plasma plume. Received: 30 April 2002 / Accepted: 26 August 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +33-1/4354-2878, E-mail: millon@gps.jussieu.fr RID="**" ID="**"Also at: LSMCL, Université de Metz, 57078 Metz Cedex 3, France     

EPR Monitoring of BaTiO<Subscript>3</Subscript> Formation

BaCO₃ and anatase-type TiO₂ were adopted as initial materials to prepare BaTiO₃ powder by the solid-state reaction method at a heating rate of 350°C/h. The electron paramagnetic resonance (EPR) technique was employed to monitor the formation of BaTiO₃. TiO₂ showed a series of complicated EPR signals associated primarily with Fe impurities. The formation of BaTiO₃ can be monitored in terms of the evolution of EPR signals associated with Fe impurities with calcination and measurement temperatures. The activation of the g = 2.004 signal above the Curie point of BaTiO₃ and the disappearance of the other EPR signals in the BaCO₃/TiO₂ mixture at room temperature are characteristic of the formation of BaTiO₃.     

Phenomenological description of thin SrTiO3 films

The constants of the phenomenological potential of SrTiO₃ are calculated allowing for recent experimental data. The α₁₁, α₁₂, and t ₄₄ constants are refined by more than one order of magnitude as compared to the earlier values. The T-P phase diagrams for the case of the uniaxial [001] and [110] loading are calculated. The temperature vs. misfit-strain phase diagram for a thin SrTiO₃ film is constructed, in which pure ferroelectric phases exist at low temperatures.

     

Temperature and frequency dependence of the ferroelectric characteristics of BaTiO<Subscript>3</Subscript> thin films for nonvolatile memory applications

Ferroelectric thin films of BaTiO₃ were successfully deposited on SiO₂/Si substrate under the optimal rf magnetron sputtering conditions, and their electrical and ferroelectric characteristics were discussed. The memory window, capacitance, threshold voltage and leakage current density of MFIS structure under different frequencies and temperatures were also reported. The variations of ferroelectric capacitance and threshold voltage would be attributed to the as-deposited BaTiO₃ films of MFIS structure as the temperature and frequency increased. Besides, the memory window, threshold voltage and leakage current density would be degraded from 4 V, 5 V and 8×10^-10 A/cm² to 2.5 V, 10 V and 5×10^-4 A/cm², respectively, as the temperature increased from 25 to 90 °C. PACS 77.84.-s; 81.15.Cd; 73.40.Qv; 51.50.+v; 67.80.Gb     

Contactless density measurement of high-temperature BiFeO<Subscript>3</Subscript> and BaTiO<Subscript>3</Subscript>

The density of liquid and undercooled BiFeO₃ and high-temperature solid, liquid, and undercooled BaTiO₃ was measured with an electrostatic levitation furnace. The density was obtained with an ultraviolet-based imaging technique that allowed excellent sample contrast throughout all phases of processing, including at elevated temperatures. Over the 1250- to 1490-K temperature range, the density of liquid BiFeO₃ can be expressed as _L(T)=6.70×10³–1.31(T-T_m)(kgm^-3) (±2 per cent) with T_m=1423 K, yielding a volume coefficient of thermal expansion _L(T)=1.9×10^-4 K^-1. For BaTiO₃, the density of the solid can be expressed as _S(T)=5.04×10³–0.21(T-T_m) (T_m=1893 K) over the 1220- to 1893-K range, yielding a volume coefficient of thermal expansion _S(T)=4.2×10^-5 K^-1, whereas that of the liquid can be expressed as _L(T)=4.04×10³-0.34(T-T_m) over the 1300- to 2025-K range with _L(T)=8.4×10^-5 K^-1. PACS 77.84.-s; 81.05.Je; 81.20.n     

Dielectric properties of thin PbTiO<Subscript>3</Subscript> films

The electrophysical properties and phase composition of thin lead titanate films prepared on various substrates by layer-by-layer magnetron sputtering of metals followed by annealing have been studied. The main parameters of the metal-ferroelectric film-metal multilayer structures, namely, the spontaneous polarization, coercive field, and permittivity, were studied for various substrate types and electrode materials. The conditions favorable for the formation of PbTiO₃ films that are similar in stoichiometry and phase composition were established.     

Magnetotransport in thin epitaxial Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> films

The magnetoconductivity of thin Bi₂Se₃ films covered by a protective Se layer and grown at (111) BaF₂ substrates is studied. It is shown that the negative magnetoconductivity observed at low magnetic fields and caused by the effect of weak antilocalization, as well as the Shubnikov?de Haas oscillations at higher fields, is determined only by the magnetic field component perpendicular to the film plane. The obtained experimental results can be reasonably interpreted under the assumption that the studied films exhibit two-dimensional topologically protected electron states. Moreover, the contribution of these states to the total conductivity turns out to be the dominant one.     

Structural and magnetic phase transitions in KMnF<Subscript>3</Subscript>

The dielectric and magnetic measurements of the KMnF₃ crystals obtained by the Czochralski and Bridgman methods have been performed. Three structural transitions have been observed in the crystals. The mutual arrangement of the temperature of magnetic ordering and the temperature of the lower structural transition determines the number and type of magnetic transitions in these crystals.     

Optical absorption spectra and magnetic phase transitions in TbFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript>

Optical absorption spectra of the trigonal crystal of TbFe₃(BO₃)₄ in the vicinity of the ⁷F₆ → ⁵D₄ transition in a Tb³⁺ ion were studied as a function of temperature (2–70 K) and magnetic field strength (0–60 kOe) at 2 K. The splitting of the excited states of Tb³⁺ due to both the magnetic ordering of iron and an external magnetic field was determined. Abrupt splitting of the absorption lines of Tb³⁺ at temperature T_N of the magnetic ordering of the subsystem of iron was revealed, suggesting that the nature of such splitting is not entirely magnetic.     

Physical properties of Ba<Subscript>0.8</Subscript>Sr<Subscript>0.2</Subscript>TiO<Subscript>3</Subscript> thin films

The behavior of material constants in ferroelectric Ba_0.8Sr_0.2TiO₃ thin films is studied depending on the misfit strain at room temperature in the context of nonlinear thermodynamic potential of the phenomenological theory. Some constants are found to undergo drastic changes with the alternating strain at the interfaces. The gathered results allow one to evaluate the material constants for a specific film and to outline the direction in searching the ways to synthesize films with the needed properties.     

High-resolution spectroscopy of HoFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> crystal: a study of phase transitions

The transmission spectra of HoFe₃(BO₃) multiferroic single crystals are studied by optical Fourier-transform spectroscopy at temperatures of 1.7–423 K in polarized light in the spectral range 500–10 000 cm^–1 with a resolution up to 0.1 cm^–1. A new first-order structural phase transition close to the second-order transition is recorded at T_c = 360 K by the appearance of a new phonon mode at 976 cm^–1. The reasons for considerable differences in T_c for different samples of holmium ferroborate are discussed. By temperature variations in the spectra of the f–f transitions in the Ho³⁺ ion, we studied two magnetic phase transitions, namely, magnetic ordering into an easy-plane structure as a second-order phase transition at T_N = 39 K and spin reorientation from the ab plane to the c axis as a first-order phase transition at T_SR = 4.7 ± 0.2 K. It is shown that erbium impurity in a concentration of 1 at % decreases the spin-reorientation transition temperature to T_SR = 4.0 K.     

Large optical nonlinearity in CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> thin films

CaCu₃Ti₄O₁₂ (CCTO) thin films were successfully prepared on LaAlO₃ substrates by pulsed laser deposition technique. We measured the nonlinear optical susceptibility of the thin films using Z-scan method at a wavelength of 532 nm with pulse durations of 25 ps and 7 ns. The large values of the third-order nonlinear optical susceptibility, χ ⁽³⁾, of the CCTO film were obtained to be 2.79×10⁻⁸ esu and 3.30×10⁻⁶ esu in picosecond and nanosecond time regimes, respectively, which are among the best results of some representative nonlinear optical materials. The origin of optical nonlinearity of CCTO films was discussed. The results indicate that the CCTO films on LaAlO₃ substrates are promising candidate materials for applications in nonlinear optical devices.     

Thermophysical studies of the phase transitions in (NH<Subscript>4</Subscript>)<Subscript>3</Subscript>NbOF<Subscript>6</Subscript> crystals

The thermophysical properties of oxyfluoride (NH₄)₃NbOF₆ were studied in detail over wide ranges of temperatures and pressures. At atmospheric pressure, a sequence of four structural phase transitions was established with the following changes in entropy: ΔS ₁ = Rln 2.7, δS ₂ = Rln38.3, ΔS ₃ = 0.08R, and ΔS ₄ = 0.17R. An external hydrostatic pressure was found to narrow the region of existence of the initial cubic phase. A triple point was detected in the p-T diagram; at a pressure above 0.07 GPa, the transition between the tetragonal and monoclinic phases occurs through a distorted high-pressure phase.     

Phase transitions and metastable states in stressed SrTiO<Subscript>3</Subscript> films

The sequence of the ground states in SrTiO₃ films subjected to epitaxial strain and fixed mechanical stress in the [001] and [110] directions is calculated from first principles within the density functional theory. Under the fixed-strain conditions, an increase in the substrate lattice parameter results in the following sequence of the ground states: I4cm → I4/mcm → Ima2 → Cm → Fmm2 → Ima2(II). When moving to the fixed-stress conditions, the phase sequence changes significantly and depends on how the stress is applied. It is revealed that the simultaneous presence of two types of the lattice instability (the ferroelectric and structural ones) in strontium titanate leads to the formation of a whole system of metastable phases whose number increases abruptly under the fixed-stress conditions. The stability of these phases changes with pressure and phase transitions occur between them. The appearance of broad bistability regions in certain parts of the phase diagram enables the use of this phenomenon for developing nonvolatile phase-change memory.