InAs 单量子点精细结构光谱

在5 K下,采用光致发光光谱和时间分辨光谱研究了不同单量子点的精细结构和对应发光光谱的偏振性、单激子/双激子发光光谱和相应发光动力学。给出InAs单量子点发光光谱所对应能级的精细结构及激子本征态的偏振特性。当精细结构能级劈裂为零时, 激子的本征态为简并的圆偏振态。而当精细结构能级劈裂大于零时,一般在几十到几百μeV,激子的本征态为非简并的线偏振态。相对于单激子发光寿命,激子-激子间的散射使单激子的复合发光寿命减小。     

Single-Photon Emission from InAs/AlGaAs Quantum Dots

The results of investigation of the radiative characteristics of heterostructures with InAs/AlGaAs quantum dots (QDs) grown by molecular beam epitaxy have been presented. The properties of single QDs were determined by spectroscopy of micro-photoluminescence in cylindrical mesa-structures with a diameter of 200–1000 nm or columnar microresonators with distributed Bragg mirrors. The single-photon nature of the radiation is confirmed by measurements and analysis of the second-order correlation function g²(τ) in a wide spectral range from 630 to 730 nm.     

Cross-Polarized Single Photon Emission from Single Semiconductor Quantum Dots with V-Type Level Driven by Pulse Field

The statistic properties of photon emissions from single semiconductor quantum dots with V-type level driven by pulses are investigated theoretically. Based on quantum regression theorem and master equations, the dynamic equations of the second-order correlation function of the photon emissions are deduced. The calculated results reveal that the efficiency of single photon emissions from two orthogonal polarization eigenstates |x〉and |y〉) reaches the maximum when the input pulses area is about π, and the probability of the cross-polarized single photon emission from |x 〉 and |y 〉decreases with increasing of pulse width.     

Cross-Polarized Single Photon Emission from Single Semiconductor Quantum Dots with V-Type Level Driven by Pulse Field

The statistic properties of photon emissions from single semiconductor quantum dots with V-type level driven by pulses are investigated theoretically. Based on quantum regression theorem and master equations, the dynamic equations of the second-order correlation function of the photon emissions are deduced. The calculated results reveal that the efficiency of single photon emissions from two orthogonal polarization eigenstates （｜x） and ｜y） ） reaches the maximum when the input pulses area is about π, and the probability of the cross-polarized single photon emission from ｜x） and ｜y） decreases with increasing of pulse width.     

Spin Relaxation of Electrons in Single InAs Quantum Dots

By using polarization-resolved photoluminescence spectra, we study the electron spin relaxation in single InAs quantum dots （QDs） with the configuration of positively charged excitons X＋ （one electron, two holes）. The spin relaxation rate of the hot electrons increases with the increasing energy of exciting photons. For electrons localized in QDs the spin relaxation is induced by hyperfine interaction with the nuclei. A rapid decrease of polarization degree with increasing temperature suggests that the spin relaxation mechanisms are mainly changed from the hyperfine interaction with nuclei into an electron-hole exchange interaction.     

Single-Photon Emission from a Single InAs Quantum Dot

Excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of single InAs quantum dots. Exciton and biexciton emissions, whose photoluminescence intensities have linear and quadratic excitation power dependences, respectively, are identified. Under pulsed laser excitation, the zero time delay peak of second order correlation function corresponding to exciton emission is well suppressed, which is a clear evidence of single photon emission.     

InAs/GaAs单量子点中电子/空穴自旋弛豫

利用分子束外延制备了三种类型量子点样品,它们分别是:未掺杂样品、n型Si调制掺杂样品和p型Be调制掺杂样品。在5 K温度下,采用共聚焦显微镜系统,测量了单量子点的光致发光谱和时间分辨光谱, 研究了单量子点中三种类型激子(本征激子、负电荷激子和正电荷激子)的电子/空穴自旋翻转时间。它们的自旋翻转时间常数分别为: 本征激子的自旋翻转时间约16 ns, 正电荷激子中电子的自旋翻转时间约2 ns, 负电荷激子中空穴的自旋翻转时间约50 ps。     

Temperature Dependence of Photoluminescence from Single and Ensemble InAs/GaAs Quantum Dots

We investigate the temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots systematically. As temperature increases, the exciton emission peak for single quantum dot shows broadening and redshift. For ensemble quantum dots, however, the exciton emission peak shows narrowing and fast redshift. We use a simple steady-state rate equation model to simulate the experimental data of photoluminescence spectra. It is confirmed that carrier-phonon scattering gives the broadening of the exciton emission peak in single quantum dots while the effects of carrier thermal escape and retrapping play an important role in the narrowing and fast redshift of the exciton emission peak in ensemble quantum dots.     

Be掺杂InAs处组织量子点的发光特性

首次细致地研究了ＩｎＡｓ量子点中直接掺杂Ｂｅ对其发光特性的影响。光致发光（ＰＬ）谱的研究表明,较低掺杂浓度时,发光峰蓝移,同时伴随着发光谱线变窄。而较高浓度的掺杂会对量子点的光谱特性产生不良的影响,发光强度明显变弱。相信该研究对ＩｎＡｓ自组织量子点在器件应用方面有很重要的意义。     

Be掺杂InAs自组织量子点的发光特性

首次细致地研究了InAs量子点中直接掺杂Be对其发光特性的影响.光致发光(PL)谱的研究表明, 较低掺杂浓度时, 发光峰蓝移, 同时伴随着发光谱线变窄.而较高浓度的掺杂会对量子点的光谱特性产生不良的影响, 发光强度明显变弱.相信该研究对InAs自组织量子点在器件应用方面有很重要的意义.     

Source of Indistinguishable Single Photons Based on Epitaxial InAs/GaAs Quantum Dots for Integration in Quantum Computing Schemes

JETP Letters - The characteristics of single photons emitted by columnar microstructures based on epitaxial microcavity heterostructures with distributed Bragg reflectors, which include...     

Second-Order Correlation Function of the Photon Emission from a Single Quantum Dot

The photon correlation of photon emission from a single quantum dot with cw excitation and pulsed excitation is investigated in details. To calculate the second-order correlation function for optical pumping, we deduce rate equations with a simplified two-level model under cw excitation and present the master equation approach in the interaction picture to the study of evolution of a three-level system under pulsed excitation. In addition, we report photon correlation measurements on a single self-assembled In0.5Ga0.5As quantum dot, which show strong antibunching behaviour under both the conditions of cw and pulsed excitations. The calculated results are in agreement with the experimental measurements.     

Single-Photon Emission at Liquid Nitrogen Temperature from a Single InAs/GaAs Quantum Dot

We report on the single photon emission from single InAs/GaAs self-assembled Stranski-Krastanow quantum dots up to 80 K under pulsed and continuous wave excitations. At temperature 8OK, the second-order correlation function at zero time delay, g^（2）（0）, is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.     

Cr-Doped InAs Self-Organized Diluted Magnetic Quantum Dots with Room-Temperature Ferromagnetism

Cr-doped InAs self-organized diluted magnetic quantum dots （QDs） are grown by low-temperature molecularbeam epitaxy. Magnetic measurements reveal that the Curie temperature of all the InAs：Cr QDs layers with Cr/In flux ratio changing from 0.026 to 0.18 is beyond 400 K. High-resolution cross sectional transmission electron microscopy images indicate that InAs：Cr QDs are of the zincblende structure. Possible origins responsible for the high Curie temperature are discussed.     

光致发光谱研究自组织InAs双模量子点态填充

采用固态源分子束外延技术在GaAs(100)衬底上,制备了InAs量子点,对样品进行原子力显微镜测试,统计结果表明量子点尺寸呈双模分布。光致发光谱研究表明,在室温和77 K下,小量子点的发光峰均占主导地位,原因可能是：(1)大量子点的态密度小于小量子点;(2)捕获载流子速率,大量子点小于小量子点;(3)大量子点与盖层存在较大的应变势垒和可能出现的位错和缺陷,导致温度变化引起载流子从小尺寸量子点转移到大尺寸的量子点中概率很小。     

Two Electrons with Spin-Orbit Interactions in InAs Coupled Quantum Dots

We theoretically study the spin properties of two interacting electrons confined in the IhAs parallel coupled quantum dots （CQDs） with spin-orbit interactions （SOI） by exact diagonalization method. Through the SOI induced spin mixing of the singlet and the triplet states, we show the different spin properties for the weak and strong SOI. We investigate the coherent singlet-triplet spin oscillations of the two electrons under the SOI, and demonstrate the detailed behaviors of the spin oscillations depending on the SOI strengths, the inter-dot separations and the external magnetic fields. To better understand the underlying physics of the spin dynamics, we introduce a four-level model Hamiltonian for both weak and strong SOI, and find that the SOI induced in plane effective magnetic fields can be quantitatively extracted from the two-electron excitation energy spectra.     

Extremely Low Density InAs Quantum Dots with No Wetting Layer

Extremely low density InAs quantum dots （QDs） are grown by molecular beam droplet epitaxy. The gallium deposition amount is optimized to saturate exactly the excess arsenic atoms present on the GaAs substrate surface during growth, and low density InAs/GaAs QDs （4× 10^6 cm^-2） are formed by depositing 0.65 monolayers （MLs） of indium. This is much less than the critical deposition thickness （1.7 ML）, which is necessary to form InAs/GaAs QDs with the conventional Stranski-Krastanov growth mode. The narrow photoluminescence linewidth of about 24 meV is insensitive to cryostat temperatures from IO K to 250K. All measurements indicate that there is no wetting layer connecting the QDs.     

Quantum Nonlocality of Single Photon State?

In the paper with the above title [1] (but without the question mark), it is claimed that quantum nonlocality can be revealed in a simple interferometry experiment using only single particle. A critical analysis of the concept of hidden variable used by the authors of [1] shows that the reasoning is not correct.