Resonant Raman scattering in nanostructures with InGaAs/AlAs quantum dots

Raman scattering by optical phonons in In_xGa_{1 ? x} As/AlAs nanostructures with quantum dots has been studied experimentally for compositions corresponding to x = 0.3?1 under out-resonance conditions. Features due to scattering by GaAs-and InAs-like optical phonons in quantum dots have been detected, and the phonon frequencies have been determined as a function of the dot composition. With increasing excitation energy, a red shift is observed in the frequency of the GaAs-like phonon in quantum dots, which testifies to Raman scattering selective by the size of quantum dots. Under resonant conditions, multiphonon light scattering by optical and interface phonons is observed up to the third order, including overtones of the first-order phonons of InGaAs and AlAs materials and their combinations.     

Optical vibration modes in (Cd,Pb, Zn)S quantum dots in the Langmuir-Blodgett matrix

The structures with CdS, PbS, and ZnS quantum dots produced using the Langmuir-Blodgett method are investigated by infrared (IR) spectroscopy, Raman scattering, and ultraviolet (UV) spectroscopy. The quantum dot size estimated from the UV spectra and high-resolution transmission electron microscopy (HRTEM) falls in the range 2–6 nm. The longitudinal optical (LO) phonons localized in quantum dots and the surface optical vibration modes are revealed in the IR reflection and Raman scattering spectra of the structures under investigation. The frequencies of the surface optical modes are adequately described with allowance made for the effect of localizing optical phonons in the quantum dots.     

Surface enhanced Raman scattering by CdS quantum dots

Surface enhanced Raman scattering is studied in nanostructures with CdS quantum dots formed using the Langmuir-Blodgett technology. Features due to quantum dot longitudinal optical phonons are observed in the Raman spectra of both free CdS quantum dots and such dots distributed in an organic matrix. The surface enhanced Raman scattering by nanostructures with CdS quantum dots covered by an Ag cluster film is observed experimentally. Applying Ag clusters onto the nanostructure surfaces results in a sharp (40-fold) increase in the intensity of Raman scattering by optical phonons in the quantum dots. It is shown that the dependence of surface enhanced Raman scattering on the excitation energy is resonant with a maximum at the energy corresponding to the maximum absorption coefficient of Ag clusters.     

Multipole-based modal analysis of gate-defined quantum dots in graphene

A new numerical method based on the multipoles of the Dirac equation is presented for rigorous and fast analysis of electron scattering from gate-defined structures in graphene. The new method is used to study the strongly bound states and the weakly bound states of a circular quantum dot. The accuracy of the obtained results is then verified by the T-matrix method. Furthermore, we characterize the resonances of elliptical gate-defined quantum dots and compare these resonances with the strongly bound states of circular dots. The effects of coupling between two quantum dots are also investigated.     

Elastic light scattering by semiconductor quantum dots of arbitrary shape

Elastic light scattering by low-dimensional quantum objects without a change in the frequency is theoretically investigated in terms of the quantum perturbation theory. The differential cross section of resonance light scattering from any excitons in any quantum dots is calculated. It is demonstrated that, when the light wavelengths considerably exceed the quantum-dot size, the polarization and angular distribution of the scattered light do not depend on the shape, the size, or the configuration of quantum dots. In this case, the total light scattering cross section is independent of the quantum-dot size. If the radiative damping of an exciton exceeds the nonradiative damping, the total light scattering cross section at resonance is of the order of the light wavelength squared. The radiative damping associated with the long-range exchange interaction between electrons and holes is calculated for any excitons and any quantum dots.     

Probing collective modes of correlated states of few electrons in semiconductor quantum dots

Low-lying collective excitations above highly correlated ground states of few interacting electrons confined in GaAs semiconductor quantum dots are probed by resonant inelastic light scattering. We highlight that separate studies of the changes in the spin and charge degrees of freedom offer unique access to the fundamental interactions. The case of quantum dots with four electrons is found to be determined by a competition between triplet and singlet ground states that is uncovered in the rich light scattering spectra of spin excitations. These light scattering results are described within a configuration-interaction framework that captures the role of electron correlation with quantitative accuracy. Recent light scattering results that reveal the impact of anisotropic confining potentials in laterally coupled quantum dots are also reviewed. In these studies, inelastic light scattering methods emerge as powerful probes of collective phenomena and spin configurations in quantum dots with few electrons.     

Resonant Raman scattering by strained and relaxed germanium quantum dots

This paper reports on the results of resonant Raman scattering investigations of the fundamental vibrations in Ge/Si structures with strained and relaxed germanium quantum dots. Self-assembled strained Ge/Si quantum dots are grown by molecular-beam epitaxy on Si(001) substrates. An ultrathin SiO₂ layer is grown prior to the deposition of a germanium layer with the aim of forming relaxed germanium quantum dots. The use of resonant Raman scattering (selective with respect to quantum dot size) made it possible to assign unambiguously the line observed in the vicinity of 300 cm^?1 to optical phonons confined in relaxed germanium quantum dots. The influence of confinement effects and mechanical stresses on the vibrational spectra of the structures with germanium quantum dots is analyzed.     

CdTe量子点的光谱特性及其应用

研究了水相CdTe量子点的共振散射光谱、荧光光谱和吸收光谱特性。结果表明,随着量子点粒径(d)的增大,CdTe量子点的荧光峰(λ_F)发生红移,吸收峰也发生红移,且吸收峰(λ_A)的峰形变宽、吸光度(A)降低,λ与ln(d)均存在较好的线性关系。其函数关系为λ_A =126.74 ln(d)+395.92和λ_F=155.01 ln(d) +415.5。共振散射光谱研究表明, 共振散射波长λ_R与CdTe量子点粒径（3.8～8.6 nm）的对数存在较好的线性关系,线性回归方程为λ_R=148.37 ln(d)+418.08, 相关系数为0.995 2,而且同一粒径的CdTe量子点,共振散射强度与CdTe量子点的浓度也存在良好的线性关系,粒径为3.8 nm的CdTe量子点在波长597 nm处的线性范围,回归方程,相关系数分别为：22.5～180.0 μmol·L-1;I_{597 nm}=0.572 1c+5.884,0.997 5。共振散射光谱法作为检测CdTe量子点粒径的一种新方法,具有简便快速及较好的应用价值。     

Quantum kinetic theory of phonon-assisted carrier transitions in nitride-based quantum-dot systems

A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to quasi-particle renormalizations. The electronic states of the interacting system are strongly modified by the combined influence of quantum confinement and polar coupling. Inherent electrostatic fields, typical for InGaN/GaN quantum dots, do not limit the fast scattering channels.     

Determining angles of incidence and heights of quantum dot faces by analyzing X-ray diffuse and specular scattering

Scattering of X rays by structures with multilayer ensembles of quantum dots MBE-grown in the In(Ga)As-GaAs system is studied by high-resolution grazing X-ray reflectometry. The peaks of the diffuse scattering intensity are discovered for the first time in structures with both vertically uncorrelated and vertically correlated quantum dots. It is shown that the position of the peak is totally determined by angle of inclination of the quantum dot pyramidal faces (the so-called blaze condition for diffraction gratings), which was theoretically predicted earlier. Comparison with the results of scattering simulation carried out by the technique of boundary integral equations indicates that a simple geometrical condition allows one to exactly determine the value of from the position of the intensity peak, the shape of which depends on many parameters. As follows from the theory and experiment, the width and height of the peaks for samples with vertically correlated quantum dots are larger than for those with uncorrelated dots. The roughness and interdiffusion of interfaces and the height of quantum dots are found from the position and amplitude of Bragg peaks. Thus, the conventional application of high-resolution grazing X-ray reflectometry is extended in this work to determination of the quantum dot geometry.     

Phonons in Ge/Si superlattices with Ge quantum dots

Ge/Si superlattices containing Ge quantum dots were prepared by molecular beam epitaxy and studied by resonant Raman scattering. It is shown that these structures possess vibrational properties of both two-and zero-dimensional objects. The folded acoustic phonons observed in the low-frequency region of the spectrum (up to 15th order) are typical for planar superlattices. The acoustic phonon lines overlap with a broad emission continuum that is due to the violation of the wave-vector conservation law by the quantum dots. An analysis of the Ge and Ge-Si optical phonons indicates that the Ge quantum dots are pseudoamorphous and that mixing of the Ge and Si atoms is insignificant. The longitudinal optical phonons undergo a low-frequency shift upon increasing laser excitation energy (2.54–2.71 eV) because of the confinement effect in small-sized quantum dots, which dominate resonant Raman scattering.     

Sizes and fluorescence of cadmium sulfide quantum dots

Cadmium sulfide quantum dots have been synthesized by wet chemical deposition from an aqueous solution. The sizes of the quantum dots determined by dynamic light scattering directly in the colloidal solution and by intermittent-contact atomic force microscopy in the dry sediment agree with each other. It has been found that splitting of the fluorescence peaks of the quantum dots can be affected by the disorder of the atomic structure of cadmium sulfide quantum dots.     

基于明胶制备碳量子点及其光学性能的研究

通过水热法采用热解明胶制备出有蓝色荧光的碳量子点,并通过单因素优化实验对制备碳量子点的温度、时间进行优化以选择出制备碳量子点的最佳条件,结果表明在水热反应温度为200 ℃,反应时间为6 h时制备的碳量子点的荧光性能最强。同时,利用透射电子显微镜(TEM)、傅里叶变换红外光谱(FTIR)、X射线光电子能谱(XPS)、Ｘ射线衍射(XRD)、紫外-可见吸收光谱(UV)及荧光光谱(PL)等手段对最佳条件下制备的碳量子点进行测试与表征,结果表明,该方法制备的碳量子点量子产率为39.4%,与不掺杂的碳量子点相比其量子产率相对较高,这可能是因为有N元素的存在使得量子产率有所提高;所制备的碳量子点不仅具有丰富的含氧官能团而且抗光漂白性能良好,形态主要是均匀分散的球形,没有明显的晶格条纹,这与相关文献报道的碳量子点的形态相一致,其在250～300 nm有较弱的吸收,但无明显的特征吸收峰,这可能是由于C=O基团的n-π*跃迁引起的;此外,还讨论了氙灯照射时间、pH、碳量子点浓度、不同类型溶剂及离子强度等因素对碳量子点荧光性能的影响,研究结果表明,氙灯照射时间及离子强度对碳量子点荧光性能几乎无影响,在过酸或过碱的条件下其荧光强度相对较弱,原因可能是在过酸或过碱的条件下发生质子化或非质子化的作用导致其荧光强度减弱;且碳量子点溶液随着其浓度的增加,荧光强度先增加后减小;而对于溶剂类型而言,其在极性溶剂中的荧光强度大于其在非极性溶剂中的荧光强度,说明该方法制备的碳量子点具有良好的水溶性。     

GaN基量子点结构的喇曼特征

采用量子力学的微扰理论，对GaN基量子点结构的喇曼频移进行分析。在喇曼实验中，观察InGaN／GaN量子点结构的E2和A1(LO)的模式，并发现实验中样品的喇曼频移与GaN的体材料相比，有着明显的红移。     

Coherent and diffuse X-ray scattering from a multicomponent superlattice with quantum dots

GaAs-AlAs superlattices with InAs quantum dots grown by molecular beam epitaxy have been studied by high-resolution X-ray diffractometry. It has been experimentally revealed that the maxima of the superstructural diffuse scattering from the quantum dots do not coincide with the angular positions of the coherent superstructural satellites. A statistical theory of diffraction on the superlattice taking into account the spatial correlation of the quantum dots has been developed to explain this effect. It has been shown within this theory that the peak positions of the diffuse component can differ from the maxima of the coherent scattering. X-ray scattering by the multicomponent superlattice have been numerically simulated and the calculation results have been compared with the experimental data.     

Electron-longitudinal-acoustic-phonon scattering in double-quantum-dot based quantum gates

We propose a nanostructure design which can significantly suppress longitudinal-acoustic-phonon-electron scattering in double-quantum-dot based quantum gates for quantum computing. The calculated relaxation rates vs. bias voltage exhibit a double-peak feature with a minimum approaching ¹⁰⁵ s⁻¹. In this matter, the energy conservation law prohibits scattering contributions from phonons with large momenta; furthermore, increasing the barrier height between the double quantum dots reduces coupling strength between the dots. Hence, the joint action of the energy conservation law and the decoupling greatly reduces the scattering rates. The degrading effects of temperatures can be reduced simply by increasing the height of the barrier between the dots.     

Effect of spatial correlation of quantum dots on X-ray diffuse scattering

A statistical kinematical theory of x-ray diffuse scattering by crystals with nanometer quantum dots is constructed. The theory takes into account the mutual correlation of the spatial arrangement of quantum dots.     

Temperature Dependence of Photoluminescence from Single and Ensemble InAs/GaAs Quantum Dots

We investigate the temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots systematically. As temperature increases, the exciton emission peak for single quantum dot shows broadening and redshift. For ensemble quantum dots, however, the exciton emission peak shows narrowing and fast redshift. We use a simple steady-state rate equation model to simulate the experimental data of photoluminescence spectra. It is confirmed that carrier-phonon scattering gives the broadening of the exciton emission peak in single quantum dots while the effects of carrier thermal escape and retrapping play an important role in the narrowing and fast redshift of the exciton emission peak in ensemble quantum dots.     

自组织生长的量子点结构及其光学特性

本文介绍量子点结构的自组织生长方法及量子点的光学性质。着重介绍量子点结构中的声子和拉曼散射的测量结果。此外，也介绍了自组织生长的量子点的形貌结构特性，电子结构和发光特性，电注入式量子点激光器的制备和性能     

Quasielastic scattering of light by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of InAs quantum dots

The development of a method for registering quasielastic electronic light scattering spectra in the near-IR region, which makes it possible to detect light scattering by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of a self-organized ensemble of InAs quantum dots, is reported. A substantial resonance intensification of such scattering, two orders of magnitude greater than the values established for the bulk material, is observed, and the main mechanism of such scattering is determined.