Multifractal analysis for Cu/Ti bilayer thin films

Two bilayer thin films with different stacking sequences, Cu/Ti/Si and Ti/Cu/Si, were deposited by DC magnetron sputtering technique. X‐ray diffraction technique was used to measure the crystallization structures, and scanning electron microscopy and atomic force microscopy were used to measured surface morphology. The multifractal spectra f(α)‐α was used to characterize the surface morphology. The result of |q|_max ≤ 53 is obtained by multifractal analysis. The shape of the multifractal spectra f(α) ? α is hook‐like for Cu/Ti/Si and bell jar‐like for Ti/Cu/Si. The spectrum width Δα = α_max ? α_min and Δf(=f(α_min) ? f(α_max)) of the multifractal spectra is able to quantitatively analyze the growth and surface roughness of the Cu/Ti bilayer thin films. The surface of Ti/Cu/Si thin film is more uniform and smoother than the film of Cu/Ti/Si. Copyright © 2013 John Wiley & Sons, Ltd.     

Streamlined ellipsometry procedure for characterizing physical aging rates of thin polymer films

Existing studies in the research literature showing conflicting changes in physical aging rates with decreasing film thickness in nanoconfined polymer films highlight the need for a single experimental technique to efficiently characterize physical aging rates in thin polymer films of varying chemical structure. To that end, we have developed a streamlined ellipsometry procedure to measure the structural relaxation of thin glassy polymer films. We evaluate different methods of calculating a physical aging rate β from the measured thickness h(t) and index of refraction n(t) data. We present extensive measurements of β as a function of aging temperature and aging time for polystyrene (PS) films supported on silicon, and determine that the physical aging rate β can be easily and reliably determined from β = −1/h₀ dh/d(log t), where h₀ is the initial measure of the film thickness at an aging time of 10 min. We have also carried out oxygen permeation studies on poly(methyl methacrylate) (PMMA) films from 800 μm down to 190 nm in thickness, and find no change in the permeability with film thickness or physical aging at room temperature for up to 65 days, which suggests that gas permeation may be insensitive to physical aging in such low free volume polymers. © 2009 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 47: 2509–2519, 2009     

Influence of Substrate-Target Distance on Structural and Optical Properties of Ga and (Al + Ga)-doped ZnO Thin Films Deposited by Radio Frequency Sputtering

Ga-doped ZnO and (Ga?+?Al) co-doped ZnO thin films were deposited on glass substrates by radio frequency magnetron sputtering for three distances d between a substrate–target. The influence of the distance between substrate–target upon structure, microstructure, vibrational properties, and optical band gap of the thin films was analyzed by X-ray diffraction, atomic force microscopy (AFM), Raman spectroscopy, and optical transmission measurements. The diffraction patterns revealed that the ZnO film crystallites are preferentially oriented with the (002) planes parallel to the substrate surface. AFM images show a smooth and uniform surface as well as a high compact structure. The Raman results reveal that the co-doping with Al?+?Ga introduces 2B₁(low) band and leads to the increase of intensity for longitudinal-optic’s band. In the visible region, the average value of the transmittance was above 80%.     

Study of Scaling Exponents of the Surface Evolved in 2 + 1 Dimension through Competitive Growth between Random Deposition and that with Surface Relaxation

Rough surface develops through computer simulation by competition between growth mechanism random deposition (RD) with a probability of occurrence p and growth mechanism random deposition with surface relaxation (RDSR) with a probability of occurrence 1 − p, on L × L square plane for system size L to record the statistical average of time variation of surface roughness W(L, t) and average height H(t) for the model for specific values of L and p. Other than the pure RD model, the entire evolution may be divided into three regions separated by two specific cross-over times t_x and t_sat. The value of interface width at saturation W_sat depends on both L and p. The first growth exponent β₁ increases exponentially with an increase in p and does not depend on L. The values of the second growth exponent β₂, roughness exponent α, dynamic exponent z( = α/β₂ ), and α + z are 0.0234 ± 0.0008, 0.0506 ± 0.0065, 2.1577 ± 0.0073, and 2.2083 ± 0.0138 respectively and they show no dependence on L and p values. Value of the first cross-over time t_x increases exponentially with an increase in p and does not depend on L. Value of the second cross-over time t_sat increases with an increase in both p and L values. The average growth velocity is unity for the model and is independent of both L and p. For the model, the growth velocity is unity and the fractional porosity is zero. The scaling exponents show some deviation from the relevant universality classes and depend on competitive growth probability for this model. No finite-size effect is present in the model.     

非晶氮化铁薄膜的生长机制——传统动力学生长标度方法的适用性

采用动力学标度方法研究了磁控溅射沉积的非晶氮化铁薄膜的动力学生长机制, 结果表明, 具有连续类柱状岛形貌的非晶氮化铁薄膜具有标度不变的自仿射分形特点, 其粗糙度指数α=0.82±0.21, 生长指数β=0.44±0.07, 动力学标度指数1/z=0.54±0.07. 薄膜生长符合提出的热重新发射生长模型.     

Multifractal analysis of drop‐casted copper (II) tetrasulfophthalocyanine film surfaces on the indium tin oxide substrates

This paper applies multifractal spectrum theory to characterize the structural complexity of 3D surface roughness of copper (II) tetrasulfophthalocyanine (CuTsPc) films on the indium tin oxide (ITO) substrate, obtained with atomic force microscopy (AFM) analysis. CuTsPc films were prepared by drop cast method on ITO substrate. CuTsPc films surface roughness was studied by AFM in tapping‐mode?, in air, on square areas of 2500 µm². A novel approach, on the basis of computational algorithms for analysis of 3D roughness surface applied for AFM data, was presented. Results revealed that the 3D surface roughness of CuTsPc films prepared by drop cast method on ITO substrate can be described using the multifractal geometry. The generalized dimensions D_q and the multifractal spectrum f(α) provided quantitative values that characterize the local scale properties of CuTsPc films surface geometry at nanometer scale. Data provide valuable information to describe the spatial arrangement of 3D surface roughness of CuTsPc films on ITO substrate, which was not taken into account by classical surface statistical parameters. Copyright © 2014 John Wiley & Sons, Ltd.     

Medium energy,heavy and inert ion irradiation of metallic thin films: studies of surface nano‐structuring and metal burrowing

In context to the ion induced surface nanostructuring of metals and their burrowing in the substrates, we report the influence of Xe and Kr ion‐irradiation on Pt:Si and Ag:Si thin films of ~5‐nm thickness. For the irradiation of thin films, several ion energies (275 and 350 keV of Kr; 450 and 700 keV of Xe) were chosen to maintain a constant ratio of the nuclear energy loss to the electronic energy loss (S_n/S_e) in Pt and Ag films (five in present studies). The ion‐fluence was varied from 1.0 × 10¹⁵ to 1.0 × 10¹⁷ ions/cm². The irradiated films were characterized using Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The AFM and SEM images show ion beam induced systematic surface nano‐structuring of thin films. The surface nano‐structures evolve with the ion fluence. The RBS spectra show fluence dependent burrowing of Pt and Ag in Si upon the irradiation of both ion beams. At highest fluence, the depth of metal burrowing in Si for all irradiation conditions remains almost constant confirming the synergistic effect of energy losses by the ion beams. The RBS analysis also shows quite large sputtering of thin films bombarded with ion beams. The sputtering yield varied from 54% to 62% by irradiating the thin films with Xe and Kr ions of chosen energies at highest ion fluence. In the paper, we present the experimental results and discuss the ion induced surface nano‐structuring of Pt and Ag and their burrowing in Si. Copyright © 2016 John Wiley & Sons, Ltd.     

Cross‐Linked Multilayers of Poly(vinyl amine) as a Single Component and Their Interaction with Proteins

Novel multilayer thin films that consist solely of cross‐linked single component layers are generated by a selective cross‐linking of the poly(vinyl amine) (PVAm) layers in [PVAm/poly(acrylic acid) (PAA)]_n thin films constructed either on silica particles or silicon wafers, followed by the removal of PAA. The surface topography of the (PVAm)_n multilayer thin films, before and after the adsorption of human serum albumin (HSA), has been studied by atomic force microscopy on the freeze‐dried films. The decrease of the average roughness of the film after the adsorption of HSA showed the protein was adsorbed into the (PVAm)_n film making these films potential reservoirs for proteins.

     

总气压与Ar/O2流量比对直流对向靶磁控溅射TiO2薄膜光催化性能的影响

采用对向靶磁控溅射法在不同气压和Ar/O₂流量比条件下, 以氟化SnO₂ (FTO)导电玻璃为基底制备了多晶TiO₂薄膜. 台阶仪测量结果显示所制备TiO₂薄膜的平均厚度约为200 nm. 随着溅射气压的升高, TiO₂薄膜由锐钛矿与金红石混晶结构转变为纯锐钛矿结构. 分别采用场发射扫描电镜(FESEM)和原子力显微镜(AFM)分析了不同气压和Ar/O₂流量比对TiO₂薄膜表面形貌的影响, 结果显示TiO₂薄膜的表面粗糙度随溅射总气压和Ar/O₂流量比的增加而增大. 以初始浓度为100×10^-6 (体积分数)的异丙醇(IPA)气体为目标物检测所制备TiO₂薄膜的光催化性能, 并分析该气相光催化反应的机理, 在紫外照射条件下异丙醇先氧化为丙酮再被氧化为CO₂.当总溅射气压为2.0 Pa、Ar/O₂流量比为1:1时, 溅射所得TiO₂薄膜具备最优光催化活性并可在IPA降解反应中保持较高的催化活性和稳定性.     

A High‐Performance Organic Field‐Effect Transistor Based on Platinum(II) Porphyrin: Peripheral Substituents on Porphyrin Ligand Significantly Affect Film Structure and Charge Mobility

Organic field‐effect transistors incorporating planar π‐conjugated metal‐free macrocycles and their metal derivatives are fabricated by vacuum deposition. The crystal structures of [H₂(OX)] (H₂OX=etioporphyrin‐I), [Cu(OX)], [Pt(OX)], and [Pt(TBP)] (H₂TBP=tetra‐(n‐butyl)porphyrin) as determined by single crystal X‐ray diffraction (XRD), reveal the absence of occluded solvent molecules. The field‐effect transistors (FETs) made from thin films of all these metal‐free macrocycles and their metal derivatives show a p‐type semiconductor behavior with a charge mobility (μ) ranging from 10^?6 to 10^?1 cm² V^?1 s^?1. Annealing the as‐deposited Pt(OX) film leads to the formation of a polycrystalline film that exhibits excellent overall charge transport properties with a charge mobility of up to 3.2×10^?1 cm² V^?1 s^?1, which is the best value reported for a metalloporphyrin. Compared with their metal derivatives, the field‐effect transistors made from thin films of metal‐free macrocycles (except tetra‐(n‐propyl)porphycene) have significantly lower μ values (3.0×10^?6–3.7×10^?5 cm² V^?1 s^?1).     

Interpreting the conductive atomic force microscopy measured inhomogeneous nanoscale surface electrical properties of Al‐doped ZnO films

In this work, conductive atomic force microscopy is used to study the inhomogeneous surface electrical conductivity of Al‐doped ZnO thin films at a nanoscale dimension. To this end, Al‐doped ZnO films were deposited onto the soda lime glass substrates at substrate temperature (T_s) varying from 303 to 673 K in radio frequency magnetron sputtering. The obtained local surface electrical conductivity values are found to be influenced by their bulk electrical resistivity, surface topography and tip geometry. Further, the average (local) surface conductivity from the film surface is found to increase with increasing T_s from 303 to 623 K, beyond which they decrease until 673 K. Copyright © 2016 John Wiley & Sons, Ltd.     

Slope analysis and scaling analysis of electrodeposited thin films

We introduce slope analysis as a straightforward complement to scaling analysis for characterizing the morphology of electrodeposited thin films. The surface slope θ, defined as the angle between the local surface normal and the film normal, is calculated as a function of position for electrodeposited Cu films of increasing thickness t. We show that the mean value of θ increases with t and demonstrate the close relationship between this observation and the increase in local roughness found in previous studies from scaling analysis.     

Crystal thin film of bis (imidazole) silver(I) nitrate for all optical switching application

The single crystal of a silver complex bis (imidazole) silver(I) nitrate (Ag(C₃H₄N₂)₂(NO₃), BISN) has been obtained and characterized by X‐ray single‐crystal diffraction. Its crystal thin film was prepared using direct growth on quartz substrates. The surface morphology of the thin film was studied by atomic force microscopy (AFM). The nonlinear optical (NLO) properties of the thin film were investigated by using closed‐aperture Z‐scan technique with 20 picosecond (ps) pulses at wavelength 532 nm. Using time‐dependent density‐functional theory (TDDFT) with the basis set LanL2DZ, its linear and NLO properties were calculated.     

Comparative characterisation by atomic force microscopy and ellipsometry of soft and solid thin films

Ellipsometry and atomic force microscopy (AFM) were used to study the film thickness and the surface roughness of both ‘soft’ and solid thin films. ‘Soft’ polymer thin films of polystyrene and poly(styrene–ethylene/butylene–styrene) block copolymer were prepared by spin‐coating onto planar silicon wafers. Ellipsometric parameters were fitted by the Cauchy approach using a two‐layer model with planar boundaries between the layers. The smooth surfaces of the prepared polymer films were confirmed by AFM. There is good agreement between AFM and ellipsometry in the 80–130 nm thickness range. Semiconductor surfaces (Si) obtained by anisotropic chemical etching were investigated as an example of a randomly rough surface. To define roughness parameters by ellipsometry, the top rough layers were treated as thin films according to the Bruggeman effective medium approximation (BEMA). Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased etching time, although AFM results depend on the used window size. The combined use of both methods appears to offer the most comprehensive route to quantitative surface roughness characterisation of solid films. Copyright © 2007 John Wiley & Sons, Ltd.     

Bioactivity and mechanical properties of nickel‐incorporated hydrogenated carbon nanocomposite thin films

In this paper, the influence of nickel incorporation on the mechanical properties and the in vitro bioactivity of hydrogenated carbon thin films were investigated in detail. Amorphous hydrogenated carbon (a‐C:H) and nickel‐incorporated hydrogenated carbon (Ni/a‐C:H) thin films were deposited onto the Si substrates by using reactive biased target ion beam deposition technique. The films' chemical composition, surface roughness, microstructure and mechanical properties were investigated by using XPS, AFM, TEM, nanoindentation and nanoscratch test, respectively. XPS results have shown that the film surface is mainly composed of nickel, nickel oxide and nickel hydroxide, whereas at the core is nickel carbide (Ni₃C) only. The presence of Ni₃C has increased the sp² carbon content and as a result, the mechanical hardness of the film was decreased. However, Ni/a‐C:H films shows very low friction coefficient with higher scratch‐resistance behavior than that of pure a‐C:H film. In addition, in vitro bioactivity study has confirmed that it is possible to grow dense bone‐like apatite layer on Ni/a‐C:H films. Thus, the results have indicated the suitability of the films for bone‐related implant coating applications. Copyright © 2011 John Wiley & Sons, Ltd.     

Effect of surfactant adsorption time on the observation of Newton black film in foam film

Observation of Newton black film (NBF) in foam film is possible only with a certain probability W which depends on the concentration C of surfactant in the solution and on the time t_a during which adsorption of surfactant at the solution/air interface has taken place. In the paper, the W(C,t_a) dependence is derived and used to analyze the effect of t_a on the critical surfactant concentration C_c below which NBF in foam film practically cannot be observed. An expression for the C_c(t_a) function is obtained which reveals that C_c decreases substantially with increasing t_a. This expression is found to describe well experimental C_c(t_a) data for foam films obtained from aqueous solution of the therapeutic surfactant INFASURF.     

Photosensitivity of CuBiSe2 Thin Film Deposited by Vacuum Evaporation Technique

CuBiSe₂ (CBSe) thin film was prepared by vacuum evaporation. The deposited film was characterized by X‐ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X‐ray (EDX), UV–visible specroscopy, and I–V analysis. XRD analysis indicates the formation of cubic CBSe thin film, and the corresponding EDX spectrum confirms the stoichiometry composition of CBSe. In the AFM images, the majority of the particles are granular, and the surface roughness is 8.86 nm. The optical absorption coefficient is >10⁴ in the visible region and the bandgap energy is calculated to be 1.84 eV. The photosensitivity of the film is 181%.     

Nitridation of V5Al8 films with NH3 by Rapid Thermal Processing (RTP)

V₅Al₈ films (thickness about 100 nm) were deposited on sapphire substrates by RF‐sputtering and nitridated with NH₃ at 600‐1250 °C (1 min) in a RTP system. The as deposited and nitridated films were investigated by ESCA (electron spectroscopy for chemical analysis), XRD (X‐ray diffraction), XRR (X‐ray reflectometry), AFM (atomic force microscopy) and SEM (scanning electron microscopy). Formation of an aluminum nitride layer at the surface and precipitation of V(Al) in the bulk was found. In the temperature regime from 600 °C to 900 °C a considerable amount of oxygen is incorporated in the aluminum nitride layer. The roughness of the surface increased with increasing temperature and at 1250 °C a partially detaching of the AlN layer could be observed.     

Impact of high N2 flow ratio on the chemical and morphological characteristics of sputtered N‐DLC films

Because of their outstanding characteristics, diamond‐like carbon (DLC) thin films have been recognized as interesting materials for a variety of applications. For this reason, the effects of the incorporation of different elements on their fundamental properties have been the focus of many studies. In this work, nitrogen‐incorporated DLC films were deposited on Si (100) substrates by DC magnetron sputtering of a graphite target under a variable N₂ gas flow rate in CH₄ + N₂ + Ar gas mixtures. The influence of high N₂ flow ratios (20, 40 and 60%) on the chemical, structural and morphological properties of N‐DLC films was investigated. Different techniques including field emission gun‐equipped scanning electron microscope (FEG‐SEM), energy‐dispersive X‐ray spectroscopy (EDS), atomic force microscopy (AFM), profilometry, Rutherford backscattering spectrometry (RBS) and Raman spectroscopy (325‐nm and 514‐nm excitation) were used to examine the properties of the N‐DLC films. Thus, the incorporation of nitrogen was correlated with the morphology, roughness, thickness, structure and chemical bonding of the films. Overall, the results obtained indicate that the fundamental properties of N‐DLC films are not only related to the nitrogen content in the film but also to the type of chemical bonds formed. Copyright © 2016 John Wiley & Sons, Ltd.     

Thickness dependence of structural relaxation in spin‐cast polynorbornene films with high glass transition temperatures (>613 K)

The isothermal structural relaxation (densification) of a family of glassy polynorbornene films with high glass transition temperatures (T_g > 613 K) is assessed via spectroscopic ellipsometry. Three polymers were examined: poly(butylnorbornene) (BuNB), poly(hydroxyhexafluoroisopropyl norbornene) (HFANB), and their random copolymer, BuNB‐r‐HFANB. The effective aging rate, β(T), of thick (∼1.2 μm) spun cast films of BuNB‐r‐HFANB is approximately 10⁻³ over a wide temperature window (0.49 < T/T_g < 0.68). At higher temperatures, these polymers undergo reactions that more dramatically decrease the film thickness, which prohibits erasing the process history by annealing above T_g. The aging rate for thick BuNB‐r‐HFANB films is independent of the casting solvent, which infers that rapid aging is not associated with residual solvent. β (at 373 K) decreases for films thinner than ∼500 nm. However, the isothermal structural relaxation of thin films of BuNB‐r‐HFANB exhibits nonmonotonic temporal evolution in thickness for films thinner than 115 nm film. The thickness after 18 h of aging at 373 K can be greater than the initial thickness. The rapid aging of these polynorbornene films is attributed to the unusual rapid local dynamics of this class of polymers and demonstrates the potential for unexpected structural relaxations in membranes and thin films of high‐T_g polymers that could impact their performance. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2018 , 56, 53–61