Synthesis and Characterization of Self-Assembled V2O5 Mesostructures Intercalated by Polyaniline

A new nanocomposite of vanadium pentoxide (V2O5) and polyaniline (PANI) were synthesized by in situ oxidative polymerization/intercalation on V2O5 powder at room temperature. The reaction was facile and topotactic, forming polyaniline as the emeraldine salt. It was indicated that V2O5 itself can catalyze the oxidative polymerization of aniline and that layered structure could make aniline intercalate into the V2O5 framework. It makes the in situ polymerization feasible to occur in the layer of V2O5 structure. XRD results showed PANI/V2O5 nanocomposite possessed lamellar mesostructure, which was determined by an X-ray diffraction peak at 6.5° and SEM photograph. And FT-IR spectrum suggested that there was interaction between PANI and V2O5. The hybrid had better thermal stability in N2 and air ambience.     

Synthesis, Characterization, and Conductivity Studies of Poly-o-Methoxyaniline Intercalated into V2O5 Xerogel

In this work we study the conductivity properties of poly-o-methoxyaniline/V₂O₅ intercalation compounds obtained through intercalative polymerization of o-methoxyaniline with V₂O₅·nH₂O in hydrogel form and by reacting directly with V₂O₅ film in de-hydrated form (xerogel). These new compounds were characterized using Fourier-transform infrared and ultra-violet/visible spectroscopies, electron paramagnetic resonance, elemental analysis (C, N, H), thermogravimetric analysis, scanning electron microscopy, dc-conductivity and powder X-ray diffraction. For samples formed from V₂O₅ xerogel in film form, an increase in dc-conductivity and a decrease in the thermal activation energy in comparison with pure matrix was observed. The increase in conductivity is attributed to an increase of carrier density in the vanadium oxide lattice and the contribution of polarons from the polymer. On the other hand, for the intercalation compound obtained with V₂O₅·nH₂O in hydrogel form presents a very low room temperature conductivity value. The decrease in conductivity is due to the lack of connectivity of the various parts that compose the material.     

Thin films of vanadium oxide grown on vanadium metal: oxidation conditions to produce V2O5 films for Li‐intercalation applications and characterisation by XPS,AFM, RBS/NRA

Thin films of vanadium oxide were grown on vanadium metal surfaces (i) in air at ambient conditions, (ii) in 5 mM H₂SO₄ (aq), pH 3, (iii) by thermal oxidation at low oxygen pressure (10^?5 mbar) at temperatures between 350 and 550 °C and (iv) at near‐atmospheric oxygen pressure (750 mbar) at 500 °C. The oxide films were investigated by atomic force microscopy (AFM), X‐ray photoelectron spectroscopy (XPS), X‐Ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA). The lithium intercalation properties were studied by cyclic voltammetry (CV). The results show that the oxide films formed in air at room temperature (RT), in acidic aqueous solution, and at low oxygen pressure at elevated temperatures are composed of V₂O₃. In air and in aqueous solution at RT, the oxide films are ultra‐thin and hydroxylated. At 500 °C, nearly atmospheric oxygen pressure is required to form crystalline V₂O₅ films. The oxide films grown at pO₂ = 750 mbar for 5 min are about 260‐nm thick, and consist of a 115‐nm outer layer of crystalline V₂O₅. The inner oxide is mainly composed of VO₂. For all high temperature oxidations, the oxygen diffusion from the oxide film into the metal matrix was considerable. The oxygen saturation of the metal at 450 °C was found, by XPS, to be 27 at.% at the oxide/metal interface. The well‐crystallized V₂O₅ film, formed by oxidation for 5 min at 500 °C and 750 mbar O₂, was shown to have good lithium intercalation properties and is a promising candidate as electrode material in lithium batteries. Copyright © 2005 John Wiley & Sons, Ltd.     

Effects of alicyclic moiety incorporation on the properties of polyimide/silica hybrid films

Polyimide (PI)/silica hybrid films were prepared from tetraethyl orthosilicate (TEOS) using a sol‐gel process as well as pyromellitic dianhydride and 4,4‐oxydianiline. 1,4‐Cyclohexanedicarboxylic acid (1,4‐CHDA) was added as a coupling agent. The PI/silica hybrid films were characterized by Fourier transform infrared spectroscopy, field emission scanning electron microscopy, differential scanning calorimetry and wide‐angle X‐ray diffraction. The thermal, tensile and dielectric properties of the hybrid films were measured. The results showed that the tensile and dielectric properties of the hybrid films improved with increasing silica concentration and 1,4‐CHDA content in the PI matrix. Covalent ester bonds were formed between SiOH groups of silica and carboxyl groups of 1,4‐CHDA. As a result, the silica particle size was reduced and dispersed homogeneously in the PI matrix, leading to increased tensile strength and tensile modulus of the typical hybrid film with 1,4‐CHDA (PI‐2), when compared with the PI/silica hybrid film without 1,4‐CHDA at the same silica contents. The presence of an alicyclic moiety containing silica in PI reduced the dielectric constant considerably to 2.83, which was lower than that of pristine PI. Copyright © 2016 John Wiley & Sons, Ltd.     

烷基紫精/五氧化二钒插层化合物的组装、表征及磁性的研究

以烷基紫精(alkylviologens; 又称紫精或紫罗精)为有机客体、层状五氧化二钒为无机主体, 在液、固两相反应体系中, 利用I^－与V^5＋的氧化还原反应, 使烷基紫精阳离子通过静电引力作用进入被还原的五氧化二钒层板之间, 形成一系列新颖的无机-有机插层化合物. 并运用X射线粉末衍射(XRD)、红外(FT-IR)、X射线光电子能谱(XPS)、紫外-可见漫反射(UV-vis DRS)等方法对其进行了表征. XRD分析结果证明, 五氧化二钒的层间距随着烷基紫精中烷基链的增长而增大, 但其结晶度随着烷基紫精阳离子中烷基链的增加而降低. XPS研究表明, 该类材料中的钒是以V^4＋和V^5＋两种混合价态存在, 氧原子处于三种不同的化学环境, 这些现象说明烷基紫精阳离子的引入对五氧化二钒的骨架结构影响不大, 主体五氧化二钒的层状结构保存完好; 氮原子处于两种不同的化学环境, 证实插层化合物中主客体之间相互修饰的协同效应, 有可能起到了稳定客体分子激发态的作用, 同时FT-IR光谱中芳香环特征谱带强度的变化也进一步证明了这一结论. UV-vis DRS分析发现由于主客体的相互作用使插层化合物在紫外和可见光区域产生特殊的光吸收性质. 从磁性研究的结果可以看出, 在温度低于15 K时, 插层化合物RV2为反铁磁性的有序结构; 当温度高于15 K时, 转变为顺磁性, 表现出磁无序结构.     

基片温度对LiCoO2薄膜结构与电化学性能的影响

采用射频(RF)磁控溅射技术制备了用于全固态薄膜锂电池的非晶态和多晶LiCoO2阴极薄膜,利用XRD和SEM研究了沉积温度对LiCoO2薄膜结构和形貌的影响,并研究了高温退火后薄膜的电化学性能.研究结果表明,随著基片温度的不同,薄膜成分、表面形貌以及电化学行为有明显差异.室温沉积的薄膜很难消除薄膜中Li2CO3的影响,经过高温退火处理后也无法形成有效的多晶LiCoO2薄膜,而150℃沉积的薄膜经过高温退火后形成了有利于锂离子嵌入的多晶LiCoO2结构,薄膜显示出了较好的电化学性能.     

Substrate temperature effects on the structural,compositional, and electrical properties of VO2 thin films deposited by pulsed laser deposition

The vanadium dioxide (VO₂) thin films were deposited on silicon (100) substrate using the pulsed laser deposition technique. The thin films were deposited at different substrate temperatures (500°C, 600°C, 700°C, and 800°C) while keeping all the other parameters constant. X‐ray diffraction confirmed the crystalline VO₂ (B) and VO₂ (M) phase formation at different substrate temperatures. X‐ray photoelectron spectroscopy analysis showed the presence of V⁴⁺ and V⁵⁺ charge states in all the deposited thin films which confirms that the deposited films mainly consist of VO₂ and V₂O₅. An increase in the VO₂/V₂O₅ ratio has been observed in the films deposited at higher substrate temperatures (700°C and 800°C). Scanning electron microscope micrographs revealed different surface morphologies of the thin films deposited at different substrate temperatures. The electrical properties showed the sharp semiconductor to metal transition behavior with approximately 2 orders of magnitude for the VO₂ thin film deposited at 800°C. The transition temperature for heating and cooling cycles as low as 46.2°C and 42°C, respectively, has been observed which is related to the smaller difference in the interplanar spacing between the as‐deposited thin film and the standard rutile VO₂ as well as to the lattice strain of approximately −1.2%.     

再生方法对V2O5/AC催化剂同时脱硫脱硝活性的影响

 考察了水洗再生、Ar热再生和5%NH3-95%Ar还原再生对V2O5/AC催化剂同时脱硫脱硝活性的影响. 结果表明,水洗再生虽然可洗去反应过程中沉积在催化剂表面的含硫物质,但也能将部分活性组分V2O5转化生成的VOSO4洗去,使催化剂的脱硫脱硝活性降低. Ar热再生后催化剂的脱硝活性与新鲜样品相同,但脱硫活性很低. 经5%NH3-95%Ar还原再生后,催化剂的脱硫活性可恢复到新制备时的水平,同时脱硝活性大大提高,这是由于催化剂表面除了原有的脱硝活性位V2O5外,又形成了新的活性位NH+4/NH-2. 还原再生过程产生的SO2与NH3在室温下反应生成固体亚硫酸铵盐,可实现硫的资源化,简化了后续处理工艺.     

Effects of La-doping on structural,electrical and multiferroic properties of Bi6Fe2Ti3O18 thin films

Journal of Sol-Gel Science and Technology - Bi6Fe2Ti3O18 (BFTO) and La-doped Bi6?xLaxFe2Ti3O18 (BLFT) (x = 0.03; BLFT3, x = 0.06; BLFT6 and 0.09; BLFT9)...     

V2O5/TiO2 Catalyst Xerogels: Method of Preparation and Characterization

This work describes a modified sol-gel method for the preparation of V₂O₅/TiO₂ catalysts. The samples have been characterized by N₂ adsorption at 77 K, X-ray Diffractometry (XRD), Scanning Electronic Microscopy (SEM/EDX) and Fourier Transform Infrared Spectroscopy (FT-IR). The surface area increases with the vanadia loading from 24 m² g^–1 for pure TiO₂ to 87 m² g^–1 for 9 wt% of V₂O₅. The rutile form is predominant for pure TiO₂ but becomes enriched with anatase phase when vanadia loading is increased. No crystalline V₂O₅ phase was observed in the diffractograms of the catalysts. Analysis by SEM showed heterogeneous granulation of particles with high vanadium dispersion. Two species of surface vanadium were observed by FT-IR spectroscopy: a monomeric vanadyl and polymeric vanadates. The vanadyl/vanadate ratio remains practically constant. Ethanol oxidation was used as a catalytic test in a temperature range from 350 to 560 K. The catalytic activity starts around 380 K. For the sample with 9 wt% of vanadia, the conversion of ethanol into acetaldehyde as the main product was approximately 90% at 473 K.     

V2O5/AC同时脱硫脱硝催化剂在氨气氛中再生时的碳烧蚀机理

采用程序升温脱附、X射线光电子能谱、元素分析和原位漫反射傅里叶变换红外光谱等方法研究了V2O5/AC同时脱硫脱硝催化-吸附剂在5%NH3-95%Ar气氛下再生时的碳烧蚀行为和机理.结果表明,NH3与V2O5/AC表面的含氧组分(羧基、羟基、酚羟基以及V2O5等)发生了作用,优先消耗了V2O5/AC表面上的氧,生成了H2O和多种表面含氮官能团((内)酰胺类和腈类等),从而抑制了再生时碳的烧蚀.     

Dispersion state and catalytic properties of vanadia species on the surface of V_2O_5/TiO_2 catalysts

The dispersion state and catalytic properties of anatase-supported vanadia species are studied by means of X-ray diffraction (XRD), laser Raman spectroscopy (LRS), H2 temperature-programmed reduction (TPR) and the selective oxidation of o-xylene to phthalic anhydride. The almost identical values of the experimental dispersion capacity of V2O5 on anatase and the surface vacant sites available on the preferentially exposed (001) plane of anatase suggest that the highly dispersed vanadium cations are bonded to the vacant sites on the surface of anatase as derived by the incorporation model. When the loading amount of V2O5 is far below its dispersion capacity, the dispersed vanadia species might mainly consist of isolated VOx species bridging to the surface through V-O-Ti bonds. With the increase of V2O5 loading the isolated vanadia species interact with their nearest neighbors (either isolated or polymerized vanadia) through bridging V-O-V at the expenses of V-O-Ti bonds, resulting in the increase of the ra     

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

Gold‐induced (Au‐) crystallization of amorphous germanium (α‐Ge) thin films was investigated by depositing Ge on aluminum‐doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X‐ray diffraction, and scanning electron microscopy. The Raman and X‐ray diffraction results indicated that the Au‐induced crystallization of the Ge films yielded crystallization at temperature as low as 300°C for 1 hour. The amount of crystallization fraction and the film quality were improved with increasing the postannealing temperatures. The scanning electron microscopy images show that Au clusters are found on the front surface of the Ge films after the films were annealed at 500°C for 1 hour. This suggests that Au atoms move toward the surface of Ge film during annealing. The effects of annealing temperatures on the electrical conductivity of Ge films were investigated through current‐voltage measurements. The room temperature conductivity was estimated as 0.54 and 0.73 Scm⁻¹ for annealed samples grown on aluminum‐doped zinc oxide and glass substrates, respectively. These findings could be very useful to realize inexpensive Ge‐based electronic and photovoltaic applications.     

Li doped and undoped ZnO nanocrystalline thin films: a comparative study of structural and optical properties

Thin films of ZnO were grown by the sol–gel method using spin-coating technique on (0001) sapphire substrates. The effect of doping after annealing on the structural and optical properties has been investigated by means of X-ray diffraction (XRD), cathodoluminescence (CL) spectrum, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The films that were dried at 623 K and then post annealed at 873 K showed (0002) as the predominant orientation. Two emission bands have been observed from CL spectrum. Lithium doped film shows shift in the near band edge UltraViolet emission peak and suppressed defect level emission peak in the visible range. SEM analysis of the films exhibits many spherical shaped nanoparticles. Roughness of the films determined using atomic force microscopy.      

ChemInform Abstract: Structural Study of the NaCdVO4—Cd3V2O8 and CdO—V2O5 Sections of the Ternary System Na2O—CdO—V2O5.

ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.     

Effects of negative bias on the structural,topological and tribological properties of amorphous carbon films prepared by magnetron sputtering

Amorphous carbon films were prepared in a magnetron sputtering system at different d.c. negative substrate biases (?50, ? 100, ? 150, ? 200 and ? 250 V). The surface roughness, hardness and tribological properties of as‐deposited films were investigated based on the films' structural evolution. Compared with the films deposited at the negative bias of ? 50 and ? 250 V, the microstructure and bond configuration of the films deposited at negative bias of ? 150 V favored a more graphite‐like structure, which had the maximum of graphiticclusters and ordering structures; meanwhile, the films deposited at bias of ? 150 V showed the minimum coefficient of friction (COF) in air, while the wear rate showed a decrease of two orders of magnitude. The tribotesting results were attributed to the increase of graphitic domains of amorphous carbon films which decreased the interfacial shear force and lowered the COF. The uniform and ordering structure induced steady and smooth friction curves. Copyright © 2010 John Wiley & Sons, Ltd.     

Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors

Titanium dioxide (TiO₂) thin films were deposited onto p‐Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80–200 W. The as‐deposited TiO₂ films were annealed at a temperature of 1023 K. The post‐annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO₂/p‐Si structure were determined from the capacitance–voltage and current–voltage characteristics. X‐ray diffraction studies confirmed that the as‐deposited films were amorphous in nature. After post‐annealing at 1023 K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers > 160 W showed the mixed anatase and rutile phases of TiO₂. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air‐annealed Al/TiO₂/p‐Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO₂/p‐Si (metal‐insulator‐semiconductor) was systematically investigated. Copyright © 2014 John Wiley & Sons, Ltd.