共查询到20条相似文献,搜索用时 312 毫秒
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通过考虑体散射、界面电荷的库仑散射以及 Al2O3/InxGa1-xAs 界面粗糙散射等主要散射机理, 建立了以 Al2O3为栅介质InxGa1-xAs n 沟金属-氧化物-半导体场效应晶体管 (nMOSFETs) 反型沟道电子迁移率模型, 模拟结果与实验数据有好的符合. 利用该模型分析表明, 在低至中等有效电场下, 电子迁移率主要受界面电荷库仑散射的影响; 而在强场下, 电子迁移率则取决于界面粗糙度散射. 降低界面态密度, 减小 Al2O3/InxGa1-xAs 界面粗糙度, 适当提高In含量并控制沟道掺杂在合适值是提高 InGaAs nMOSFETs 反型沟道电子迁移率的主要途径.
关键词:
InGaAs
MOSFET
反型沟道电子迁移率
散射机理 相似文献
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对n/p两种沟道类型、不同沟道尺寸MOSFET的1/f噪声特性进行了实验和理论研究.实验结 果表明,虽然nMOSFET的1/f噪声幅值比pMOSFET大一个数量级,但是其噪声幅值均表现出和 有效栅压的平方成反比、和漏压的平方成正比、和沟道面积成反比的规律.基于该实验结果 ,认为MOSFET的1/f噪声产生机理为位于半导体_氧化物界面附近几个纳米范围内的氧化层陷 阱通过俘获和发射过程与沟道交换载流子,在引起载流子数涨落的同时也通过库仑散射导致 沟道载流子迁移率的涨落.在这两种涨落机理的基础上,引入了氧化层陷阱的分布特征及其 与沟道交换载流子的隧穿和热激活两种方式,建立了MOSFET l/f噪声的统一模型.实验结果 和本文模型符合良好.
关键词:
1/f噪声
MOSFET
氧化层陷阱
涨落 相似文献
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随着场效应晶体管(MOSFET)器件尺寸的进一步缩小和器件新结构的引入, 学术界和工业界对器件中热载流子注入(hot carrier injections, HCI)所引起的可靠性问题日益关注. 本文研究了超短沟道长度(L=30–150 nm)绝缘层上硅(silicon on insulator, SOI)场效应晶体管在HCI应力下的电学性能退化机理. 研究结果表明, 在超短沟道情况下, HCI 应力导致的退化随着沟道长度变小而减轻. 通过研究不同栅长器件的恢复特性可以看出, 该现象是由于随着沟道长度的减小, HCI应力下偏压温度不稳定性效应所占比例变大而导致的. 此外, 本文关于SOI器件中HCI应力导致的退化和器件栅长关系的结果与最近报道的鳍式场效晶体管(FinFET)中的结果相反. 因此, 在超短沟道情况下, SOI平面MOSFET器件有可能具有比FinFET器件更好的HCI可靠性. 相似文献
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本文基于多晶SiGe栅量子阱SiGe pMOSFET器件物理,考虑沟道反型时自由载流子对器件纵向电势的影响,通过求解泊松方程,建立了p+多晶SiGe栅量子阱沟道pMOS阈值电压和表面寄生沟道开启电压模型.应用MATLAB对该器件模型进行了数值分析,讨论了多晶Si1-yGey栅Ge组分、Si1-xGex量子阱沟道Ge组分、栅氧化层厚度、Si帽层厚度、沟道区掺杂浓度和
关键词:
多晶SiGe栅
寄生沟道
量子阱沟道
阈值电压 相似文献
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高迁移率Ge沟道器件由于其较高而且更对称的载流子迁移率, 成为未来互补型金属-氧化物-半导体(CMOS) 器件极有潜力的候选材料. 然而, 对于Ge基MOS器件, 其栅、源漏方面面临的挑战严重影响了Ge基MOS 器件性能的提升, 尤其是Ge NMOS器件. 本文重点分析了Ge基器件在栅、源漏方面面临的问题, 综述了国内外研究者们提出的不同解决方案, 在此基础上提出了新的技术方案. 研究结果为Ge基MOS 器件性能的进一步提升奠定了基础. 相似文献
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Stanislav Jure?ka Hikaru Kobayashi Woo-Byoung Kim Masao Takahashi Emil Pin?ík 《Central European Journal of Physics》2012,10(1):210-217
The quality of the interface region in a semiconductor device and the density of interface states (DOS) play important roles
and become critical for the quality of the whole device containing ultrathin oxide films. In the present study the metal-oxide-semiconductor
(MOS) structures with ultrathin SiO2 layer were prepared on Si(100) substrates by using a low temperature nitric acid oxidation of silicon (NAOS) method. Carrier
confinement in the structure produces the space quantization effect important for localization of carriers in the structure
and determination of the capacitance. We determined the DOS by using the theoretical capacitance of the MOS structure computed
by the quantum mechanical approach. The development of the density of SiO2/Si interface states was analyzed by theoretical modeling of the C-V curves, based on the superposition of theoretical capacitance
without interface states and additional capacitance corresponding to the charges trapped by the interface states. The development
of the DOS distribution with the passivation procedures can be determined by this method. 相似文献
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用深能级瞬态谱(DLTS)技术系统研究了Si/SiO2界面附近的深能级和界面态。结果表明,在热氧化形成的Si/SiO2界面及其附近经常存在一个浓度很高的深能级,它具有若干有趣的特殊性质,例如它的DLTS峰高度强烈地依赖于温度,以及当栅偏压使费密能级与界面处硅价带顶的距离明显小于深能级与价带顶的距离时,仍然可以观测到一个很强的DLTS峰。另外,用最新方法测量的Si/SiO2界面连续态的空穴俘获截面与温度有关,而与能量位置无明显关系,DLTS测
关键词: 相似文献
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K. Pater 《Applied Physics A: Materials Science & Processing》1987,44(2):191-194
A method for the dc surface photovoltage measurement in MOS capacitors is proposed. Results of surface-photovoltage measurements performed for two kinds of MOS structures on p-type silicon substrates are presented. Comparison of them with results obtained form C-V characteristics exhibits a satisfactory conformity. Two groups of surface states beginning at E
t
1
= Ev + 0.25 eV and E
t
2
= Ec – 0.30 eV in the oxide-silicon interface of the investigated structures had been found. 相似文献
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The effect of gamma irradiation on MOS devices prepared under different oxidation conditions Is investigated. The C-V characteristics of the devices are studied before and after exposing the latter with gamma radiations of CO60 (1.17 and 1.33 MeV gamma rays). For MOS transistor (n-channel depletion type devices) the C-V characteristics change slightly towards the negative voltage axis and the Cmin also decreases after Irradiation. For MOS capacitor (wet oxide) there is a change from high frequency C-V characteristics to low frequency C-V characteristics. In the case of a MOS capacitor (HCl grown) breakdown occurs relatively at lower voltage. 相似文献
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Depth dependent carrier density and trapped charges in a metal-oxide-semiconductor field effect transistor (MOSFET) like structure have been studied using scanning capacitance microscopy (SCM). For a MOSFET structure, since minority carrier can be provided by the source and drain diffusions, its response time is shorter than that of metal-oxide-semiconductor (MOS) system. So the high frequency C-V relation is slightly different from that of MOS capacitor and shows the characteristics dependent on the channel length. Bias dependent SCM images which represent the depth dependent carrier density and detrapping time constant of trapped charges in the oxide layer were observed to see the channel effect in a MOSFET structure. 相似文献
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The interfacial characteristics of Al/Al2O3/ZnO/n-GaAs metal-oxide-semiconductor (MOS) capacitor are investigated. The results measured by X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) show that the presence of ZnO can effectively suppress the formations of oxides at the interface between the GaAs and gate dielectric and gain smooth interface. The ZnO-passivated GaAs MOS capacitor exhibits a very small hysteresis and frequency dispersion. Using the Terman method, the interface trap density is extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality. 相似文献
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In this work we have compared the SiO2/SiC interface electrical characteristics for three different oxidations processes (dry oxygen, water-containing oxygen and water-containing nitrogen atmospheres). MOS structures were fabricated on 8° off-axis 4H-SiC(0 0 0 1) n- and p-type epi-wafers. Electrical characteristics were obtained by I-V measurements, high-frequency capacitance-voltage (C-V) and ac conductance (G-ω) methods. Comparing the results, one observes remarkable differences between samples which underwent different oxidation routes. Among the MOS structures analyzed, the sample which underwent wet oxidation with oxygen as carrier gas presented the higher dielectric strength and lower values of interface states density. 相似文献
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Wet thermal annealing effect on TaN/HfO2/Ge metal-oxide-semiconductor capacitors with and without a GeO2 passivation layer
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Wet thermal annealing effects on the properties of TaN/HfO2/Ge metal-oxide-semiconductor(MOS) structures with and without a GeO2 passivation layer are investigated.The physical and the electrical properties are characterized by X-ray photoemission spectroscopy,high-resolution transmission electron microscopy,capacitance-voltage(C-V) and current-voltage characteristics.It is demonstrated that wet thermal annealing at relatively higher temperature such as 550℃ can lead to Ge incorporation in HfO2 and the partial crystallization of HfO2,which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO2/Ge MOS capacitors.However,wet thermal annealing at 400℃ can decrease the GeO x interlayer thickness at the HfO2/Ge interface,resulting in a significant reduction of the interface states and a smaller effective oxide thickness,along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeO x in the wet ambient.The pre-growth of a thin GeO2 passivation layer can effectively suppress the interface states and improve the C-V characteristics for the as-prepared HfO2 gated Ge MOS capacitors,but it also dissembles the benefits of wet thermal annealing to a certain extent. 相似文献