电子束蒸发氧化锆薄膜的粗糙度和光散射特性

利用电子束蒸发工艺，以Ag层为衬底，沉积了中心波长为632.8nm的氧化锆(ZrO₂)薄膜，膜层厚度在80—480nm范围内变化.研究了不同厚度样品的粗糙度变化规律和表面散射特性.结果发现，随着膜层厚度的逐渐增加，其表面均方根(RMS)粗糙度和总积分散射(TIS)均呈现出先减小后增大的趋势.利用非相关表面粗糙度的散射模型对样品的TIS特性进行了理论计算，所得结果与测量结果相一致. 关键词： 氧化锆 表面粗糙度 标量散射 电子束蒸发     

二氧化锆薄膜表面粗糙度的研究

采用电子束蒸发工艺,利用泰勒霍普森相关相干表面轮廓粗糙度仪,研究了不同基底粗糙度、不同二氧化锆薄膜厚度以及不同的离子束辅助能量下所沉积的二氧化锆薄膜的表面粗糙度。结果表明：随着基底表面粗糙度的增加,二氧化锆薄膜表面粗糙度呈现出先缓慢增加,当基底的粗糙度大于10nm后呈现快速增加的趋势;随着二氧化锆薄膜厚度的增加,其表面均方根粗糙度（RMS）先减小后增大;随着辅助沉积离子能量的增加,其表面粗糙度呈现出先减小后增加的趋势。     

表面粗糙度对薄膜面向热导率的影响研究

通过求解声子辐射输运方程(EPRT)计算得到了薄膜的面向晶格热导率.在薄膜界面采用与声子波长相关的镜反射率模型,考虑了薄膜的厚度、温度和表面粗糙度等对其热导率的影响.结果表明,界面粗糙度对薄膜热导率的影响很大.减小界面粗糙度,会使得薄膜热导率大大增加.另外,薄膜厚度减小使得热导率峰值对应的温度增加.     

光学薄膜表面复型电子显微照片的计算机处理

用计算机处理薄膜表面复型电子显微照片,得到表面高度轮廓,提出了计算机定标方法,并计算了薄膜表面微结构参量.     

聚酰亚胺薄膜表面粗糙度的影响因素

 采用热蒸发气相沉积聚合方法（VDP）制备了聚酰亚胺(PI)薄膜,研究了设备、衬底温度、升温过程和单体配比因素对PI薄膜表面形貌的影响。利用干涉显微镜和扫描电镜对薄膜表面形貌进行了分析;利用原子力显微镜测定了薄膜表面粗糙度。结果表明：设定蒸发源-衬底距离为74 cm时可成连续膜;蒸发源采用一段升温和多段升温时,膜表面均方根粗糙度分别为291.23 nm和61.99 nm;采用细筛网可防止原料的喷溅;均苯四甲酸二酐和4,4′-二氨基二苯醚（PMDA和ODA）单体沉积速率比值为0.9∶1时,膜表面均方根粗糙度值可减小至3.30 nm;沉积衬底温度保持30 ℃左右时,膜表面均方根粗糙度为4.01 nm, 随温度的上升,膜表面质量会逐渐变差。     

聚酰亚胺薄膜表面粗糙度的影响因素

采用热蒸发气相沉积聚合方法（VDP）制备了聚酰亚胺(PI)薄膜,研究了设备、衬底温度、升温过程和单体配比因素对PI薄膜表面形貌的影响。利用干涉显微镜和扫描电镜对薄膜表面形貌进行了分析;利用原子力显微镜测定了薄膜表面粗糙度。结果表明：设定蒸发源-衬底距离为74 cm时可成连续膜;蒸发源采用一段升温和多段升温时,膜表面均方根粗糙度分别为291.23 nm和61.99 nm;采用细筛网可防止原料的喷溅;均苯四甲酸二酐和4,4′-二氨基二苯醚（PMDA和ODA）单体沉积速率比值为0.9∶1时,膜表面均方根粗糙度值可减小至3.30 nm;沉积衬底温度保持30 ℃左右时,膜表面均方根粗糙度为4.01 nm, 随温度的上升,膜表面质量会逐渐变差。     

表面粗糙度光纤传感器研究

基于光在粗糙表面的散射原理,利用时间延迟技术,设计了一种快速、非接触测量表面粗糙度的光纤传感器。与同类传感器相比,成本低,系统误差小。     

热处理对CH薄膜表面粗糙度及力学性能的影响

利用低压等离子体化学气相沉积法制备厚度约为7 m的辉光放电聚合物薄膜,将制备的薄膜样品放入通有氩气保护的热处理炉中加热至300 ℃,分别进行6,10,24 h的保温热处理。通过白光干涉仪观察分析了不同保温时间下辉光放电聚合物薄膜的表面粗糙度; 利用傅里叶变换红外吸收光谱分析了300 ℃条件下不同保温时间对薄膜结构的影响; 采用纳米压痕仪表征了不同保温时间热处理后,薄膜硬度及模量的变化。结果表明:随着保温时间的增加,薄膜的表面均方根粗糙度由12 nm降至4.43 nm。薄膜结构中甲基的相对含量减少,双键的相对含量增加,碳链变长,同时薄膜网络结构的交联化程度增强。硬度和模量随着保温时间的增加先减小后增大。     

直流磁控溅射制备AlN薄膜的结构和表面粗糙度

采用直流磁控反应溅射法,在Si(111)基底上成功制备了多晶六方相AlN薄膜.研究了溅射过程中溅射气压对薄膜结构和表面粗糙度的影响.结果表明:当溅射气压低于0.6 Pa时,薄膜为非晶态,在傅里叶变换红外光谱中,没有明显的吸收峰;当溅射气压不低于0.6 Pa时,薄膜的X射线衍射图中均出现了六方相的AlN(100)、(11...     

直流磁控溅射制备AlN薄膜的结构和表面粗糙度

采用直流磁控反应溅射法,在Si(111)基底上成功制备了多晶六方相AlN薄膜.研究了溅射过程中溅射气压对薄膜结构和表面粗糙度的影响.结果表明:当溅射气压低于0.6 Pa时,薄膜为非晶态,在傅里叶变换红外光谱中,没有明显的吸收峰;当溅射气压不低于0.6 Pa时,薄膜的X射线衍射图中均出现了六方相的AlN(100)、(110)和弱的(002)衍射峰,说明所制备的AlN薄膜为多晶态,在傅里叶变换红外光谱中,在波数为677 cm-1处有明显的吸收峰;随着溅射气压的增大,薄膜表面粗糙度先减小后增大,而薄膜的沉积速率先增大后减少,且沉积速率较大有利于减小薄膜的表面粗糙度;在溅射气压为0.6 Pa时,薄膜具有最小的表面粗糙度和最大的沉积速率.     

非晶氧化钛薄膜形成过程中钛离子能量对表面结构影响的机理

研究了非晶氧化钛薄膜沉积过程中入射钛离子能量对表面结构形成机理以及薄膜特性的影响.模拟结果表明,通过提高入射钛离子能量,可以有效降低成膜表面粗糙度,从而减小薄膜表面的光学散射损耗.研究发现,当入射离子能量提高后,薄膜生长模式从"岛"状生长过渡到了"层"状生长,且离子入射点附近的平均扩散系数也有显著增加,这有利于形成更加平整的高质量薄膜表面.     

Annealing effect on ion-beam-sputtered titanium dioxide film

We found that the extinction coefficient of ion-beam-sputtered titanium dioxide films first decreased with increasing annealing temperature then increased drastically when annealing temperature was increased above ~200 degrees C for 24 h of annealing time. The decreasing extinction coefficient with annealing temperature was attributed to a reduction in absorption owing to oxidation of the film by annealing. The film structure remained amorphous to 200 degrees C annealing temperature. The drastic increase of extinction coefficients above ~200 degrees C was associated with the appearance of an anatase polycrystalline structure and was attributed to scattering by the polycrystalline structure. With shorter annealing time the transition temperature from amorphous to polycrystalline anatase was higher. Guidance for reducing the optical loss of laser mirrors is proposed.     

Effect of surface roughness on multilayer film growth

NbC/Si multilayers grown on silicon substrates of different roughness have been used to study the influence of surface quality on growth characteristics. Surface morphology of substrate and multilayer film are characterized by topographic measurements using atomic force microscopy (AFM) technique and power spectral density analysis (PSD). Grazing incidence x-ray reflectivity (GIXR) technique in combination with PSD analysis reveals a growth characteristic of multilayer film on substrates of different roughness. It is revealed that the stochastic growth of NbC on rough substrate leads to formation of clusters of varying size depending on initial substrate roughness. Details of growth characteristic are discussed.     

Non-monotonous dependence of surface roughness on factors influencing energy of adatoms during thin island film growth

Many experimental results show that surface roughness of thin films can increase, decrease, stay constant or pass through the minimum with the change in substrate temperature, energy of arriving atoms or assisted beam (electrons, photons, ions), depending on material and interval of variation of those parameters. The aim of this paper is to explain and analyze this non-monotonous behavior of surface roughness by proposed kinetic model. The model is based on rate equations and includes processes of surface diffusion of adatoms, nucleation, growth and coalescence of islands in the case of thin films growth in Volmer-Weber mode. It is shown by modeling that non-monotonous dependence of surface roughness on the factors influencing energy of adatoms (e.g. temperature, assisted beam irradiation, accelerating voltage) occurs as a result of interplay between diffusion length of adatoms and size of islands, because both parameters depend on energy of adatoms. Variation of island size and diffusion length results in atomic jumps from islands forming rougher or smoother surface. The functions of surface roughness, island size, island density on diffusion length of adatoms and on other parameters are calculated and analyzed in this work.     

Effect of titanium powder assisted surface pretreatment process on the nucleation enhancement and surface roughness of ultrananocrystalline diamond thin films

A superior, easy and single-step titanium (Ti) powder assisted surface pretreatment process is demonstrated to enhance the diamond nucleation density of ultrananocrystalline diamond (UNCD) films. It is suggested that the Ti fragments attach to silicon (Si) surface form bond with carbon at a faster rate and therefore facilitates the diamond nucleation. The formation of smaller diamond clusters with higher nucleation density on Ti mixed nanodiamond powder pretreated Si substrate is found to be the main reason for smooth UNCD film surface in comparison to the conventional surface pretreatment by only nanodiamond powder ultrasonic process. The X-ray photoelectron spectroscopic study ascertains the absence of SiC on the Si surface, which suggests that the pits, defects and Ti fragments on the Si surface are the nucleation centers to diamond crystal formation. The glancing-incidence X-ray diffraction measurements from 100 nm thick UNCD films evidently show reflections from diamond crystal planes, suggesting it to be an alternative powerful technique to identify diamond phase of UNCD thin films in the absence of ultra-violet Raman spectroscopy, near-edge X-ray absorption fine structure and transmission electron microscopy techniques.     

Cerium dioxide thin film optical waveguides

Cerium dioxide thin film optical waveguides were fabricated by an RF magnetron sputtering process. The films were deposited on glass substrates and on silicon dioxide layers grown on silicon substrates. Optical loss measurements for the fabricated waveguides are reported. It is seen that the volume losses in the films were fairly high compared with the surface losses.     

Influence of surface roughness on surface plasmon resonance phenomenon of gold film

We experimentally investigate the effects of the surface roughness of gold thin films on the properties of surface plasmon resonance. By annealing at different temperatures, film samples with different surface morphologies are obtained. Specifically, due to the diffusion of the gold atoms towards the films3 surface, the surface rootmean-square roughness decreases with the increasing annealing temperature. Then, we measure the surface plasmon resonance of the samples. The results show that the resonance angle of the surface plasmon resonance is sensitive to the root-mean-square roughness, and it gradually decreases by reducing the surface root-mean-square roughness.Yang