基于石墨烯的宽带可饱和吸收体的制备及其在激光器中的应用

将石墨烯作为宽带可饱和吸收体分别应用在1.06μm Nd∶YAG固体激光器、2μm Tm∶YAP固体激光器以及1.55μm掺铒全光纤激光中.石墨烯采用化学汽相沉积法制备,以乙炔作为碳源,25μm厚的铜箔作为生长基体和催化剂,H2为载气,Ar为辅助气体,在常压、1 000℃高温条件下进行生长.1.06μm Nd∶YAG固体激光器实验中,采用直线型侧面泵浦腔型结构,当输出功率为10W时,得到了重复频率为360kHz,脉冲宽度240ns的最短脉冲输出,其单脉冲能量为27μJ,峰值功率为115.7W;2μm Tm∶YAP固体激光器实验中,使用中心波长在795nm附近的半导体激光器作为泵浦源,采用10%透过率的输出镜获得了脉宽为1.4μs的最窄调Q脉冲;环形腔1.55μm掺铒全光纤激光器实验中,利用1.25m长的高掺铒光纤作为增益光纤,当泵浦功率为100mW时,输出功率为10mW,获得了脉冲宽度314ps的稳定被动连续锁模脉冲,脉冲重复频率为20MHz并验证了同次制备的石墨烯的宽带可饱和吸收特性.     

基于纯水可饱和吸收体的1.9μm波段被动调Q和锁模掺铥光纤激光器

构建了纯水作为可饱和吸收体的被动调Q和锁模掺铥光纤激光器.通过陶瓷套管将纯水固定在两个光纤跳线头之间,调整水层厚度可以分别实现调Q和锁模操作.调Q状态下的最大输出功率为0.531 mW,此时的重复频率为53.45 kHz,脉冲宽度为3.01μs.锁模状态下的最大输出功率为2.28 mW,重复频率为17.69 MHz,脉冲宽度为1.42 ps.本文使用纯水作为可饱和吸收体的被动锁模光纤激光器,其具有皮秒级的响应时间、低廉的价格和极高的损伤阈值,可为掺铥全光纤脉冲激光器提供一种新方案.     

基于超薄层MoS_(2)可饱和吸收体的被动调Q固体Nd∶YAG激光器EI北大核心CSCD

利用超声剥离法制备了超薄层MoS_(2)纳米片分散液可饱和吸收体,以石英池为容器插入Nd∶YAG激光器的平凹谐振腔中,调节谐振腔镜的位置并增大泵浦功率,成功实现了Nd∶YAG激光器被动调Q脉冲输出。实验结果显示,泵浦功率为2.46 W时,激光器开始调Q运转。泵浦功率为14.55 W时,实现了485 mW的脉冲激光输出功率,重复频率为189.75 kHz,脉冲宽度为1.2μs,对应的最大脉冲能量为2.56μJ。结果表明,超薄层MoS_(2)分散液是适用于1064 nm波长固体激光器被动调Q运转的可饱和吸收体材料。     

Cr^4＋：YAG的可饱和吸收特性与被动Q开关性能研究

运用速率方程计算了Ｃｒ＾４＋：ＹＡＧ晶体的可饱和吸收特性参数，包括初始吸收系数，饱和吸收系数，饱和光强和损耗调制度，用Ｃｒ＾４＋：ＹＡＧ对脉冲和连续Ｎｄ：ＹＡＧ激光器进行了被动调Ｑ，在脉冲Ｎｄ：ＹＡＧ激光器上得到了８ｎｓ的调Ｑ激光脉冲，在连续Ｎｄ：ＹＡＧ激光器的调Ｑ中得到了间隔和幅度抖动小于５％的输出脉冲充列。     

基于多层石墨烯可饱和吸收体的被动调Q Ho∶YAG激光器

报道了2μm被动调Q的Ho∶YAG激光器,该激光器采用Tm~(3+)光纤激光器作为泵浦源,使用多层石墨烯作为可饱和吸收体。在连续波激光输出模式下,当泵浦功率为4.2 W时,获得了750 mW激光输出,输出激光中心波长为2.09μm,斜率效率为29.6%。在连续波激光器谐振腔中插入多层石墨烯可饱和吸收体并调整谐振腔,获得了脉冲激光输出。当泵浦功率为4.2 W时,获得最小脉冲宽度3.1μs、重复频率66.6 kHz的脉冲激光输出,其最大平均输出功率为170 mW,斜率效率为12.6%,光束质量因子M_x~2=1.15,M_y~2=1.12。     

可饱和吸收体Cr:YAG做被动调Q元件时的选模作用

研究了可饱和吸收体Cr:YAG做被动调Q元件时所表现出的选模作用.理论分析和实验表明:Cr:YAG晶体的“动态光阑”效果确保了激光器的基横模输出;而不同纵模形成振荡的难易差别也为脉冲单纵模的实现提供了条件.Cr:YAG晶体的选模作用在实践中应得到充分的利用.     

激光二极管抽运的GaAs被动Q开关Nd：YVO4激光器

利用固体可饱和吸收体砷化镓（GaAs）作为被动调Q元件，实现了激光二极管抽运平－凹腔掺钕钒酸钇（Nd:YVO4）激光调Q运转，详细测量了砷化镓被动调QNd:YVO4激光输出特性，获得脉宽15ns，重复频率470kHz，光束质量M^2=1.31的激光输出，调Q激光运转阈值为500mW，并数值求解了砷化镓被动调Q速率方程，讨论了被动调Q机理以及调Q脉冲宽度和脉冲重复频率对抽运速率的依赖关系，理论计算结果与实验结果相一致。     

Passive mode locking of a Nd：YAG laser with co－doped Nd, Cr：YAG as saturable absorber

We demonstrate the characteristics of relatively low saturation intensity using co-doped Nd, Cr:YAG as saturable absorber for passively mode locking the Nd:YAG laser. The difference of the saturation intensity between Q-switched and mode-locked operation in co-doped Nd, Cr:YAG was only one to two orders of magnitude, while Cr:YAG was generally reported at a difference of five orders of magnitude. More than 80% mode locking modulation depth was achieved at an incident pump power of 4.4W, corresponding to an intracavity intensity of 6×10^4W/cm^2, using a 68cm long plano-concave cavity.     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

N2F4 as saturable absorber of CO2 laser radiation

Tetrafluorohydrazine induces passive Q switching in a continuous-wave CO₂ laser in both the P and R branches of the 10.4 μ system, showing comparable effectiveness on all the accessible lines. At higher pressures, this gas forces the laser to oscillate in the 9.3 μ system in non frequency-selective cavities.     

1.12-W Q-switched Yb:KGW laser based on transmission-type Bi2Se3 saturable absorber

We present a passively Q-switched Yb:KGW laser based on a transmission-type saturable absorber of topological insulator:Bi_2Se_3.The saturable absorber is prepared on a 0.17-mm glass substrate and can translate intra-cavity for best performance nearly without influence on the laser mode.At a maximum pump power of 13.7 W,the central wavelength,pulse duration,repetition rate,and pulse energy of Q-switched pulse are 1043 nm,1.5 μs,175.4 kHz,6.39 μJ,respectively.The maximum output power is 1.12 W.To our knowledge,this is the highest average output power from passively Qswitched lasers with topological insulator saturable absorbers.     

Pulse compression in continuously pumped dye lasers with a slow saturable absorber

Conditions for pulse compression and stability in a system of spatially separated amplifier and absorber contained in a ring or a common two-mirror cavity are investigated theoretically. The width of the pulse that travels in the cavity is assumed to be short compared to the longitudinal but long to the transversal relaxation times of the amplifier and the absorber (rate-equation theory). Especially the smallest ratios of the cross sections of the absorption and the stimulated emission needed for pulse shortening are calculated by analytical and numerical treatment.     

Nanosecond and femtosecond lasers based on black arsenic-phosphorus alloys saturable absorber

In this paper, the high-repetition-rate passively Q-switched(PQS) and the femtosecond continuous-wave mode-locked(CWML) lasers are successfully obtained with 2 D black arsenic-phosphorus(b-As P) nanosheets as saturable absorber(SA) at 1 μm for the first time, to the best of our knowledge. The saturable absorption properties and ultrafast carrier dynamics of the 2 D b-As P SA are explored by Z-scan and pump-probe techniques. Moreover, according to the measurement of desired nonlinear optical char...     

Mathematical modeling of TE CO2 laser with SF6 as a saturable absorber

A mathematical model describing the dynamic emission of a single mode TE CO₂ laser with saturable absorber has been adapted. A six-temperature model has been used to describe the amplifying medium, while a four-coupled energy level is used to describe the selective absorbing medium. The suggested mathematical model allows the investigation of the effects of the intracavity absorber on the mode characteristics of the TE CO₂ laser and, moreover, the study of the effect of the laser input parameters on the output laser pulse. The model simulates the passive Q-switch in both low- and high-pressure cases in the absorbing medium.

In addition, numerical solutions of a non-linear rate equation system of the suggested model are quantitatively discussed. The solutions describe the photon number density, the population inversion and the energy transfer processes of amplifying and absorbing media.     

Optimization of GaAs semiconductor saturable absorber Q-switched lasers

The expressions of pulse characteristics such as output energy, peak power, and pulse width are obtained by solving the coupled rate equations describing the operation of GaAs semiconductor saturable absorber Q-switched lasers. The key parameters of an optimally coupled GaAs saturable absorber Q-switched laser are determined and several design curves are generated from these expressions for the first time. These key parameters include the optimal normalized coupling parameters and the optimal normalized saturable absorber parameters that maximize the output energy or maximize the peak power, and the corresponding normalized energy, normalized peak power, and normalized pulse width. Using the expressions and design curves, one can predict the pulse characteristics and perform the design of an optimally coupled GaAs saturable absorber Q-switched laser.     

Raman scattering of the MoS2 and WS2 single nanotubes

We report here the results of the first resonance Raman study on single MoS₂ and WS₂ nanotubes and microtubes synthesized by chemical transport reaction. These multiwall tubes represent the longest known inorganic nanotubes grown up to several millimetre lengths with diameters ranging from less than ten nanometers to several micrometers. The nanotubes grown at nearly equilibrium conditions contain extremely low density of structural defects. The selected area diffraction on the thick-wall nanotubes revealing the rhombohedral (3R) stacking, otherwise stable at elevated pressure above 4 GPa, provides indirect evidence of the presence of strain incorporated into the nanotube wall. Results are compared with phonon spectra of plate-like crystals of the same compound. The observed up-shift of Raman peaks in the tubes spectra is explained by the presence of strain. Well preserved crystal structure of tubes is confirmed by comparison with phonon spectra of nanostructured materials from literature.     

Microstructure and tribological properties of WS2/MoS2 multilayer films

In this paper, a novel method, namely, magnetron sputtering and low temperature ion sulfurizing combined technique was used to fabricate the solid lubrication WS₂/MoS₂ multilayer films. Scanning Electron Microscopy (SEM) was used to observe the surface and worn scar morphologies. X-ray diffraction (XRD) was utilized to analyze the phase structure. The nano-hardness and elastic modulus of WS₂/MoS₂ multilayer films were surveyed by the nano-indentation tester. The friction and wear test were conducted on a ball-on-disk wear tester under dry sliding condition. The results obtained showed that the WS₂/MoS₂ multilayer films exhibited a lower friction coefficient and better wear-resistance when compared with single WS₂ film and original 1045 steel.     

Pulse broadening in injection mode locked TEA CO2 lasers

The broadening mechanism on the output pulses of an injection mode locked TEA CO₂ laser has been studied by varying the width of the injected gaussian pulses.     

Passively mode-locked Tm,Ho:YVO4 laser based on a semiconductor saturable absorber mirror

We report the demonstration of passively continuous-wave mode-locking(CWML) of diode-pumped Tm,Ho:YV04 laser using an InGaAs/GaAs multiple quantum-well(MQW) structure semiconductor as the saturable absorber.Stable mode-locking pulses at the central wavelength of 2 041 nm are obtained. The maximum output power is 151 mW.The pulse duration is 10.5 ps at the repetition rate of 64.3 MHz.