Reflectance of broad band waveguide bolometers

We have calculated and measured the reflectance of a variety of absorbers for cryogenic waveguide bolometers. The best absorber has <–15 db reflectance across a band of width 25% of the K band (18–26 GHz) center frequency and <–6 db reflectance across the entire K band.     

Phase Locking of 2-mm Wave Sources Upon High-Order IMPATT Multipliers

We describe experiments resulting in the phase locking of two electrically tunable 2-mm wave sources based on active high-order IMPATT multipliers. Phase locking modes were tested on a pair of identical multiplying sources (master and slave) with the tuning ranges 138.5+/–1.5 GHz (master) and 140.0+/– GHz (slave). The phase lock loop (PLL) system is used to lock the slave source to the master source. The multipliers of this type can translate the spectra of highly stable centimeter-wave oscillators to any part of the millimeter range with the output power 100÷20 mW over the 30 to 140 GHz range without additional amplification. The phase locked sources operate over a 3% frequency band with low phase noise and rapid frequency tuning. The amplitude-frequency characteristics of the sources are presented with the locking-mode signal spectra.     

Experimental investigation of millimeter wave Gunn oscillator circuits in circular waveguides

Millimeter wave Gunn oscillator circuits using circular waveguides for 33–50 GHz and 75–110 GHz frequency bands are described. These oscillators are simpler to construct at millimeter wavelengths compared to the conventional rectangular waveguide circuits. The effect of various circuit parameters on the oscillator frequency and output power has been experimentally studied. The CW power and mechanical tuning range obtained from the circular waveguide Gunn oscillators are found to be comparable and sometimes even better than those obtained with conventional rectangular waveguide circuits using the same Gunn device.     

一种基于单负Metamaterials成对结构的带通滤波器的设计

提出了一种基于单负Metamaterials对的带通滤波器的设计原理,给出了这种带通滤波器的谐振频率的表达式,对其谐振频率及带宽与其决定因素之间的关系进行了计算,对计算结果进行了讨论,为设计单负Metamaterial对带通滤波器的理论与方法提供了依据。研究结果表明：利用单负Metamaterials对的确可以实现带通滤波器;ENG板的磁导率μ1、MNG板的介电常数ε2、电等离子体频率ωep、磁等离子体频率ωmp、两个层的厚度比值a这五个因素决定了这种滤波器的中心频率;两个层的厚度及二者之间的比值决定这种滤波器的带宽。     

Compact Tunable Radiation Source at 180–1500 GHz Frequency Range

This paper is concerned with development of compact continuously tunable over all the submillimeterwave band (180 – 1500GHz) general purpose radiation source. The source consists of Backward Wave Oscillator (BWO) of the range 180 – 260 GHz or 250 – 375 GHz fixed in a small permanent magnet, followed by specially developed broadband frequency multiplier producing second, third, fourth, fifth and sixth harmonics of BWO fundamental frequency. The conversion losses for all the harmonics are measured. The estimations of output power of the source depending on frequency band are given. The examples of applications are presented in phase lock-in scanning BWO regime.     

Parametric instability of quantum oscillator

It is shown that the dynamic symmetry group of an oscillator with variable frequency is the line or group SL(2, R). Classical and quantum oscillators are described respectively by two-dimensional representations of this group. The conditions for the appearance of parametric resonance are investigated. For the case of periodic frequency modulation, nonspreading coherent states are constructed.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 7–12, May, 1979.     

P-I-N Tuned hybrid device

Conclusions Thus, described device allows to control ultra high frequencies amplitude in wave propagation direction in the range from –3,5 dB to –43 dB. This device may be used as controlled filter with fixed controlling current values; as a variable attenuator with fluent current changing; and as a switcher with extreme controlling current value. The device has profitable weight-size parameters. Described device has two important advantages, namely higher attenuation level and a simple construction as compared with previously known one.     

An ultra-narrow band eight-pole dual-mode HTS patch filter

An ultra-narrow band eight-pole dual-mode HTS patch filter was designed and fabricated. The filter is constructed by four corner-cut square patches, each of which has two resonating modes. The influence of the change of the corner-cut position on the filter response was investigated by simulations. Four small rectangle patches were added in the topology of the filter as tuning tools. By employing this unique tuning structure, the simulated filter responses and current density distributions on the patches have been greatly improved. The filter was fabricated using double sided YBCO films on a 3 in. LaAlO₃ substrate. The measured results showed satisfactory performance with center frequency 2.494 GHz, fractional bandwidth 0.2%, return loss in passband better than 16 dB, and out-of-band rejection of the filter better than 90 dB at 15 MHz away from its center frequency.     

СВОЙСТВА СУРЬМЯНИСТОГО КАДМИЯ, ЛЕГИРОВАННОГО СЕРЕБРОМ, ПРИ НИЗКИХ ТЕМПЕРАТУРАХ

The temperature dependence of the resistivity and the Hall coefficient of Ag doped CdSb single crystals was investigated in the temperature range of 1.5–300°K. It was shown that Ag in CdSb gives shallow acceptor levels with an activation energyE _a =3.5×10^–3 eV. Presence of the admixture band determines the electrical properties of crystals at low temperatures. The energy width of this band is about 10^–3 eV for slightly doped crystals.     

Nanostructuring-induced modification of optical properties of p-GaAs (1 0 0)

A pulsed anodic etching method has been utilized for nanostructuring of p-type GaAs (1 0 0) surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is characterized by atomic force microscopy (AFM), room temperature photoluminescence (PL), Raman spectroscopy and optical reflectance measurements. AFM imaging reveals that the porous GaAs layer is consisted of a pillar-like of few nm in width distributed between more-reduced size nanostructures. In addition to the “infrared” PL band of un-etched GaAs, a strong “green” PL band is observed in the etched sample. The broad visible PL band of a high-energy (3.82 eV) excitation is found to compose of two PL band attributed to excitons confinement in two different sizes distribution of GaAs nanocrystals. The quantum confinement effects in GaAs nanocrystallites is also evidenced from Raman spectroscopy through the pronounced appearance of the transverse optical (TO) phonon line in the spectra of the porous sample. Porosity-induced a significant reduction of the specular reflection, in the spectral range (400–800 nm), is also demonstrated.     

Preparation and photoelectric properties of antimony selenium iodide

The dependence of the photoelectric current on the wave-length was measured on SbSeI crystals in the temperature range of 83–293°K. The maximum of the internal photoeffect was found in the region of 720–740 nm for various crystals at room temperature. The temperature dependence of the forbidden band width of SbSeI crystals was deduced from the shift of the photoeffect maximum. The results were compared with the properties of homological compounds SbSI and BiSI.     

Sources of intensive noise signals of millimeter wave band

The new method of the CW intensive noise signals excitation in millimeter wave band has been studied. With this aim in mind the O-type Backward Wave Oscillators, operating in chaotic oscillation regime, are proposed to use. The noise sources, based onBWO, have a high efficiency, universal power spectrums and feasibility of electronic tuning of the noise signal frequency in the relative range of 4–10%. Low voltage noise sources, operating in the bands needed over the range from 30to 60GHz, make possible output power of 8 – 25W and 4W respectively and 3 –dB power spectrum width more than 300M H z. Application of the suitableBWO offers to excite the noise signals in decimeter and centimeter ranges too.     

Bandwidth tunable high-Tc superconducting filter

We have developed a high-T_c superconducting band-pass filter, whose center frequency and bandwidth can be tuned independently, with steep attenuation at both lower and higher band edges. This tunable filter is composed of two different types of band-pass filters, one with steep attenuation at the lower band edge and the other with steep attenuation at the higher band edge. Two filters are connected in series and each filter is covered with additional dielectric plates, respectively. The tuning characteristics of the entire filter can be controlled by adjusting the distances between the dielectric plates and the substrate. The entire filter was fabricated monolithically on a 30-mm-wide and 60-mm-long LaAlO₃ substrate. A center frequency of 1.93 GHz, a 3 dB bandwidth of 20 MHz, and an attenuation of 30 dB, 1.0 MHz apart from both band edges, were obtained for the entire filter. Then, a sapphire plate was set above each of two filters, and a center frequency tuning of 10 MHz and a bandwidth tuning of 5 MHz were obtained by adjusting the distances between the substrate and the sapphire plates.     

Electrical conduction properties of Si δ-doped GaAs grown by MBE

The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25–300 K. The temperature dependence of carrier concentration shows a characteristic minimum at about 200 K, which indicates a transition from the conduction band conduction to the impurity band conduction. The temperature dependence of the conductivity results are in agreement with terms due to conduction band conduction and localized state hopping conduction in the impurity band. It is found that the transport properties of Si δ-doped GaAs are mainly governed by the dislocation scattering mechanism at high temperatures. On the other hand, the conductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in the studied structures.     

Luminescence centres in pure AgCl crystals

The temperature dependence and the influence of pressure on band width of blue-green luminescence were measured in pure AgCl crystals. The comparison of results obtained with other published data support the existence of two luminescence centres (in the temperature ranges between 130–160°K and between 20–30°K).     

Environmental influence on the IR fluorescence of Xe<Subscript>2</Subscript><Superscript>*</Superscript> molecules in electron beam excited Ar–Xe mixture at high density

We report new measurements of the near infrared (NIR) Xe₂^* excimer fluorescence in an electron–beam–excited Ar (90%)–Xe (10 %) mixture at room temperature. Previous measurements up to a density N≈2×10²⁶ m^-3 discovered a broad excimer fluorescence band at ≈7800 cm^-1, whose center is red–shifted by increasing N [A.F. Borghesani, G. Bressi, G. Carugno, E. Conti, D. Iannuzzi, J. Chem. Phys. 115, 6042 (2001)]. The shift has been explained by assuming that the energy of the optical active electron in the molecule is shifted by the density–dependent Fermi shift and by accounting for the solvation effect due to the environment. We have extended the density range up to N≈6×10²⁶ m^-3, confirming the previous measurements and extending the validity of the interpretative model. A detailed analysis of the width of the fluorescence band gives a value of 2.85 nm for the size of the investigated excimer state. Such a large value lends credibility to the validity of the proposed explanation of the experimental findings.     

Low-pass and high-pass filters using coaxial-type dielectric resonators

This paper proposes new low-pass and high-pass filters using coaxial-type dielectric resonators. The low-pass filter has a LC-type circuit structure and is composed of three inductances and two resonance circuits. The resonance circuits are the open-ended coaxial-type dielectric resonators whose length is g/4. The high-pass filter has a CL-type circuit structure. Two high-pass filters are described, one of them is composed of three capacitances andtwo resonance circuits, the other is composed of five capacitances and four resonance circuits. The operating frequency range of the low-pass filter is 0.13–0.9 GHz and the cutoffency is 900 MHz, and the insertion loss is 0.3 dB. The corresponding quantities of the high-pass filter are 0.9–2.5 GHz, 900 MHz, and 0.3 dB, respectively.     

变迹和啁啾光子晶体的特性研究

构造了变迹和啁啾的光了晶体结构,用时域有限差分(FDTD)法分析了它们的响应特性。分别对不同啁啾系数的光子晶体结构和不同变迹形式的光子晶体结构进行了比较分析。研究表明．啁啾结构的光子晶体与普通结构的光子晶体相比．禁带的带宽增加了,禁带的中心频率向低频处偏移．当啁啾系数在0～0．01之间以0．002变化率增加时．随着啁啾系数增大．禁带的宽度变大,禁带的中心频率减小：同样构造的线性变迹的光子晶体和正弦变迹的光子晶体对于光子禁带的中心频率和宽度有类似的影响。     

An Integrated Sideband-Separating SIS Mixer Based on Waveguide Split Block for 100 GHz Band with 4.0–8.0 GHz IF

We have developed an integrated sideband-separating SIS mixer for the 100 GHz band based on the waveguide split block. The measured receiver noise temperatures with 4.0–8.0 GHz IF are less than 60 K in the LO frequency range of 90–110 GHz, and a minimum value of around 45 K is achieved at 100 GHz. The image rejection ratios are more than 10 dB in the frequency range of 90–110 GHz. We have installed the sideband-separating SIS mixer into an atmospheric ozone-measuring system at Osaka Prefecture University and successfully observed an ozone spectrum at 110 GHz in SSB mode. This experimental result indicates that the sideband-separating SIS mixer is very useful for astronomical observation as well as atmospheric observation.