共查询到18条相似文献,搜索用时 109 毫秒
1.
2.
3.
4.
5.
越来越多的人相信,发展新一代在原理上全新的电子器件是下一世纪电子工业的希望所在.在这一方面,近年来已有一个又一个的量子器件原型见诸报道;还有更多的设想和建议不断被提出来,引起人们浓厚的兴趣.现在,又有一种新型小尺寸器件--单电子晶体管在在向我们招手.根据这种器件的发展前景,有人甚至提出了单电子学这一崭新的学科.单电子晶体管是与库仑阻塞这一著名的物理现象联系在一起的. 相似文献
6.
单电子效应与单电子晶体管 总被引:2,自引:0,他引:2
由于半导体超微细加工技术的发展,在半径为几百nm的量子点结构上观察到由单个电子的阻塞和隧穿引起的电流振荡,分别称为库仑阻塞,单电子隧穿和库仑振荡,与此效应有关的现象还有库仑台阶,旋转门效应,旋转门器件可利用作为电流标准测量,单电子晶体管将是下世纪大容量存贮器的最好选择,单电子效应的研究将开辟一门新的“人造原子物理学”。 相似文献
7.
8.
9.
本文系统研究了A1GaN/GaN基高速电子迁移率晶体管器件界面热阻和工作温度对器件在高功率下的电流坍塌效应的影响规律.研究发现低漏极电压下热电子是导致负微分输出电导的重要因素,器件工作温度变高会使负微分输出电导减小.高漏极电压下自加热效应是导致电流坍塌的一个重要因素.随着界面热阻的增加,器件跨导降低,阂值电压增大.同时,由于工作环境温度的增高,器件随之温度增高,载流子迁移率会显著降低.最终这两种因素会引起A1GaN/GaN基高速电子迁移率晶体管器件显著的电流坍塌效应,从而降低了器件整体性能. 相似文献
10.
针对传统单结GaN基高电子迁移率晶体管器件性能受电流崩塌效应和自加热效应限制的困境,对新型A1GaN/GaN/InGaN/GaN双异质结高电子迁移率晶体管的直流性质展开了系统研究.采用基于热电子效应和自加热效应的流体动力模型,研究了器件在不同偏压下电流崩塌和负微分电导效应与GaN沟道层厚度的相关.研究发现具有高势垒双异质的沟道层能更好地将电子限制在沟道中,显著减小高电场下热电子从沟道层向GaN缓冲层的穿透能力.提高GaN沟道层厚度可以有效抑制电流崩塌和和负微分输出电导,进而提高器件在高场作用下的性能.所得结果为进一步优化双异质结高电子迁移率晶体管结构提供了新思路,可促进新型GaN高电子迁移率晶体管器件在高功率、高频和高温等无线通讯领域内的广泛应用. 相似文献
11.
单电子晶体管(SET)作为灵敏静电计的灵敏度受到噪声的限制,其中散粒噪声(shot noise)是本征噪声,决定着单电子晶体管灵敏度的极限.利用射频(radio frequency,RF)单电子晶体管的极高的工作频率,可以消除SET的1/f噪声,从而达到极限灵敏度.利用一级低温低噪声放大器和一级室温放大器放大工作在反射模式的射频单电子晶体管的输出信号,使用LC共振电路,抬高了SET右边的整个微波系统的阻抗,使之与单电子的输出阻抗匹配,从而提高了RFSET静电计的灵敏度. 相似文献
12.
We introduce the ab-initio framework for zigzag-edged graphene fragment based single-electron transistor (SET) operating in the Coulomb blockade regime. Graphene is modeled using the density-functional theory and the environment is described by a continuum model. The interaction between graphene and the SET environment is treated self-consistently through the Poisson equation. We calculate the charging energy as a function of an external gate potential, and from this we obtain the charge stability diagram. Specifically, the importance of including re-normalization of the charge states due to the polarization of the environment has been demonstrated. 相似文献
13.
Observation of room temperature negative differential resistance in solution synthesized ZnO nanorod
We report the observation of negative differential resistance (NDR) in solution synthesized ZnO nanorod. The ZnO nanorod was fabricated as a two terminal planar device using lithographically patterned Au electrodes. The measured current–voltage response of the device has shown a negative differential resistance behavior. The peak-to-valley current ratio of the NDR is found to be greater than 4. The mechanism of this observed NDR effect has been explained based on charge trapping and de-trapping at the nanoscale contacts. It is the first observation of negative differential resistance effect in solution synthesized ZnO nanorod. 相似文献
14.
V. Antonov O. Astafiev T. Kutsuwa H. Hirai S. Komiyama 《Physica E: Low-dimensional Systems and Nanostructures》2000,6(1-4)
We study single-electron-transistor (SET) operation of the quantum dot (QD) in a strong magnetic field under weak illumination of far-infrared (FIR) radiation, which causes cyclotron resonance (CR) excitation inside the QD. We find that the SET conductance resonance is exceedingly sensitive to the FIR: It switches on (off) upon the excitation of just one electron to a higher Landau level inside the QD, whereby enabling us to detect individual events of FIR-photon (hν 6 meV) absorption. 相似文献
15.
Muhammad Naeem Awais Jeong-Dai Jo Kyung Hyun Choi 《Applied Physics A: Materials Science & Processing》2013,113(1):89-96
Polymeric negative differential resistive (NDR) switching was explored based on the sandwiched structure of indium titanium oxide (ITO) coated polyethyleneterepthalate(PET)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)/silver(Ag) through electrohydrodynamic atomization (EHDA) printing technique. The NDR switching in the fabricated device with the structure of ITO/PEDOT:PSS/Ag was analyzed through semiconductor device analyzer under polarity dependent bipolar sweeping voltage of less than ± 5 V ${\pm} 5~\mathrm{ V}$ . Effect of the current compliance (CC) in the NDR switching of the fabricated switch has been demonstrated. Multiple resistive switching sweeps were taken to scrutinize the robustness of the fabricated device over 100 cycles. The non-volatility of the as-fabricated device was checked against different time stresses over 2500 s. The switching mechanism is proposed to be due to the transition between PEDOT+ and PEDOT0 chains. The current conduction mechanism involved in the PEDOT:PSS based NDR switches is attributed to the ohmic conduction at lower voltages, while space charge limited conduction and NDR effects were prominent due to the injection of carriers at higher voltages. 相似文献
16.
《Current Applied Physics》2020,20(3):371-378
The negative differential resistance (NDR) effect was observed in a Pt/BiFeO3/TiO2/BiFeO3/Pt memory cell by using light-illumination as extra stimulation. Further, the coexistence appearances and gradually becomes obvious when the device is exposed to light-illumination, which display an excellent stability and reversibility of the coexistence of NDR and resistive switching (RS) at room temperature. Through analysis of the physical conduction mechanism, it is expected that a large number of photo-generated charge carriers are induced under light-illumination on the surface and interface of the heterojunction is responsible for the appearance of this coexistence phenomenon. Importantly, the NDR effect is strengthened by the competition transfer of charge carrier in the polarized electric field under light-illumination. This work shows that the coexistence of light-modulated NDR and RS can deeply explore the potential applications of light-controlled multifunctional devices. 相似文献
17.
Fabien Alibart Dmitri B. Strukov 《Applied Physics A: Materials Science & Processing》2013,111(1):199-202
Variations in the switching threshold voltage of memristive devices present significant challenges for their integration into large-scale circuits. In this paper, we propose to address this problem by adding a device exhibiting S-type (N-type) negative differential resistance (NDR) in series (parallel) with memristive devices. The main effect comes from the transition between low- and high-conductivity branches of the NDR device, which leads to a redistribution of the voltage drop inside the device stack, and, as a result, the effective lowering of variations in the switching threshold. The idea is checked experimentally using a TiO2?x memristive device connected in parallel with a tunnel GaAs diode. 相似文献
18.
Tunneling spectroscopy measurements have been carried out on a single molecule device formed by two Pd nanocrystals (dia.
∼5 nm) electronically coupled by a conducting molecule, dimercaptodiphenylacetylene. TheI-V data, obtained by positioning the tip over a nanocrystal electrode, exhibit negative differential resistance (NDR) on a background
M-I-M characteristics. The NDR feature occurs at ∼0.67 V at 300 K and shifts to a higher bias of 1.93 V at 90 K. When the
tip is held in the middle region of the device, a Coulomb blockade region is observed (±∼0.3 V) 相似文献