The effect of solute supersaturation on the ageing process of an Al 59,5 wt% zn alloy

The effect of the solution treatment temperature on the mechanism of the decomposition at room temperature of an quenched Al 59,5 wt.-% Zn alloy has been examined. The investigations were carried out using X-ray techniques, optical and transmission electron microscopy and measuring the changes in the dimensions, electrical resistivity and the hardness. The sequence of the phase transformations in the alloy quenched from 370°C were as follows. The transformation begins with spinodal decomposition. After some development of the spinodal structure, which is associated with increase in wavelength, the heterogenuous nucleation and growth of the zinc-rich particles occur within the spinodal structure. Simultaneously the discontinuous transformation was observed to grow into the spinodal structure. The decomposition of the same alloy quenched from 300°C (miscibility gap region) took place much more rapidly than when quenched from 370°C. Directly after quenching the spinodal structure was also observed using JEM-1000, coincidental with a remarkable increase of electrical resitivity. At the same time the heterogenuous nucleation and growth of the zinc particles, on the interfaces of the α-α′ phases was observed. The discontinuous transformation was also found within the α′ supercooled phase. The decomposition of the Al 38 at.-% Zn alloy quenched from 300°C appeared to be divided into two stages. In the first the decomposition of the zinc-rich α′ phase takes place and in the second one the transformation of the zinc-poor a phase occurs. These two transformations are distinctly marked on the curves of the changes in the dimensions, electrical resistivity as well as in the intensity of the (101) reflexion of the zinc phase.     

Silicon inhomogeneities in Fe-3 wt% Si single crystals grown by floating zone melting

The development of radial Si inhomogeneities and striations with the growth rate increasing from 20 to 65 mm/h has been observed in Fe-3 wt% Si single crystals grown by floating zone melting. Within a relatively small interval of growth rates (49–54 mm/h) the distinct striations extend from the periphery with enhanced Si concentration to the whole crystal volume. The solid state diffusion cannot be responsible for this phenomenon although it modifies the striation structure, especially at lower growth rates.     

Stabilization Effect of Zr and Ti Additions on the Ageing Characteristics of Al-1 wt% Si Alloy Through a Creep Study

Al-1 wt% Si and Al-1 wt% Si-0.1 wt% Zr–0.1 wt% Ti alloys were used to trace the effect of Zr and Ti additions on the behaviour of the steady state creep. After solid solution treatment specimens of both alloys were aged at 623, 673, 723 and 773 K and creep tests were performed at room temperature by applying stresses of 60.0, 62.4, 64.7 and 67.1 MPa. The results showed a sound stabilization effect of Zr and Ti on the ageing characterstics of binary Al-1 wt% Si alloy. Values of the applied stress sensitivity parameter, m, obtained were in the range of (20–34) for Al Si alloy and (14–19) for Al Si Zr Ti alloy. Time to rupture was found to be strongly increased by Zr and Ti additions. The activation energies of the precipitation process involved were found to be 81.9 kJ/mole and 33.7 kJ/mole of the Al Si and Al Si Zr Ti alloys respectively.     

Observation of the periodic fluctuant dendritic structure in an Al–38 wt% Cu hypereutectic alloy processed by ACRT-B method

The microstructure of periodic fluctuant dendritic θ in a matrix of +θ eutectic was obtained in an Al–38 wt% Cu alloy processed by ACRT-B method grown at growth velocities (V) ranging from 5 to 60 μm/s and crucible rotating in a trapezoidal way with maximum rotation rates (Ω_max) ranging from 100 to 400 rpm. Formation of this structure is explained by the influence of the periodical Ekman flow on the growth of dendritic θ during the spin-up and spin-down process. It was also observed that the +θ eutectic between the primary dendrites of θ (CuAl₂) is not periodic and fluctuant during ACRT-B process. This is quite different from our previous observation of periodic eutectic in Al–Cu eutectic processed by similar ACRT-B method.     

Dependence of Transient and Steady State Creep on Grain Size in Aged Al-10 wt% Zn Alloy

The effect of grain size as well as ageing temperature on the creep characteristics of Al-10 wt% Zn alloy have been studied. It has been found that the steady state creep rate ε decreases by increasing grain size, whereas it increases by increasing ageing temperature. It is suggested that the decrease of ε may be due to the change in the density of mobile dislocations in addition to the change in concentration of point defects and impurity atmospheres. An empirical formula ε = ml⁻² + c has been proposed to correlate the creep rate and grain size. The values of the activation energies controlling the creep processes corresponded to that required for dislocation glide.     

Effect of a vertical magnetic field on the dendrite morphology during Bridgman crystal growth of Al–4.5 wt% Cu

The effect of a vertical high magnetic field (up to 10 T) on the dendrite morphology has been investigated during Bridgman growth of Al–4.5 wt%Cu alloys experimentally. It is found that the field causes disorder in dendrites and their tilt in orientation. Along with the increase of the magnetic field and decrease of the growth velocity, the dendrites became broken and orientated in 1 1 1 along the direction of solidification instead of 1 0 0. The field also enlarged the primary dendrite spacing and promoted the branching of the dendrites to form high-order arms. Above phenomena are attributed to the thermoelectromagnetic convection effect and orientation caused by the high magnetic field.     

Influence of La/Ce-doping on phase transformation and crystal growth in TiO2-15 wt% ZnO gels

Titania based ceramic is a good candidate for environmental sensing materials. Ion doping is an effective method to improve the properties by modifying their microstructure and phase composition. By using differential thermal analysis and X-ray diffraction methods, the transformation behaviors of La³⁺/Ce³⁺-doped TiO₂-15  wt% ZnO gels were studied so as to modify the phase transformation and decrease the granularity of crystals. Experimental results show that, anatase, rutile and ZnTiO₃ nanocrystals can be tailored by varying La³⁺/Ce³⁺ contents and sintering temperatures. La³⁺/Ce³⁺ doping decreases the transformation temperature of gel to anatase and the forming temperature of ZnTiO₃ phase, enhances the transformation temperature of anatase to rutile and results in appearance of Zn₂Ti₃O₈ interphase. With the increases of La³⁺/Ce³⁺ contents, the transformation rates of ZnTiO₃, gel to anatase and anatase to rutile, as well as the granularity of the crystals are reduced. Ultimately, the action mechanism of La³⁺/Ce³⁺ doping was discussed.     

Structural and magnetic characterization of composite YCo5/α-Fe (20 wt%) powders prepared by mechanical alloying and subsequent annealing

Powder mixtures of YCo₅ + α-Fe (20 wt%) were prepared by high energy mechanical alloying under Ar using a SPEX 8000 mill and subsequent vacuum annealing. The structural and magnetic properties were investigated by X-ray diffraction, DSC, and magnetic measurements. After 4 h of milling, the alloyed powders were found to be composed of an amorphous Y–Co phase and α-Fe with a mean grain size strongly reduced. The DSC curves exhibited an irreversible broad exothermic peak with a maximum at 555 °C associated with the crystallization process. Subsequent high vacuum annealing in the temperature range 550–750 °C led to the formation of rhombohedral Th₂Zn₁₇-type and α-Fe(Co) phases. Samples were magnetically soft showing low remanence and room temperature coercivity in the range 470–800 Oe. The latter is in agreement with the low magnetocrystalline anisotropy along the basal plane exhibited by the Y₂(Co, Fe)₁₇ phase.     

Thermal properties and crystallization of iron phosphate glasses containing up to 25 wt% additions of Si-, Al-, Na- and U-oxides

The thermal properties (expansion, T_g and T_SOFT.) of glasses, having 56-66% P₂O₅, 14.8-34.2% Fe₂O₃ and 2-25 wt% additions of SiO₂, Al₂O₃, Na₂O and UO₂, were comparatively estimated from dilatometric measurements in similar conditions. The T_g reversibility was clearly verified by varying the heating rates between 1 and 5 °C min⁻¹. From linear equations fits of the various glass properties as functions of the six components it is suggested the iron, sodium and uranium oxides decrease the thermal expansion (for 50 < T ? 300 °C), T_g and T_SOFT. From DTA/XRD analysis of three glasses it was confirmed the crystallization tendency decreased with increasing the UO₂ level in the glasses. Leaching test data for two compositions containing Na₂O suggest addition of UO₂ increases the chemical durability of the related glass. The roles of UO₂, Na₂O and Fe-oxide species as structural components of the glass network are discussed.     

Crystal habit prediction ‐ Including the liquid as well as the solid side

Commercially available methods of morphology prediction utilize molecular dynamics to estimate the crystal growth rates but predominantly consider the solid side. For the extension of these methods to a multi‐component solid‐liquid system the diffusion coefficient is required. Since, the diffusion coefficient enables the calculation of crystal growth rates and the morphology in presence of additives and solvents. Modeling the diffusion coefficient is achieved by conducting MD on a system consisting of the crystal surface and the liquid phase. The achieved results match very well with the calculated diffusion coefficient (Wilke‐Chang). In this case study benzoic acid is used as model substance with water as solvent.     

On the equilibrium crystal habit as predicted by the Gibbs-Curie principle

It is pointed out that there is no physical mechanism for the change, dictated by the Gibbs-Curie principle, from a nonequilibrium habit of a macroscopic faceted crystal to the equilibrium habit. The reason why this principle is inapplicable to such a crystal is established.     

缓冲层ZnPc对有机电致发光器件特性的影响

本文研究了酞菁锌(ZnPc)薄膜的表面形貌及ZnPc薄膜作为缓冲层对有机电致发光器件(OLEDs)光电特性的影响.对比两组样品的AFM图像,ZnPc薄膜相比于ITO薄膜,其表面的岛面积较大,薄膜表面更连续平整,基本上覆盖了ITO膜表面针孔,减少了表面的缺陷.另外,ZnPc薄膜的岛分布均匀有序.使用ZnPc作为缓冲层的器件性能明显好于未使用ZnPc修饰的器件,在7.42V的驱动电压下的最大发光亮度达到1.428kcd/m2,在4.3V电压驱动下时,最大光功率效率为1.411m/W;而未使用缓冲层的器件在8V的驱动电压下达到最大发光亮度达到1.212kcd/m2,在5.5V电压驱动下时,最大光功率效率为0.931m/W.     

Simple crystal forms as the orbits of crystallographic symmetry groups

Simple crystal forms are analyzed as the orbits of point symmetry groups on a set of crystal planes of space. All known polyhedra are described and structurized based on the theory of the orbits of groups, which provided a new, more harmonious approach to this problem. The orbits of groups can be general or particular and characteristic or non-characteristic. All possible versions of all crystallographic groups are listed in the table. The problem of the equivalence of polyhedra as the orbits of point symmetry groups is considered. An analysis of this problem has shown that 32 point crystallographic symmetry groups correspond to 139 symmetrically nonequivalent polyhedra.     

Synthesis of hybrid mesoporous spheres using the chitosan as template

Hybrid mesoporous spheres of Al and Si oxides were synthesized for the mixture of organic material (chitosan) with inorganic material (aluminum and silicon hydroxide). It was observed that chitosan with larger polymerization degree, resulted in a larger mechanical resistance of the spheres. The oxides were characterized by the following: Fourier transform infrared spectroscopy (FTIR), X-ray diffraction analysis (XRD), differential scanning calorimetry (DSC), as well as, thermogravimetric analysis (TGA), scanning electron microscopy (SEM) and adsorption isotherms of N₂ (BET). Highly uniform oxide sphere diameters were obtained (average of 1.0 mm). The results of the adsorption isotherms indicated that the material is mesoporous. The surface area of the materials ranged between 620 and 245 m²/g, and the pore volume varied between 0.82 and 0.28 cm³/g, depending on the molar ratio of the organic and inorganic materials.     

Johari-Goldstein relaxation as the origin of the excess wing observed in metallic glasses

Measurements of the shear loss modulus G″ of amorphous Zr₆₅Al_7.5Cu_27.5 at 5.4 kHz were reported by Rösner, Samwer and Lunkenheimer. They observed that the measured G″ are in excess of the contribution from the α-relaxation, indicating the existence of an ‘excess wing’ in amorphous metals like that found in molecular glass-formers. They speculated that the excess wing found in amorphous metal is due to the presence of an unresolved Johari-Goldstein (JG) secondary relaxation. In this work, the coupling model is used to calculate the temperature T_JG at which the JG relaxation frequency coincides with the experimental frequency of the isochronal measurement. The location of T_JG is well within the temperature range where the excess wing of Zr₆₅Al_7.5Cu_27.5 appears at 5.4 kHz. Hence, the result supports the assertion of Rösner et al. that the excess wing found in the metallic glass originates from the intrinsic JG relaxation.     

The Mechanism as SI GaAs Substrate Influences the Resistivity of the Epitaxial Layer

It is known that it is possible to grow a semi-insulating or, at least, a high resistivity GaAs epitaxial layer without doping on an SI GaAs substrate by VPE. The SI substrate is suspected as the originator of the high resistivity intermediate layer and diffusion and/or out-diffusion are accepted as mechanisms explaining this effect. In this work carrier concentration depth profiles were studied in various GaAs multi-layered epitaxial structures grown on SI GaAs substrates before and after various heat treatment procedures in order to study the diffusion and outdiffusion processes. It is concluded that the role of the diffusion is negligible and the out-diffusion process is insignificant, and the main, i.e. the determining effect in the compensation process is the growth mechanism of the layer. The impurities set free from the substrate by chemical etching processes rebuilt into the growing layer. In addition formation of EL2 centres may be initiated by As rich gas phase composition following the in-situ etching.