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1.
Thermoluminescence and the emission of γ-irradiated BaFCl:Eu2+ has been studied. A well defined glow peak at 400 K and a shoulder at 480 K are obtained in addition to those obtained as in undoped BaFCl. Thermoluminescence emission has shown a band at about 390 ∼ 400 nm. Additional glow peaks have been attributed to the luminescence centers as caused by europium impurity.  相似文献   

2.
Glow curves and optical absorption spectra of X-irradiated flux grown crystals are studied. Two glow peaks at 370, 585 K and three shoulders at 420, 540 and 610 K are obtained. Optical absorption studies reveal two absorption bands at 405 and 475 nm and a well defined peak at 295 nm. Room temperature annealing and bleaching studies have suggested that the glow peaks at 370 and 585 K may correspond to impurities and F-centers of 295 nm band respectively. The other shoulders at 420, 540 and 610 K are attributed to other F-aggregate centers. The glow peaks are analysed using first order kinetics.  相似文献   

3.
Thermoluminescence (TL) and optical absorption measurements have been carried in γ-irradiated KCl, KBr and various compositions of KClxBr1–x mixed crystals as a function of irradiation time and composition. The position of the main glow peak (high temperature peak) and F-band position are found to vary non-linearly with composition, showing a correlation between colour centers and TL. The TL peaks have been analysed by numerical fitting and the trap depths and frequency factors have been calculated for different compositions of the mixed crystals. The thermal ionisation energy of F-centers has been calculated for the mixed crystals and it is found to vary non-linearly with composition. The results obtained in mixed crystals have been discussed in terms of high disorder present in them.  相似文献   

4.
Thermoluminescence (TL), optical absorption are used to correlate thermal annealing of Z2-centres with TL peak occurring around 110 °C in Terbium doped NaCl crystals. The TL glow peak occurring around 190 °C it attributed to the thermal annealing of F-centres. The thermal activation parameters are calculated for both Z2- and F-centre peaks.  相似文献   

5.
Thermoluminescence (TL) studies have been carried out in KBr, KI, and in different compositions of KBrxI1–x mixed crystals as a function of X-irradiation time. The TL glow peaks have been analysed and the trap depths and frequency factors have been calculated for different compositions. The complex TL peaks observed in these crystals were isolated by using thermal cleaning technique. The various glow peaks observed in these crystals were attributed to native impurities, first stage and second stage colour centers and the results have been discussed.  相似文献   

6.
Thermoluminescence (TL) of Pr-doped KCI is studied. The influence of pre-heat treatment and optical bleaching of the glow curves and the production of Z1 centers are discussed. The glow curves of KCI containing 1062 ppm of praseodymium (Pr) shows one shoulder at 365 K (T1) and two peaks around 408 K (T2) and 443 K (T3), respectively. Bleaching of X-irradiated crystals shows that the peak T2 is enhanced whereas other two (T1, T3) get suppressed. Optical absorption studies of the crystals before and after F-bleaching shows that the F-band decreases and shifts towards longer wavelengths. The decrease is accompanied by broadening towards the longer wavelength. The T2 peak is attributed to Z1 centres. It is shown that T1 corresponds to shallow centers and T3 peak is attributed to F-centers.  相似文献   

7.
Single crystals of calcium tungstate and strontium tungstate have been grown by double decomposition flux reaction technique using lithium chloride as flux. Growth conditions are optimized to synthesize well faceted crystals. Effect of primary and secondary flux density in the growth charge has been studied. Thermogravimetric study reveals that the grown crystals are highly stable in the temperature range 25 – 1000°C. Analysis of optical absorption normal to the ab‐plane in the spectral range of 200 – 800 nm reveals the true absorption edge, the nature of transition being the allowed indirect one at 4.60 eV and 4.56 eV respectively for CaWO4 and SrWO4. The crystals have been characterized by determining useful pertinent optical and dielectric parameters. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

8.
Thermoluminescence (TL) studies have been carried out in different compositions of Sr1–xEuxF2 + x mixed crystals as a function of X-irradiation time. Three groups of TL glow peaks in the temperature ranges (340, 360 ∼ 370 K), (460 ∼ 475, 540 ∼ 575 K) and (615 ∼ 635, 680 ∼ 720 K) are identified. The growth rates of different glow peaks have been compared with each other to estimate the growth kinetics. The three groups of TL glow peaks are attributed to thermal ionization of radiative impurity centers, different stages of F-centers and other kinds of defect centers such as F-interstitials. The shift in the glow peak maxima is perhaps due to unassociated impurities surrounding F-centers causing a change in configuration. The concentration quenching of TL output due to increased europium is pertinent in Sr1–xEuxF2 + x mixed system.  相似文献   

9.
Thermoluminescence (TL) glow curves were recorded in KBr, KI and in different compositions of KBrxI1-x mixed crystals at LNT. For this a cryostat has been designed and fabricated. The glow peaks observed in these crystals have been attributed to differnent colour centers.  相似文献   

10.
Single crystals of BaFCl have been growth by flux technique using BaF2 and BaCl2. Etching with formic acid revealed dislocation etch pits on (001) cleavage faces of the crystals, at room temperature. The influence of etching parameters such as undersaturation, temperature and concentration of poison in the etchant is studied. Decreasing the undersaturation of formic acid by reducing the percentage of water and increasing the temperature of the etchant were found not to have any effect on the morphology of etch pits. However, as the CdCl2 poison concentration is gradually increased, the orientation of the pits change from 〈100〉 to 〈110〉 at high concentration.  相似文献   

11.
The influence of the presence of BaO impurity on the optical absorption, radiation hardness and thermally stimulated luminescence of BaF2 has been investigated. The presence of oxygen impurity gives rise to three absorption bands in the UV region, peaking around 220, 280 and 335 nm. Further, the impurity is found to be detrimental to crystal hardness against ionizing radiations. The thermally stimulated luminescence (TSL) has been studied from gamma-irradiated crystals containing different fractions of BaO impurity. Four prominent glow peaks around 100°C (peak I), 150°C (peak II), 220°C (peak III) and 290°C (peak IV) are observed for crystals containing BaO impurity concentrations lower than 0.5% (by wt). For crystals containing higher impurity concentrations, two additional peaks around 75°C and 260°C are also observed. The kinetics of TSL emission is observed to be of first order, implying that the absorption and the emission centers responsible for TSL are the same. The normalized TSL output for peak I is found to vary linearly with the concentration of oxide impurity. This fact can be utilized to detect the presence of minute amounts of oxygen in BaF2 lattice, which is crucial to the growth of crystals exhibiting high radiation hardness.  相似文献   

12.
Photoluminescence (PL) spectra of Tl4Ga3InSe8 layered crystals grown by Bridgman method have been studied in the wavelength region of 600‐750 nm and in the temperature range of 17‐68 K. A broad PL band centered at 652 nm (1.90 eV) was observed at T = 17 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.13 to 55.73 mW cm‐2 range. Radiative transitions from donor level located at 0.19 eV below the bottom of conduction band to shallow acceptor level located at 0.03 eV above the top of the valence band were suggested to be responsible for the observed PL band. From X‐ray powder diffraction and optical absorption study, the parameters of monoclinic unit cell and the energy of indirect band gap were determined, respectively. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

13.
Thermoluminescence (TL) studies of cobalt-doped Al2O3 crystals irradiated with X-rays have shown that the TL glow curve consists of three peaks at 105, 195 and 260°C. Bleaching, annealing and quanching studies have been performed in order to understand the nature of colour centers responsible for the formation of the three peaks. The values of the fundamental parameters like trap depth and frequency factor are estimated from TL data and the results obtained are discussed.  相似文献   

14.
In this work, Ce:YAG crystal with the size of ?4 in was successfully grown by the TGT method. The optical and scintillation properties of as-grown Ce:YAG crystals were investigated. Three obvious absorption bands at 223, 340 and 460 nm and two weak color-center absorption bands at 296 and 370 nm are observed in as-grown Ce:YAG crystal. Fluorescence with an emission peak at 398 nm is observed due to the color centers, and absorption bands of the color centers can be eliminated by annealing in O2 or H2 atmosphere at 1673 K for 24 h. Yellow-green fluorescence centered at 530 nm is found when the crystal was excited at 460 nm and the 530 nm excitation spectrum shows two peaks at 340 and 460 nm. X-ray fluorescence spectrum of as-grown crystal shows three emission peaks at 300, 360 and 530 nm. An average light output of 1360 phe/MeV and a single exponential decay with the decay time constant of 62.97 ns are found in as-grown Ce:YAG crystal.  相似文献   

15.
The absorption spectra of undoped Y2SiO5 crystals were studied before and after γ‐irradiation. After γ‐irradiation, the additional absorption peaks at 260‐270 and 320nm were observed in as‐grown and H2‐annealed Y2SiO5 crystal, but it did not occur in air‐annealed Y2SiO5 crystal. These absorption peaks were attributed to F color centers and O hole centers, respectively. Owing to more oxygen vacancies and color centers in H2‐annealed Y2SiO5 crystal than that in as‐grown Y2SiO5 crystal after γ‐irradiation, the additional absorption peaks were more intense in the former than that in the latter. With the irradiation dose increasing from 20 to 220kGy, the intensity of additional absorption peaks increased. © 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim  相似文献   

16.
Perfect single crystals of cadmium oxalate trihydrate have been grown using the slow and controlled reaction between Cd+2 and (C2O4)‐2 ions in agar‐agar gel, resulting in the formation of insoluble product Cd(COO)2.3H2O. The optimum growth parameters have been determined. The variation of magnetic moment of the grown crystals under an applied static magnetic field is studied and the material is found to be diamagnetic. The polarizability is found sensitive to optical band gap. An empirical relation between magnetic susceptibility and electronic polarizability has been established. Optical absorption spectra of the sample recorded in the range 200‐2500 nm reveal transitions involving absorption and emission of phonons. The detailed study supports the existence of allowed direct and indirect allowed gaps in the material. The direct allowed transition prevails in the region of relatively higher photon energy. Some feeble disorder in the crystal is conceived to be present. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

17.
The valence states and coordination of titanium ions in beryl crystals grown from flux and by gastransport reactions have been studied by the methods of electron paramagnetic resonance (EPR) and optical spectroscopy. The parameters of the EPR spectra for Ti3+ in the Al3+ and Si4+ sites are determined. It is found that at concentrations exceeding 0.1–0.15 wt %, the EPR-spectra have additional lines due to exchange-bonded pairs of Ti3+ ions. It is shown that the two-humped absorption band with the maxima at 495 (π), 545 (π), and 495 (π) nm are formed due to Ti3+ ions located in the octahedral position.  相似文献   

18.
PbF2-and BaF2-doped PbWO4 crystals have been grown by the Czochralski method. The scintillation characteristics of the grown crystals have been determined. It is shown that introduction of BaF2 leads to an increase in the light yield of PbWO4 crystals by 20%, while PbWO4:PbF2 crystals demonstrate a significant increase in radiation hardness.  相似文献   

19.
Defect characterization of Tl2Ga2Se3S single crystals has been performed by thermoluminescence (TL) measurements at low temperatures between 10 and 70 K with various heating rate ranging from 0.6 to 1.0 K/s. The TL signal due to the luminescence from trap centers revealed one glow peak having maximum temperature of 36 K. Curve fitting and various heating rate methods were used for the analysis of the glow curve. The activation energy of 13 meV was found by the application of curve fitting method. This practical method also established that the trap center exhibits the characteristics of mixed (general) kinetic order. In addition, various heating rate analysis gave a compatible result (13 meV) with curve fitting as the temperature lag effect was taken into consideration. Distribution of traps was also investigated using an experimental method. A quasi‐continuous distribution was attributed to the determined trap centers.  相似文献   

20.
《Journal of Crystal Growth》2006,286(1):126-130
The absorption spectra of the undoped Y2SiO5 and Eu3+-doped Y2SiO5 crystals grown by the Czochralski technique were compared before and after annealing and, similarly, the unannealed and annealed crystals after γ-ray irradiation. The absorption bands of Eu2+ ions with peaks at 300 and 390 nm were observed in the as-grown Y2SiO5:Eu3+ crystal. These peaks were more intense in H2-annealed and irradiated Y2SiO5:Eu3+ crystals. The additional absorption peaks at 260 and 320-330 nm which were attributed to F color centers and O hole centers were observed in irradiated undoped Y2SiO5 and Y2SiO5:Eu3+ crystals, respectively.  相似文献   

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