Verteilungskoeffizienten und Konzentrationsanreicherungen an der Phasengrenzfläche bei ebenem und zellularem Erstarren von Zinn-Zink-Legierungen

The experimental results of KRUMNACKER on the effective distribution coefficient k_eff and the concentration-profil at the solidification interface were examined. On the basis of this examination and some new calculations the depencence of the segregation coefficient on the solidification rate R and on the concentration C₀ is studied in the cases of planar and cellular solidification. — In the case of planar interface the dependence of k_eff on the solidification rate is that of the Burton-Prim-Slichter-theorie. The interface distribution coefficient is not a function of R, or C₀. Thus, the result od BRICE , basing on the same experiments, is not correct. It is impossible, to improve the model of BRICE by these values. — In the case of cellular growth the distribution depends on the diffusion in the diffusion layer at the interface and on the segregation in the grooves of the cells. Under the applied experimental conditions of a large diffusion-boundary-layer the diffusion determines the dependence of k_eff on the solidification rate also under the condition of cellular growth.     

Periodic Multilayers MoSi2/Si with a Large Number of Periods

Different approaches to decreasing mechanical stresses developed in MoSi₂/Si multilayers with increase of number of periods due to structural reconstruction in layers of amorphous silicon and nanocrystalline MoSi₂ were studied by scattering CuKα X-ray radiation at small and large angles, cross-sectional electron microscopy and micrometry of substrate sag. It was shown that effective relaxation of mechanical stresses in MoSi₂/Si multilayers is achieved by annealing them at ∼320 °C during 1 hour, or by deposition of layers at substrate temperature ∼320 °C, or by increasing sputtering gas pressure up to 7 × 10^—3 Torr in case of argon. Optimal conditions for deposition of MoSi₂/Si multilayers with periods N > 10³ and high reflectivity of X-rays with wavelengths 12.4—20.0 nm are: substrate temperature T_s = 220 °C, argon pressure P_Ar = 3 × 10^—3 Torr, layer deposition rate 1 nm/s.     

Laser produced amorphous phases in NbSi and VSi thin films

The binary systems NbSi and VSi are investigated by laser induced melting and quenching of vapor deposited thin films. Glassy phases of various compositions are produced. The established compositional glass forming ranges support that the equilibrium compounds Nb₄Si is stable only at high temperature. Thermal decomposition of the amorphous NbSi films proceeds via several intermediate stages. In particular, the AuCu₃-type configuration of Nb₃Si was found to be formed. In addition, amorphous NbSi films around 20 at.% si show the formation of an undentified metastable compounds upon post-irradiation annealing. Amorphous VSi films proved to be stable up to at least 500°C. Above this temperature they decompose directly into their respective equilibrium phases.     

Characterization and coagulation performance of solid poly-silicic–ferric (PSF) coagulant

An inorganic polymer, liquid poly-silicic–ferric (PSF) coagulant, with different Si/Fe molar ratios was prepared using water glass, FeSO₄ · 7H₂O and NaClO₃ by co-polymerization. The solid PSF made from liquid PSF by two different solidification approaches was investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. A comparison of coagulation behavior between PSF and polyferric sulfate (PFS) was explored. The results indicate that PSF is a complexation compound of Si, Fe and other ions, instead of a simple mixture of raw materials. The surface morphology of solid PSF is a function of the solidification method and the Si/Fe ratio. The reaction time needed in preparing solid PSF with excellent coagulation performance is shorter than that in liquid PSF. The solidification process is not a simple dehydration from liquid coagulant, but a re-preparation process. The optimal dose by PSF is 7.5 mg/L according to residual turbidity, in comparison with 10.5 mg/L by PFS. PSF has higher UV₂₅₄ removal than PFS, with a difference from 10% to 60% at given dose range. When settling time with solid PSF as coagulant increases, the slight reduction of turbidity removal caused by solidification can be retarded, and the removal of dissolved organic matters can be improved.     

Interfacial stability and grain diameter of the metal phase of directionally solidified Al-Si-type eutectics

The morphology of the solid-liquid interface and the metal phase grain diameter of Al—Si-type eutectics (Al—Si, Ag—Si, Ag—Ge, Zn—Ge) were investigated in the range of a growth rate R = 0.2 … 20 mm/h and of a temperature gradient at the solid-liquid interface G = 2 … 25 K/mm. Three types of interfacial morphologies depending on the G/R ratios were found out. The G/R ratio of the transition from a planar to a nonplanar solid-liquid interface corresponds to the critical G/R|_c ratio, which can be calculated by the criterion of the constitutional undercooling. The grain diameter of the metal phase depends on growth parameters as follows: d_K ∼ R^—rG^—g with r = 0.33 … 0.43 and g = −0.37 … 0.03.     

Mixed-phase solidification of thin Si films on SiO2

Mixed-phase solidification (MPS) is a new beam-induced solidification method that can produce large-grained and highly (1 0 0)-surface textured polycrystalline Si films on SiO₂. The grains resulting from this mixed-phase solidification (MPS) method, which was conceived based on a well-known phenomenon of coexisting solid–liquid regions in radiatively melted Si films, are found to be essentially devoid of various intragrain defects that always plague, and subsequently degrade the utility of large-grained Si films previously obtained using other crystallization techniques. It is experimentally shown that multiple exposures are required in order to generate such a polycrystalline microstructure from an initial amorphous precursor. The observed trends are conceptually explained in terms of the melt being initiated primarily at grain boundaries in polycrystalline films, and melting and solidification subsequently proceeding laterally at interface-location specific rates as determined by the local thermodynamic factors, which include the anisotropic surface and interfacial energies of the grains, and the unusual local thermal profile—all transpiring within a near-equilibrium but nonisothermal and dynamic environment that needs to address the thermal and stability requirements associated with the coexisting solid–liquid regions.     

Effects of structure instability of a V3Si single crystal from X-ray scattering data

Diffuse X-ray scattering from a V₃Si single crystal was studied at room temperature. It was demonstrated that the structure possesses instability regions associated with the formation of a new phase. The characteristic features of the q dependence of diffuse scattering are indicative of the presence of two-types of domains— those randomly distributed over the crystal and those forming a spatially periodic distribution.     

Electrical properties of liquid 3d transition metal–Si alloys

The electrical resistivity, R, and the thermoelectric power, S, have been measured for liquid transition metal–Si alloys (TM_cSi_1−c, TM = Ni, Fe, Mn), and liquid Cr_0.1Si_0.9 and Co_0.1Si_0.9 alloys as a function of temperature. The electrical resistivity increases rapidly with the addition of Fe, Mn and Cr to liquid Si and the liquid Mn_cSi_1−c alloys with 1 ⩾ c ⩾ 0.6 have an electrical resistivity of approximately 200 μΩ cm. The composition dependence of the electrical resistivity for liquid Fe_cSi_1−c and Ni_cSi_1−c systems exhibits a maximum at the composition c = 0.5 and c = 0.6, respectively. Liquid TM–Si alloys have a negative value of thermoelectric power over the wide composition range. The variation of R and S by the addition of Fe, Co and Ni solutes to liquid Si is in good agreement with that estimated from the 3d resonant scattering theory. The composition dependence of R and S of liquid Ni–Si can be qualitatively explained by the extended Ziman’s formula.     

Annealing effect on electrical and photoconductive properties of Si implanted GaSe single crystal

GaSe single crystals grown by Bridgman method have been doped by ion implantation technique. The samples were bombarded in the direction parallel to c‐axis by Si ion beam of about 100 keV to doses of 1 × 10¹⁶ ions/cm² at room temperature. The effects of Si implantation with annealing at 500 and 600 °C on the electrical properties have been studied by measuring the temperature dependent conductivity and photoconductivity under different illumination intensities in the temperature range of 100–320 K. It is observed that Si implantation increases the room temperature conductivity 10⁻⁷ to 10⁻³ (Ω‐cm)⁻¹ depending on the post annealing temperature. The analysis of temperature dependent conductivity shows that at high temperature region above 200 K, the transport mechanism is dominated by thermal excitation in the doped and undoped GaSe samples. At lower temperatures, the conduction of carriers is dominated by variable range hopping mechanism in the implanted samples. Annealing of the samples at and above 600 °C weakens the temperature dependence of the conductivity and photoconductivity. This indicates that annealing of the implanted samples activates Si‐atoms and increases structural deformations and stacking faults. The same behavior was observed from photoconductivity measurements. Hence, photocurrent‐illumination intensity dependence in the implanted samples obeys the power low I_pc ∝ Φⁿ with n between 1 and 2 which is an indication of continuous distribution of localized states in the band gap. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Low-temperature RPCVD of Si,SiGe alloy,and Si1−yCy films on Si substrates using trisilane (Silcore)

Si homo-epitaxial growth by low-temperature reduced pressure chemical vapor deposition (RPCVD) using trisilane (Si₃H₈) has been investigated. The CVD growth of Si films from trisilane and silane on Si substrates are compared at temperatures between 500 and 950 °C. It is demonstrated that trisilane efficiency increases versus silane's one as the surface temperature decreases. Si epilayers from trisilane, with low surface roughness, are achieved at 600 and 550 °C with a growth rate equal to 12.4 and 4.3 nm min⁻¹, respectively. It is also shown that Si_1−xGe_x layers can be deposited using trisilane chemistry.     

Molecular dynamics simulation for the rapid solidification process of MgO–Al2O3–SiO2 glass–ceramics

A molecular dynamics simulation method was used to study the effects of the microstructure on the solidification process of different cooling rates in the MgO–Al₂O₃–SiO₂ glass–ceramics with cordierite as the main crystalline phase. The reasons for changes in the microstructure during the solidification process were analysed by the radial distribution function curve, the bond angular distribution, the coordination number and the volume changes. The results showed that the cooling rate greatly affected the crystallisation process and the glass transition process. When the cooling rate was too fast, the atoms could not undergo a massive displacement before they were “frozen”, and the ability of atoms to achieve an equilibrium position was limited. Some amorphous phases were formed as a result of the disorder of the atomic arrangement, then some crystalline phase precipitated from the vitreous, and a glass–ceramic material was eventually formed.     

X-ray diffraction measurements for liquid Ge–Si alloys using synchrotron radiation

Energy dispersive X-ray diffraction measurements have been carried out for liquid Ge_1−xSi_x alloys (x = 0.0, 0.3, 0.5, 1.0) using synchrotron radiation at SPring-8. We measured the X-ray diffraction spectra of liquid Ge and Si up to a high temperature range, (liquid Ge from 1270 to1870 K and liquid Si from 1680 to 2020 K), liquid Ge_0.7Si_0.3 at 1620 K, and liquid Ge_0.5Si_0.5 at 1540, 1590, 1670 and 1720 K. The total structure factors of the liquid Ge–Si alloys have a characteristic shoulder on the high-wave-vector side of the first peak. We deduced a pair distribution function from the Fourier transform of the observed structure factor, which was weakly dependent on the temperature. The nearest-neighbor coordination number of liquid Ge–Si alloys is close to that of pure liquid Ge and Si. The first peak of the pair distribution function moved to a shorter distance with increasing Si concentration. These results may indicate that the atomic radii of the Si and Ge atoms in the pure liquid are preserved in the liquid alloys.     

MOCVD growth of GaN on Si(1 1 1) substrates using an ALD-grown Al2O3 interlayer

GaN thin films have been grown on Si(1 1 1) substrates using an atomic layer deposition (ALD)-grown Al₂O₃ interlayer. This thin Al₂O₃ layer reduces strain in the subsequent GaN layer, leading to lower defect densities and improved material quality compared to GaN thin films grown by the same process on bare Si. XRD ω-scans showed a full width at half maximum (FWHM) of 549 arcsec for GaN grown on bare Si and a FWHM as low as 378 arcsec for GaN grown on Si using the ALD-grown Al₂O₃ interlayer. Raman spectroscopy was used to study the strain in these films in more detail, with the shift of the E₂(high) mode showing a clear dependence of strain on Al₂O₃ interlayer thickness. This dependence of strain on Al₂O₃ thickness was also observed via the redshift of the near bandedge emission in room temperature photoluminescence (RT-PL) spectroscopy. The reduction in strain results in a significant reduction in both crack density and screw dislocation density compared to similar films grown on bare Si. Screw dislocation density of the films grown on Al₂O₃/Si substrates approaches that of typical GaN layers on sapphire. This work shows great promise for the use of oxide interlayers for growth of GaN-based LEDs on Si.     

Influence of sputtering conditions on H content and SiH bonding in aSi: H alloys

The influence of sputtering conditions on H concentration and SiH bonding has been determined for the case of diode reactive sputtering of Si in ArH mixtures, and a simple model for SiH reaction kinetics has been developed. H content and SiH bonding can be varied and controlled over wide ranges by appropriate selection of sputtering conditions. SiH reaction kinetics are found to be governed primarily by deposition rate (reaction time), H partial pressure (H availability) and possibiy substrate temperature (mobility of Si and H on the surface of the growing film). H concentration increases with decreasing deposition rate and increasing H partial pressure. SiH bonding increases with increasing deposition rate and decreasing H partial pressure. Polymerization of H and Si (SiH₂, SiH₃) occurs for lowest deposition rates and highest H partial pressures. Polymerization reactions are enhanced in films deposited at very high target power densities. The high power density causes substrate temperature to be higher than expected, and the enhanced polymerization may be due to increased Si and H surface mobility at the elevated temperatures.     

Crystal growth and scintillating properties of (Pr,Si)‐doped YAlO3

This paper deals with Pr‐doped and Pr, Si‐codoped YAlO₃ single crystal growth by the micro‐pulling‐down method and investigation of their spectroscopic and scintillating properties. The Pr³⁺ 5d ‐4f radioluminescence intensity is more than 10 times higher than that of Bi₄Ge₃O₁₂ standard sample, but the Si‐codoping decreases it. Absorption spectra of as‐grown and air‐annealed Si,Pr‐codoped YAlO₃ samples show along with an onset of 4f ‐5d transition round 230 nm the induced absorption band at 400 nm which possibly related to a hole center absorption (Pr⁴⁺ or O^‐). Thermoluminescence measurements above the room temperature were performed in order to monitor deep electron traps. Strong concentration dependence of thermoluminescence was observed for Pr:YAlO₃ glow curves. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

The preferential orientation of the directionally solidified Si–TaSi2 eutectic in situ composite

The Si–TaSi₂ eutectic in situ composite is a favorable field emission material due to relatively low work function, good electron conductivity, and three-dimensional array of Schottky junctions grown in the composite spontaneously. The preferential orientation during directional solidification is determined by the growth anisotropy. In order to obtain the preferential direction of the steady-state crystal growth, the transmission electron microscopy (TEM) is used for analysis. It is found that the preferential orientation of the Si-TaSi₂ eutectic in situ composite prepared by Czochralski (CZ) technique is [3 3¯ 2¯] Si∥[0 0 0 1] TaSi₂, (2 2 0)Si∥(2 2¯ 0 0) TaSi₂. Whereas the preferential orientation of the Si–TaSi₂ eutectic in situ composite prepared by electron beam floating zone melting (EBFZM) technique is [0 1¯ 1¯ ]] Si∥[0 0 0 1] TaSi₂,(0 1¯ 1) Si∥(0 1¯ 1 1)TaSi₂. The preferential directions of the Si-TaSi₂ eutectic in situ composites prepared by two kinds of crystal growth techniques are distinctly different from each other, which results from different solid–liquid interface temperatures on account of the different crystal growth conditions, e.g. different solidification rate, different temperature gradient, different solid–liquid interface curvature and different kinetic undercooling.     

Dynamic deformation of silicon-rich V3Si single crystals at elevated temperatures

The plastic deformation behaviour of the intermetallic phase V₃Si (Cr₃Si type) was investigated under dynamic conditions. The experiments revealed that V₃Si deforms plastically at a strain rate of about 4.7 × 10⁻⁵s⁻¹ above 1200°. Flow stress depends strongly on deformation temperature and strain rate. An alloy hardening by deviation from stoichiometric composition within the range of homogeneity is observed.     

The Distribution Coefficient of Isomorphous Admixtures for KCI?KBr?H2O,K2SO4?(NH4)2SO4?H2O and KNO3?NH4 NO3?H2O Systems at 298 K

For the systems KCI KBr H₂O, K₂SO₄4-(NH₄)₂H₂O and KNO₃ NH₄NO₃ H₂ O equilibrium investigations have been performed and the distribution coefficients of isomorphous admixtures have been determined. For each solid solution the changes of the distribution coefficient D, the dependencies between the values of the real and ideal distribution coefficients and the directions of energetic changes in these systems during the co-crystallization of isomorphous and isodimorphous admixtures have been discussed.     

Distribution of aluminum and indium impurities in crystals of Ge-Si solid solutions grown from the melt

The problem regarding the distribution of aluminum and indium impurities in bulk crystals of solid solutions with a variable composition Ge_1−x Si _x (0 ≤ x ≤ 0.3) is solved in order to establish regularities of the changes in the segregation coefficients of impurities with variations in the composition of the host lattice in the germanium-silicon system. Aluminum-and indium-doped crystals of Ge_1−x Si _x (0 ≤ x ≤ 0.3) solid solutions with a silicon content decreasing along the crystallization axis are grown by a modified Bridgman method with the use of a silicon seed. The concentration distribution of impurities over the length of the crystals is determined from Hall measurements. It is demonstrated that the experimental data on the concentration distribution of impurities in the crystals are in good agreement with the results obtained from the theory according to which the equilibrium segregation coefficients of impurities vary linearly with a change in the composition of Ge-Si solid solution crystals.