Creating Zipper‐Like van der Waals Gap Discontinuity in Low‐Temperature‐Processed Nanostructured PbBi2nTe1+3n: Enhanced Phonon Scattering and Improved Thermoelectric Performance

Nanoengineered materials can embody distinct atomic structures which deviate from that of the bulk‐grain counterpart and induce significantly modified electronic structures and physical/chemical properties. The phonon structure and thermal properties, which can also be potentially modulated by the modified atomic structure in nanostructured materials, however, are seldom investigated. Employed here is a mild approach to fabricate nanostructured PbBi_2nTe_1+3n using a solution‐synthesized PbTe‐Bi₂Te₃ nano‐heterostructure as a precursor. The as‐obtained monoliths have unprecedented atomic structure, differing from that of the bulk counterpart, especially the zipper‐like van der Waals gap discontinuity and the random arrangement of septuple‐quintuple layers. These structural motifs break the lattice periodicity and coherence of phonon transport, leading to ultralow thermal conductivity and excellent thermoelectric z T.     

Bournonite PbCuSbS3: Stereochemically Active Lone‐Pair Electrons that Induce Low Thermal Conductivity

An understanding of the structural features and bonding of a particular material, and the properties these features impart on its physical characteristics, is essential in the search for new systems that are of technological interest. For several relevant applications, the design or discovery of low thermal conductivity materials is of great importance. We report on the synthesis, crystal structure, thermal conductivity, and electronic‐structure calculations of one such material, PbCuSbS₃. Our analysis is presented in terms of a comparative study with Sb₂S₃, from which PbCuSbS₃ can be derived through cation substitution. The measured low thermal conductivity of PbCuSbS₃ is explained by the distortive environment of the Pb and Sb atoms from the stereochemically active lone‐pair s² electrons and their pronounced repulsive interaction. Our investigation suggests a general approach for the design of materials for phase‐change‐memory, thermal‐barrier, thermal‐rectification and thermoelectric applications, as well as other functions for which low thermal conductivity is purposefully sought.     

Potential of Chevrel phases for thermoelectric applications

A low lattice thermal conductivity is one of the requirements to achieve high thermoelectric figures of merit. Several low thermal conductivity materials were identified and developed over the past few years at the Jet Propulsion Laboratory (JPL), including filled skutterudites and Zn₄Sb₃-based materials. A study of the mechanisms responsible for the high phonon scattering rates in these compounds has demonstrated that materials with structures that can accommodate additional atoms in their lattice are likely to possess low lattice thermal conductivity values. Chevrel phases (Mo₆Se₈-type) are just such materials and are currently being investigated at JPL for thermoelectric applications. The crystal structures of the Chevrel phases present cavities which can greatly vary in size and can contain a large variety of atoms ranging from large ones such as Pb to small ones such as Cu. In these materials, small inserted atoms usually show large thermal parameters which indicate that they move around and can significantly scatter the phonons. The electronic and thermal properties of these materials can potentially be controlled by a careful selection of the filling element(s). We have synthesized (Cu, Cu/Fe, Ti)_xMo₆Se₈ samples and report in this paper on their thermoelectric properties. Approaches to optimize the properties of these materials for thermoelectric applications are discussed. Solid State Sciences, 1293-2558/99/7-8/© 1999 Éditions scientifiques et médicales Elsevier SAS. All rights reserved.     

NaCdSb: An Orthorhombic Zintl Phase with Exceptional Intrinsic Thermoelectric Performance

Many Zintl phases are promising thermoelectric materials owning to their features like narrow band gaps, multiband behaviors, ideal charge transport tunnels, and loosely bound cations. Herein we show a new Zintl phase NaCdSb with exceptional intrinsic thermoelectric performance. Pristine NaCdSb exhibits semiconductor behaviors with an experimental hole concentration of 2.9×10¹⁸ cm⁻³ and a calculated band gap of 0.5 eV. As the temperature increases, the hole concentration rises gradually and approaches its optimal one, leading to a high power factor of 11.56 μW cm⁻¹ K⁻² at 673 K. The ultralow thermal conductivity is derived from the small phonon group velocity and short phonon lifetime, ascribed to the structural anharmonicity of Cd−Sb bonds. As a consequence, a maximum zT of 1.3 at 673 K has been achieved without any doping optimization or structural modification, demonstrating that NaCdSb is a remarkable thermoelectric compound with great potential for performance improvement.     

Excellent Room-Temperature Thermoelectricity of 2D GeP3: Mexican-Hat-Shaped Band Dispersion and Ultralow Lattice Thermal Conductivity

Although some atomically thin 2D semiconductors have been found to possess good thermoelectric performance due to the quantum confinement effect, most of their behaviors occur at a higher temperature. Searching for promising thermoelectric materials at room temperature is meaningful and challenging. Inspired by the finding of moderate band gap and high carrier mobility in monolayer GeP_3, we investigated the thermoelectric properties by using semi-classical Boltzmann transport theory and first-principles calculations. The results show that the room-temperature lattice thermal conductivity of monolayer GeP₃ is only 0.43 Wm⁻¹K⁻¹ because of the low group velocity and the strong anharmonic phonon scattering resulting from the disordered phonon vibrations with out-of-plane and in-plane directions. Simultaneously, the Mexican-hat-shaped dispersion and the orbital degeneracy of the valence bands result in a large p-type power factor. Combining this superior power factor with the ultralow lattice thermal conductivity, a high p-type thermoelectric figure of merit of 3.33 is achieved with a moderate carrier concentration at 300 K. The present work highlights the potential applications of 2D GeP₃ as an excellent room-temperature thermoelectric material.     

Facile Synthesis and Thermoelectric Properties of Self‐assembled Bi2Te3 One‐Dimensional Nanorod Bundles

Self‐assembled Bi₂Te₃ one‐dimensional nanorod bundles have been fabricated by a low‐cost and facile solvothermal method with ethylene diamine tetraacetic acid as an additive. The phase structures and morphologies of the samples were characterized by X‐ray diffraction, scanning electron microscopy, Fourier‐transform infrared spectrometry, and transmission electron microscope measurements. The growth mechanisms have been proposed based on the experimental results. The full thermoelectric properties of the nanorod bundles have been characterized and show a large improvement in the thermal conductivity attributed to phonon scattering of the nanostructures and then enhance the thermoelectric figure of merit. This work is promising for the realization of new types of highly efficient thermoelectric semiconductors by this method.     

Few‐Layer Nanosheets of n‐Type SnSe2

Layered p‐block metal chalcogenides are renowned for thermoelectric energy conversion due to their low thermal conductivity caused by bonding asymmetry and anharmonicity. Recently, single crystalline layered SnSe has created sensation in thermoelectrics due to its ultralow thermal conductivity and high thermoelectric figure of merit. Tin diselenide (SnSe₂), an additional layered compound belonging to the Sn‐Se phase diagram, possesses a CdI₂‐type structure. However, synthesis of pure‐phase bulk SnSe₂ by a conventional solid‐state route is still remains challenging. A simple solution‐based low‐temperature synthesis is presented of ultrathin (3–5 nm) few layers (4–6 layers) nanosheets of Cl‐doped SnSe₂, which possess n‐type carrier concentration of 2×10¹⁸ cm^?3 with carrier mobility of about 30 cm² V^?1 s^?1 at room temperature. SnSe₂ has a band gap of about 1.6 eV and semiconducting electronic transport in the 300–630 K range. An ultralow thermal conductivity of about 0.67 Wm^?1 K^?1 was achieved at room temperature in a hot‐pressed dense pellet of Cl‐doped SnSe₂ nanosheets due to the anisotropic layered structure, which gives rise to effective phonon scattering.     

Electrodeposition of Ni and Te‐doped Cobalt Triantimonide in Citrate Solutions

Skutterudite compounds form a new class of potential candidates for thermoelectric applications. Cobalt triantimonide (CoSb₃) shows good thermoelectric properties at medium and high temperatures. Doping this system with substitution elements, for either Co or Sb or both, may result in an increase of the thermoelectric figure of merit (ZT). This work focused on the electrochemical doping and characterization of films and nanowires of Co‐Sb system in citrate solutions using gold‐coated PCTE templates. The electrodeposition was performed on gold surface that was pre‐treated electrochemically to ensure reproducible results. The electrochemical treatment acted as an annealing process for the surface, which resulted in an increase in Au(111) as demonstrated by XRD. Detailed electrochemical studies including deposition‐stripping experiments was performed in order to develop a better understanding of the co‐deposition kinetics and a better control over the composition of doped Co‐Sb system. Scanning electron microscopy (SEM/EDS) helped study the morphology and the composition of the doped and undoped Co‐Sb system. Co‐deposition of Co‐Sb showed that the amount of Co is higher in nanowires than in film or mushroom caps due to the slow Sb deposition rate dictated by slow Sb(III) complex diffusion. Doped nanowires have been also obtained. Both Ni and Te electrochemical doping of the Co‐Sb system affected the composition of the deposit but there was no effect on nanowire morphology.     

Concerted Rattling in CsAg5Te3 Leading to Ultralow Thermal Conductivity and High Thermoelectric Performance

Thermoelectric (TE) materials convert heat energy directly into electricity, and introducing new materials with high conversion efficiency is a great challenge because of the rare combination of interdependent electrical and thermal transport properties required to be present in a single material. The TE efficiency is defined by the figure of merit ZT=(S²σ) T/κ, where S is the Seebeck coefficient, σ is the electrical conductivity, κ is the total thermal conductivity, and T is the absolute temperature. A new p‐type thermoelectric material, CsAg₅Te₃, is presented that exhibits ultralow lattice thermal conductivity (ca. 0.18 Wm^?1 K^?1) and a high figure of merit of about 1.5 at 727 K. The lattice thermal conductivity is the lowest among state‐of‐the‐art thermoelectrics; it is attributed to a previously unrecognized phonon scattering mechanism that involves the concerted rattling of a group of Ag ions that strongly raises the Grüneisen parameters of the material.     

Influence of a nano phase segregation on the thermoelectric properties of the p-type doped stannite compound Cu(2+x)Zn(1-x)GeSe4

Engineering nanostructure in bulk thermoelectric materials has recently been established as an effective approach to scatter phonons, reducing the phonon mean free path, without simultaneously decreasing the electron mean free path for an improvement of the performance of thermoelectric materials. Herein the synthesis, phase stability, and thermoelectric properties of the solid solutions Cu(2+x)Zn(1-x)GeSe(4) (x = 0-0.1) are reported. The substitution of Zn(2+) with Cu(+) introduces holes as charge carriers in the system and results in an enhancement of the thermoelectric efficiency. Nano-sized impurities formed via phase segregation at higher dopant contents have been identified and are located at the grain boundaries of the material. The impurities lead to enhanced phonon scattering, a significant reduction in lattice thermal conductivity, and therefore an increase in the thermoelectric figure of merit in these materials. This study also reveals the existence of an insulator-to-metal transition at 450 K.     

TiS2原子薄膜厚度对其热电性质影响的理论研究

本文采用玻尓兹曼输运方程与密度泛函计算相结合的方法,理论研究了薄膜厚度对二维TiS₂原子薄膜热电性能的影响。随着厚度的减小,薄膜的能带变平,电子有效质量增大而群速度减小,这造成了塞贝克系数的增大和电导率的减小。而且,薄膜的功率因子及最优载流子浓度也随厚度的减小而减小。我们讨论了薄膜功率因子减小的物理机制,并与其他二维体系的实验结果进行了比较分析。     

TiS_2原子薄膜厚度对其热电性质影响的理论研究

本文采用玻尓兹曼输运方程与密度泛函计算相结合的方法,理论研究了薄膜厚度对二维TiS2原子薄膜热电性能的影响。随着厚度的减小,薄膜的能带变平,电子有效质量增大而群速度减小,这造成了塞贝克系数的增大和电导率的减小。而且,薄膜的功率因子及最优载流子浓度也随厚度的减小而减小。我们讨论了薄膜功率因子减小的物理机制,并与其他二维体系的实验结果进行了比较分析。     

Thermoelectric properties of quaternary Uranium chalcogenides Cs2Pt3US6 and Cs2Pt3USe6

Electronic and thermoelectric behaviors of Cs₂Pt₃US₆ and Cs₂Pt₃USe₆ compounds have been revealed in the present work. The calculations have been performed with the help of full potential linearized augmented plane wave method (FP-LAPW). Engel–Vosko generalize gradient approximation was used for the exchange correlation energy. Thermoelectric properties were deal with generalized BoltzTraP program. Band structure calculation resulted in metallic nature of the materials. Calculated Fermi surfaces have been found to consist of two sheets. Bonding characteristics have studied with the help of electron charge density in (1 1 0) crystallographic plane. Seebeck coefficient, electric conductivity, power factor, figure of merit and thermal conductivity has been calculated.     

Influence of Ni nanoparticle addition and spark plasma sintering on the TiNiSn–Ni system: Structure,microstructure, and thermoelectric properties

The electronic and thermal properties of thermoelectric materials are highly dependent on their microstructure and therefore on the preparation conditions, including the initial synthesis and, if applicable, densification of the obtained powders. Introduction of secondary phases on the nano- and/or microscale is widely used to improve the thermoelectric figure of merit by reduction of the thermal conductivity. In order to understand the effect of the preparation technique on structure and properties, we have studied the thermoelectric properties of the well-known half-Heusler TiNiSn with addition of a small amount of nickel nanoparticles. The different parameters are the initial synthesis (levitation melting and microwave heating), the amount of nickel nanoparticles added and the exact pressing profile using spark plasma sintering. The resulting materials have been characterized by synchrotron X-ray diffraction and microprobe measurements and their thermoelectric properties are investigated. We found the lowest (lattice) thermal conductivity in samples with full-Heusler TiNi₂Sn and Ni₃Sn₄ as secondary phases.     

New and Old Concepts in Thermoelectric Materials

Herein we cover the key concepts in the field of thermoelectric materials research, present the current understanding, and show the latest developments. Current research is aimed at increasing the thermoelectric figure of merit (ZT) by maximizing the power factor and/or minimizing the thermal conductivity. Attempts at maximizing the power factor include the development of new materials, optimization of existing materials by doping, and the exploration of nanoscale materials. The minimization of the thermal conductivity can come through solid‐solution alloying, use of materials with intrinsically low thermal conductivity, and nanostructuring. Herein we describe the most promising bulk materials with emphasis on results from the last decade. Single‐phase bulk materials are discussed in terms of chemistry, crystal structure, physical properties, and optimization of thermoelectric performance. The new opportunities for enhanced performance bulk nanostructured composite materials are examined and a look into the not so distant future is attempted.     

Highly Porous Thermoelectric Nanocomposites with Low Thermal Conductivity and High Figure of Merit from Large‐Scale Solution‐Synthesized Bi2Te2.5Se0.5 Hollow Nanostructures

To enhance the performance of thermoelectric materials and enable access to their widespread applications, it is beneficial yet challenging to synthesize hollow nanostructures in large quantities, with high porosity, low thermal conductivity (κ ) and excellent figure of merit (z T ). Herein we report a scalable (ca. 11.0 g per batch) and low‐temperature colloidal processing route for Bi₂Te_2.5Se_0.5 hollow nanostructures. They are sintered into porous, bulk nanocomposites (phi 10 mm×h 10 mm) with low κ (0.48 W m⁻¹ K⁻¹) and the highest z T (1.18) among state‐of‐the‐art Bi₂Te_3−x Se_x materilas. Additional benefits of the unprecedented low relative density (68–77 %) are the large demand reduction of raw materials and the improved portability. This method can be adopted to fabricate other porous phase‐transition and thermoelectric chalcogenide materials and will pave the way for the implementation of hollow nanostructures in other fields.     

p-Type thermoelectric properties of the oxygen-deficient perovskite Ca2Fe2O5 in the brownmillerite structure

Brownmillerite calcium ferrite was synthesized in air at 1573 K and thermoelectric properties (direct current electrical conductivity σ, Seebeck coefficient α, thermal conductivity κ, thermal expansion α_L) were measured from 373 to 1050 K in air. Seebeck coefficient was positive over all temperatures indicating conduction by holes, and electrical properties were continuous through the Pnma-Imma phase transition. Based on the thermopower and conductivity activation energies as well as estimated mobility, polaron hopping conduction was found to dominate charge transport. The low electrical conductivity, <1 S/cm, limits the power factor (α²σ), and thus the figure of merit for thermoelectric applications. The thermal conductivity values of ∼2 W/mK and their similarity to Ruddlesden-Popper phase implies the potential of the alternating tetrahedral and octahedral layers to limit phonon propagation through brownmillerite structures. Bulk linear coefficient of thermal expansion (∼14×10⁻⁶ K⁻¹) was calculated from volume data based on high-temperature in situ X-ray powder diffraction, and shows the greatest expansion perpendicular to the alternating layers.     

Soft Phonon Modes Leading to Ultralow Thermal Conductivity and High Thermoelectric Performance in AgCuTe

Crystalline solids with intrinsically low lattice thermal conductivity (κ_L) are crucial to realizing high‐performance thermoelectric (TE) materials. Herein, we show an ultralow κ_L of 0.35 Wm^?1 K^?1 in AgCuTe, which has a remarkable TE figure‐of‐merit, zT of 1.6 at 670 K when alloyed with 10 mol % Se. First‐principles DFT calculation reveals several soft phonon modes in its room‐temperature hexagonal phase, which are also evident from low‐temperature heat‐capacity measurement. These phonon modes, dominated by Ag vibrations, soften further with temperature giving a dynamic cation disorder and driving the superionic transition. Intrinsic factors cause an ultralow κ_L in the room‐temperature hexagonal phase, while the dynamic disorder of Ag/Cu cations leads to reduced phonon frequencies and mean free paths in the high‐temperature rocksalt phase. Despite the cation disorder at elevated temperatures, the crystalline conduits of the rigid anion sublattice give a high power factor.     

Why does the electrical conductivity in PEDOT:PSS decrease with PSS content? A study combining thermoelectric measurements with impedance spectroscopy

We have investigated the electrical transport properties of poly(3,4‐ethylenedioxythiophen)/poly(4‐styrene‐sulfonate) (PEDOT:PSS) with PEDOT‐to‐PSS ratios from 1:1 to 1:30. By combining impedance spectroscopy with thermoelectric measurements, we are able to independently determine the variation of electrical conductivity and charge carrier density with PSS content. We find the charge carrier density to be independent of the PSS content. Using a generalized effective media theory, we show that the electrical conductivity in PEDOT:PSS can be understood as percolation between sites of highly conducting PEDOT:PSS complexes with a conductivity of 2.3 (Ωcm)^?1 in a matrix of excess PSS with a low conductivity of 10^?3 (Ω cm)^?1. In addition to the transport properties, the thermoelectric power factors and Seebeck coefficients have been determined. © 2012 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2012     

The influence of co-doping Ag and Sb on microstructure and thermoelectric properties of PbTe prepared by combining hydrothermal synthesis and melting

Ag and Sb co-doped PbTe (AgPb₁₈SbTe₂₀) and pure PbTe nanopowders were hydrothermally synthesized. The synthesized nanopowders were heated at 1173-1223 K in vacuum for 5 h followed by a slow cooling. The nanopowders and the bulk samples were characterized by X-ray diffraction and electron microscopy, respectively. Electrical transport properties of the bulk samples were measured from room temperature to ∼773 K. The results showed that co-doping Ag and Sb into PbTe has significant effects on both the nanopowders and bulk samples. Bulk AgPb₁₈SbTe₂₀ sample showed n-type conduction in the whole temperature range measured, while bulk PbTe sample exhibited a transition from p- to n-type conduction at ∼500 K. The thermoelectric properties of PbTe were markedly improved after co-doping of Ag and Sb. The AgPb₁₈SbTe₂₀ sample has a dimensionless figure of merit of ∼0.94 at 723 K.