Effect of annealing on the surface and band gap alignment of CdZnS thin films

Effects of the annealing temperature on structural, optical and surface properties of chemically deposited cadmium zinc sulfide (CdZnS) films were investigated. X-ray diffraction (XRD) results showed that the grown CdZnS thin films formed were polycrystalline with hexagonal structure. Atomic force microscopy (AFM) studies showed that the surface roughness of the CdZnS thin films was about 60-400 nm. Grain sizes of the CdZnS thin films varied between 70 and 300 nm as a function of annealing temperature. The root mean square surface roughness of the selected area, particular point, average roughness profile, topographical area of roughness were measured using the reported AFM software. The band gaps of CdZnS thin films were determined from absorbance measurements in the visible range as 300 nm and 1100 nm, respectively, using Tauc theory.     

Unraveling the ultralow threshold stimulated emission from CdZnS/ZnS quantum dot and enabling high‐Q microlasers

The newly engineered ternary CdZnS/ZnS colloidal quantum dots (CQDs) are found to exhibit remarkably high photoluminescence quantum yield and excellent optical gain properties. However, the underlying mechanisms, which could offer the guidelines for devising CQDs for optimized photonic devices, remain undisclosed. In this work, through comprehensive steady‐state and time‐resolved spectroscopy studies on a series of CdZnS‐based CQDs, we unambiguously clarify that CdZnS‐based CQDs are inherently superior optical gain media in the blue spectral range due to the slow Auger process and that the ultralow threshold stimulated emission is enabled by surface/interface engineering. Furthermore, external cavity‐free high‐Q quasitoroid microlasers were produced from self‐assembly of CdZnS/ZnS CQDs by facile inkjet printing technique. Detailed spectroscopy analysis confirms the whispering gallery mode lasing mechanism of the quasitoroid microlasers. This tempting microlaser fabrication method should be applicable to other solution‐processed gain materials, which could trigger broad research interests.

     

Electronic relaxation of deep bulk trap and interface state in ZnO ceramics

This paper investigates the electronic relaxation of deep bulk trap and interface state in ZnO ceramics based on dielectric spectra measured in a wide range of temperature, frequency and bias, in addition to the steady state response. It discusses the nature of net current flowing over the barrier affected by interface state, and then obtains temperature-dependent barrier height by approximate calculation from steady I--V (current--voltage) characteristics. Additional conductance and capacitance arising from deep bulk trap relaxation are calculated based on the displacement of the cross point between deep bulk trap and Fermi level under small AC signal. From the resonances due to deep bulk trap relaxation on dielectric spectra, the activation energies are obtained as 0.22 eV and 0.35 eV, which are consistent with the electronic levels of the main defect interstitial Zn and vacancy oxygen in the depletion layer. Under moderate bias, another resonance due to interface relaxation is shown on the dielectric spectra. The DC-like conductance is also observed in high temperature region on dielectric spectra, and the activation energy is much smaller than the barrier height in steady state condition, which is attributed to the displacement current coming from the shallow bulk trap relaxation or other factors.     

Magnetic lines of force in a Tornado trap

Numerical methods are used to analyze the structure of the magnetic field of an ideal Tornado trap; i.e., a trap consisting of linear currents whose magnitude and location in space are such as to produce a spherical separatrix with a radius η _c between the helices of the trap and partition the magnetic field into two regions so that the lines of force from the working volume η<η _c do not pass beyond its boundary. It is found that the magnetic lines of force of the working volume form a series of regions, each with its own properties, and do not penetrate from one region to another. In particular, one of the regions is a layer of magnetic toroidal surfaces adjacent to the inner surface of the separatrix. Zh. Tekh. Fiz. 67, 30–34 (January 1997)     

Optical probing of Eu ions confined in an RF trap

The Eu ions confined in an RF quadrupole trap, has been optically detected. Using a tunable dye laser which is pumped by a Nd-YAG pulsed laser system, the resonance ⁹S₄^9S_4–6p _3/2, J = 5 transition of the Eu ions have been excited and the resulting fluorescence to the metastable ⁹D_4-6^9D_{4-6} state has been detected. In preparation to determine the ground-state hyperfine splitting of the odd isotopes we found the optimum trapping operating point. We have also observed a number of instabilities inside the region of the stability for an ideal trap. These non-linear resonances arise from higher-order contributions to the ideal quadrupole potential.     

Magnetic field tomography

Neutral atoms may be trapped via the interaction of their magnetic dipole moment with magnetic field gradients. One of the possible schemes is the cloverleaf trap. It is often desirable to have at hand a fast and precise technique for measuring the magnetic field distribution. We use for instantaneous imaging the equipotential lines of the magnetic field a diagnostic tool which is based on spatially resolved observation of the fluorescence emitted by a hot beam of sodium atoms crossing a thin slice of resonant laser light within the magnetic field region to be investigated. The inhomogeneous magnetic field spatially modulates the resonance condition between the Zeeman-shifted hyperfine sublevels and the laser light and therefore the amount of scattered photons. We apply this technique for mapping the field of our cloverleaf trap in three dimensions under various conditions. Received 20 March 2001 and Received in final form 12 May 2001     

Recent Progress with the SMILETRAP Penning Mass Spectrometer

The Penning trap mass spectrometer SMILETRAP has been considerably improved during the last two years. The helium pressure has been carefully stabilized and is now independent of irregular air pressure. The temperature of the hyperboloidal precision trap is stabilized to ±0.03°C. Remaining temperature instabilities are compensated by changes in the current of a warm coil surrounding the precision trap. The frequency synthesizer is now locked to GPS. This means that it is much easier to accurately measure resonances during several days. The improvements have demonstrated that in mass doublet measurements with an excitation time of 1 s it is possible to determine the mass of ions with q/A=1/2 at an uncertainty to a few times of 0.1 ppb, using selected rather than cooled ions. In routine measurements lasting for one day it is possible to reach a mass uncertainty of 1 ppb. The masses of the following particles and atoms have been measured with uncertainties in the region 0.3–2 ppb: p, ³H, ³He, ⁴He, ²²Ne, ²⁸Si, ³⁶Ar, ⁷⁶Ge, ⁷⁶Se, ⁸⁶Kr and ¹³³Cs. It has also been shown that though we are using a warm bore the trap pressure is sufficiently low to prevent electron capture from the rest gas for excitation times of 3 s and for ion charges as high as 50+. This revised version was published online in July 2006 with corrections to the Cover Date.     

Trap centers in Au-implanted MOS structures

Trap centers in the Si-SiO₂ interface region of MOS structures doped by ion implantation of gold have been investigated using constant capacitance deep level transient spectroscopy (CC-DLTS). Gold doses of 10¹²–3 × 10¹³ cm^–2 were implanted into the back surface of the wafers and were then redistributed during a diffusion anneal for 30 min at 1100° or 900° C. Three Au-related trap levels have been observed in the interface region, which were attributed to the Au-donor (E _v +0.35 eV), the Au-acceptor (E _v +0.53 eV), and the Au-Fe complex (E _v +0.45 eV). The trap concentration profiles show that the Si-SiO₂ interface affects the Au concentration in a depth range of 1 m from the interface and that gettering of Au occurs at the interface. The interface state density is independent of the Au concentration at the interface even for concentrations of 10¹⁵ cm^–3.     

Investigation of sub-Doppler cooling effects in a cesium magneto-optical trap

We present an investigation of sub-Doppler effects in a cesium magneto-optical trap. First, a simple one-dimensional theoretical model of the trap is developed for aJ _g = 1 J _e = 2 transition. This model predicts the size of the trapped atom cloud and temperature as a function of laser intensity and detuning. In the limit of small magnetic field gradients, the trap temperature is found to be equal to the molasses temperature and a minimum size for the trap is calculated. We then describe several experiments performed in a three-dimensional cesium trap to measure the trap parameters, spring constant, friction coefficient, temperature and density. Whilst the temperature of the trapped atoms is found to be equal to the molasses temperature, in agreement with theory, the trap spring constant is found to be two orders of magnitude smaller than the one-dimensional prediction, a value close to that predicted by Doppler models. The maximum density is found to be on the order of 10¹² atoms/cm³ or one atom per optical wavelength on average. When the number of trapped atoms becomes large, the temperature begins to increase dramatically. This excess temperature depends in a very simple way on the atom number, laser intensity and detuning, suggesting that its origin lies in multiple photon scattering within the trap.     

Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels

The space charge analysis within depletion layers in semiconductors containing deep trap levels is reconsidered. A simple approach to the frequency dependence of the admittance ofp ⁺/n junctions is properly generalized in order to deal with the effect of interface states at heterojunctions and Schottky barriers, as well as with a special case for the space distribution of the trap density. The density of interface states atp-Ge/CdS heterojunctions is so derived. Approximate analytical solutions accounting for a spatially distributed time constant are obtained for the admittance ofp ⁺/n junctions with a single trap state. A comparison with experimental data is given and discussed.     

Fermi气体在势阱中的最大囚禁范围与状态方程

在Thomas-Fermi近似条件下,研究了n维广义幂律势阱中Fermi原子气体的最大囚禁范围,给出了n维势阱中气体的实际囚禁体积,导出了状态方程.结果表明,最大囚禁范围和囚禁气体压强不仅与势阱性质有关,也与自由理想Fermi系统的化学势有关.对三维球对称简谐势阱进行了应用,表明在Thomas-Fermi近似有效的前提下,当系统满足条件((kT)/(hω))² ((16π²g)/ 关键词： Fermi气体 n维势阱')" href="#">n维势阱 最大囚禁范围 状态方程     

A controllable double-well optical trap for cold atoms (or molecules) using a binary <Emphasis Type="Italic">π</Emphasis>-phase plate: experimental demonstration and Monte Carlo simulation

We experimentally demonstrate a practical scheme to form a controllable double-well optical dipole trap for cold atoms (or cold molecules), and give some experimental results as well as the fabrication method of a binary π-phase plate. The dependence of the double-well characteristics on the phase etching error of the π-phase plate and the evolution of the double-well optical trap from two wells to a single one are studied both theoretically and experimentally, and the experimental results are consistent with the theoretical prediction. Furthermore, the dynamic process of loading and splitting of cold ⁸⁷Rb atoms from a standard magneto-optical trap (MOT) into our controllable double-well one are studied by Monte Carlo simulations. Our study shows that the loading efficiency of cold atoms from the standard MOT into our single-well trap can reach 100%, and the relative atomic density will be reduced from 1.0 to ∼0.5 during the evolution of our double-well trap, in which the temperature of cold atoms is reduced from 20 μK to ∼15 μK. In final, some potential applications of our controllable double-well optical trap in atom and molecule optics are briefly discussed.     

Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis

This paper reports fluorine plasma treatment enhancement-mode HEMTs (high electronic mobility transistors) EHEMTs and conventional depletion-mode HEMTs DHEMTs fabricated on one wafer using separate litho-photography technology. It finds that fluorine plasma etches the AlGaN at a slow rate by capacitance--voltage measurement. Using capacitance--frequency measurement, it finds one type of trap in conventional DHEMTs with τ_T=(0.5-6) ms and D_T= (1 - 5) × 10¹³ cm^-2·eV^-1. Two types of trap are found in fluorine plasma treatment EHEMTs, fast with τ_T(f)=(0.2-2) μs and slow with τ_T(s)=(0.5-6) ms. The density of trap states evaluated on the EHEMTs is D_T(f)=(1 - 3) × 10¹² cm^-2·eV^-1 and D_T(s)=(2 - 6) × 10¹² cm^-2·eV^-1 for the fast and slow traps, respectively. The result shows that the fluorine plasma treatment reduces the slow trap density by about one order, but introduces a new type of fast trap. The slow trap is suggested to be a surface trap, related to the gate leakage current.     

Modeling interface trapping effect in organic field-effect transistor under illumination

Organic field-effect transistors (OFETs) have received significant attention recently because of the potential application in low-cost flexible electronics. The physics behind their operation are relatively complex and require careful consideration particularly with respect to the effect of charge trapping at the insulator–semiconductor interface and field effect in a region with a thickness of a few molecular layers. Recent studies have shown that the so-called “onset” voltage (V _onset) in the rubrene OFET can vary significantly depending on past illumination and bias history. It is therefore important to define the role of the interface trap states in more concrete terms and show how they may affect device performance. In this work, we propose an equivalent-circuit model for the OFET to include mechanism(s) linked to trapping. This includes the existence of a light-sensitive “resistor” controlling charge flow into/out of the interface trap states. Based on the proposed equivalent-circuit model, an analytical expression of V _onset is derived showing how it can depend on gate bias and illumination. Using data from the literature, we analyzed the I–V characteristics of a rubrene OFET after pulsed illumination and a tetracene OFET during steady-state illumination.     

Isothermal capacitance transient spectroscopy (ICTS) study for midgap levels in Hb-GaAs by rapid thermal annealing

We studied the midgap levels by using isothermal capacitance transient spectroscopy (ICTS) in Hb-GaAs which had been processed by rapid thermal annealing (RTA). As the annealing time at 850 °C increased, the EL2 trap (E _c–0.81 eV) was transformed to the EX2 trap (E _c–0.73 eV) and eventually to the EX1 trap (E _c–0.87 eV). The diffusivity of the EL2 trap obtained from the experimental result of the heat treatment was about 1.02·10^–8cm²/s at 850 °C. This result indicate that the EL2 trap contains an interstitial arsenic atom. The result of the transformation to the EX1 and EX2 traps suggests that, when the EL2 trap is V_AsAS_iV_GaAs_Ga, the EX2 trap may be V_AsV_GaAs_Ga, which As_i is diffused out during a thermal annealing.     

Trap-size scaling of finite Bose systems within an exact canonical ensemble

Based on an exact canonical partition function, we investigate the trap-size scaling for ideal Bose gases with a finite number of particles N confined in a cubic box or in a harmonic trap. We study the trap-size scaling behaviors of condensate fraction 〈n₀〉/N and specific heat C_N around the transition temperature T_c (i.e., t = T/T_c − 1 → 0) for the three different traps, where a trap exponent θ in dependence of the trapping potential and the universality class of transition are introduced. In the box trap with periodic and Dirichlet boundary conditions, where θ → 1, we find that the scaling functions governing the various critical behaviors are universal but respective of the boundary conditions. The calculated critical exponents are in nice agreement with analytical scaling predictions. The borders of universality validity are obtained numerically. In the case of the harmonic trap, the critical behavior of the system is also found to be universal, and the trap exponent is obtained as θ ? 0.068.     

Bose-Einstein condensates with vortices in rotating traps

We investigate minimal energy solutions with vortices for an interacting Bose-Einstein condensate in a rotating trap. The atoms are strongly confined along the axis of rotation z, leading to an effective 2D situation in the x-y plane. We first use a simple numerical algorithm converging to local minima of energy. Inspired by the numerical results we present a variational ansatz in the regime where the interaction energy per particle is stronger than the quantum of vibration in the harmonic trap in the x-y plane, the so-called Thomas-Fermi regime. This ansatz allows an easy calculation of the energy of the vortices as function of the rotation frequency of the trap; it gives a physical understanding of the stabilisation of vortices by rotation of the trap and of the spatial arrangement of vortex cores. We also present analytical results concerning the possibility of detecting vortices by a time-of-flight measurement or by interference effects. In the final section we give numerical results for a 3D configuration. Received 16 December 1998 and Received in final form 18 March 1999     

Evolution of displacement cascades in Fe–Cr structures with different [001] tilt grain boundaries

Reduced-activation ferritic/martensitic steels of Cr concentration between 2.25 and 12?wt% are candidate structural materials for next-generation nuclear reactors. In this study, molecular dynamics (MD) simulation is used to generate the displacement cascades in Fe–Cr structures with different Cr concentrations by using different primary knock-on atom (PKA) energies between 2 and 10?keV. A concentration-dependent model potential has been used to describe the interactions between Fe and Cr. Single crystals (SCs) of three different coordinate bases (e.g. [310], [510], and [530]) and bi-crystal (BC) structures with three different [001] tilt grain boundaries (GBs) (e.g. Σ5, Σ13, and Σ17) have been simulated. The Wigner–Seitz cell criterion has been used to identify the produced Frenkel pairs. The results show a marked difference between collisions observed in SCs and those in BC structures. The numbers of vacancies and interstitials are found to be significantly higher in BC structures than those found in SCs. The number of point defects exhibits a power relationship with the PKA energies; however, the Cr concentration does not seem to have any influence on the number of survived point defects. In BC models, a large fraction of the total survived point defects (between 59% and 93%) tends accumulate at the GBs, which seem to trap the generated point defects. The BC structure with Σ17?GB is found to trap more defects than Σ5 and Σ13?GBs. The defect trapping is found to be dictated by the crystallographic parameters of the GBs. For all studied GBs, self-interstitial atoms (SIAs) are easily trapped within the GB region than vacancies. An analysis of defect composition reveals an enrichment of Cr in SIAs, and in BC cases, more than half of the Cr-SIAs are found to be located within the GB region.     

A wire trap for neutral atoms

We present new ways of trapping a neutral atom with static electric and magnetic fields. We discuss the interaction of a neutral atom with the magnetic field of a current carrying wire and the electric field of a charged wire. Atoms can be trapped by the 1/r magnetic field of a current-carrying wire in a two-dimensional trap. The atoms move in Kepler-like orbits around the wire and angular momentum prevents them from being absorbed at the wire. Trapping was demonstrated in an experiment by guiding atoms along a 1 m long current-carrying wire. Stable traps using the interaction of a polarizable atom with the electric field of a charged wire alone are not possible because of the 1/r ² form of the interaction potential. Nevertheless, we show that one can build a microscopic trap with a combination of a magnetic field generated by a current in a straight wire and the static electric field generated by a concentric charged ring which provides the longitudinal confinement. In all of these traps, the neutral atoms are trapped in a region of maximal field, in theirhigh-field seeking state.Dedicated to H. Walther on the occasion of his 60th birthday     

A study of deformation-produced deep levels inn-GaAs using deep level transient capacitance spectroscopy

Deformation-produced deep levels, both of electron and hole traps, have been studied using deep level transient capacitance spectroscopy (DLTS) for an undopedn-type GaAs (HB grown) compressed at 440°C. Concentrations of two grown-in electron trap levels (E _c −0.65eV andE _c −0.74eV) and one grown-in hole trap level (E _v +∼0.4eV) increase with plastic deformation, while that of a grown-in electron trap level (E _c −∼0.3eV) decreases in an early stage of deformation. While no new peak appeared in the electron trap DLTS spectrum after plastic deformation, in the hole trap DLTS spectrum a broad spectrum, seemingly composed of many peaks, newly appeared in a middle temperature range, which may be attributed to electronic energy levels of dislocations with various characters.