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1.
A. Santoni U.B. Vetrella G. Celentano U. Gambardella A. Mancini 《Applied Physics A: Materials Science & Processing》2007,86(4):485-490
Superconducting MgB2 films were obtained by in-situ annealing of precursor multilayers deposited at low substrate temperature by sputtering from
a MgB2 stoichiometric target and by thermal evaporation of pure Mg. After an in-situ annealing at 500–600 °C, the films showed a
zero resistance critical temperature up to 31 K. The as-obtained MgB2 films were investigated by X-ray photoelectron spectroscopy (XPS) and X-ray auger electron spectroscopy (XAES). The electronic
structure was studied by monitoring the B 1s, Mg 2p, O 1s core-levels and the Mg KL2L3 Auger line. For comparison, the electronic structure of an MgB2 commercial superconducting sputtering target, of a not-annealed precursor film and of a sample obtained by direct sputtering
from the MgB2 target have also been investigated. Electron spectroscopy showed that in the superconducting systems the Mg KL2L3 Auger line kinetic energy position is always higher by about 0.9 eV with respect to the energy position of the same Auger
line measured in the non-superconducting samples.
PACS 74.25Jb; 74.78.Bz; 74.70.Ad 相似文献
2.
The photovoltaic characteristics of a photoelectrochemical cell of ITO/TiO2/PVC-LiClO4/graphite are reported. This paper is concerned with the influence of light intensity and temperature on short-circuit current
density, Jsc and open-circuit voltage, Voc of the device. The photoelectrochemical cell material was a screen-printed layer of titanium dioxide onto an ITO-covered
glass substrate, which was used as a working electrode of the cell. The solid electrolyte was polivinylchloride-lithium perchlorate.
The graphite film serves as a counter electrode of the cell. The current density–voltage characteristics of the device under
an illumination of 20, 40, 60, 80 and 100 mW cm−2 light from a tungsten halogen lamp were recorded at 40 °C as well as under an illumination of 100 mW cm−2 at 30, 35, 40, 45 and 50 °C, respectively. It was found that the short-circuit current density, Jsc of the device increases with both light intensity and temperature. The Jsc obtained at 100 mW cm−2 was 1.0 μAcm−2 and that at 50 °C was 0.7 μAcm−2. 相似文献
3.
V. P.S. Awana A. Vajpayee M. Mudgel V. Ganesan A. M. Awasthi G. L. Bhalla H. Kishan 《The European Physical Journal B - Condensed Matter and Complex Systems》2008,62(3):281-294
We report synthesis, structure/micro-structure, resistivity under magnetic
field [ρ(T)H], Raman spectra, thermoelectric power S(T), thermal conductivity
κ(T), and magnetization of ambient pressure argon annealed
polycrystalline bulk samples of MgB2, processed under identical
conditions. The compound crystallizes in hexagonal structure with space
group P6/mmm. Transmission electron microscopy (TEM) reveals electron micrographs
showing various types of defect features along with the presence of 3–4 nm
thick amorphous layers forming the grain boundaries of otherwise crystalline
MgB2. Raman spectra of the compound at room temperature exhibited
characteristic phonon peak at 600 cm-1. Superconductivity is observed
at 37.2 K by magnetic susceptibility χ(T), resistivity ρ(T), thermoelectric power
S(T), and thermal conductivity κ(T) measurements. The power law fitting
of ρ(T) give rise to Debye temperature (ΘD) at 1400 K which is
found consistent with the theoretical fitting of S(T), exhibiting Θ
D of 1410 K and carrier density of 3.81 × 1028/m3. Thermal
conductivity κ(T) shows a jump at 38 K, i.e., at Tc, which was
missing in some earlier reports. Critical current density (Jc) of up to
105 A/cm2 in 1–2 T (Tesla) fields at temperatures (T) of up to 10 K
is seen from magnetization measurements. The irreversibility field, defined
as the field related to merging of M(H) loops is found to be 78, 68 and 42 kOe
at 4, 10 and 20 K respectively. The superconducting performance parameters
viz. irreversibility field (Hirr) and critical current density
Jc(H) of the studied MgB2 are improved profoundly with addition of
nano-SiC and nano-diamond. The physical property parameters measured for
polycrystalline MgB2 are compared with earlier reports and a
consolidated insight of various physical properties is presented. 相似文献
4.
MgB2 coated conductors (CCs), which can avoid the low packing density problem of powder-in-tube (PIT) processed wires, can be a realistic solution for practical engineering applications. Here we report on the superior superconducting properties of MgB2 CCs grown directly on the flexible metallic Hastelloy tapes without any buffer layer at various deposition temperatures from 520 to 600 °C by using hybrid physical–chemical vapor deposition (HPCVD) technique. The superconducting transition temperatures (Tc) are in the range of 38.5–39.4 K, comparable to bulk samples and high quality thin films. Clear (101) and (002) reflection peaks of MgB2 are observed in the X-ray diffraction patterns without any indication of chemical reaction between MgB2 and Hastelloy tapes. From scanning electron microscopy, it was found that connection between MgB2 grains and voids strongly depend on the growth temperature. A systematic increase in the flux pinning force density and thereby the critical current density with decreasing growth temperature was observed for the MgB2 CCs. The critical current density (Jc) of Jc(5 K, 0 T) ~107 A/cm2 and Jc(5 K, 2.5 T) ~105 A/cm2 has been obtained for the sample fabricated at a low growth temperature of 520 °C. The enhanced Jc (H) behavior can be understood on the basis of the variation in the microstructure of MgB2 CCs with growth temperature. 相似文献
5.
The electrophysical properties and structure of the nonstoichiometric high-temperature superconductor YBa2Cu3O
y
restored at T = 930–950°C after low-temperature decomposition (T = 200°C) into phases different in the oxygen content have been studied. It has been shown that, unlike heat treatments at
T ≤ 900°C, the superconducting properties are almost completely restored for 3–5 h during grain recrystallization, which is
impossible at lower temperatures. After short-term annealing at T = 930–950°C (for 1–2 h), the ceramic material still contains a significant number of structural defects, most likely, in
cation sublattices. These defects can contribute to the pinning of magnetic vortices, which substantially increases the critical
current density in magnetic fields up to 2 T as compared to ceramic materials produced by the conventional technology. 相似文献
6.
A. A. Blinkin V. V. Derevyanko V. N. Golovin T. V. Sukhareva V. A. Finkel’ 《Physics of the Solid State》2005,47(9):1605-1610
The effect of comparatively weak actions on the structure of the two-gap BCS superconductor MgB2 was studied. The MgB2 samples studied differed in terms of the annealing time at 900°C. It was found that the lattice parameters, residual resistivity, and critical temperature depend only weakly on the annealing time, whereas the electrical resistivity decreases by a few times when the annealing time is increased from 2 to 10 h. It is assumed that the observed effects may be caused by the influence of Mg and B atom ordering in the MgB2 lattice on charge transfer over the two-dimensional B-B σ bonds. 相似文献
7.
E. I. Kuznetsova M. V. Degtyarev Yu. V. Blinova S. V. Sudareva Yu. N. Akshentsev V. P. Pilyugin 《Physics of the Solid State》2017,59(9):1695-1701
MgB2 superconductors subjected to deformation under pressure on Bridgeman anvils and subsequent annealings at 800 and 950°C were investigated by X-ray diffraction, scanning electron microscopy, and microanalysis. It was shown that at these temperatures crystals of MgB2 phase along the residual boron dissolute in the residual liquid magnesium with the formation of both dense and loose areas of MgB2 phase. The latter has a negative influence on critical current. At the same time, after these treatments, the samples become more uniform by the phase and chemical composition. 相似文献
8.
V. Singh S. Watanabe T. K. Gundu Rao I.-J. Lee 《Applied physics. B, Lasers and optics》2011,104(4):1019-1027
Tricalcium aluminate doped with Eu3+ was prepared at furnace temperatures as low as 500°C by using the convenient combustion route and examined using powder X-ray
diffraction, scanning electron microscope and photoluminescence techniques. A room-temperature photoluminescence study showed
that the phosphors can be efficiently excited by UV/Visible region, emitting a red light with a peak wavelength of 616 nm
corresponding to the 5D0–7F2 transition of Eu3+ ions. The phosphor exhibits three thermoluminescence (TL) peaks at 195°C, 325°C and 390°C. Electron Spin Resonance (ESR)
studies were carried out to study the defect centres induced in the phosphor by gamma irradiation and also to identify the
defect centres responsible for the TL process. Room-temperature ESR spectrum of irradiated phosphor appears to be a superposition
of three distinct centres. One of the centres (centre I) with principal g-value 2.0130 is identified as O− ion while centre II with an axially symmetric principal values g
∥=2.0030 and g
⊥=2.0072 is assigned to an F+ centre (singly ionized oxygen vacancy). O− ion (hole centre) correlates with the TL peak at 195°C and the F+ centre (electron centre), which acts as a recombination centre, is also correlated to the 195°C TL peak. F+ centre further appears to be related to the high temperature peak at 390°C. Centre III is also assigned to an F+ centre and seems to be the recombination centre for the TL peak at 325°C. 相似文献
9.
采用X射线衍射仪,扫描电镜,超导量子干涉仪等仪器对纳米C和SiC掺杂的MgB2带材进行了表征,并采用标准四引线法对样品的临界电流进行了测试. 实验表明,C和SiC掺杂在提高MgB2带材高场下的临界电流密度方面具有显著效果. 在温度为4.2 K、磁场大于9 T条件下,C和SiC掺杂样品的临界电流密度与未掺杂样品相比均提高一个数量级以上. 掺杂样品高磁场下良好的临界电流性能主要归因于C对B的替代所产生的晶格畸变、位错等缺陷和局部成分变化而导致的有效晶内钉扎作用. 实验结果表明,SiC掺杂的MgB2带材之所以具有非常好的高场电流特性,和C掺杂的样品一样, C对B的替代起到十分关键的作用.
关键词:
2带材')" href="#">MgB2带材
C掺杂
SiC掺杂
临界电流性能 相似文献
10.
Xiaohua Jia Huiqing Fan Xiangdong Lou Jiaqiang Xu 《Applied Physics A: Materials Science & Processing》2009,94(4):837-841
The CdSnO3 semiconducting oxide that can be used as a gas-sensitive material for detecting ethanol gas is reported in this paper. CdSnO3 nanoparticles were prepared by a chemical co-precipitation synthesis method, in which the preparation conditions were carefully
controlled. The n-type gas-sensing semiconductors were obtained from the as-synthesized powders calcined at 600°C for 1 h.
The phase and microstructure of the obtained nanoparticles were characterized by X-ray diffraction (XRD), transmission electron
microscopy (TEM), and Brunauer–Emmett–Teller (BET) method with a gas adsorption analyzer. CdSnO3 has a small particle size range of 30–50 nm and a high surface area of 9.12 m2/g, and a uniformity global shape. The gas sensitivity and operating temperature, and selectivity of CdSnO3-based sensors were measured in detail. The gas sensors fabricated by CdSnO3 nanoparticles had good sensitivity and selectivity to vapor of C2H5OH when working temperature at 267°C, the value of gas sensitivity at 100 ppm of C2H5OH gas can reach 11.2 times. Furthermore, gas-sensing mechanism was studied by using chromatographic analysis. 相似文献
11.
C. Masingboon S. Maensiri T. Yamwong P.L. Anderson S. Seraphin 《Applied Physics A: Materials Science & Processing》2008,91(1):87-95
Nanocrystalline CaCu3Ti4O12 powders with particle sizes of 50–90 nm were synthesized by a simple method using Ca(NO3)2·4H2O, Cu(NO3)2·4H2O, titanium(diisoproproxide) bis(2,4-pentanedionate) and freshly extracted egg white (ovalbumin) in aqueous medium. The synthesized
precursor was characterized by TG-DTA to determine the thermal decomposition and crystallization temperature which was found
to be at above 400 °C. The precursor was calcined at 700 and 800 °C in air for 8 h to obtain nanocrystalline powders of CaCu3Ti4O12. The calcined CaCu3Ti4O12 powders were characterized by XRD, FTIR, SEM and TEM. Sintering of the powders was conducted in air at 1100 °C for 16 h.
The XRD results indicated that all sintered samples have a typical perovskite CaCu3Ti4O12 structure and a small amount of CuO, although the sintered sample of the 700 °C calcined powders contained some amount of
CaTiO3. SEM micrographs showed the average grain sizes of 12.0±7.8 and 15.5±8.9 μm for the sintered CaCu3Ti4O12 ceramics prepared using the CaCu3Ti4O12 powders calcined at 700 and 800 °C, respectively. The sintered samples exhibit a giant dielectric constant, ε′ of ∼ 1.5–5×104. The dielectric behavior of both samples exhibits Debye-like relaxation, and can be explained based on a Maxwell–Wagner model.
PACS 77.22.Gm; 81.05.Je; 81.07.Wx; 81.20.Ev 相似文献
12.
Qian Zhao Yongchang Liu Qi Cai 《Applied Physics A: Materials Science & Processing》2012,107(4):877-883
Nickel is an important sheath material for the fabrication of MgB2 wires. However, the effects of Ni doping on the phase formation and superconducting properties of MgB2 remain controversial. In this work, Ni powder is selected for doping in MgB2 bulk in order to examine the corresponding changes. Combining with the DSC analysis and in-situ XRD results, we find indications that the Ni powder reacted with Mg and B, forming MgNi2.5B2 at 600°C. The ternary compound began to decompose at a temperature above 800°C. The reactive phase, MgNi2.5B2, acted as an obstacle to the supercurrent flow, creating weak links among the MgB2 grain boundaries. However, it is found that the added Ni formed a eutectic liquid phase with Mg at 506°C. The liquid phase helps the formation of MgB2 at low temperature, which not only increases the density of the sample, but also improves the grain connectivity. Consequently, the presence of Ni in the MgB2 sample is not necessarily a disadvantage; it depends on the desired application. 相似文献
13.
Mahipal RanotW.N. Kang 《Current Applied Physics》2012,12(2):353-363
The MgB2 coated superconducting tapes have been fabricated on textured Cu (0 0 1) and polycrystalline Hastelloy tapes using coated conductor technique, which has been developed for the second generation high temperature superconducting wires. The MgB2/Cu tapes were fabricated over a wide temperature range of 460-520 °C by using hybrid physical-chemical vapor deposition (HPCVD) technique. The tapes exhibited the critical temperatures (Tc) ranging between 36 and 38 K with superconducting transition width (ΔTc) of about 0.3-0.6 K. The highest critical current density (Jc) of 1.34 × 105 A/cm2 at 5 K under 3 T is obtained for the MgB2/Cu tape grown at 460 °C. To further improve the flux pinning property of MgB2 tapes, SiC is coated as an impurity layer on the Cu tape. In contrast to pure MgB2/Cu tapes, the MgB2 on SiC-coated Cu tapes exhibited opposite trend in the dependence of Jc with growth temperature. The improved flux pinning by the additional defects created by SiC-impurity layer along with the MgB2 grain boundaries lead to strong improvement in Jc for the MgB2/SiC/Cu tapes. The MgB2/Hastelloy superconducting tapes fabricated at a temperature of 520 °C showed the critical temperatures ranging between 38.5 and 39.6 K. We obtained much higher Jc values over the wide field range for MgB2/Hastelloy tapes than the previously reported data on other metallic substrates, such as Cu, SS, and Nb. The Jc values of Jc(20 K, 0 T) ∼5.8 × 106 A/cm2 and Jc(20 K, 1.5 T) ∼2.4 × 105 A/cm2 is obtained for the 2-μm-thick MgB2/Hastelloy tape. This paper will review the merits of coated conductor approach along with the HPCVD technique to fabricate MgB2 conductors with high Tc and Jc values which are useful for large scale applications. 相似文献
14.
Polycrystalline Li2WO4 was sintered at temperatures, 400, 450, 500, 550, 600, 650, and 700 °C. After sintering at each particular temperature, the
Li2WO4 was cooled to room temperature. The X-ray diffraction pattern of Li2WO4 exhibits dominant peaks attributable to 7Li2WO4.4H2O (cubic) and Li2WO4 (hexagonal) and thus reveals the extent of hydration of the material. The composition varies on heating at several temperatures
as shown by the presence of new peaks in the diffractogram. Thermogravimetric analysis is used to correlate respective structural
and thermal properties in variation. The impedance spectra show the presence of a semicircle in the higher frequency regions
and straight line behaviors at lower frequencies. SEM micrographs depict the image of sintered Li2WO4. Grain growth studies reveal the sensitiveness of grain toward temperature. The maximum grain size is observed to be ≈5.7 μm
at 700 °C. 相似文献
15.
K. Hu?eková I. Hu?ek P. Ková? M. Kulich E. Dobro?ka V. ?trbík 《Physica C: Superconductivity and its Applications》2010,470(5-6):331-335
Commercial Alfa Aesar MgB2 powder was chemically treated by acetic acid with the aim of MgO removing. Single-core MgB2/Fe ex situ wires have been made by powder-in-tube (PIT) process using the powders treated with different acid concentration. All samples were annealed in argon at 950 °C/0.5 h. Differences in transition temperatures and critical currents of acetic acid treated MgB2 are related to the normal state resistivity, effective carbon substitution from the organic solvent and the active area fraction (grain-connectivity). 相似文献
16.
Yu. M. Shul’ga E. N. Kabachkov D. V. Matyushenko E. N. Kurkin I. A. Domashnev 《Technical Physics》2011,56(1):97-101
TiO2 nanopowder is produced by the low-temperature hydrolysis of TiCl4. The phase composition of the sample is found to form at a hydrolysis temperature of 30–38°C. Low-temperature annealing (up
to 440°C) increases the degree of crystallinity of the phases present in the sample (anatase, brookite) and only weakly affects
their ratio. At 500°C, the sample consists of three phases: rutile is detected apart from anatase and brookite. Brookite begins
to fail at 600°C; at 700°C, crystalline brookite fails completely. 相似文献
17.
J. C. Cruz V. Baglio S. Siracusano R. Ornelas L. Ortiz-Frade L. G. Arriaga V. Antonucci A. S. Aricò 《Journal of nanoparticle research》2011,13(4):1639-1646
Nanosized IrO2 electrocatalysts (d ~ 7–9 nm) with specific surface area up to 100 m2 g−1 were synthesized and characterized for the oxygen evolution reaction in a solid polymer electrolyte (SPE) electrolyzer. The
catalysts were prepared by a colloidal method in aqueous solution and a subsequent thermal treatment. An iridium hydroxide
hydrate precursor was obtained at ~100 °C, which was, successively, calcined at different temperatures from 200 to 500 °C.
The physico-chemical characterization was carried out by X-ray diffraction (XRD), thermogravimetry–differential scanning calorimetry
(TG–DSC) and transmission electron microscopy (TEM). IrO2 catalysts were sprayed onto a Nafion 115 membrane up to a loading of 3 mg cm−2. A Pt catalyst was used at the cathode compartment with a loading of 0.6 mg cm−2. The electrochemical activity for water electrolysis of the membrane-electrode assemblies (MEAs) was investigated in a single
cell SPE electrolyzer by steady-state polarization curves, impedance spectroscopy and chrono-amperometric measurements. A
maximum current density of 1.3 A cm−2 was obtained at 1.8 V and 80 °C for the IrO2 catalyst calcined at 400 °C for 1 h. A stable performance was recorded in single cell for this anode catalyst at 80 °C. The
suitable catalytic activity and stability of the most performing catalyst were interpreted in terms of proper combination
between nanostructure and suitable morphology. 相似文献
18.
Fei Qi Anna Moiseev Joachim Deubener Alfred Weber 《Journal of nanoparticle research》2011,13(3):1325-1334
Anatase is the low-temperature (300–550 °C) crystalline polymorph of TiO2 and it transforms to rutile upon heating. For applications utilizing the photocatalytic properties of nanoscale anatase at
elevated temperatures (over 600 °C) the issue of phase stabilisation is of major interest. In this study, binary TiO2/SiO2 particles were synthesized by a flame aerosol process with TiCl4 and SiCl4 as precursors. The theoretical Si/Ti ratio was varied in the range of 0.7–1.3 mol/mol. The synthesized TiO2/SiO2 samples were heat treated at 900 and 1,000 °C for 3 h to determine the thermostability of anatase. Pyrogenic TiO2 P25 (from Evonik/Degussa, Germany) widely applied as photocatalyst was used as non-thermostabilized reference material for
comparison of photocatalytic activity of powders. Both the non-calcinated and calcinated powders were characterized by means
of XRD, TEM and BET. Photocatalytic activity was examined with dichloroacetic acid (DCA) chosen as a model compound. It was
found that SiO2 stabilized the material retarding the collapse of catalyst surface area during calcination. The weighted anatase content
of 85% remains completely unchanged even after calcination at 1,000 °C. The presence of SiO2 layer/bridge as spacer between TiO2 particles freezes the grain growth: the average crystallite size increased negligibly from 17 to 18 nm even during the calcination
at 1,000 °C. Due to the stabilizing effect of SiO2 the titania nanoparticles calcinated at 900 and 1,000 °C show significant photocatalytic activity. Furthermore, the increase
in photocatalytic activity with calcination temperature indicates that the titania surface becomes more accessible either
due to intensified cracking of the SiO2 layer or due to enhanced transport of SiO2 into the necks thus releasing additional titania surface. 相似文献
19.
Nanoscale Co3O4 particles were doped into MgB2 tapes with the aim of developing superconducting wires with high-current-carrying capacity. Fe-sheathed MgB2 tapes with a mono-core were prepared using the in situ powder-in-tube (PIT) process with the addition of 0.2–1.0 mol% Co3O4. The critical temperature decreased monotonically with an increasing amount of doped Co3O4 particles for all heat-treatment temperatures from 600 to 900 °C. However, the transport critical current density (Jc) at 4.2 K varied with the heat-treatment temperatures. The Jc values in magnetic fields ranging from 7 to 12 T decreased monotonically with increasing Co3O4 doping level for a heat-treatment temperature of 600 °C. In contrast, some improvements on the Jc values of the Co3O4 doped tapes were observed in the magnetic fields below 10 T for 700 and 800 °C. Furthermore, Jc values in all the fields measured increased as the Co3O4 doping level increase from 0 to 1 mol% for 900 °C. This heat-treatment temperature dependence of the Jc values could be explained in terms of the heat-treatment temperature dependence of the irreversibility field with Co3O4 doping. 相似文献
20.
Zhe Zheng Yunzhong Chen Zexiang Shen Jan Ma Chorng-Haur Sow Wei Huang Ting Yu 《Applied Physics A: Materials Science & Processing》2007,89(1):115-119
We report the synthesis of single-crystalline α-Fe2O3 nanoflakes from a simple Fe–air reaction within the temperatures range of 260–400 °C. The nanoflakes synthesized at the lowest
temperature (260 °C) in this work show an ultra-sharp morphology: 5–10 nm in thickness, 1–2 μm in length, 20 nm in base-width
and around 5 nm at the tips; successfully demonstrate the promising electron field emission properties of a large-scaled α-Fe2O3 nanostructure film and exhibit the potential applications as future field-emission (FE) electron sources and displays (FEDs).
The formation and growth of α-Fe2O3 nanostructures were discussed based on the surface diffusion mechanism.
PACS 79.60.Jv; 79.70.+q; 77.84.Bw 相似文献