有机量子阱的光学性质

采用多源有机分子气相沉积系统(OMBD)制备了Alq₃，PBD/Alq₃，PBD/Alq₃/PBD单层、双层以及量子阱结构，利用电化学循环伏安法和吸收光谱、荧光光谱研究了量子阱的类型和样品的光致发光特性.电化学循环伏安法和吸收光谱的测量结果表明，PBD/Alq₃有机量子阱为Ⅰ型量子阱结构.荧光光谱的研究结果表明，单层Alq₃的光致发光峰不随Alq₃厚度变化而变化；但是双层PBD/Alq₃结构光致发光峰随Alq₃厚度的减小而发生蓝移；同样对于PBD/Alq₃/PBD量子阱结构光致发光峰随Alq₃厚度的减小而发生蓝移.对引起光谱蓝移的原因进行了讨论. 关键词： 有机量子阱 光谱蓝移     

CBP/Alq3有机量子阱结构的光致发光

采用多源有机分子气相沉积系统(OMBD)制备了CBP/Alq₃有机多量子阱结构,利用电化学循环伏安特性和吸收光谱、小角X射线衍射、荧光光谱研究了量子阱的能带、结构和光致发光的特性。电化学循环伏安特性和吸收光谱的测量结果表明,CBP的最低占据分子轨道(LUMO)与最高占据分子轨道(HOMO)的位置分别为-2.74,-6.00eV,Alq₃的LUMO与HOMO的位置分别为-3.10,-5.80eV,所以CBP/Alq₃有机量子阱为Ⅰ型量子阱结构。小角X衍射测量显示,在小角的位置(2θ的范围在0°～3°)观察到了对应于量子阱结构的多级布拉格衍射峰,表明多层量子阱结构是有序的层状结构,界面比较完整,界面质量比较好。荧光光谱的研究结果表明,Ⅰ型量子阱结构可以有效地把能量从垒层传递给阱层,从而增强了阱层材料的发光。阱层的厚度对发光峰的位置影响很大,随阱层厚度减小,阱层材料的发光峰出现蓝移现象。并对引起发光峰蓝移的原因进行了讨论。     

有机多层量子阱结构的光致发光特性的研究

采用多源高真空有机分子束沉积系统(OMBDs),将两种有机小分子材料PBD和Alq₃以交替生长的方式,制备了不同厚度的PBD/Alq₃有机多层量子阱结构(OMQWs), 并利用电化学循环伏安法和光吸收分别测定了PBD和Alq₃的最低空分子轨道(LUMO)和最高占据分子轨道(HOMO)。该结构类似于无机半导体中的Ⅰ型量子阱结构,PBD层作为势垒层,Alq3层作为势阱层和发光层,并进行了小角X射线衍射(XRD)的测量。利用荧光光谱研究了OMQWs光致发光(PL)特性,得到随着阱层厚度的降低,光致发光的峰位将蓝移;同时随垒层厚度的减小,PBD的发光峰逐渐消失。利用量子阱结构可以使PBD的能量有效的传递给Alq₃,从而增强Alq₃的发光。     

双量子阱结构OLED效率和电流的磁效应

通过结构为ITO/NPB(60 nm)/ Alq₃ ∶1 wt% rubrene(20 nm)/ Alq₃(3 nm)/ Alq₃ ∶1 wt% rubrene(20 nm)/ Alq₃(20 nm)/LiF/Al的双量子阱的黄色有机电致发光器件,研究了不同磁场强度下的发光效率和电流变化特性. 研究结果表明该器件的电流是随着磁场强度的增加而单调下降的,显示了器件的电阻是随着磁场强度的增加而增加的. 同时也得到了该结构有 关键词： 量子阱 磁场 OLED 磁效应     

NPB/Alq3 界面激子拆分研究

采用瞬态光电压技术研究了NPB和Alq₃界面激子拆分过程和拆分机理.对NPB和Alq₃组成双层结构的样品,在脉冲355nm激光照射下,测量样品的瞬态光电压信号,通过对不同结构的和有界面激子阻挡层的样品的瞬态光电压分析,并排除了ITO/有机外界面对激子拆分的影响,得出了NPB/ Alq₃界面激子拆分机理是向Alq₃ 注入电子,向NPB注入空穴. 关键词： 激子拆分 界面 瞬态光电压     

一种新型铕配合物的有机电致发光性能

研究了一种新型的稀土金属铕配合物EuL₁L₂的光致发光和电致发光特性。将这种铕配合物掺杂到PVK:PBD中,制备成结构为ITO/PVK:PBD:EuL₁L₂/PBD/Alq₃/Mg:Ag/Ag的器件,对其电致发光性能进行研究,发现Eu³⁺离子和Alq₃的相对发光强度随PVK:PBD:EuL₁L₂和Alq₃之间的激子阻挡层PBD的厚度变化而变化,通过调节PBD的厚度,得到了色纯度较高的红色电致发光器件,其光谱具有显著的Eu³⁺离子的光谱特征。     

室温下磁场对基于Alq3的有机电致发光器件的影响

制备了ITO/NPB/LiF/Alq₃/LiF/Al的器件,测量了该组器件效率和亮度的磁效应.结果表明,在50 mT磁场中,当LiF缓冲层厚度为0.8 nm时,器件的效率最大增加了12.4%,磁致亮度最大变化率17%.同时,制备的磷光器件ITO/NPB/LiF/CBP:6 wt% Ir(ppy)₃/BCP/Alq₃/ LiF/Al,在50mT磁场作用下,当LiF缓冲层的厚度为0.8 nm时,器件的效率最大增加12.1%.在Alq_{3 关键词： 有机发光 磁场 效率 磁致亮度}     

NPB/Alq3有机量子阱光电特性研究

利用热蒸发的方法制备了有机量子阱发光器件和Alq3单层发光器件,其中NPB(N,N′-Di-[(lnaphthalenyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine)作垒层,Alq3(Tris-(8-quinolinolato) aluminum)作阱层,量子阱结构类似于无机半导体的Ⅱ型量子阱结构.实验发现有机量子阱发光器件结构中存在垒层向阱层的F(o)rster无辐射共振能量转移,具有良好的电流-电压特性,光谱的窄化及蓝移,并且光谱的蓝移程度随电压的增大而逐渐增强.     

同时掺杂磷光和荧光染料的白色有机电致发光器件性能研究

以磷光染料Ir(piq)₂(acac)作为发光掺杂剂,掺入空穴传输性主体材料NPB中得到红色发光层,荧光材料TBP掺入到主体CBP中作为蓝色发光层,制备了结构为ITO/NPB/NPB：Ir(piq)₂(acac)/CBP/CBP：TBPe/BCP/ALq/Mg：Ag的双发光层白色有机电致发光器件.其中ALq₃、未掺杂的NPB和CBP及BCP层分别作为电子传输层、空穴传输层和激子阻挡层.实验中通过调节发光层厚度及Ir(piq)_{2关键词： 磷光 激子阻挡层 有机电致发光}     

掺杂型红色有机电致发光显示器件

全色显示是有机电致发光显示(OLED)器件发展的目标,而高性能红色发光器件一直是制约全彩色OLED器件实用化的瓶颈,也是目前有机电致发光显示研究的热点。制作了掺杂DCJTB和不同浓度的rubrene两种荧光染料的红色有机电致发光显示器件,以NPB和Alq₃分别作为空穴传输层和电子传输层,发现器件性能与只掺杂DCJTB的器件相比有明显提高,发光效率提高到2～3倍。通过Frster理论和能带理论分析了器件的能量转移机理,研究发现Frster能量转移不是掺杂器件能量转移的主要形式,载流子俘获机制才是器件效率提高的主要原因;rubrene的引入使得能量能够更有效地从Alq₃转移到DCJTB,从而显著地提高了器件的发光效率和性能。     

Low driving voltage in organic light-emitting diode using MoO3/NPB multiple quantum well structure in hole transport layer

Driving voltage of organic light-emitting diode (OLED) is lowered by employing molybdenum trioxide (MoO₃)/N, N'-bis(naphthalene-1-yl)-N,N'-bis(phe-nyl)-benzidine (NPB) multiple quantum well (MQW) structure in hole transport layer. For the device with double quantum well (DQW) structure of ITO/ [MoO₃ (2.5 nm)/NPB (20 nm)]₂/Alq₃(50 nm)/LiF (0.8 nm)/Al (120 nm)], the turn-on voltage is reduced to 2.8 V, which is lowered by 0.4 V compared with that of the control device (without MQW structures), the driving voltage is 5.6 V, which is reduced by 1 V compared with that of the control device at the 1000 cd/m². In this work, the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure, which is attributed not only to the reducing energy barrier between ITO and NPB, but also to the forming charge transfer complex between MoO₃ and NPB induced by the interfacial doping effect of MoO₃.     

Luminescence properties of type-II quantum well light-emitting diodes formed with NPB and Alq3

The organic quantum well devices which are similar to the type-II quantum well of inorganic semiconductor have been fabricated. In the electroluminescence, the blue shift of spectrum with increasing applied voltage is observed, which is interpreted by exciton confinement effect and polarization effect, and the generation of exciton, including carrier injection and energy transfer, is discussed. This energy transfer from barrier to well is studied by photoluminescence and is interpreted in terms of Förster energy transfer. The electromodulation of photoluminescence demonstrates the quenching mainly comes from the dissociation of exciton in NPB and that in Alq₃ is very stable.     

Effect of SiO2/Si3N4 dielectric distributed Bragg reflectors (DDBRs) for Alq3/NPB thin-film resonant cavity organic light emitting diodes

In this article, we report on the effect of SiO₂/Si₃N₄ dielectric distributed Bragg reflectors (DDBRs) for Alq₃/NPB thin-film resonant cavity organic light emitting diode (RCOLED) in increasing the light output intensity and reducing the linewidth of spontaneous emission spectrum. The optimum DDBR number is found as 3 pairs. The device performance will be bad by further increasing or decreasing the number of DDBR. As compared to the conventional Alq₃/NPB thin-film organic light emitting diode (OLED), the Alq₃/NPB thin-film RCOLED with 3-pair DDBRs has the superior electrical and optical characteristics including a forward voltage of 6 V, a current efficiency of 3.4 cd/A, a luminance of 2715 cd/m² under the injection current density of 1000 A/m², and a full width at half maximum (FWHM) of 12 nm for emission spectrum over the 5-9 V bias range. These results represent that the Alq₃/NPB thin-film OLED with DDBRs shows a potential as the light source for plastic optical fiber (POF) communication system.     

Pure red emission of dye-doped organic molecules from microcavity organic light emitting diode

Organic red emitting diode was fabricated by using 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[ij]quinolizin-8-yl)vinyl]-4H-pyran (DCM)-doped tri-(8-quinolitolato) aluminum (Alq₃) as emitter with the structure of G/ITO/NPB(25 nm)/DCM:Alq₃(55 nm)/Alq₃(20 nm)/LiF (1.2 nm)/Al(84 nm), (glass/indium–tin-oxide/4,4-bis-[N-(1-naphthyl)-N-phenyl-amino]biphenyl, G/ITO/NPB), the wavelength of the maximal emission of which is 615 nm. By introducing cavity to Organic light emitting diode (OLED), we got pure red emitting diode with wavelength of the maximal emission of 621 nm and full-width at half-maximum (FWHM) of 27 nm. As far as we know, it is the best result in the dye-doped organic red emitting diode. We also made a device of G/ITO/NPB(25 nm)/DCM:Alq₃(29 nm)/DCM:PBD(26 nm)/Alq₃(20 nm)/LiF(1.2 nm)/Al(84 nm), in order to compare the performance of Alq₃ with that of 2-(4-biphenylyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole (PBD) as host material. It was found that the performance of device A is better than that of C both in brightness and color purity,as well as in EL efficiency.