The theory and experiment of very-long-wavelength 256×1 GaAs/Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>As quantum well infrared detector linear arrays

The 256×1 linear array of multiple quantum wells infrared photodetector (QWIP) is designed and fabricated for the peak response wavelength at λ _P = 14.6 μm. The response spectral width is bigger than 2.2 μm. The two-dimensional (2D) diffractive coupling grating has been formed on the top QWIP photosensitive pixel for coupling the infrared radiation to the infrared detective layers. The performance of the device at V _B = 3 V and T = 45 K has the responsibility 4.28×10⁻² (A/W), the blackbody detectivity D _b* = 5.14×10⁹ (cm·Hz^1/2/W), and the peak detectivity D _λ * = 4.24× 10¹⁰ (cm·Hz^1/2/W). The sensor pixels are connected with CMOS read out circuit (ROC) hybridization by indium bumps. When integral time is 100 μs, the linear array has the effective pixel of QWIP FPA N _ef of 99.2%, the average responsibility (V/W) of 3.48×10⁶ (V/W), the average peak detectivity D _λ * of 8.29×10⁹ (cm·Hz^1/2/W), and the non-uniformity U_R of 5.83%. This device is ready for the thermal image application. Supported by the National Natural Science Foundation of China (Grant No. 10374095)     

Micromachined Uncooled IR Bolometer Linear Array Using VO2 Thin Films

Mixed vanadium oxide thin films, as VO₂ for the main composition are materials for uncooled microbolometer due to their high temperature coefficient of resistance (TCR) at room temperature. This paper describes the design and fabrication of 8-element linear array IR uncooled microbolometers using the films and micromachining technology. The characteristics of the array is investigated in the spectral region of 8–12 m. The fabricated detectors exhibit responsivity of up to 10 KV/W, typical detectivity of 1.89×10⁸ cmHz^1/2/W, and thermal time constant of 11 ms, at 296 K and at a frequency of 30 Hz. Furthermore, The uncorrected response uniformity of the linear array bolometers is less than 20%.     

Computer modeling of MWIR single heterojunction photodetector based on mercury cadmium telluride

In the present paper, an abrupt heterojunction photodetector based on Hg_1 − xCd_xTe (MCT) has been simulated theoretically for mid-infrared applications. A semi-analytical simulation of the device has been carried out in order to study the performance ratings of the photodetector for operation at room temperature. The energy band diagram, carrier concentration, electric field profile, dark current, resistance–area product, quantum efficiency and detectivity have been calculated and optimized as a function of different parameters such as device thickness, applied reverse voltage and operating wavelength. The effect of energy band offsets in conduction and valance band on the transportation of minority carriers has been studied. The influences of doping concentration, electron affinity gradient and the p–n junction position within heterostructure on potential barrier have been analyzed. The optical characterization has been carried out in respect of quantum efficiency, and detectivity of the heterojunction photodetector. In present model the Johnson–Nyquist and shot noise has been considered in calculation of detectivity. The simulated results has been compared and contrasted with the available experimental results. Results of our analytical-cum-simulation study reveal that under suitable biasing condition, the photodetector offers a dark current, I_D ≈ 6.5 × 10⁻¹² A, a zero-bias resistance–area product, R₀A ≈ 11.3 Ω m², quantum efficiency, η ≈ 78%, NEP = 2 × 10⁻¹² W Hz^1/2 and detectivity D^* ≈ 4.7 × 10¹⁰ mHz^1/2/W.     

TiO2 Nanotube Array/Monolayer Graphene Film Schottky Junction Ultraviolet Light Photodetectors

Schottky junctions made from a titanium dioxide nanotube (TiO₂NT) array in contact with a monolayer graphene (MLG) film are fabricated and utilized for UV light detection. The TiO₂NT array is synthesized by the anodization and the MLG through a simple chemical vapor deposition process. Photoconductive analysis shows that the fabricated Schottky junction photodetector (PD) is sensitive to UV light illumination with good stability and reproducibility. The corresponding responsivity (R), photoconductive gain (G), and detectivity (D*) are calculated to be 15 A W^?1, 51, and 1.5 × 10¹² cm Hz^1/2 W^?1, respectively. It is observed that the fabricated PD exhibits spectral sensitivity and a simple power‐law dependence on light intensity. Moreover, the height of the Schottky junction diode is derived to be 0.59 V by using a low temperature I–V measurement. Finally, the working mechanism of the TiO₂NT array/MLG film Schottky junction PD is elucidated.     

Study of the interface Si-nc/SiO2 by infrared spectroscopic ellipsometry and X-ray photoelectron spectroscopy

SiO_x films (1<x<2), 0.5 μm thick, have been elaborated by electron-gun evaporation. A thermal annealing of these films induced a phase separation leading to the formation of Si nanocrystals embedded in a SiO₂ matrix. These films have been studied by infrared spectroscopic ellipsometry and by X-ray photoelectron spectroscopy (XPS). The effective dielectric function of the thin films has been extracted in the 600–5000 cm⁻¹ range which allowed us to deduce the dielectric function of the matrix surrounding the Si-nc. A study of the Transverse Optical (TO) vibration mode has revealed the presence of SiO_x into the matrix. Before XPS measurements, the films have been etched in fluorhydric acid to remove the superficial SiO₂ layer formed during air exposure. The Si 2p core-level emission has been recorded. The decomposition of the Si 2p peak into contributions of the usual five tetrahedrons Si-(Si_4−nO_n) (n=0–4) has also revealed the presence of a SiO_x phase. Consistency between infra-red and XPS results is discussed.     

Modeling and analysis of photoconductive detectors based on Hg<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te for free space optical communication

In this paper we report a theoretical analysis of a long wavelength photoconductive detector for characterizing and optimizing the device in respect of voltage responsivity, quantum efficiency, detectivity and noise equivalent power. The model has been applied to examine the potential of an n-type Hg_0.77Cd_0.23Te photoconductive detector for possible application in free space optical communication system operating at the atmospheric window near 9.6 μ m. In the present analysis we have taken into account all the major recombination mechanisms (e.g., Radiative, Auger, and Shockley-Read-Hall types) including the effect of surface recombination at the interfaces that shape the characteristics of photoconductor. The results obtained on the basis of our analysis reveal that in the absence of surface recombination the device exhibits a peak quantum efficiency of 90%, a maximum detectivity of 10⁸ MHz^1/2/W at 77 K, a 3 dB bandwidth of 117.86 MHz and noise voltage of 5.4 × 10⁻⁶ V/Hz^1/2. The sweep-out effect has been found to degrade the detectivity nearly by a factor of 10 at the same temperature and wavelength of operation. The estimated noise equivalent power of the photodetector is of the order of 10⁻⁹ W at 9.6 μm wavelength.     

The effect of (00l) crystal plane orientation on the thermoelectric properties of Bi2Te3 thin film

Highly (00l)-oriented pure Bi₂Te₃ films with in-plane layered grown columnar nanostructure have been fabricated by a simple magnetron co-sputtering method. Compared with ordinary Bi₂Te₃ film and bulk materials, the electrical conductivity and Seebeck coefficient of such films have been greatly increased simultaneously due to raised carrier mobility and electron scattering parameter, while the thermal conductivity has been decreased due to phonon scattering by grain boundaries between columnar grains and interfaces between each layers. The power factor has reached as large as 33.7 μW cm⁻¹ K⁻², and the out-of-plane thermal conductivity is reduced to 0.86 W m⁻¹ K⁻¹. Our results confirm that tailoring nanoscale structures inside thermoelectric films effectively enhances their performances.     

基于VO2薄膜非致冷红外探测器光电响应研究

VO₂薄膜是非致冷微测辐射热红外探测器热敏电阻材料.研究中应用微电子工艺制备了VO₂溅射薄膜红外探测器,在296K的环境中测试了该探测器在不同的直流偏置、光调制频率下对873K标准黑体源8—12μm红外辐射的光电响应以及器件的噪声电压,在10和30Hz的调制频率下其响应率分别大于17kV/W和接近10kV/W.该探测器实现了探测率D大于1.0×10⁸cm (Hz)^1/2/W,热时间常量为0.011s的8—12μm非致冷 关键词： 非致冷测辐射热探测器 红外探测器 二氧化钒 薄膜     

Colloidal quantum dots for mid-IR applications

The use of colloidal material offers an interesting alternative to top down approaches for the realization of low cost infrared detectors. We demonstrate photoconduction in thin films of a colloidal material in the mid-infrared (up to 7 μm), using HgTe colloidal quantum dots. Thin films of the colloidal quantum dots have a large absorption coefficient (>10⁴ cm⁻¹), and the photoconductive response is dramatically improved by encapsulating the nanoparticle into an inorganic matrix of As₂S₃. Such devices show fast response and large detectivity (>10¹⁰ jones) at temperatures above 200 K.     

Hf-sputtered indium oxide films doped with tin

Indium oxide films doped with tin (ITO-films) have been hf-sputtered from an 80 at-%In₂O₃/20 at-%SnO₂ target onto glass substrates. The sputter atmosphere contained mainly argon (10⁻²Torr) with addition of oxygen (0≦p _{O 2}≦2·10⁻²Torr). The sputtered films aren-conductors. The conductivity and density of charge carriers depend on the oxygen content of the sputter gas. They could be varied by two orders of magnitude. In air or in oxygen atmosphere the films oxidize at the surface and for a certain depth beneath the surface, thus decreasing the conductivity. The Hall mobility of the sputtered films is smaller (≈10 cm²V⁻¹ s⁻¹) than one observes at ITO films produced by CVD sparaying or other methods. The conductivity of as sputtered films approached maximum values of about 1000Ώ⁻¹cm⁻¹.