液体基底表面金薄膜中的有序结构和自组装现象

研究了沉积在液体基底（硅油）表面金薄膜中的带状有序结构和自组装现象.实验结果表明：在一定条件下，生长在硅油表面的金薄膜中可形成一种特征的有序结构，它是由近似矩形状的畴块拼接而成的；相邻畴块的长度近似相等，但宽度一般不同，因而具有特征长度为101—102μm数量级的准周期结构.进一步的实验发现：此类带状有序结构是由薄膜中特征内应力所引起的物质相互挤压而形成的.另外，对此类具有近似自由支撑边界条件的薄膜中的内应力形成机理进行了研究. 关键词： 薄膜 有序结构 内应力 自组装     

硅油基底表面铁薄膜的生长机理及表面有序结构

利用直流溅射方法在液体基底(硅油)表面成功制备出金属铁薄膜系统，研究了其生长机理及特征的表面有序结构.实验发现铁薄膜的生长过程与液相基底表面非磁性金属薄膜的情况类似，基本服从二阶段生长模型.连续铁薄膜中可观测到尺寸巨大的圆盘形有序结构，其生长演化与溅射功率、沉积时间和真空环境中的生长时间等实验条件密切相关.实验证明，此类有序结构是在薄膜内应力作用下，铁原子及原子团簇在液体表面自由扩散迁移，并最终在硅油基底表面某些区域成核凝聚所致.在较大溅射功率和沉积时间条件下，圆盘外部区域的铁薄膜中形成周期分布的波纹褶皱，其波长约为10 μm，波峰基本与圆盘的边界平行.进一步研究表明：在沉积过程中，由于沉积铁原子的局域能量作用，导致硅油的表面层结构发生改变而形成一聚合物层；在随后的冷却过程中，聚合物层的强烈收缩使铁薄膜处于很大的压应力场中，促使薄膜起皱形成波纹结构. 关键词： 液体基底 铁薄膜 生长机理 有序结构     

沉积在液相基底表面磁性薄膜的形成机理和特性研究

采用气相沉积方法在硅油基底表面成功制备了一种具有近似自由支撑的新型铁薄膜系统，并研究了其生长机制、内应力分布以及低温磁特性．实验发现，此类铁薄膜的生长机制与沉积在液相基底表面非磁性薄膜的情况类似，即服从二阶段生长模型．在固定基底温度的条件下，当沉积速率较小时，可制得近似透明的连续铁薄膜，薄膜中呈现明显的特征尺寸达10^2μm数量级的带状准周期有序结构，它是由铁薄膜样品中内应力释放时所引起的薄膜板块间相互挤压而逐渐形成的．当沉积速率较大时，制得的连续铁薄膜呈金属色．实验发现，在临界温度Tc=10—15K附近，具有金属色的铁薄膜样品的矫顽力Hc有一明显的极大值峰．研究表明，这一奇异的矫顽力特性与液相基底表面铁薄膜中的原子团簇尺寸分布、无序的薄膜表面磁各向异性以及团簇间的磁性相互作用等因素有关．     

封面说明

采用气相沉积方法在液相基底表面成功制备了一种具有近似自由支撑的新型铁薄膜系统．该薄膜的生长机制服从所谓的二阶段生长模型：沉积铁原子在液相基底表面首先成核并凝聚成准圆形原子团簇；然后这些原子团簇在液体表面做无规扩散和旋转运动，从而形成分枝状凝聚体(上图)，并随着薄膜名义厚度的增加，分枝状凝聚体逐渐相互连接成网状薄膜，     

楔形金薄膜系统中的反常跳跃电导和隧道效应

采用真空蒸镀方法，利用液体衬底在沉积过程中的线性扩散过程，在玻璃表面制备出斜率仅为10^-5的楔形金薄膜逾渗系统，并用四引线方法测量了从该薄膜系统中得到的均匀无序金薄膜的导电特性.实验结果表明：和通常的平整薄膜逾渗系统相比，该薄膜系统呈现更为强烈的跳跃电导和隧道效应. 关键词： 带状薄膜 跳跃电导 隧道效应     

不稳定液体基底上溅射金属Ag薄膜的非平衡生长

本文研究了不稳定液体基底上溅射金属薄膜的非平衡生长现象。实验发现：此类薄膜的生长速率不再是常数，与基底温度、表面覆盖率密切相关；薄膜的表面形貌受到了基底温度、溅射功率、固体-液体界面性质等因素的复杂影响。分析表明：生长界面的表面张力及其各向异性对薄膜生长过程起着重要的作用。     

非均匀基底上三维薄膜生长的模拟研究

考虑原子在基底表面的扩散、沿岛周界的扩散和不同层间的扩散以及非均匀基底上表面吸附能分布的各向异性，建立起非均匀基底表面上原子扩散和三维薄膜生长的动力学蒙特卡罗模型.模拟得到在不同生长条件下出现的层状生长、岛状生长和混合生长三种生长模式和相应的多层薄膜生长形貌图.通过统计三维薄膜中原子在各层的分布，计算薄膜的表面粗糙度，得到薄膜生长模式与生长条件之间的关系. 关键词： 薄膜生长 非均匀基底 动力学蒙特卡罗模拟     

楔形Al薄膜的物理特性

采用真空蒸镀方法,利用液体衬底在沉积过程中的扩散,形成了沉积在玻璃表面的楔形铝薄膜,并研究了它的结构和I-V特性.实验表明,楔形铝薄膜的斜率仅10^-6—10^-7,具有与一般非平整薄膜不同的I-V特性,其非平整效应不能用普通的非平整薄膜的RRN理论模型来解释. 关键词： 楔形铝薄膜     

沉积在液体衬底上连续铝薄膜的微观结构

研究了沉积在硅油衬底表面的连续铝薄膜的微结构及其表面形貌.与沉积在单晶硅表面的铝薄膜相比,两种铝薄膜均属颗粒结构,但硅油表面的铝薄膜具有颗粒尺寸较小、大小不均匀,表面起伏较大等特点,而且在该铝薄膜边缘的下表面,有一明显的波纹状楔型结构,其斜率仅为10^-4—10^-5.实验结果表明：这一现象是由于液体衬底的热膨胀行为引起的.此外对样品的晶态也进行了研究. 关键词： 铝薄膜 液体衬底 微观结构     

无序杂质区域对沉积在胶体基底表面的金原子凝聚体分形结构的影响

由于受基底表面无规分布杂质的影响,沉积在熔融玻璃基底表面的金原子凝聚形成了具有特殊结构的分形凝聚体.根据这一实验结果,建立了各向异性的团簇团簇凝聚模型,对此类胶体基底表面的金原子分枝状凝聚体的生长过程进行了计算机模拟,研究了无规分布的杂质区域对凝聚体各种参数的影响,其结果与实验相符合 关键词： 薄膜生长 MonteCarlo模拟 分形     

Edge Effects on Growth of Ordered Stress Relief Patterns in Free Sustained Aluminum Films

An unusual form of ordered stress relief patterns is observed in a nearly free sustained aluminum film system deposited on liquid substrates by the therm~l evaporation method. The edge effects on the growth of the ordered patterns are systematically studied. It is found that the patterns initiate from the film edges, preexisting ordered patterns, or other imperfections of the film. When the patterns extend in the film regions, they decay gradually and finally disappear. If they develop along the boundaries, however, the sizes are almost unchanged over several millimeters. The stress relief patterns look like rectangular waves in appearance, which are proven to evolve from sinusoidal to triangular waves gradually. The morphological evolution can be well explained by the general theory of buckling of plates.     

Formation mechanism of ordered stress-relief patterns in a free sustained Cu film system

A nearly free sustained copper （Cu） film system has been successfully fabricated by thermal evaporation deposition of Cu atoms on silicone oil surfaces, and a characteristic ordered pattern has been systematically studied. The ordered pattern, namely, band, is composed of a large number of parallel key-formed domains with different width w but nearly uniform length L; its characteristic values of w and L are very susceptible to the growth period, deposition rate and nominal film thickness. The formation mechanism of the ordered patterns is well explained in terms of the relaxation of the internal stress in the films, which is related to the nearly zero adhesion of the solid-liquid interface. By using a two-time deposition method, it is confirmed that the ordered patterns really form in the vacuum chamber.     

Effect of Al Doping on Properties of SiC Films

Undoped and Al-doped 3C-SiC films are deposited on Si（100） substrates by low-pressure chemical vapour deposition. Effects of aluminium incorporation on crystallinity, strain stress, surface morphology and growth rate of SiC films have been investigated. The x-ray diffraction patterns and rocking curves indicate that the crystallinity is improved with aluminium doping. Raman scatting patterns also demonstrate that the strain stress in SiC films is released due to the incorporation of Al ions and the increase of film thickness. Furthermore, due to the catalysis of surface reaction which is induced by trimethylaluminium, the growth rate is increased greatly and the growth process varies from three-dimensional island-growth mode to step-flow growth mode.     

Enhancement of photoluminescence emission intensity of zirconia thin films via aluminum doping for the application of solid state lighting in light emitting diode

Al doped ZrO₂ thin films were deposited on quartz substrates by sol–gel dip coating technique. X-ray diffraction pattern showed the deterioration of the crystallinity of the films with increase in Al doping concentration due to the formation of stress in the film. Scanning electron microscope images showed crack free surface. An average transmittance of >80% (in UV–vis region) was observed for all samples. Optical band gap was found to vary as a function of doping concentration. Photoluminescence spectra of the films exhibited an increase in the emission intensity with increase in Al doping concentration which is due to the increase in oxygen vacancies in the Al doped films. The “Blueshift” and “Redshift” of the PL spectra with increase in Al concentration originates from the change of stress in the films. The enhancement of PL intensity in the Al doped ZrO₂ thin films make it suitable for generation of solid state lighting in light emitting diode.     

Transparent conductive ZnO:Al films grown by atomic layer deposition for Si-wire-based solar cells

Structural, electrical, and optical properties of atomic layer-controlled Al-doped ZnO (ZnO:Al) films grown by atomic layer deposition (ALD) on glass substrates were characterized at various growth temperatures for use as transparent electrodes. The Al atomic content in ZnO:Al films increased due to the reduced ZnO film growth rate with increasing temperature. The preferred orientation of ZnO:Al films was changed, and the optimum condition for best crystallinity was identified by varying the growth temperature. Furthermore, the carrier concentration of free electron was increased by substituting the Zn sites with Al atoms in the crystal, resulting from monolayer growth based on alternate self-limiting surface chemical reactions. The electrical resistivity of ZnO:Al film grown by ALD at 225 °C reached the lowest value of 8.45 × 10⁻⁴ Ω cm, with a carrier mobility of 9.00 cm² V⁻¹ s⁻¹ and optical transmittance of ∼93%. This result demonstrates that ZnO:Al films grown by ALD possess excellent potential for applications in electronic devices and displays as transparent electrodes and surface passivation layers.     

Quantum size effects in metal thin films grown on quasicrystalline substrates

We have investigated by scanning tunneling microscopy the growth of Bi and Ag thin films on the fivefold surface of Al63Cu24Fe13 and Al72Pd19.5Mn8.5 quasicrystal, respectively. For both systems, we observe the formation of islands with magic height, corresponding to the stacking of a specific number of atomic layers. We interpret this unusual growth morphology in terms of quantum size effects, arising from the confinement of the electron within the film. The magic island heights are thus a direct manifestation of the electronic structure of the quasicrystalline substrates.     

The Al-doping and post-annealing treatment effects on the structural and optical properties of ZnO:Al thin films deposited on Si substrate

Al-doped ZnO (ZnO:Al) thin films with different Al contents were deposited on Si substrates using the radio frequency reactive magnetron sputtering technique. X-ray diffraction (XRD) measurements showed that the crystallinity of the films was promoted by appropriate Al content (0.75 wt.%). Then the ZnO:Al film with Al content of 0.75 wt.% was annealed in vacuum at different temperatures. XRD patterns revealed that the residual compressive stress decreased at higher annealing temperatures. While the surface roughness of the ZnO:Al film annealed at 300 °C became smoother, those of the ZnO:Al films annealed at 600 and 750 °C became rougher. The photoluminescence (PL) measurements at room temperature revealed a violet, two blue and a green emission. The origin of these emissions was discussed and the mechanism of violet and blue emission of ZnO:Al thin films were suggested. We concluded that the defect centers are mainly ascribed to antisite oxygen and interstitial Zn in annealed (in vacuum) ZnO:Al films.     

Oxidation of low-index FeAl surfaces

The oxidation of the (100), (110) and (111) surfaces of the intermetallic compound FeAl has been investigated using LEED and XPS. On all three surfaces, oxidation at room temperature leads to the formation of an amorphous oxide film on top of an Al-depleted interlayer. The film growth can be divided into two regions of differing kinetics, i.e. the initial formation of a closed oxide film and a subsequent thickening. In the first region, the oxygen-uptake rate varies significantly with surface orientation, while in the thickening regime the uptake is the same for all surfaces. The maximum thickness as well as the composition of the oxide films were found to depend on the initial oxidation rate. At higher oxidation temperatures, ordered oxide films of around 5–8 Å in thickness are formed, very similar to those observed on NiAl. Photoemission spectra from these ordered phases showed evidence for Al atoms in two different chemical environments, i.e. the well-known oxide species in the interior of the film and an additional species present at the oxide/alloy interface.