Synthesis and characterization of Mn-doped Zn2SiO4/SiO2 phosphor particles in core-shell structure

Manganese-doped zinc silicate (Zn₂SiO₄:Mn) is a kind of phosphor material that has a photo-luminescent (PL) and cathode-luminescent (CL) properties with intensive green light emission at 520 nm. The particles consisting of SiO₂@Zn₂SiO₄:Mn (SiO₂ core-Zn₂SiO₄:Mn shell) were synthesized via colloidal process and forced precipitation. After drying, the Zn/Mn precipitates were coated on the surface of SiO₂ particles. The Zn/Mn precipitates reacted with SiO₂ and transformed to Zn₂SiO₄:Mn by suitable calcination. The microstructure, crystalline phase, and luminescent characteristics of the products were studied. Besides, a CL device consisting of the core-shell powder was characterized.     

Enhanced photoluminescence properties of Zn2SiO4:Mn co-activated with Y/Li under VUV excitation

A series of green phosphors Zn_1.92−2xY_xLi_xSiO₄:0.08Mn²⁺ (0≤x≤0.03) were prepared by solid-state synthesis method. Phase and lattice parameters of the synthesized phosphors were characterized by powder X-ray diffractometer (XRD) and the co-doped effects of Y³⁺/Li⁺ upon emission intensity and decay time were investigated under 147 nm excitation. The results indicate that the co-doping of Y³⁺/Li⁺ has favorable influence on the photoluminescence properties of Zn₂SiO₄:Mn²⁺, and the optimal photoluminescence intensity of Zn_1.90Y_0.01Li_0.01SiO₄:0.08Mn²⁺ is 103% of that of commercial phosphor when the doping concentration of Y³⁺/Li⁺ is 0.01 mol. Additionally, the decay time of phosphor is much shortened and the decay time of Zn_1.90Y_0.01Li_0.01SiO₄:0.08Mn²⁺ is 3.39 ms, shorter by 1.83 ms than that of commercial product after Y³⁺/Li⁺ co-doping.     

Preparation and characterization of Zn2SiO4: Mn phosphors with hydrothermal methods

Mn²⁺-doped Zn₂SiO₄ phosphors had been prepared by hydrothermal method in stainless-steel autoclaves. Effects of synthesized methods, reaction temperature, ambience of heat treatment on the structure and the luminescence properties of this silicate were studied with X-ray diffraction apparatus (XRD), transmission electron microscope (TEM), scanning electron microscope (SEM) and fluorescence spectrum. Results show that Zn₂SiO₄ nanocrystalline can be obtained by hydrothermal method at relatively low temperatures. The absorption pattern shows an absorption edge at about 380 nm originated from ZnO crystals and two absorption bands at about 215 and 260 nm. Mn²⁺-doped Zn₂SiO₄ has a luminescence band with the wavelength at about 522 nm under 255 nm excitation, and the luminescent intensity increases after being heat treated.     

A white light emitting phosphor Sr1.5Ca0.5SiO4:Eu, Tb, Eu for LED-based near-UV chip: Preparation, characterization and luminescent mechanism

In this work, we report preparation, characterization and luminescent mechanism of a phosphor Sr_1.5Ca_0.5SiO₄:Eu³⁺,Tb³⁺,Eu²⁺ (SCS:ETE) for white-light emitting diode (W-LED)-based near-UV chip. Co-doped rare earth cations Eu³⁺, Tb³⁺ and Eu²⁺ as aggregated luminescent centers within the orthosilicate host in a controlled manner resulted in the white-light phosphors with tunable emission properties. Under the excitation of near-UV light (394 nm), the emission spectra of these phosphors exhibited three emission bands: one broad band in the blue area, a second band with sharp lines peaked in green (about 548 nm) and the third band in the orange-red region (588-720 nm). These bands originated from Eu²⁺ 5d→4f, Tb³⁺⁵D₄→⁷F_J and Eu³⁺⁵D₀→⁷F_J transitions, respectively, with comparable intensities, which in return resulted in white light emission. With anincrease of Tb³⁺ content, both broad Eu²⁺ emission and sharp Eu³⁺ emission increase. The former may be understood by the reduction mechanism due to the charge transfer process from Eu³⁺ to Tb³⁺, whereas the latter is attributed to the energy transfer process from Eu²⁺ to Tb³⁺. Tunable white-light emission resulted from the system of SCS:ETE as a result of the competition between these two processes when the Tb³⁺ concentration varies. It was found that the nominal composition Sr_1.5Ca_0.5SiO₄:1.0%Eu³⁺, 0.07%Tb³⁺ is the optimal composition for single-phased white-light phosphor. The CIE chromaticity calculation demonstrated its potential as white LED-based near-UV chip.     

Synthesis and characterization of core-shell structured SiO2@YVO4:Yb,Er microspheres

In this paper, the core-shell structured SiO₂@YVO₄:Yb³⁺,Er³⁺ microspheres have been successfully prepared via a facile sol-gel process followed by a heat treatment. X-ray diffraction, field emission scanning electron microscopy, energy disperse X-ray spectroscopy, transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence spectra were used to characterize the samples. The results reveal that the SiO₂ spheres have been successfully coated by YVO₄:Yb³⁺,Er³⁺ phosphors to form core-shell structures and the size of obtained microspheres has a uniform distribution. Additionally, the samples exhibit bright green luminescence under the excitation of a 980 nm laser diode. The photoluminescence intensity increases with the number of coatings. These core-shell structured SiO₂@YVO₄:Yb³⁺,Er³⁺ microspheres may have great potential in the fields of infrared detection and display devices.     

Synthesis and properties of submicron range CaSO4:Eu particles

CaSO₄:Eu with particle size in submicron range was synthesized. Radiation induced Eu³⁺↔Eu²⁺ conversion as well as thermal conversion was studied. The samples showed thermal conversion above 400 °C. However, no radiation induced conversion in submicron range particles was observed. Particles heated above 400 °C coalesce and when heated at 925 °C bigger particles of 20 μm size were formed. Optical microscopy of these particles reveals red inclusion of about 5 μm inside CaSO₄ particle. It is speculated that the red inclusion is CaS:Eu²⁺.     

Luminescent properties of Eu-activated Sr3B2SiO8: A red-emitting phosphor for white light-emitting diodes

Single-phased Sr₃B₂SiO₈:Eu³⁺ phosphor was prepared by a solid-state method at 1020 °C. The luminescence spectra showed that Sr₃B₂SiO₈:Eu³⁺ phosphor can be effectively excited by near ultraviolet light (393 nm) and blue light (464 nm). When excited at 393 or 464 nm Sr₃B₂SiO₈:Eu³⁺ exhibited the main emission peaks at 611 and 620 nm, which resulted from the supersensitive ⁵D₀→⁷F₂ transition of Eu³⁺. The luminescence intensity of Sr₃B₂SiO₈:Eu³⁺ at 611 and 620 nm reached the maximum when the doping content of Eu³⁺ was 4.5 mol%. Its chromaticity coordinates (0.646, 0.354) were very close to the NTSC standard values (0.67, 0.33). Thus, Sr₃B₂SiO₈:Eu³⁺ is considered to be an efficient red-emitting phosphor for long-UV InGaN-based light-emitting diodes.     

Hydrothermal synthesis and optical characteristics of Eu in Zn2SnO4 nanocrystals

Zn₂SnO₄:Eu³⁺ nanocrystals were one-step synthesized by hydrothermal method for the first time. All the products were systematically characterized by powder X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), electron probe X-ray microanalyzer (EPMA), photoluminescence (PL) and photoluminescent excitation (PLE). The characteristic peak of Eu³⁺-doped in Zn₂SnO₄ nanocrystals was also detected. The luminescent properties of blank and Eu³⁺-doped Zn₂SnO₄ nanocrystals were reported.     

Ca2SiO4:Dy3+材料的制备及其发光特性

采用高温固相法制备了Ca₂SiO₄:Dy³⁺发光材料.在365nm紫外光激发下,测得Ca₂SiO₄:Dy³⁺材料的发射光谱为一多峰宽谱,主峰分别位于486nm,575nm和665nm处;监测575nm发射峰,测得材料的激发光谱为一多峰宽谱,主峰分别位于331nm,361nm,371nm,397nm,435nm,461nm和478nm处.研究了Dy³⁺掺杂浓度对Ca₂SiO₄:Dy³⁺材料发射光谱及发光强度的影响,结果显示,随Dy³⁺浓度的增大,黄、蓝发射峰强度比(Y/B)逐渐增大,利用Judd-Ofelt理论解释了其原因;随Dy³⁺浓度的增大,Ca₂SiO₄:Dy³⁺材料发光强度先增大,在Dy³⁺浓度为4 mol%时到达峰值,而后减小,根据Dexter理论其浓度猝灭机理为电偶极-电偶极相互作用.研究了电荷补偿剂Li⁺,Na⁺和K⁺对Ca₂SiO₄:Dy³⁺材料发射光谱的影响,结果显示,不同电荷补偿剂下,随电荷补偿剂掺杂浓度的增大,Ca₂SiO₄:Dy³⁺材料发射光谱强度的演化趋势相同,即Ca₂SiO₄:Dy³⁺材料发射峰强度先增大后减小,但不同电荷补偿剂下,材料发射峰强度最大处对应的补偿剂浓度不同,对应Li⁺,Na⁺和K⁺时,浓度分别为4mol%,4mol%和3mol%. 关键词： 白光LED 2SiO₄:Dy³⁺')" href="#">Ca₂SiO₄:Dy³⁺ 发光特性 电荷补偿     

掺杂浓度和烧结温度对CaWO4:Eu3+发光性能的影响

采用微乳液法合成掺杂浓度不同和烧结温度不同的CaWO₄:Eu³⁺系列荧光体, 这些荧光体都具有Eu³⁺离子的特征荧光发射. 在不同温度烧结后, 高浓度掺杂的样品(Eu³⁺掺杂30或50 mol%)可获得最大的发光强度, 低浓度掺杂的样品(掺杂0.5—2 mol%)在800 ℃烧结时也可获得优异的发光强度. 实验结果表明, Eu³⁺离子高浓度掺杂的CaWO₄:Eu³⁺在紫外光激发下可成为高效发光的荧光粉.     

Energy transfer between activators at different crystallographic sites in Sr3SiO5:Eu

A yellow phosphor, Sr₃SiO₅:Eu²⁺, was synthesized by a high temperature solid-state method. Sr₃SiO₅:Eu²⁺ exhibits a single yellow emission under the blue radiation excitation. However, Sr₃SiO₅:Eu²⁺ shows a two-peak emission under the ultraviolet radiation excitation when Eu²⁺ doping content is less than 0.01 mol. Moreover, the blue emission disappears and the yellow emission reaches the peak value when Eu²⁺ doping content is 0.01 mol. Namely, the energy transfer takes place between the Eu²⁺ activators, which is located at two different crystallographic sites in the Sr₃SiO₅. And the energy transfer mechanism is the dipole-dipole interaction.     

Sol-gel growth of Gd2MoO6:Eu nanocrystalline layers on SiO2 spheres (SiO2@Gd2MoO6:Eu) and their luminescent properties

SiO₂@Gd₂MoO₆:Eu³⁺ core-shell phosphors were prepared by the sol-gel process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectra (EDS), transmission electron microscopy (TEM), photoluminescence (PL) spectra as well as kinetic decays were used to characterize the resulting SiO₂@Gd₂MoO₆:Eu³⁺ core-shell phosphors. The XRD results demonstrate that the Gd₂MoO₆:Eu³⁺ layers on the SiO₂ spheres begin to crystallize after annealing at 600 °C and the crystallinity increases with raising the annealing temperature. The obtained core-shell phosphors have a near perfect spherical shape with narrow size distribution (average size ca. 600 nm), are not agglomerated, and have a smooth surface. The thickness of the Gd₂MoO₆:Eu³⁺ shells on the SiO₂ cores could be easily tailored by varying the number of deposition cycles (50 nm for four deposition cycles). The Eu³⁺ shows a strong PL luminescence (dominated by ⁵D₀-⁷F₂ red emission at 613 nm) under the excitation of 307 nm UV light. The PL intensity of Eu³⁺ increases with increasing the annealing temperature and the number of coating cycles.     

Judd-Ofelt analysis of luminescence emission from Zn2SiO4:Eu nanoparticles obtained by a polymer-assisted sol-gel method

In this research we prepared Zn₂SiO₄:Eu³⁺ phosphor nanopowders using a combination of sol-gel and combustion synthesis with the aim to examine the influence of synthesis conditions on the optical properties of the phosphor. As combustion fuels we used polyethylene glycol (PEG) with different average molecular weights, and the combustion was performed in two ways—in a microwave oven and a conventional furnace. Optical properties were examined by photoluminescence spectroscopy and spectra of all samples showed intense red emission, typical for f-f electronic transitions of the Eu³⁺ ions. Emission decays exhibited classical one exponential behavior at longer times and nonlinear nature at short times, with average lifetimes varied from 0.49 to 0.71 ms between samples. Judd-Ofelt theory was applied to experimental data for the quantitative determination of optical parameters such as Ω_2,4 Judd-Ofelt parameters, radiative and nonradiative transition rates and emission quantum efficiency. Calculated parameters vary moderately between samples prepared with different PEGs and combusted in different manner.     

Thermally stable deep-blue Ba1.2Ca0.8SiO4:Ce phosphor for white-light-emitting diode

A novel deep-blue phosphor, Ba_1.2Ca_0.8SiO₄:Ce³⁺, has been developed for white-light-emitting diodes. The phosphor exhibits two absorption bands at 280 and 325 nm, and an intense deep-blue emission peaking at 400 nm. With increasing Ce/Li concentrations, the lattice expands, and the emission peak is blueshifted. This correlation is explained in terms of the crystal field effect and the configurational coordinate diagram. This phosphor shows much higher thermal quenching temperature (225 °C) due to a weak electron-phonon interaction. Thus, it can be used as a sensitizer phosphor to excite other green or red phosphors, or a promising deep-blue phosphor for white-light-emitting diodes.     

Photoluminescence characterization of Ce and Dy doped Li2CaGeO4 phosphors

Ce³⁺ and Dy³⁺ activated Li₂CaGeO₄ phosphors were prepared by a solid-state reaction method, and characterized by XRD (X-ray diffraction) and photoluminescence techniques. The characteristic emission bands of Dy³⁺ due to ⁴F_9/2→⁶H_15/2 (blue) and ⁴F_9/2→⁶H_13/2 (yellow) transitions were detected in the emission spectra of Li₂CaGeO₄:Dy³⁺. Ce³⁺ broad band emission was observed in Li₂CaGeO₄:Ce³⁺ phosphors at 372 and 400 nm due to 5d→4f transition when excited at 353 nm. Co-doping of Ce³⁺ enhanced the luminescence of Dy³⁺ significantly and concentration quenching occurs when Dy³⁺ is beyond 0.04 mol%. White-light with different hues can be realized by tuning Dy³⁺ concentration in the phosphors.     

新型光存储材料Sr2SnO4: Tb3+, Li+ 的合成及其红外上转换光激励发光性能的研究

采用高温固相法获得了一种只具有 微弱余辉的新型电子俘获型光存储材料Sr₂SnO₄:Tb^{3 +}, Li ⁺. 发光性能研究结果表明: 该材料对980 nm的红外激光具有很好的上转换光激励信息读出响应, 同时292 nm紫外光为其最佳信息写入光源. 光存储性能研究结果表明: 该材料的浅陷阱较少, 因此其余辉发光很弱, 不到500 s; 另一方面, 该材料中存在大量的深蓄能陷阱. 因此, Sr₂SnO₄: Tb^{3 +}, Li⁺是一种具有较好实际应用价值的新型电子俘获型光存储材料. 此外, 还讨论了Sr₂SnO₄: Tb^{3 +}, Li⁺的光存储发光机理.     

Electronic energy relaxation and luminescence decay dynamics of Eu in Zn2SiO4:Eu phosphors

Electronic energy relaxation and decay dynamics of Eu³⁺ in Zn₂SiO₄:Eu³⁺ phosphors display evidence of intra-ion energy transfer from the ⁵D₁ to the ⁵D₀ manifold. The energy transfer timescale does not depend on Eu³⁺ concentration, or the addition of Mn²⁺ as a co-dopant and is estimated to be about 11 μs in Zn₂SiO₄. Evidence for intra-ion Eu³⁺ electronic energy transfer has also been observed in Eu-doped MgS as well as Eu³⁺ encapsulated in zeolite-Y. The energy transfer timescale in these other materials is shorter than in Zn₂SiO₄, most likely due to differences in Eu³⁺ surroundings or site symmetry.     

Synthesis and properties of colloidal ternary ZnGa2O4:Eu nanocrystals

A nonhydrolytic hot solution synthesis technique was used to grow monodisperse ternary oxide nanocrystals of ZnGa₂O₄:Eu³⁺. The shape of ZnGa₂O₄:Eu³⁺ nanocrystals was a function of the type of precursor, and their size was controlled by changing the concentration ratio of Zn precursor to surfactant. The crystal structure of synthesized ZnGa₂O₄ nanocrystals was a cubic spinel with no detectable secondary phases. Photoluminescence of red-emitting ZnGa₂O₄:Eu³⁺ nanocrystals resulted in a high (⁵D₀-⁷F₂)/(⁵D₀-⁷F₁) intensity ratio, suggesting that the Eu³⁺ ions occupy tetrahedral Zn²⁺ sites or distorted octahedral Ga³⁺ sites with no inversion symmetry in ZnGa₂O₄ nanocrystals.     

Synthesis and characterization of axially periodic Zn2SnO4 dendritic nanostructures

Zn2SnO4 （ZTO） nanowires with a unique dendritic nanostructure were synthesized via a simple one-step thermal evaporation and condensation process. The morphology and microstructure of the ZTO nanodendrite have been investigated by means of field emission scanning electron microscopy （SEM）, x-ray diffraction （XRD） and high-resolution transmission electron microscopy （HRTEM）. SEM observation revealed the formation of branched nanostructures and showed that each branch exhibited a unique periodic structure formed by a row of overlaid rhombohedra of ZTO nanocrystals along the axis of the nanobranch. HRTEM studies displayed that the branches grew homoepitaxially as single-crystalline nanowires from the ZTO nanowire backbone. A possible growth model of the branched ZTO nanowires is discussed. To successfully prepare branched structures would provide an opportunity for both fundamental research and practical applications, such as three-dimensional nanoelectronics, and opto-electronic nanodevices.     

Synthesis of Gd2Ti2O7:Eu, V phosphors by sol-gel process and its luminescent properties

A red-emitting phosphor material, Gd₂Ti₂O₇:Eu³⁺, V⁴⁺, by added vanadium ions is synthesized using the sol-gel method. Phosphor characterization by high-resolution transmission electron microscopy shows that the phosphor possesses a good crystalline structure, while scanning electron microscopy reveals a uniform phosphor particle size in the range of 230-270 nm. X-ray photon electron spectrum analysis demonstrates that the V⁴⁺ ion promotes an electron dipole transition of Gd₂Ti₂O₇:Eu³⁺ phosphors, causing a new red-emitting phenomenon, and CIE value shifts to x=0.63, y=0.34 (a purer red region) from x=0.57, y=0.33 (CIE of Gd₂Ti₂O₇:Eu³⁺). The optimal composition of the novel red-emitting phosphor is about 26% of V⁴⁺ ions while the material is calcinated at 800  °C. The results of electroluminescent property of the material by field emission experiment by CNT-contained cathode agreed well with that of photoluminescent analysis.