Long lasting phosphorescent properties of Ti doped ZrO2

A novel long-lasting afterglow phosphor ZrO₂:Ti is prepared by the conventional solid-stated method and their luminescent properties are investigated. A bluish white strong and broad emissive band, which is attributed to originate from the recombination of electrons trapped by F⁺ centers and the holes created in Valence band, is observed under 254 nm UV irradiation. The identical color long afterglow, which lasts about 1 h, is found in the ZrO₂:Ti phosphor after removing the 254 nm UV light. The mechanism of the long lasting phosphorescence (LLP) has been discussed based on the thermoluminescence (TL) results. The replacement of Zr by Ti produces more anion vacancies, resulting in the enhanced photoluminescence (PL) and LLP of ZrO₂:Ti sample. These results indicate that ZrO₂:Ti phosphor has potential promising applications.     

Preparation and photoluminescent properties of Ni-doped ZrO2 fibers

Ni²⁺-doped ZrO₂ precursor fibers were prepared via sol-gel technique by dry-spinning method and then heat-treated at different temperatures. The surface of the fibers is smooth with uniform diameter and no cracks have been observed by scanning electron microscopy (SEM). The emission intensity reaches a maximum value at 1 mol% Ni²⁺ because of the concentration quenching. The photoluminescence (PL) relative intensity is apparently intensifying with increasing temperature before 700 °C due to the crystallinity of the ZrO₂ lattice improvement. The PL results show that the typical emission center is at 510 nm excited at 315 nm.     

A study of the effect of ZrO2 on the magnetic properties of FePt/ZrO2 multilayer

Fe_xPt_100−x(30 nm) and [Fe_xPt_100−x(3 nm)/ZrO₂]₁₀ (x = 37, 48, 57, 63, 69) films with different ZrO₂ content were prepared by RF magnetron sputtering technique, then were annealed at 550 °C for 30 min. This work investigates the effect of ZrO₂ doping on the microstructural evolution, magnetic properties, grain size, as well as the ordering kinetics of FePt alloy films. The as-deposited films behaved a disordered state, and the ordered L1₀ structure was obtained by post-annealing. The magnetic properties of the films are changed from soft magnetism to hard magnetism after annealing. The variation of the largest coercivities of [Fe_xPt_100−x/ZrO₂]₁₀ films with the Fe atomic percentage, x and differing amounts of ZrO₂ content reveals that as we increase the ZrO₂ content we must correspondingly increase the amount of Fe. This phenomenon suggests that the Zr or O atoms of ZrO₂ preferentially react with the Fe atoms of FePt alloy to form compounds. In addition, introducing the nonmagnetic ZrO₂ can reduce the intergrain exchange interactions of the FePt/ZrO₂ films, and the interactions are decreased as the ZrO₂ content increases, the dipole interactions are observed in FePt/ZrO₂ films as the ZrO₂ content is more than 15%.     

Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium

The impact of the ZrO₂/La₂O₃ film thickness ratio and the post deposition annealing in the temperature range between 400 °C and 600 °C on the electrical properties of ultrathin ZrO₂/La₂O₃ high-k dielectrics grown by atomic layer deposition on (1 0 0) germanium is investigated. As-deposited stacks have a relative dielectric constant of 24 which is increased to a value of 35 after annealing at 500 °C due to the stabilization of tetragonal/cubic ZrO₂ phases. This effect depends on the absolute thickness of ZrO₂ within the dielectric stack and is limited due to possible interfacial reactions at the oxide/Ge interface. We show that adequate processing leads to very high-k dielectrics with EOT values below 1 nm, leakage current densities in the range of 0.01 A/cm², and interface trap densities in the range of 2-5 × 10¹² eV⁻¹ cm⁻².     

Visible light-sensitive MnO2- and CeO2-loaded ZrO2/carbon cluster/Pt nanocomposite materials

Nano-sized ZrO₂/carbon cluster composite materials (I_c’s) were successfully prepared by the calcination of ZrOCl₂/starch complex I. I_c’s were found to reduce methylene blue under the irradiation of visible light (λ > 460 nm). The materials obtained by calcining at 400 and 500 °C were selectively loaded with Pt particles to obtain Pt-loaded ZrO₂/carbon cluster composite materials denoted as I_c400Pt and I_c500Pt, respectively. In addition, the resultant materials were modified with MnO₂ and CeO₂ particles to achieve MnO₂- and CeO₂-loaded ZrO₂/carbon cluster/Pt composite materials denoted as I_c400PtMn, I_c500PtMn, I_c400PtCe and I_c500PtCe, respectively. The metal oxides-loaded ZrO₂/carbon cluster/Pt composite materials thus synthesized could decompose an aqueous silver nitrate solution by visible light irradiation to give Ag and O₂ with the [Ag]/[O₂] ratios of ca. 4. Visible light-irradiated water splitting examinations with I_c400PtMn and I_c400PtCe were also investigated and found to yield H₂ and O₂ with the [H₂]/[O₂] ratios of ca. 2.     

Elasticity, electronic structure, chemical bonding and optical properties of monoclinic ZrO2 from first-principles

Structural parameters as well as elastic, electronic, bonding and optical properties of monoclinic ZrO₂ were investigated using the plane-wave ultrasoft pseudopotential technique based on the first-principles density-functional theory (DFT). The calculated structural properties and independent elastic constants of monoclinic ZrO₂ are in favorable agreement with previous work. We have derived the bulk and shear moduli, Young’s modulus and Poisson coefficients for monoclinic ZrO₂ and estimated the Debye temperature of monoclinic ZrO₂ from acoustic velocity. Electronic and bonding properties are studied from the calculation of band structure, densities of states and charge densities. Furthermore, in order to clarify the mechanism of optical transitions in monoclinic ZrO₂, the dielectric functions are calculated and analyzed by means of the electronic structure, which shows significant optical anisotropy in the components of polarization directions (1 0 0), (0 1 0) and (0 0 1).     

Effect of UV lamp irradiation during oxidation of Zr/Pt/Si structure on electrical properties of Pt/ZrO2/Pt/Si structure

Metal-insulator-metal (MIM) capacitors were fabricated using ZrO₂ films and the effects of structural and native defects of the ZrO₂ films on the electrical and dielectric properties were investigated. For preparing ZrO₂ films, Zr films were deposited on Pt/Si substrates by ion beam deposition (IBD) system with/without substrate bias voltages and oxidized at 200 °C for 60 min under 0.1 MPa O₂ atmosphere with/without UV light irradiation (λ = 193 nm, Deep UV lamp). The ZrO₂(∼12 nm) films on Pt(∼100 nm)/Si were characterized by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HRTEM), capacitance-voltage (C-V) and current-voltage (I-V) measurements were carried out on MIM structures. ZrO₂ films, fabricated by oxidizing the Zr film deposited with substrate bias voltage under UV light irradiation, show the highest capacitance (784 pF) and the lowest leakage current density. The active oxygen species formed by UV irradiation are considered to play an important role in the reduction of the leakage current density, because they can reduce the density of oxygen vacancies.     

Preparation of sol-gel ZrO2-SiO2 highly reflective multilayer films and laser-induced damage threshold characteristic

Sol-gel (ZrO₂/SiO₂)¹² ZrO₂ films were prepared by spin coating method. The reflectivity spectrum of the films was measured with a Lambda 900 spectrometer. In order to investigate laser-induced damage threshold (LIDT) characteristic of highly reflective films, one-layer ZrO₂ and SiO₂ films, two-layer ZrO₂/SiO₂ and SiO₂/ZrO₂ films were also prepared by spin coating method. LIDT of each film was measured. Damage morphology after laser irradiation was characterized by optical microscopy (Nikon E600K). The experimental results showed that the reflectivity of (ZrO₂/SiO₂)¹² ZrO₂ film at 1064 nm and 355 nm wavelength is 99.7%. The LIDT results decreases as the number of layer of films increases. All the films have similar damage morphology. The experimental results are explained by the different temperature profiles of the films.     

Preparation and luminescence properties of Tb doped ZrO2 and BaZrO3 phosphors

ZrO₂:Tb³⁺ and BaZrO₃:Tb³⁺ powders are prepared by combustion synthesis method and the samples were further heated to 500, 700 and 1000 °C to improve the crystallinity of the materials. The structure and morphology of materials have been examined by X-ray diffraction, Raman spectra and scanning electron microscopy. It is remarkable that all the samples of ZrO₂:Tb³⁺ and BaZrO₃:Tb³⁺ have similar morphology. These images exhibited homogeneous aggregates of varying shapes and sizes, which are composed of a large number of small cuboids and broken cuboids. The cuboids and broken cuboids size of all the samples are less than 0.5 μm. Photoluminescence for both materials increases with increase of temperature and found maximum for the samples heated to 1000 °C with 5 mole% doping of Tb³⁺ ions. Luminescence is almost double for the zirconia compared to that of barium-zirconate.     

Study of phase transition in ZrO2 doped with Pb3O4

Electrical conductivity of ZrO₂ doped with Pb₃O₄ has been measured at different temperatures for different molar ratios (x=0, 0.01, 0.02, 0.03, 0.04, 0.05 and 0.06). The conductivity increases due to migration of vacancies, created by doping. The conductivity increases with increase in temperature till 180 °C and thereby decreases due to collapse of the fluorite framework. A second rise in conductivity at higher temperatures beyond 500-618 °C is due to phase transition of ZrO₂. DTA and X-ray powder diffraction were carried out for confirming doping effect and transition in ZrO₂.The addition of Pb₃O₄ to ZrO₂ shifted the phase transition of ZrO₂ due to the interaction between Pb₃O₄ and ZrO₂.     

Proton and electron irradiation induced changes in the optical properties of ZnO pigments modified with ZrO2 and Al2O3 nanopowders

The effect of the modification of ZnO powders by ZrO₂ and Al₂O₃ nanoparticles with a concentration of 1–30 wt % is investigated by diffuse reflectance spectra within the wavelength range 0.2 to 2.5 μm before and after 100 keV proton and electron irradiation. It has been established that the introduction of nanoparticles enhances the optical stability of the pigments under proton irradiation, but reduces it under electron irradiation. Samples modified by 5 wt % of ZrO₂ nanoparticles have the highest stability of optical properties after proton exposure. The degradation of optical properties under electron irradiation is not high for this concentration of nanoparticles. A decrease in the absorption of pigments modified with nanoparticles after proton exposure is determined by a decrease in the intensity of bands located in the UV and visible regions. After electron exposure the absorption bands have a high intensity in the whole spectrum range.     

Texture development and magnetic properties of [ZrO2/CoPt]n/Ag nanocomposite films

The L1₀ CoPt films with (0 0 1) preferred orientation are achieved by fabricating on the glass substrates and post annealing at 600° C for 30 min. The preferred orientation of [ZrO₂/CoPt]_n/Ag films dependence of the Ag underlayer thickness, ZrO₂ and CoPt interlayer thickness is investigated. A large perpendicular magnetic anisotropy and a nearly perfect L1₀ CoPt (0 0 1) texture are obtained in the [ZrO₂ (3 nm)/CoPt (5 nm)]₃/Ag (10 nm) film. The existence of ZrO₂ plays an important role in reducing the intergranular interactions and in determining the size of CoPt grains. Magnetic reversal in textured CoPt films are close to a Stoner-Wolfarth rotation.     

Effects of annealing temperature on the structural and photoluminescence properties of nanocrystalline ZrO2 thin films prepared by sol-gel route

Highly transparent nanocrystalline zirconia thin films were prepared by the sol-gel dip coating technique. XRD pattern of ZrO₂ thin film annealed at 400 °C shows the formation of tetragonal phase with a particle size of 13.6 nm. FT-IR spectra reveal the formation of Zr-O-Zr and the reduction of OH and other functional groups as the temperature increases. The transmittance spectra give an average transmittance greater than 80% in the film of thickness 262 nm. Photoluminescence (PL) spectra give intense band at 391 nm and a broad band centered at 300 nm. The increase of PL intensity with elevation of annealing temperature is related to reduction of OH groups, increase in the crystallinity and reduction in the non-radiative related defects. The luminescence dependence on defects in the film makes it suitable for luminescent oxygen-sensor development. The “Red shift” of excitation peak is related to an increase in the oxygen content of films with annealing temperature. The “Blue shift” of PL spectra originates from the change of stress of the film due to lattice distortion. The defect states in the nanocrystalline zirconia thin films play an important role in the energy transfer process.     

Mesoporous (ZrO2-TiO2)/Al2O3 ternary carriers as hydrodesulfurization catalysts support

Ternary systems at various compositions were synthesized by coprecipitating Zr and Ti (to get a ZrO₂-TiO₂ 40-60 mol%) chlorides in aqueous basic media (provided by urea thermal decomposition) over an alumina substrate. Materials characterization included N₂ physisorption, X-ray diffraction, thermal analysis, high-resolution electron microscopy and Raman and UV-vis spectroscopies. High interaction among components was clearly evidenced by various techniques. Textural properties of ternary oxides could be tuned depending on composition of formulations. Mixed oxides with 10 or 20 mol% of ZrO₂-TiO₂ (at 40-60% mol, in turn) had the most suitable combination of textural properties (surface area, average pore diameter and pore volume) for the intended application (support of catalyst for hydrodesulfurization de oil-derived middle distillates). The suitability of those ternary supports was demonstrated in the dibenzothiophene hydrodesulfurization where the corresponding supported MoS₂ catalysts (at 2.8 atom Mo nm⁻²) were much more active (on a per mass of catalyst basis) than when impregnated over either alumina or zirconia-titania oxides.     

Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric

La₂O₃ grown by atomic layer deposition (ALD) and thermally grown GeO₂ are used to establish effective electrical surface passivations on n-type (1 0 0)-Ge substrates for high-k ZrO₂ dielectrics, grown by ALD at 250 °C substrate temperature. The electrical characterization of MOS capacitors indicates an impact of the Ge-surface passivation on the interfacial trap density and the frequency dependent capacitance in the inversion regime. Lower interface trap densities can be obtained for GeO₂ based passivation even though a chemical decomposition of the oxidation states occur during the ALD of ZrO₂. As a consequence the formation of a ZrGeO_x compound inside the ZrO₂ matrix and a decline of the interfacial GeO₂ are observed. The La₂O₃ passivation provides a stable amorphous lanthanum germanate phase at the Ge interface but also traces of Zr germanate are indicated by X-ray-Photoelectron-Spectroscopy and Transmission-Electron-Microscopy.     

The comparison of photocatalytic activity of synthesized TiO2 and ZrO2 nanosize onto wool fibers

TiO₂ and ZrO₂ nanocrystals were successfully synthesized and deposited onto wool fibers using the sol-gel technique at low temperature. The photocatalytic activities of TiO₂-coated and ZrO₂-coated wool fibers were measured by studying photodegradation of methylene blue and eosin yellowish dyes. The initial and the treated samples were characterized by several techniques such as scanning electron microscopy (SEM), transmission electron microscopy (TEM), diffuse reflectance spectroscopy (DRS) and X-ray diffraction. The TEM study shows dispersed particles with 10-30 nm in size for TiO₂-coated and 20-40 nm in size for ZrO₂-coated samples on the fiber surface. Comparison of the photocatalytic activity of the coated samples reveals superiority of TiO₂ modified sample with respect to that of ZrO₂ for degradation of both dyes. Our observations indicate that by applying this technique to the fabrics, self-cleaning materials could be designed for practical application.     

Effect of concentration on the luminescence of Eu ions in nanocrystalline La2O3

Nanocrystalline powders with various Eu³⁺ concentration (from 1 to 10 mol %) doped La₂O₃ were prepared via a combustion route. Their structure and morphology were characterized using X-ray diffraction (XRD) and High-resolution transmission electron microscopy. The emission spectra of the as-synthesized samples show that the strongest emission position is centered at 626 nm corresponding to ⁵D₀→⁷F₂ transition of Eu³⁺ ions and the intensity change of 626 nm emission is considered as a function of ultraviolet (240 nm) irradiation time. The excitation spectra at 626 nm monitoring indicate that the charge transfer state band is varies with different Eu³⁺ ion concentration. These results are attributed to the surface defects of the nanocrystals.     

Influence of MgO and ZrO2 buffer layers on dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel processing

Ba(Zr_0.20Ti_0.80)O₃ (BZT) thin films are deposited on Pt(1 1 1)/Ti/SiO₂/Si, MgO and ZrO₂ buffered Pt(1 1 1)/Ti/SiO₂/Si substrates by a sol-gel process. The BZT thin films directly grown on Pt(1 1 1)/Ti/SiO₂/Si substrates exhibit highly (1 1 1) preferred orientation, while the films deposited on Pt(1 1 1)/Ti/SiO₂/Si substrates with MgO and ZrO₂ buffer layers show highly (1 1 0) preferred orientation. At 100 kHz, dielectric constants are 417, 311 and 321 for the BZT thin films grown on Pt(1 1 1)/Ti/SiO₂/Si, MgO and ZrO₂ buffered Pt(1 1 1)/Ti/SiO₂/Si substrates, respectively. The difference in dielectric properties of three BZT films can be attributed to the series capacitance effect, interface conditions and their orientations.     

Effect of the dispersibility of ZrO2 nanoparticles in Ni-ZrO2 electroplated nanocomposite coatings on the mechanical properties of nanocomposite coatings

ZrO₂ nanoparticles was uniformly co-deposited into a nickel matrix by electroplating of nickel from a Watts bath containing particles in suspension which were monodispersed with dispersant under DC electrodeposition condition. It was found that morphology, orientation and hardness of the nanocomposite coatings with monodispersed ZrO₂ nanoparticles had lots of difference from the nanocomposite coatings with agglomerated ZrO₂ nanoparticles and pure nickel coatings. Especially, the result of hardness showed that only a very low volume percent (less than 1 wt.%) of monodispered ZrO₂ nanoparticles in Ni-ZrO₂ nanocomposite coatings would result in higher hardness of the coatings. The hardness of Ni-ZrO₂ nanocomposite coatings with monodispersed and agglomerated ZrO₂ nanoparticles were 529 and 393 HV, respectively. The hardness value of the former composite coatings was over 1.3 times higher than that of the later. All these composite coatings were two-three times higher than that of pure nickel plating (207 HV) prepared under the same condition. The strengthening mechanisms of the Ni-ZrO₂ nanocomposite coatings based on a combination of grain refinement strengthening from nickel matrix grain refining and dispersion strengthening from dispersion state of ZrO₂ nanoparticles in the coatings.     

Optical thermometry through green and red upconversion emissions in Er/Yb/Li:ZrO2 nanocrystals

Variations of fluorescence intensity ratio of green (generated from Er^{3+ 2}H_11/2 and ⁴S_3/2 levels) and red (generated from the sublevels of Er^{3+ 4}F_9/2 level) upconversion emissions in Er³⁺/Yb³⁺/Li⁺:ZrO₂ nanocrystals have been studied as a function of temperature under 976 nm laser diode excitation. In the temperature range of 323-673 K, the maximum sensitivities of about 0.0134 K^− 1 and 0.0104 K^− 1 are obtained by using green and red emission, respectively. Er³⁺/Yb³⁺/Li⁺:ZrO₂ nanocrystals show potential application value in nanoscale thermal sensor.