Thermoluminescence and photoluminescence studies on gamma irradiated CsI: Pb2+ crystals

Pure and Pb²⁺-doped CsI crystals have been grown by the Bridgemann technique. Optical absorption, thermoluminescence (TL) and photoluminescence (PL) measurements have been performed. In undoped and Pb²⁺-doped cesium iodide crystals, F-centers and V-centers have been produced at 770 nm and 350 nm, respectively. In Pb²⁺-doped crystals, additional centers at 373 nm, 290 nm and 258 nm bands have been produced. In undoped samples, only two glow peaks at 343 K and 373 K have been produced, and in Pb²⁺-doped samples additional glow peaks at 383 K and 423 K have been produced. For all the samples, TL emission, PL and excitation measurements have been performed.     

Thermoluminescence in single crystals of RbBr:OH− and RbBr:Ca2+

Optical absorption, thermoluminescence glow and emission spectra of RbBr:Ca²⁺ and RbBr:OH⁻ have been studied and analysed. It is observed that both Ca²⁺ and OH⁻ ions enhance theF-centre concentration.F _Z1 band in RbBr:Ca²⁺ appears at 1.55 eV. TL glow peak corresponding toF _Z1 centre on analysis gives a trap depth of 0.84 eV. OH⁻ ions in the crystal seem to act as TL ‘killers’. Spectral distribution of emission under the glow peaks shows five bands around 1.5, 1.8, 2.1, 2.5 and 2.9 eV. Probable models of TL mechanism are suggested to explain the observed TL emission bands.     

Photoluminescence and EPR studies on gamma irradiated Ce doped potassium halide single crystals

Electron Paramagnetic Resonance(EPR), Photoluminescence(PL), Thermoluminescence (TL) and other optical studies of γ-irradiated KBr, KCl:Ce³⁺ single crystals. Cerium when doped into the KBr, KCl is found to enter the host lattice in its trivalent state and act as electron trap during γ-irradiation, thereby partially converting itself to Ce²⁺. The Photoluminescence(PL) spectra of both KCl and KBr crystals doped with Ce exhibit the strong blue emissions of Ce corresponding to ⁵d(²D)→²F_5/2 and ⁵d(²D)→²F_7/2 transitions. The defect centers formed in the Ce³⁺ doped KBr and KCl. Crystals are studied using the technique of EPR. A dominant TL glow peak at 374, 422 K and KCl:Ce³⁺ at 466, 475 K is observed in the crystal. EPR studies indicate the presence at two centers at room temperature. Spectral distribution under the thermoluminescence emission(TLE) and optically stimulated emission(OSL) support the idea that defect annihilation process to be due to thermal release of F electron in KBr, KCl:Ce³⁺ crystals. Both Ce³⁺ and Ce²⁺ emissions were observed in the thermoluminescence emission of the crystals.     

Growth and optical properties of Yb and Tb codoped BaB2O4 crystals

Optical absorption and luminescence spectra of ytterbium and terbium codoped BaB₂O₄ (β-BBO and α-BBO) crystals grown in different conditions have been studied. Low-temperature absorption peaks were observed in all samples. Features related to rare earth ions were observed in absorption and luminescence spectra. Absorption and emission in the range 860-1000 nm are caused by ²F_5/2↔²F_7/2 transitions in Yb³⁺ ions. Emission peaks at 500, 550, 590 and 630 nm correspond to ⁵D₄→⁷F₆, ⁷F₅, ⁷F₄, and ⁷F₃ transitions of Tb³⁺ ions, respectively. The probable reasons of variations in spectroscopic features related to Yb in BBO host are discussed. It has been shown that the replacement of Ва²⁺ by Yb³⁺ in the lattice of ВаВ₂О₄ results in the decrease in the symmetry of oxygen surrounding of Yb³⁺.     

Preparation and luminescence properties of Tb doped ZrO2 and BaZrO3 phosphors

ZrO₂:Tb³⁺ and BaZrO₃:Tb³⁺ powders are prepared by combustion synthesis method and the samples were further heated to 500, 700 and 1000 °C to improve the crystallinity of the materials. The structure and morphology of materials have been examined by X-ray diffraction, Raman spectra and scanning electron microscopy. It is remarkable that all the samples of ZrO₂:Tb³⁺ and BaZrO₃:Tb³⁺ have similar morphology. These images exhibited homogeneous aggregates of varying shapes and sizes, which are composed of a large number of small cuboids and broken cuboids. The cuboids and broken cuboids size of all the samples are less than 0.5 μm. Photoluminescence for both materials increases with increase of temperature and found maximum for the samples heated to 1000 °C with 5 mole% doping of Tb³⁺ ions. Luminescence is almost double for the zirconia compared to that of barium-zirconate.     

ESR studies of Cu2+ doped in triglycine calcium bromide single crystals

Electron spin resonance studies were carried out on Cu²⁺ doped triglycine calcium bromide. The spectra recorded at room temperature revealed well-resolved hyperfine spectra of⁶³Cu superposed with super-hyperfine lines due to¹⁴N nuclei. The spin Hamiltonian parameters are evaluated. It was concluded that the Cu²⁺ enters the lattice interstitially.     

Studies on some mixed pyrido-phenol donor ligands as sensitisers for terbium (III)

Incorporation of the 2-(2-hydroxyphenyl)-pyridine system into aza-crown systems produces novel ligands for lanthanide ions and can act as sensitising antennae for terbium (III) ions.     

Green photoluminescence, but blue afterglow of Tb activated Sr4Al14O25

Tb³⁺ activated Sr₄Al₁₄O₂₅ phosphors were synthesized by the high temperature solid-state reaction. For the sample, the color of the photoluminescence (PL) was green, but that of the afterglow was blue. The spectral results indicated that the photoluminescence was mainly due to the transitions from ⁵D₄ to the ground energy levels of Tb³⁺ and obeyed the cross-relaxation mechanism; however, the afterglow was derived from the transitions from ⁵D₃ and independent with the concentration of Tb³⁺. This difference was attributed to the reason that the energy transfer process of cross-relaxation was halted by the traps during the period of afterglow.     

Heat-treatment-induced luminescence degradation in Tb-doped CePO4 nanorods

CePO₄:Tb nanorods were synthesized via a simple wet-chemical route. The as-synthesized CePO₄:Tb nanorods present high photoluminescence efficiency due to an efficient energy transfer form Ce³⁺ to Tb³⁺. However, heat treatment at 150 °C in air leads to a significant decrease of photoluminescence. X-ray photoelectron spectroscopy and excitation spectra revealed the oxidation of Ce³⁺ to Ce⁴⁺ in the heat-treatment process, which should be responsible for significant photoluminescence degradation due to the breakage of Ce³⁺→Tb³⁺ energy transfer. This conclusion is further supported by atmosphere and size effects of photoluminescence of CePO₄:Tb under the heat treatment.     

Thermoluminescence and thermal properties of rare-earth-ion-activated YAG crystals

The paper contains results of studies of repeated thermoluminescence of yttrium-aluminum garnet (YAG) crystals (Y_3−xLn_xAl₅O₁₂, x=0, 2) activated by rare earth ions (Pr³⁺, Nd³⁺, Tb³⁺, Dy³⁺, Ho³⁺, Er³⁺) previously exposed to⁶⁰Co γ-radiation at 77 K and subjected to many cooling-heating cycles. A possible mechanism of repeated thermoluminescence is considered from the viewpoint of a dynamic evolutionary approach. The thermal conductivity of YAG-TR³⁺ crystals (TR³⁺: Gd³⁺, Tb³⁺, Dy³⁺, Er³⁺, Tm³⁺, and Lu³⁺) is studied to establish its relation with repeated thermoluminescence. Presented at the National Conference on Molecular Spectroscopy, Samarkand (Uzbekistan), September 25–27, 1996. Samarkand State University, 15, University Blvd., 703004, Samarkand, Republic of Uzbekistan. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 1, pp. 137–140, January–February, 1998.     

Some studies of BF2 and B+F implanted Silicon

Ion-implanted shallow junctions have been investigated using BE₂ (molecular ions) by the anodic oxidation method coupled with a four-point probe technique. BF₂ ions were implanted through screen oxide at doses of 3–5 × 10¹⁵ ions/cm² and energies of 25 and 45 keV which is equivalent to 5.6 keV and 10 keV of boron ions. The effect of energy, dose and annealing temperature on shallow junctions is presented in this paper. The shallow junctions in the range of 0.19 μm to 0.47 μm were fabricated.

The effect of fluorine on sheet resistivity of boron implanted silicon at various doses, treated with two-step and three-step annealing, is also presented for comparison in the paper.     

Solvothermal synthesis and luminescence properties of Tb-doped gadolinium aluminum garnet

Different concentrations of Tb³⁺ ion-doped gadolinium aluminum garnet (GAG) nanophosphors have been synthesized by solvothermal reaction method and sintered at 1300 °C. The XRD patterns confirm that the GAG phosphors sintered at 1300 °C have a garnet structure with single cubic phase. The calculated crystallite size is about 92 nm. The SEM images of the phosphors show the spherical morphology agglomerated with many small particles. The luminescence properties of these phosphors have been carried out by the emission and excitation spectra along with lifetime measurements. The excitation spectra of GAG:Tb³⁺ phosphors consist of three broad bands due to the 4f⁸→4f⁷5d¹ transition and some sharp peaks due to the 4f⁸→4f⁸ transition. The emission spectra of the phosphors reveal two colors, such as blue due to ⁵D₃→⁷F_J transitions and green due to the ⁵D₄→⁷F_J transitions. The dynamics of the phosphors have been investigated by decay curves and the cross-relaxation process and is observed at 0.5 mol% Tb³⁺ concentration.     

Luminescent characteristics of LiCaBo3:M (M=Eu, Sm, Tb, Ce, Dy) phosphor for white LED

LiCaBO₃:M (M=Eu³⁺, Sm³⁺, Tb³⁺, Ce³⁺, Dy³⁺) phosphors were synthesized by a normal solid-state reaction using CaCO₃, H₃BO₃, Li₂CO₃, Na₂CO₃, K₂CO₃, Eu₂O₃, Sm₂O₃, Tb₄O₇, CeO₂ and Dy₂O₃ as starting materials. The emission and excitation spectra were measured by a SHIMADZU RF-540 UV spectrophotometer. And the results show that these phosphors can be excited effectively by near-ultraviolet light-emitting diodes (UVLED), and emit red, green and blue light. Consequently, these phosphors are promising phosphors for white light-emitting diodes (LEDs). Under the condition of doping charge compensation Li⁺, Na⁺ and K⁺, the luminescence intensities of these phosphors were increased.     

Optical and structural characterization of KBr crystals doped cadmium bromide (CdBr2)

In this paper we demonstrate the presence of CdBr₂ and cadmium aggregates in KBr matrix during Czochralski growth of KBr crystals. The chemical decomposition of CdBr₂ due to high temperature of crystallisation and reformation of cadmium bromide seems to be responsible for this effect.     

Thermoluminescence and opitical absorption of BaF2 crystals

Abstract

Nominally pure and Dy-doped BaF₂ crystals were investigated concerning their optical absorption (OA) and thermoluminescence (TL) properties. Peaks at 120—150 and 200°C were observed for a heating rate of 1.7°C/s. The TL response for γ-rays and the TL emission spectra were obtained for these peaks. Except for the purest crystal, all BaF₂ crystals produced OA bands before irradiation typical of Ce³⁺ ions. After irradiation, Dy doped crystals showed bands due to Dy²⁺ ions. A nominally pure sample gave bands related to Ce²⁺ ions and photochromic centers of Ce³⁺ ions. and photochromic centres of Ce³⁺ ions. The correlation between some OA bands and TL peaks is discussed.     

Intense ultraviolet upconversion luminescence of Yb and Tb co-doped glass ceramics containing SrF2 nanocrystals

The preparation and upconversion luminescence properties of the Yb³⁺ and Tb³⁺ co-doped glass ceramics containing SrF₂ nanocrystals were investigated. The formation of SrF₂ nanocrystals was confirmed by X-ray diffraction and transmission electron microscopy. Both microstructural and spectral analysis indicated that the Yb³⁺ and Tb³⁺ ions were enriched in the precipitated SrF₂ nanocrystals, which provide much lower phonon vibration energy than the glass matrix. Due to the efficient cooperative sensitization from Yb³⁺ to Tb³⁺ and the relatively low maximum phonon energy of SrF₂ nanocrystals, the Yb³⁺ and Tb³⁺ co-doped glass ceramics exhibited intense upconversion luminescence, including ultraviolet emission at 382 nm.     

Specific features of photo and thermoluminescence of Tb ions in BaO-M2O3 (M=Ga, Al, In)-P2O5 glasses

BaO-P₂O₅ glasses mixed with the three metal oxides viz., Al₂O₃, Ga₂O₃ and In₂O₃ doped with Tb₂O₃ were prepared. The glasses were characterized by X-ray diffraction and differential thermal analysis. Optical absorption and photoluminescence spectra and thermoluminescence (TL) of these glasses have been studied. From the measured intensities of various absorption bands of these glasses, the Judd-Ofelt parameters Ω₂, Ω₄ and Ω₆ have been evaluated and compared with those of other reported glass systems. The Judd-Ofelt theory could successfully be applied to characterize the absorption and luminescence spectra of these glasses. From this theory various radiative properties like transition probability A, branching ratio β_r, the radiative lifetime τ_r and the emission cross-section σ^E for various emission levels of these glasses have been determined and reported. An attempt has also been made to throw some light on the relationship between the structural modifications and luminescence efficiencies of all the three glasses. The analysis of TL data indicate high non-radiative losses in In₂O₃ mixed glasses.     

Upconverted VUV luminescence of Nd and Er doped into LiYF4 crystals under XeF-laser excitation

The upconverted VUV (185 nm) and UV (230 and 260 nm) luminescence due to 5d-4f radiative transitions in Nd³⁺ ions doped into a LiYF₄ crystal has been obtained under excitation by 351/353 nm radiation from a XeF excimer laser. The maximum upconversion efficiency, defined as the ratio of intensity for 5d-4f luminescence to overall intensity for 5d-4f and 4f-4f luminescence from the ⁴D_3/2 Nd³⁺ level, has been estimated to be about 70% under optimal focusing conditions for XeF laser radiation. A redistribution of intensity between three main components of 5d-4f Nd³⁺ luminescence is observed under changing the excitation power density, which favors the most long-wavelength band (260 nm) at higher excitation density level. The effect is interpreted as being due to excited state absorption of radiation emitted. The upconverted VUV and UV luminescence from the high-lying ²F(2)_7/2 4f level of Er³⁺ doped into a LiYF₄ crystal has also been obtained under XeF-laser excitation the most intense line being at 280 nm from the spin-allowed transition to the ²H(2)_11/2 4f level of Er³⁺, but the efficiency of upconversion for Er³⁺ emission is low, less than 5%.     

Spectroscopic properties of the rubidium and cesium aluminum double molybdate crystals

Infrared, Raman, electron absorption, excitation and emission spectra were measured for RbCr_xAl_1−x(MoO₄)₂ and CsCr_xAl_1−x(MoO₄)₂ crystals (x=0-2%) at the temperatures ranging from 7 to 300 K. A very rich vibronic structure of the emission band was explained and assigned to the respective vibrational modes. One Cr³⁺ center characterized by 2.35 ms lifetimes for rubidium derivative and 1.3 ms for cesium one at 7 K for the ²E→⁴A₂ transition was identified for both crystals. The local structure of the Cr³⁺ surrounding is discussed in terms of the spectroscopic results and the crystal field parameters are derived for both materials.     

Photoluminescence properties of Tb in porous silicon

Terbium (Tb³⁺)/porous silicon (PS) nanocomposites have been formed by impregnation of PS layer in chloride solution of terbium. Complete and uniform penetration of Tb³⁺ into PS layer is confirmed by Rutherford backscattering spectrometry (RBS) study. Photoluminescence (PL) spectrum shows that Tb³⁺ ions emit highly in the green region, while the PL band of PS is quenched. The emission of Tb³⁺ ions depends strongly on the excitation energy and shows a high efficiency at 488 nm corresponding to the maximum absorption band in terbium. A systematic study of the PL versus annealing temperature was performed. It shows an important improvement of the PL intensity for 700°C temperature annealing.