Side-hole to anti-hole conversion in time-resolved spectral hole burning of ruby: Long-lived spectral holes due to ground state level population storage

We report time-resolved transient spectral hole burning of Verneuil-grown 20 ppm and ca. 0.6 ppm ruby (Al₂O₃:Cr³⁺) in zero field and low magnetic fields B∥c at 4 K. The hole-burning spectroscopy of the 20 ppm sample implies relatively rapid cross relaxation in the ⁴A₂ ground state on the ∼1 ms timescale both in zero field and in low magnetic fields, B∥c, up to 0.2 T. In the 0.6 ppm sample, side-hole to anti-hole conversion is observed both in zero field and in low magnetic fields. This conversion is caused by population storage in ⁴A₂ ground state levels. Spin-lattice relaxation, on the 200 ms timescale, is directly observed from the time dependence of the resonant hole and anti holes in B∥c, consistent with a very low cross-relaxation rate. However, in zero field cross relaxation in the ⁴A₂ ground state is still a significant relaxation mechanism for the 0.6 ppm sample resulting in hole decay in ∼50 ms.     

Optical decoherence times and spectral diffusion in an Er-doped optical fiber measured by two-pulse echoes, stimulated photon echoes, and spectral hole burning

Two-pulse and stimulated photon echoes and spectral hole burning were measured on the transition from the lowest component of the ⁴I_15/2 manifold to the lowest component of ⁴I_13/2 of Er³⁺ in a silicate optical fiber at 1.6 K. The two-pulse echo decays gave decoherence times as long as 230 ns for magnetic fields above 2 T. A large field dependent contribution to the homogeneous line width of >2 MHz was found and interpreted in terms of coupling to magnetic tunneling modes (TLS) in the glass. The stimulated echoes measured at 2 T showed spectral diffusion of 0.8 MHz/decade of time between 0.4 and 500 μs. Spectral diffusion in this high field region is attributed to coupling to elastic TLS modes which have a distribution of flip rates in glasses. Time-resolved spectral hole burning at very low field showed stronger spectral diffusion of 5.7 MHz/decade of time, attributed to coupling to magnetic spin-elastic TLS modes.     

Optical decoherence and persistent spectral hole burning in Er:LiNbO3

Developing new resonant optical materials for spatial-spectral holography and quantum information applications requires detailed knowledge of the decoherence and population relaxation dynamics for the quantum states involved in the optical transitions, motivating the need for fundamental material studies. We report recent progress in studying these properties in erbium-doped lithium niobate at liquid helium temperatures. The influence of temperature, applied magnetic fields, measurement timescale, and dopant concentration were probed using photon echo spectroscopy and time-resolved spectral hole burning on the 1532 nm transition of Er³⁺:LiNbO₃. Effects of spectral diffusion due to interactions between Er³⁺ ions and between the Er³⁺ ion and ⁷Li and ⁹³Nb nuclear spins in the host lattice were observed. In addition, long-lived persistent spectral storage of seconds to minutes was observed due to non-equilibrium population redistribution among superhyperfine states.     

Investigation of the magnetic field angle dependence of resistance, irreversibility field, upper critical field and critical current density in DC sputtered Bi-2223 thin film

We measured resistivity and transport critical current density, J_c, as a function of DC magnetic field and the angle (?) between the surface of the film and the magnetic field on ex-situ annealed, c-axis oriented Bi-2223 thin films fabricated by DC sputtering method. Irreversibility field (μ₀H_irr) and upper critical field (μ₀H_c2) were determined from the resistivity versus the applied magnetic field graph. It is observed that critical temperature (T_c), μ₀H_irr,μ₀H_c2 and J_c of the films strongly depend on the direction and strength of the field. While T_c of the film without magnetic field is observed to be about 102 K, it is found to decrease to 90 K (85 K) for the applied field perpendicular (parallel) to c-axis of the film. Not only were μ₀H_irr(0) and μ₀H_c2(0) values determined from the μ₀H_irr and μ₀H_c2 versus temperature graphs, respectively, but also penetration depths and coherence lengths were interpreted. Anisotropy of the film was also discussed by means of the change of irreversibility as a function of angle. Moreover at 4.2 K, J_c was observed to be 3000 A/cm² at zero field; however, it was found to abruptly decrease to 1982 (1 1 2 0) A/cm² under low magnetic field at ?=0° (?=90°), which indicates that anisotropic J_c behavior of the film is intrinsic. Furthermore, we provided a theoretical analysis of the obtained results in the framework of intrinsic pinning theory of superconductors. Microstructural properties of the produced films were also reinvestigated by X-ray diffractometer (XRD) and scanning electron microscopy (SEM) measurements. XRD patterns indicate that the films are c-axis oriented based on the prominent (0 0 l) peaks. SEM images show needle-like grain structures dominate the surface morphology of the films.     

Spectra and intensity parameters of Tm ion in YAlO3 crystal

High quality Tm-doped YAlO₃ (Tm:YAlO₃) single crystals were obtained along crystallographic b-axis by the Czochralski technique. Optical absorption and fluorescence spectra for Tm³⁺ in YAlO₃ crystals were investigated at room temperature. Based on Judd-Ofelt approach, the intensity parameters Ω_t (t = 2, 4, 6) of Tm:YAlO₃ were calculated to be Ω₂ = 0.93 × 10⁻²⁰  cm², Ω₄ = 2.23 × 10⁻²⁰ cm², and Ω₆ = 1.12 × 10⁻²⁰ cm². The spectral parameters such as experimental and theoretical oscillator strengths, radiative transition probabilities, radiative lifetime and the fluorescence branching ratio were also obtained. All results indicate that Tm:YAlO₃ is a potential candidate for compact, efficient mid-infrared lasers with laser diode pumping.     

A single wavelength 1339 nm Nd:YAP pulsed laser

The laser oscillating at a weak line of Nd:YAP around 1.3-μm realized though selecting polarization is described. The energy level transitions of Nd:YAP crystal and their polarization properties were analyzed. A thin-film polarizer was adopted to restrain the oscillating of the c-axis strong polarized spectral lines and a reasonable transmittance was designed to suppress the a-axis polarized 1064 nm strong line lasing, and then a-axis polarized 1339 nm pulse laser of 336 mJ for free running mode and 64 mJ for electro-optic Q-switched mode were successfully achieved, corresponding to pulse widths of 180 μs and 35 ns, respectively. This method of selecting polarization to realize weak line oscillating is significant for anisotropic laser crystals doped with Nd³⁺ ions to select the particular transitions.     

Fast epitaxial growth of a-axis- and c-axis-oriented YBa2Cu3O7−δ films on (1 0 0) LaAlO3 substrate by laser chemical vapor deposition

a-axis- and c-axis-oriented YBa₂Cu₃O_7−δ (YBCO) films were epitaxially grown on (1 0 0) LaAlO₃ substrates by laser chemical vapor deposition. The preferred orientation in the YBCO film changed from the a-axis to the c-axis with increasing laser powers from 77 to 158 W (the deposition temperatures from 951 to 1087 K). The a-axis-oriented YBCO film showed in-plane epitaxial growth of YBCO [0 0 1]//LAO [0 0 1], and the c-axis-oriented YBCO film showed that of YBCO [0 1 0]//LAO [0 0 1]. A c-axis-oriented YBCO film with a high critical temperature of 90 K was prepared at a deposition rate of 90 μm h⁻¹, about 2-1000 times higher than that of metalorganic chemical vapor deposition.     

Hole burning spectroscopy of InAs self-assembled quantum dots for memory application

We report on the two spectral holes in the photocurrent of InAs self-assembled quantum dots (SAQDs) embedded in a pin diode irradiated by two different lasers. The estimated homogeneous broadening (Γ_h) of 25 μeV for InAs SAQDs implies the possibility of high-density multiple wavelength-domain optical memory with the ratio of inhomogeneous broadening to Γ_h larger than 3300. The dependence of writing power, electric field, and temperature on the Γ_h was also investigated using hole burning spectroscopy. The Γ_h broadened not only as the writing power increased over a few W/cm² but also as the applied field increased. The Γ_h showed linear dependence on temperature, and the spectral hole was observed up to 80 K.     

Effects of growth temperature on Li-N dual-doped p-type ZnO thin films prepared by pulsed laser deposition

Li-N dual-doped p-type ZnO (ZnO:(Li,N)) thin films have been prepared by pulsed laser deposition. The introduction of Li and N was confirmed by secondary ion mass spectrometry measurements. The structural, electrical, and optical properties as a function of growth temperature were investigated in detail. The lowest room-temperature resistivity of 3.99 Ω cm was achieved at the optimal temperature of 450 °C, with a Hall mobility of 0.17 cm²/V s and hole concentration of 9.12 × 10¹⁸ cm⁻³. The ZnO:(Li,N) films exhibited good crystal quality with a complete c-axis orientation, a high transmittance (about 90%) in the visible region, and a predominant UV emission at room temperature. The two-layer-structure p-ZnO:(Li,N)/n-ZnO homojunctions were fabricated on a sapphire substrate. The current-voltage characteristics exhibited the rectifying behavior of a typical p-n junction.     

Photocarrier transport in iron-doped potassium lithium tantalate niobate studied by time-of-flight measurement

The photocarrier mobility of Fe 0.03 wt%-doped potassium lithium tantalate niobate (K_0.95Li_0.05Ta_0.61Nb_0.39O₃) was investigated by time-of-flight (TOF) measurement. The longitudinal photocarrier response due to pulsed excitation leads to values of the drift mobility of μ_h = 1.45 × 10⁻² cm²/V s for holes, μ_e = 0.325 × 10⁻² cm²/V s for electrons, and a value for the range of holes (μτ)_h = 4.38 × 10⁻⁵ cm²/V at room temperature and at low field 3 KV/cm. The response time of holes and electrons (or the relaxation time) is determined to be 3.02 × 10⁻³ s and 3.74 × 10⁻³ s, respectively. The mobility of holes strongly depends on the field strength, and is observed to decrease with increasing bias field.     

Population inversion between the H4 and the F4 excited states of Tm investigated by means of numerical solutions of the rate equations system in Tm-doped and Tm, Ho-codoped fluoride glasses

Population inversion between the ³H₄ and the ³F₄ excited states of Tm³⁺ ions responsible for the 1.5 μm emission in Tm³⁺ singly doped (0.5%) and Tm³⁺, Ho³⁺-codoped fluoride (ZBLAN) glasses and its dependence on the Ho³⁺ concentration (x=0.2-1%) was investigated by means of numerical solution of the rate equations system for continuous pumping at 797 nm. Mean lifetimes of donor and acceptor states were evaluated by using the integration method applied to the best fitting of fluorescence curves previously reported. Lifetime values were used to obtain the rate constants of all non-radiative energy-transfer processes involved and a complete set of rate equations better describing the observations was given. The rate equations were solved by numerical method and the population inversion between the ³H₄ and the ³F₄ excited states of Tm³⁺ was calculated to examine the beneficial effects on the gain associated with Ho³⁺ codoping. The results have shown that Tm³⁺ population inversion is reached only for high Ho³⁺-codoping (?0.3 mol%). Highest population inversion (∼1.6×10¹⁸ Tm³⁺ ions cm⁻³) was obtained in Tm(0.5%), Ho(1%)-codoped (ZBLAN) pumped by 2.8 kW cm⁻². This population inversion density is ∼6.4 times higher than that one observed in Tm:Tb:GLKZ, Tm:Tb:Ge-Ga-As-S-CsBr and Tm:Ho:Ge-Ga-As-S-CsBr for a similar pumping condition (∼2.5×10¹⁷ cm⁻³). In addition, Tm(0.5%):Ho(1%):ZBLAN presents the highest population inversion that linearly increases with the pumping intensity; this behavior does not show saturation effect at least for the maximum intensity of 12 kW cm⁻² employed. The use of 1 mol% of Ho³⁺-codoping maximizes the potential gain of Tm³⁺-doped (0.5%) ZBLAN to produce stimulated emission near 1.5 μm, making this material suitable for using it as fiber optical amplifier and/or fiber laser operating in 1.4-1.5 μm region of the spectrum.     

VUV spectroscopy of pure and Tm-doped LicaAlF6 crystals

Nominally pure and Tm³⁺-doped LiCaAlF₆ crystals were grown by the Czochralski technique in a reducing atmosphere. The optical properties of transparent single crystals were studied using absorption and time-resolved luminescence spectroscopy in the VUV spectral range (330-100 nm). The strongest VUV emission peaking at 60 800 cm⁻¹ with a decay time of 5.6 μs (7 μs) at 300 K (7.4 K) was assigned to the spin-forbidden 4f¹¹5d-4f¹² transition of Tm³⁺. The fine structure observed in the VUV emission and corresponding excitation spectra indicate intermediate strength of electron-phonon coupling in this system. The efficient excitation of f-f emissions above 72 000 cm⁻¹, higher than the onset of f-d absorption at 63 000 cm⁻¹, is mainly caused by the F⁻ to Tm³⁺ charge transfer absorption. The nature of various host-related excitation processes in the energy transfer to the Tm³⁺ ions is discussed.     

Controlled Stark shifts in Er-doped crystalline and amorphous waveguides for quantum state storage

We present measurements of the linear Stark effect on the ⁴I_15/2 → ⁴I_13/2 transition in an Er³⁺-doped proton-exchanged LiNbO₃ crystalline waveguide and an Er³⁺-doped silicate fiber. The measurements were made using spectral hole burning techniques at temperatures below 4 K. We measured an effective Stark coefficient (Δμ_eχ)/(h) = 25 ± 1 kHz/V cm⁻¹ in the crystalline waveguide and  kHz/V cm⁻¹ in the silicate fiber. These results confirm the potential of erbium-doped waveguides for quantum state storage based on controlled reversible inhomogeneous broadening.     

Magnetic properties of Nd–Fe–B film magnets prepared by RF sputtering

Highly oriented films of ∼6 μm in thickness consisting of the Nd₂Fe₁₄B compound phase were obtained by a three-dimensional sputtering method at room temperature and the subsequent crystallization by annealing. The c-axis orientation and coercivity of film samples were sensitive to the sputtering parameters and annealing conditions. The optimum temperature and time for annealing were 650 °C and 30 min to show the highest coercivity without any deterioration for the orientation of Nd₂Fe₁₄B grains, and furthermore the degree of c-axis orientation was increased by decreasing the Ar gas pressure or input power for sputtering. The resultant film magnets with good magnetic properties of B_r=∼1.06 T, H_C=∼371 kA/m, and (BH)_max=∼160 kJ/m³ were obtained under the optimized parameters for sputtering.     

Magnetization anisotropy of the Tm- and Fe-subsystems in Tm2Fe17

Magnetic and neutron diffraction measurements were carried out in order to study the spontaneous and induced spin-reorientation (SR) transition of the “easy axis–easy plane” type in the poly and single-crystalline samples of the hexagonal Tm₂Fe₁₇. We have determined the temperature dependence of the lattice parameters and the angle between the c-axis and the magnetic moment of the Tm-subsystem. We also find that the SR transition is accompanied by a large (about 20%) magnetization change of the Tm subsystem. In order to induce such a SR transition with the external magnetic field, μ₀H_cr=5 T is necessary to be applied along the hard-magnetization direction (the a-axis) at 4.2 K. The H_cr value decreases with an increasing temperature. The magnetization measurements demonstrate that at 10 K the saturation magnetization along the easy-magnetization direction (the c-axis) is smaller than that along the hard-magnetization direction. Based on this observation, we believe that Fe-subsystem of Tm₂Fe₁₇ is likely to have magnetization anisotropy.     

Designing of endlessly single mode polarization maintaining highly birefringent nonlinear micro-structure fiber at telecommunication window by FV-FEM

An endlessly single mode highly polarization maintaining nonlinear microstructure fiber at telecommunication window is reported via full-vector finite element method. By taking three ring hexagonal PCF with suitable fiber parameter such as air hole diameter in cladding region d = 0.8 μm, pitch 2.3 μm and introducing four symmetrical large air holes near core region d′ = 2 μm, single mode (V_eff ≤ π), small effective mode area 2.7 μm², nonlinear co-efficient 44.39 W⁻¹ km⁻¹, high phase birefringence of the order of 10⁻³ and group birefringence of the order of 10⁻⁴ with beat length 0.3 μm at wavelength 1.55 μm are achieved.     

Near-infrared emissions and quantum efficiencies in Tm-doped heavy metal gallate glasses for S- and U-band amplifiers and 1.8 μm infrared laser

Intense 1.8 μm and efficient 1.48 μm infrared emissions have been recorded in Tm³⁺-doped alkali-barium-bismuth-gallate (LKBBG) glasses with low phonon energies under the excitation of 792 nm diode laser. The maximum emission cross-sections for 1.8 and 1.48 μm emission bands are derived to be 6.26×10⁻²¹ and 3.34×10⁻²¹ cm², respectively, and the peak values are much higher than those in Tm³⁺-doped ZBLAN glass. In low-concentration doping, the full-widths at half-maximum (FWHMs) of the two emission bands are 223 and 122 nm, and the quantum efficiencies of the ³F₄ and ³H₄ levels are proved to be ∼100% and 86%, respectively. When the doping concentration increases to 1 wt%, the quantum efficiency of the ³H₄ level is reduced to 60% due to the cross-relaxation processes in high-concentration doping. Efficient 1.8 μm infrared emission in Er³⁺/Tm³⁺-codoped LKBBG glass has also been achieved under the excitation of 970 nm diode laser, and the probability and the efficiency of non-radiative energy transfer from Er³⁺ to Tm³⁺ are as high as 354 s⁻¹ and 58.4%, respectively. Efficient and broad 1.8 and 1.48 μm infrared emission bands indicate that Tm³⁺-doped LKBBG glasses are suitable materials in developing S- and U-band amplifiers and 1.8 μm infrared laser.     

Gigantic uniaxial pressure effect in single crystals of iron-based superconductors

In order to elucidate the anisotropic pressure effect on superconductivity in an iron-based superconductor, magnetization measurements have been performed in Ba(Fe_0.92Co_0.08)₂As₂ single crystals under uniaxial pressures applied along the c-axis. Gigantic T_c suppression, dT_c/dP_//c = −15 K/GPa, was observed when the anisotropic deformation with the a-expansion and c-compression was induced by the c-pressure, which should be compared with dT_c/dP < +1 K/GPa in the isotropic pressure case. This suggests that the a-axis (c-axis) compression has a positive (negative) contribution to T_c.     

Defects related room temperature ferromagnetism in p-type (Mn, Li) co-doped ZnO films deposited by reactive magnetron sputtering

We report on the defects related room temperature ferromagnetic characteristics of Zn_0.95-xMn_xLi_0.05O (x = 0.01, 0.03, 0.05 and 0.08) thin films grown on glass substrates using reactive magnetron sputtering. By increasing the Mn content, the films exhibited increases in the c-axis lattice constant, fundamental band gap energy, coercive field and remanent magnetization. Comparison of the structural and magnetic properties of the as-deposited and annealed films indicates that the hole carriers, together with defects concentrations, play an important role in the ferromagnetic origin of Mn and Li co-doped ZnO thin films. The ferromagnetism in films can be described by bound magnetic polaron models with respect to defect-bound carriers.     

Understanding the magnetic ground state of rare-earth intermetallic compound Ce4Sb3: Magnetization and neutron diffraction studies

Magnetization and neutron diffraction studies have been performed on Ce₄Sb₃ compound (cubic Th₃P₄-type, space group I4¯3d, no. 220). Magnetization of Ce₄Sb₃ reveals a ferromagnetic transition at ∼5 K, the temperature below which the zero-field-cooled and field-cooled magnetization bifurcate in low applied fields. However, a saturation magnetization (M_S) value of only ∼0.93μ_B/Ce³⁺ is observed at 1.8 K, suggesting possible presence of crystal field effects and a paramagnetic/antiferromagnetic Ce³⁺ moment. Magnetocaloric effect in this compound has been computed using the magnetization vs. field data obtained in the vicinity of the magnetic transition, and a maximum magnetic entropy change, −ΔS_M, of ∼8.9 J/kg/K is obtained at 5 K for a field change of 5 T. Inverse magnetocaloric effect occurs at ∼2 K in 5 T indicating the presence of antiferromagnetic component. This has been further confirmed by the neutron diffraction study that evidences commensurate antiferromagnetic ordering at 2 K in zero magnetic field. A magnetic moment of ∼1.24μ_B/Ce³⁺ is obtained at 2 K and the magnetic moments are directed along Z-axis.