Synthesis of BaF2:Ce nanophosphor and epoxy encapsulated transparent nanocomposite

BaF₂:Ce nanophosphors with a peak emission at 355 nm were synthesized using a chemical precipitation method with oleic acid as the capping ligands. The cerium doping concentration was optimized and it was found that the photoluminescence intensity reached a maximum at about 15 mol% of Ce doping. Two distinct photoluminescence excitation peaks were observed from all samples at about 255 and 290 nm. The nanophosphors were incorporated into an epoxy matrix to form bulk nanocomposite samples for potential scintillation applications. Index matching between the nanophosphor and the epoxy matrix is critical to obtain high transparency.     

Intrinsic ultraviolet luminescence from Lu2O3, Lu2SiO5 and Lu2SiO5:Ce

Radioluminescence and thermally stimulated luminescence measurements on Lu₂O₃, Lu₂SiO₅ (LSO) and Lu₂SiO₅:Ce³⁺ (LSO:Ce) reveal the presence of intrinsic ultraviolet luminescence bands. Characteristic emission with maximum at 256 nm occurs in each specimen and is attributed to radiative recombination of self-trapped excitons. Thermal quenching of this band obeys the Mott-Seitz relation yielding quenching energies 24, 38 and 13 meV for Lu₂O₃, LSO and LSO:Ce, respectively. A second intrinsic band appears at 315 nm in LSO and LSO:Ce, and at 368 nm in Lu₂O₃. Quenching curves for these bands show an initial increase in peak intensity followed by a decrease. Similarity in spectral peak position and quenching behavior indicate that this band has a common origin in each of the samples and is attributed to radiative recombination of self-trapped holes, in agreement with previous work on similar specimens. Comparison of glow curves and emission spectra show that the lowest temperature glow peaks in each specimen are associated with thermal decay of self-trapped excitons and self-trapped holes. Interplay between the intrinsic defects and extrinsic Ce³⁺ emission in LSO:Ce is strongly indicated.     

Preparation and properties of nanocrystalline powders in (Y1−xCex)3Al5O12 system

Nano-sized cerium-doped yttrium aluminum garnet (YAG:Ce) phosphors were synthesized via a simple sol-gel process using metal nitrate precursors. The prepared phosphors were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy, respectively. Pure cubic garnet phase was formed at temperatures ∼900 ^οC. The particle sizes of as-prepared powders were mostly in the range of 17-27 nm. The crystalline YAG:Ce showed broad emission peaks in the range of 400-700 nm and maximum intensities at 500 and 520 nm. It is found also that the emission intensity decreased with increasing Ce doping concentration from 0.1 to 1.5 at%. With increasing Ce doping concentration, the PL intensity was shifted towards shorter wavelengths.     

Influence of annealing temperature on the photoluminescence property of ZnO thin film covered by TiO2 nanoparticles

In this work, ZnO thin films covered by TiO₂ nanoparticles (labeled as TiO₂-ZnO thin films) were prepared by electron beam evaporation. The influence of annealing temperature on the photoluminescence property of the samples was studied. The structures and surface morphologies of the samples were analyzed by X-ray diffraction (XRD) and atomic force microscope, respectively. The photoluminescence was used to investigate the fluorescent properties of the samples. The measurement results show that the ultraviolet emission of ZnO thin films is largely enhanced after they are covered by TiO₂ nanoparticles, while the green emission is suppressed. However, when the annealing temperature is relatively high (≥500 °C), the intensity of ultraviolet emission drops off and a violet emission peak along with a blue emission peak appears. This is probably connected with the atomic interdiffusion between TiO₂ nanoparticles and ZnO thin film. Therefore, selecting a suitable annealing temperature is a key factor for obtaining the most efficient ultraviolet emission from TiO₂-ZnO thin films.     

Structural, optical and electrical properties of ZnO/Zn2GeO4 porous-like thin film and wires

Zinc oxide/zinc germanium oxide (ZnO/Zn₂GeO₄) porous-like thin film and wires has been fabricated by simple thermal evaporation method at temperature about 1120 °C for 2.5 h. The structural and optical properties of the porous-like-thin film and wires have been investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. Metal semiconductor metal (MSM) photodetector structure was used to evaluate the electrical characteristics by using current-voltage (I-V) measurements. Room temperature photoluminescence spectrum of the sample shows one prominent ultraviolet peak at 378 nm and a shoulder at 370 nm. In addition, broad visible blue emission peak at wavelength 480 nm and green emission peak at 500 nm are also observed. Strong photoelectric properties of the MSM in the UV demonstrated that the porous-like-thin film and wires contribute to its photosensitivity and therefore making ZnO/Zn₂GeO₄ wires potential photodetector in the shorter wavelength applications.     

Surface characterization and luminescent properties of SrAl2O4:Eu,Dy nano thin films

SrAl₂O₄:Eu²⁺, Dy³⁺ thin films were grown on Si (1 0 0) substrates in different atmospheres using the pulsed laser deposition (PLD) technique. The effects of vacuum, oxygen (O₂) and argon (Ar) deposition atmospheres on the structural, morphological and photoluminescence (PL) properties of the films were investigated. The films were ablated using a 248 nm KrF excimer laser. Improved PL intensities were obtained from the unannealed films prepared in Ar and O₂ atmospheres compared to those prepared in vacuum. A stable green emission peak at 520 nm, attributed to 4f⁶5d¹→4f⁷ Eu²⁺ transitions was obtained. After annealing the films prepared in vacuum at 800 °C for 2 h, the intensity of the green emission (520 nm) of the thin film increased considerably. The amorphous thin film was crystalline after the annealing process. The diffusion of adventitious C into the nanostructured layers deposited in the Ar and O₂ atmospheres was most probably responsible for the quenching of the PL intensity after annealing.     

Laser-excited spectra of Lu2SiO5:Ce scintillator

The emission spectra of Lu₂SiO₅:Ce single crystal under the excitation of 266 nm laser were investigated. The emission spectra of LSO single crystal show no temperature quenching from 20 to 300 K, under the excitation of 266 nm laser with 2 mJ pulse energy. With rising temperature, the Ce1 emission is slightly decreased, while the Ce2 emission is slightly increased. These results show the emissions of Ce1 and Ce2 is not only dependent on the concentration ratio but also influenced by the possible energy transfer processes, including Ce1 to Ce2, intrinsic STHs to Ce2 and the phonon-assisted transfer processes. The spectral thermal broadening and the spectral overlap become evident at high temperature, leading to the enhancement of energy transfer. When the excitation power lowers, the ratio of Ce1 and Ce2 emission increases, and is close to the Xe lamp ultraviolet (UV) excitation, suggesting that the energy transfer from Ce1 center to Ce2 center may be also dependent on the excitation power.     

Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method

E₂SiO₅ thin films were fabricated on Si substrate by reactive magnetron sputtering method with subsequent annealing treatment. The morphology properties of as-deposited films have been studied by scanning electron microscope. The fraction of erbium is estimated to be 23.5 at% based on Rutherford backscattering measurement in as-deposited Er-Si-O film. X-ray diffraction measurement revealed that Er₂SiO₅ crystalline structure was formed as sample treated at 1100 °C for 1 h in O₂ atmosphere. Through proper thermal treatment, the 1.53 μm Er³⁺-related emission intensity can be enhanced by a factor of 50 with respect to the sample annealed at 800 °C. Analysis of pump-power dependence of Er³⁺ PL intensity indicated that the upconversion phenomenon could be neglected even under a high photon flux of 10²¹(photons/cm²/sec). Temperature-dependent photoluminescence (PL) of Er₂SiO₅ was studied and showed a weak thermal quenching factor of 2. Highly efficienct photoluminescence of Er₂SiO₅ films has been demonstrated with Er³⁺ concentration of 10²²/cm³, and it opens a promising way towards future Si-based light source for Si photonics.     

The central role of oxygen on H-irradiated Lu2SiO5 luminescence

The behavior of self-trapped defects (STDs) in ion-beam irradiated Lu₂SiO₅ (LSO) crystal has been investigated via temperature-dependent radioluminescence (RL) measurements. Production of oxygen vacancies is the major effect of H⁺ irradiation on luminescencent properties of this phosphor. Luminescence centers for self-trapped exciton (STE) and self-trapped hole emission are assigned to oxygen vacancies and oxygen ions, respectively. Ion-induced structural damage modifies the thermal stability of the STDs and creates perturbed STEs. A striking effect of ion irradiation is the approximate factor-of-two enhancement of STE RL intensity that results from implantation of only a thin (∼250 nm) surface layer of LSO. This enhancement is attributed to ion-beam modification of a surface dead layer.     

Optical and electrical properties of p-type ZnO fabricated by NH3 plasma post-treated ZnO thin films

In this paper, a simple method is reported to obtain nitrogen-doped p-ZnO film. In this method NH₃ plasma, generated in a plasma-enhanced chemical vapor deposition system, was employed to treat ZnO thin film. By Hall-effect measurement, a p-type conductivity was observed for the treated film with the hole density of 2.2 × 10¹⁶ cm⁻³. X-ray photoelectron spectroscopy (XPS) results confirmed that nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions. In low temperature photoluminescence spectra, an emission peak corresponding to acceptor-donor pair was observed. From this emission peak we calculated the N-related acceptor binding energy to be 130 meV.     

Investigation on upconversion photoluminescence of Bi3TiNbO9:Er:Yb thin films

Bi₃TiNbO₉:Er³⁺:Yb³⁺ (BTNEY) thin films were fabricated on fused silica by pulsed laser deposition. It was demonstrated that different laser fluence and substrate temperature during growth of BTNEY upconversion photoluminescence (UC-PL) samples control the film’s grain size and hence influences the UC-PL properties. The average grain size of BTNEY thin films deposited on fused silica substrates with laser fluence 4, 5, 6, and 7 J/cm² are 30.8, 35.9, 40.6, and 43.4 nm, respectively. The 525 nm emission intensities increase with the deposition laser fluence and the emission intensities of BTNEY thin film deposited under 700 and 600 °C are almost 24 and 4 times, respectively, as strong as those of samples under 500 °C. The grain size of BTNEY thin film increases with the increasing temperature. UC-PL of BTNEY films is enhanced by increasing grain size of the films.     

Evidence of the primary-color photoluminescence in ion (H,H,C) irradiated and thermal annealed SrTiO3

We have measured photoluminescence (PL) spectrum of (1) thermal-annealed SrTiO₃/Si thin film and undoped SrTiO₃ single crystal; (2) SrTiO₃ single crystal irradiated by high energy (3 MeV) proton, deuterium, and He ion beams and (3) SrTiO₃ single crystal irradiated by low energy (60 keV) H⁺ and C⁻ ions. Two PL emissions are induced in (1) and (2) at visible frequencies 3 and 2.45 eV, while another PL peak is induced at 2 eV in (3). When compared with our previous PL experiments on high-temperature annealed SrTiO₃/SiO₂/Si thin film and 3 MeV proton (H⁺) irradiated STO single crystal, these results confirm that the three PL emissions with blue (3 eV), green (2.45 eV), and red-orange (2 eV) frequencies originate indeed from SrTiO₃. These primary-color PL effect induced at room-temperature makes STO a strong candidate material for future oxide-based optoelectronic application.     

Photoluminescence and Raman spectra of the ordered vacancy compound CuGa5Se8

We studied the photoluminescence (PL) and Raman properties of the ordered defect compound CuGa₅Se₈. Twelve peaks were detected from the room-temperature Raman spectra with the A₁ mode around 160 cm⁻¹. Due to the stress in the polycrystalline thin film the corresponding frequencies of the Raman modes of a CuGa₅Se₈ single crystal were slightly shifted. One broad asymmetric PL band at 1.788 and 1.765 eV was observed at 10 K in the PL spectra of CuGa₅Se₈ single crystal and polycrystalline layer, respectively. The temperature and laser power dependencies of the PL spectra were also studied. The shape and properties of the PL band assure the presence of potential fluctuations and the analyses of the PL data suggest that the emission is due to band-to-tail (BT) or band-to-impurity (BI) recombination.     

Preparation of nanocone ZnO thin film and its aging effect of photoluminescence

In this work, a nanocone ZnO thin film was prepared by electron beam evaporation on a Si (1 0 0) substrate. The structural properties of the film were investigated by X-ray diffraction (XRD), atomic force microscopy and laser Raman scattering, respectively. The aging effect of the nanocone ZnO thin film was studied by photoluminescence spectra. The structural analyses show that the prepared ZnO thin film has a hexagonal wurtzite structure and is preferentially oriented along the c-axis perpendicular to the substrate surface. The photoluminescence spectra show that with the increase of aging time, the green emission of the nanocone ZnO thin film gradually decreases while the ultraviolet emission somewhat increases. The reason for this phenomenon is likely that the green-emission-related oxygen vacancies in the film are gradually filled up. The Raman scattering analyses also suggest that the intensity of the Raman peak related to oxygen vacancies in the nanocone ZnO thin film declines after the film is aged in air for a year. Therefore, the authors think the green emission is mainly connected with oxygen vacancy defects.     

Microstructure and dielectric properties of La2O3 doped amorphous SiO2 films as gate dielectric material

As a potential gate dielectric material, the La₂O₃ doped SiO₂ (LSO, the mole ratio is about 1:5) films were fabricated on n-Si (0 0 1) substrates by using pulsed laser deposition technique. By virtue of several measurements, the microstructure and electrical properties of the LSO films were characterized. The LSO films keep the amorphous state up to a high annealing temperature of 800 °C. From HRTEM and XPS results, these La atoms of the LSO films do not react with silicon substrate to form any La-compound at interfacial layer. However, these O atoms of the LSO films diffuse from the film toward the silicon substrate so as to form a SiO₂ interfacial layer. The thickness of SiO₂ layer is only about two atomic layers. A possible explanation for interfacial reaction has been proposed. The scanning electron microscope image shows the surface of the amorphous LSO film very flat. The LSO film shows a dielectric constant of 12.8 at 1 MHz. For the LSO film with thickness of 3 nm, a small equivalent oxide thickness of 1.2 nm is obtained. The leakage current density of the LSO film is 1.54 × 10⁻⁴ A/cm² at a gate bias voltage of 1 V.     

XPS analysis for degraded Y2SiO5:Ce phosphor thin films

X-ray photoelectron spectroscopy (XPS) results were obtained for standard Y₂SiO₅:Ce phosphor powders as well as undegraded and 144 h electron degraded Y₂SiO₅:Ce pulsed laser deposited (PLD) thin films. The two Ce 3d peaks positioned at 877.9 ± 0.3 and 882.0 ± 0.2 eV are correlated with the two different sites occupied by Ce in the Y₂SiO₅ matrix. Ce replaced the Y in the two different sites with coordination numbers of 9 and 7. The two Ce 3d XPS peaks obtained during the thin film analysis were also correlated with the luminescent mechanism of the broad band emission spectra of the Y₂SiO₅:Ce X₁ phase. These two different sites are responsible for the two main sets of cathodoluminescent (CL) and photoluminescence (PL) peaks situated at wavelengths of 418 and 496 nm. A 144 h electron degradation study on the Y₂SiO₅:Ce thin film yielded an increase in the CL intensity with a second broad emission peak emerging between 600 and 700 nm. XPS analysis showed the presence of SiO₂ on the surface that formed during prolonged electron bombardment. The electron stimulated surface chemical reaction (ESSCR) model is used to explain the formation of this luminescent SiO₂ layer.     

Effect of Nd concentration on structural and optical properties of Nd:Y2O3 transparent ceramic

Y₂O₃ transparent ceramics with different Nd concentration (0.1-7.0at%) were fabricated using ZrO₂ as additive. All the samples exhibit high transparency over a broad spectral region. The elements (Y, O and Nd) are uniformly distributed in the ceramic body, and the average grain size increases with Nd content. Based on the absorption spectrum, the Judd-Ofelt intensity parameters are calculated (Ω₂=4.364×10⁻²⁰ cm², Ω₄=3.609×10⁻²⁰ cm² and Ω₆=2.919×10⁻²⁰ cm²). The absorption coefficients increase linearly with Nd³⁺ doping concentration. The absorption cross-section at 804 nm and stimulated emission cross-section at 1078 nm are calculated to be 1.54×10⁻²⁰ and 7.24×10⁻²⁰ cm², respectively. All the emission bands exhibit the highest emission intensities with 1.0at% Nd³⁺ ion content, while the lifetime decreases dramatically from 321.5 μs (0.1at% Nd) to 17.9 μs (7.0at% Nd). According to the emission spectra and measured lifetime, the optimum doping concentration of Nd³⁺ ion in Y₂O₃ transparent ceramic might be around 1.0at%.     

Near-infrared emission bands of Er-doped YAP and LSO crystals

The ground state absorption (GSA), photoluminescence (PL) and photoluminescence excitation (PLE) spectra for Er(1.0 at%):YAP and Er(0.5 at%):LSO were measured at room temperature. Based on the GSA spectra, the radiative transition rates and luminescence branch ratios of erbium ions were determined by the Judd-Ofelt (J-O) method. In the range of 1400-1700 nm Er(1.0 at%):YAP has intense absorption at 1509 nm (0.96×10⁻²⁰ cm²), which is almost two times larger than the peak absorption of Er(0.5 at%):LSO. From the PL and PLE spectra, four intense emission bands around 850 nm (⁴S_3/2→⁴I_13/2), 980 nm (⁴I_11/2→⁴I_15/2), 1230 nm (⁴S_3/2→⁴I_11/2) and 1520 nm (⁴I_13/2→⁴I_15/2) were observed. The stimulated emission cross-sections of the four bands were calculated by the Fuchtbauer-Ladenberg (F-L) equation. The results suggest that Er(1.0 at%):YAP has potential to realize laser oscillation at 858 nm because of the relatively large simulated emission cross-section (1.76×10⁻²⁰ cm²). The temperature dependences of the PL spectra for the two crystals were also investigated in the range of 290-12 K. The ∼1520 nm emission presents continuous increase with temperature, while the emissions around 850, 1230 and 980 nm firstly increase with temperature, then reach their own largest values at the transition temperatures (about 100 K), and finally decrease with temperature. These results were well interpreted by the temperature dependence of multi-phonon process.     

Characterization of AgInS2 thin films prepared by vacuum evaporation

We characterized AgInS₂ thin films prepared by vacuum evaporation. In the case of thin films annealed at 400 °C, diffraction peaks were observed only for the chalcopyrite AgInS₂ phase. The chemical composition of the thin films annealed at 400 °C was 26.5 at% Ag, 23.8 at% In, and 49.7 at% S. PL spectra of the AgInS₂ thin films at 10.7 K showed peaks at 1.70, 1.80, and 1.83 eV. The PL peak at1.80 eV was attributed to sulfur deficiency.     

The structural and optical properties of ZnO/Si thin films by RTA treatments

ZnO/Si thin films were prepared by rf magnetron sputtering method and some of the samples were treated by rapid thermal annealing (RTA) process at different temperatures ranging from 400 to 800 °C. The effects of RTA treatment on the structural properties were studied by using X-ray diffraction and atomic force microscopy while optical properties were studied by the photoluminescence measurements. It is observed that the ZnO film annealed at 600 °C reveals the strongest UV emission intensity and narrowest full width at half maximum among the temperature ranges studied. The enhanced UV emission from the film annealed at 600 °C is attributed to the improved crystalline quality of ZnO film due to the effective relaxation of residual compressive stress and achieving maximum grain size.