Enhanced white light emission in Er/Tm/Yb/Li codoped Y2O3 nanocrystals

Er/Tm/Yb codoped Y₂O₃ nanocrystals and Er/Tm/Yb/Li codoped Y₂O₃ nanocrystals have been synthesized by sol-gel method, bright white light emission has been observed at 976 nm excitation. The blue, green, and red emissions, respectively, arise from the transitions ¹G₄ → ³H₆ of Tm³⁺, ²H_11/2/⁴S_3/2 → ⁴I_15/2, and ⁴F_9/2 → ⁴I_15/2 of Er³⁺ ion. Moreover, after doping Li⁺ ions into Er/Tm/Yb codoped Y₂O₃ nanocrystals, the white light emission increase greatly. CIE coordinate of Er/Tm/Yb/Li codoped Y₂O₃ nanocrystals is X = 0.32 and Y = 0.36 at 10 W/cm² excitation, which is very close to the standard equal energy white light illuminate (X = 0.33, Y = 0.33).     

Fourier transform microwave spectroscopy of isotopically substituted diacetylenes: rs-structure, quadrupole coupling, and anisotropic nuclear spin-spin interaction

Monodeuterated diacetylene (HCCCCD) and its ¹³C-substituted species H¹³CCCCD, HC¹³CCCD, HCC¹³CCD, and HCCC¹³CD were investigated by Fourier transform microwave spectroscopy. The D nuclear quadrupole splittings were almost completely resolved. For H¹³CCCCD hyperfine splittings caused by the anisotropic nuclear spin-spin interaction between the H and ¹³C nuclei were also observed. The analysis yielded rotational constants, centrifugal distortion constants, and the constants for the nuclear quadrupole coupling and anisotropic nuclear spin-spin interaction. The substitution structure of HCCCCD was calculated as follows: r_s(C-H) = 1.056054(39) Å, r_s(CC) = 1.208631(4) Å, r_s(C-C) = 1.374117(6) Å, r_s(CC) = 1.208116(4) Å, and r_s(C-D) = 1.056231(17) Å, in the order of the arrangement of the bonds. A rough estimate of the equilibrium structure is also presented. The eQq constant for the deuterium nucleus is 0.2061(4) MHz. The anisotropic ¹³C-H spin-spin interaction constant was experimentally determined for the first time as b = −29.2(15) kHz, which is defined as the coefficient of (3I_2zI_3z − I₂ · I₃), where I₂ and I₃ denote the H and ¹³C nuclear spins, respectively, and I_2z and I_3z their components along the molecular axis. The observed b constant is not accounted for by the direct magnetic dipole-dipole interaction only, suggesting a significant contribution from indirect anisotropic interaction.     

Optical properties of Er/Yb-codoped transparent PLZT ceramic

Optical absorption and emission spectra of Er³⁺/Yb³⁺ ions in PLZT (Pb_1−xLa_xZr_yTi_1−yO₃) ceramic have been studied. Based on the Judd—Ofelt (J-O) theory, the J-O intensity parameters were calculated to be Ω₂=2.021×10⁻²⁰ cm², Ω₄=0.423×10⁻²⁰ cm², Ω₆=0.051×10⁻²⁰ cm² from the absorption spectrum of Er³⁺/Yb³⁺-codoped PLZT. The J-O intensity parameters have been used to calculate the radiative lifetimes and the branching ratios for some excited ⁴I_13/2, ⁴I_11/2, ⁴I_9/2⁴F_9/2, and ⁴S_3/2 levels of Er³⁺ ion. The stimulated emission cross-section (8.24×10⁻²¹ cm²) was evaluated for the ⁴I_13/2→⁴I_15/2 transition of Er³⁺. The upconversion emissions at 538, 564, and 666 nm have been observed in Er³⁺/Yb³⁺-codoped PLZT by exciting at 980 nm, and their origins were identified and analyzed.     

Optical properties of Er in MoO3-Bi2O3-TeO2 glasses

Erbium-doped MoO₃−Bi₂O₃−TeO₂ (MBT) glasses suitable for broadband optical amplifier applications have been fabricated and characterized optically. The maximum phonon band of undoped glasses is at 915 cm⁻¹, and the emission from the Er³⁺: ⁴I_13/2 → ⁴I_15/2 transition locates around 1.53 μm with a full width at half maximum (FWHM) of ∼80 nm. The lifetime and quantum efficiency of the ⁴I_13/2 level are 2.13 ms and ∼90%, respectively. Under the same measurement condition, the upconversion emission intensities at 550 nm in Er³⁺-doped MBT glasses is about 30 times weaker than that in Er³⁺-doped Na₂O−ZnO−TeO₂ (NZT) glasses.     

Competition between green and infrared emission in Er:YLiF4 upconversion lasers

The competition between two laser transitions in Er:YLiF₄ (⁴S_3/2 → ⁴I_15/2 at 551 nm and ⁴S_3/2 → ⁴I_13/2 at 850 nm) is studied using a model based on rate equations. The laser emission is pumped by upconversion at 795 nm; for comparison, we also discuss upconversion pumping by another mechanism, at 970 nm. The conditions that favor laser emission in various regimes on these two transitions are found.     

Temperature and concentration dependence of spectroscopic properties of Nd-doped yttrium aluminum garnet crystal

The optical absorption spectra of yttrium aluminum garnet (YAG) crystals doped with Nd³⁺ ions with different concentrations (0.6 at%, 1.0 at%, 1.2 at%) at the temperature range from 300 K to 500 K have been measured. The calculated Judd–Ofelt (JO) parameters Ω_t (t=2, 4, 6) based on the spectra have been used to predict the radiative transition probabilities, branching ratios and radiative lifetimes of the transitions from ⁴F_3/2 level to the lower levels (⁴I_13/2, ⁴I_11/2, ⁴I_9/2) at each concentration and temperature. The three JO parameters Ω_t (t=2, 4, 6), according to the calculation, decrease with the increasing doped concentration at each temperature. The JO parameters Ω₂ and Ω₄ increase, while the parameter Ω₆ decreases with the increasing temperature at each concentration. The branching ratios and radiative transition probabilities of the transitions from the ⁴F_3/2 level to ⁴I_13/2 and ⁴I_11/2 levels decrease, while the transition from the ⁴F_3/2 level to ⁴I_9/2 level increases with the increasing temperature. The obtained results at each concentration and temperature are discussed.     

Investigation of spectroscopic properties and thermal stability of Er/Yb-co-doped Bi2O3-B2O3-Ga2O3 glasses

A series of Er³⁺/Yb³⁺-co-doped 60Bi₂O₃-(40−x) B₂O₃ -xGa₂O₃ (BBGA x=0, 4, 8, 12, 16 mol%) glasses have been prepared. The absorption spectra, emission spectra, fluorescence lifetime of Er³⁺:⁴I_13/2 level and thermal stability were measured and investigated. Three Judd-Ofelt intensity parameters Ω_t (t=2,4,6) (Ω₂=(4.67-5.93)×10⁻²⁰ cm², Ω₄=(1.50-1.81)×10⁻²⁰ cm², Ω₆=(0.92-1.17)×10⁻²⁰ cm²) of Er³⁺ ions were calculated by Judd-Ofelt theory. It is found that the Ω₆ first increases with the increase of Ga₂O₃ content from 0 to 8 mol% and then decreases, which is mainly affected by the number of non-bridging oxygen ions of the glass network. The high peak of stimulated emission cross-section () of Er³⁺: ⁴I_13/2→⁴I_15/2 transition were obtained according to McCumber theory and broad full width at half maximum (FWHM=69-76 nm) of the ⁴I_13/2→⁴I_15/2 transition of Er³⁺ ions were measured. The results indicate that these new BBGA glasses can be used as a candidate host material for potential broadband optical amplifiers.     

Controlled Stark shifts in Er-doped crystalline and amorphous waveguides for quantum state storage

We present measurements of the linear Stark effect on the ⁴I_15/2 → ⁴I_13/2 transition in an Er³⁺-doped proton-exchanged LiNbO₃ crystalline waveguide and an Er³⁺-doped silicate fiber. The measurements were made using spectral hole burning techniques at temperatures below 4 K. We measured an effective Stark coefficient (Δμ_eχ)/(h) = 25 ± 1 kHz/V cm⁻¹ in the crystalline waveguide and  kHz/V cm⁻¹ in the silicate fiber. These results confirm the potential of erbium-doped waveguides for quantum state storage based on controlled reversible inhomogeneous broadening.     

Spectroscopic investigations of Nd-, Er-, Er/Yb-, and Tm-ions doped SiO2-Al2O3-CaF2-GdF3 glasses

This paper reports on the absorption, visible and near-infrared luminescence properties of Nd³⁺, Er³⁺, Er³⁺/2Yb³⁺, and Tm³⁺ doped oxyfluoride aluminosilicate glasses. From the measured absorption spectra, Judd-Ofelt (J-O) intensity parameters (Ω₂, Ω₄ and Ω₆) have been calculated for all the studied ions. Decay lifetime curves were measured for the visible emissions of Er³⁺ (558 nm, green), and Tm³⁺ (650 and 795 nm), respectively. The near infrared emission spectrum of Nd³⁺ doped glass has shown full width at half maximum (FWHM) around 45 nm (for the ⁴F_3/2→⁴I_9/2 transition), 45 nm (for the ⁴F_3/2→⁴I_11/2 transition), and 60 nm (for the ⁴F_3/2→⁴I_13/2 transition), respectively, with 800 nm laser diode (LD) excitation. For Er³⁺, and Er³⁺/2Yb³⁺ co-doped glasses, the characteristic near infrared emission bands were spectrally centered at 1532 and 1544 nm, respectively, with 980 nm laser diode excitation, exhibiting full width at half maximum around 50 and 90 nm for the erbium ⁴I_13/2→⁴I_15/2 transition. The measured maximum decay times of ⁴I_13/2→⁴I_15/2 transition (at wavelength 1532 and 1544 nm) are about 5.280 and 5.719 ms for 1Er³⁺ and 1Er³⁺/2Yb³⁺ (mol%) co-doped glasses, respectively. The maximum stimulated emission cross sections for ⁴I_13/2→⁴I_15/2 transition of Er³⁺ and Er³⁺/Yb³⁺ are 10.81×10⁻²¹ and 5.723×10^-21 cm². These glasses with better thermal stability, bright visible emissions and broad near-infrared emissions should have potential applications in broadly tunable laser sources, interesting optical luminescent materials and broadband optical amplification at low-loss telecommunication windows.     

Influence of Yb concentration on upconversion luminescence of Ho

Upconversion (UC) emissions at 360 ((⁵F, ³F, ⁵G)₂ → ⁵I₈), 392 (³K₇/⁵G₄ → ⁵I₈), 428 (⁵G₅ → ⁵I₈), 554 (⁵S₂/⁵F₄ → ⁵I₈), 667 (⁵F₅ → ⁵I₈) and 754 (⁵S₂/⁵F₄ → ⁵I₇) nm were obtained in 0.1 mol% Ho³⁺/x mol% Yb³⁺:Y₂O₃ (x = 2, 5, 8, 11, 15) bulk ceramics under infrared (IR) excitation at 976 nm. The intensity of the UC luminescence centered at 554 and 754 nm increased with Yb³⁺ concentration from 2 to 5 mol% and decreased from 5 to 15 mol%, while the UC luminescence centered at 392, 428 and 667 nm increased with Yb³⁺ concentration from 2 to 11 mol%, then started to reduce with Yb³⁺ concentration until 15 mol%. This comes from the competition between the energy back transfer (EBT) process [⁵S₂/⁵F₄(Ho) + ²F_7/2(Yb) → ⁵I₆(Ho) + ²F_5/2(Yb) as well as ⁵F₅(Ho) + ²F_7/2(Yb) → ⁵I₇(Ho) + ²F_5/2(Yb)] and spontaneous radiation process. The intensity of the UC luminescence centered at 360 nm always increases with Yb³⁺ concentration from 2 to 15 mol%. We believe that it may come from the cooperation of energy transfer process from Yb³⁺ ions in the ²F_5/2 state and the cross energy transfer process ⁵S₂/⁵F₄ + ⁵I₆ → (⁵F, ³F, ⁵G)₂ + ⁵I₈.     

Optical detection of near infrared femtosecond laser-heating of Er-doped ZnO-Nb2O5-TeO2 glass by green up-conversion fluorescence of Er ions

The green up-conversion fluorescence of Er³⁺ ions doped in an nonlinear optical ZnO-Nb₂O₅-TeO₂ glass was observed by using 800 nm excitation from a regenerative femtosecond (fs) Ti:Sapphire laser. The detailed analysis on two fluorescence lines at 526 nm (²H_11/2-⁴I_15/2) and 548 nm (⁴S_3/2-⁴I_15/2) revealed the fs laser heating of the multi-component TeO₂-based glass, which was possibly due to its nonlinear absorption of the host glass via the imaginary part of the third-order optical susceptibility (χ⁽³⁾). The result was compared with that of a Er³⁺-doped aluminosilicate glass under the same irradiation condition. When the fs laser was irradiated to the multicomponent TeO₂-based glass in the power density of 150 TW/cm², the laser spot was heated up to ∼520 K, which however was still less than the glass transition temperature (T_g=688 K). This technique provides a useful sensing method of laser spot temperature even inside transparent materials.     

Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures

The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (Al/Si₃N₄/p-Si) Schottky barrier diodes (SBDs) were measured in the temperature range of 80-300 K. By using the thermionic emission (TE) theory, the zero-bias barrier height Φ_B0 calculated from I-V characteristics was found to increase with increasing temperature. Such temperature dependence is an obvious disagreement with the negative temperature coefficient of the barrier height calculated from C-V characteristics. Also, the ideality factor decreases with increasing temperature, and especially the activation energy plot is nonlinear at low temperatures. Such behaviour is attributed to Schottky barrier inhomogeneties by assuming a Gaussian distribution of barrier heights (BHs) at interface. We attempted to draw a Φ_B0 versus q/2kT plot to obtain evidence of a Gaussian distribution of the BHs, and the values of Φ_Bo = 0.826 eV and α_o = 0.091 V for the mean barrier height and standard deviation at zero-bias, respectively, have been obtained from this plot. Thus, a modified ln(I_o/T²) − q²σ_o²/2(kT)² versus q/kT plot gives Φ_B0 and Richardson constant A^* as 0.820 eV and 30.273 A/cm² K², respectively, without using the temperature coefficient of the barrier height. This value of the Richardson constant 30.273 A/cm² K² is very close to the theoretical value of 32 A/cm² K² for p-type Si. Hence, it has been concluded that the temperature dependence of the forward I-V characteristics of the Al/Si₃N₄/p-Si Schottky barrier diodes can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. In addition, the temperature dependence of energy distribution of interface state density (N_SS) profiles was determined from the forward I-V measurements by taking into account the bias dependence of the effective barrier height and ideality factor.     

Microwave spectra, molecular structure and theoretical calculation of two isotopic species of acetyl isocyanate CD3C(O)NCO and CH3C(O)NCO

The microwave spectra of two isotopic species of acetyl isocyanate, ¹³CH₃C(O)NCO and CD₃C(O)NCO, were observed in order to determine the r_o structure and confirmation of the molecular conformation. These isotopic species were prepared by reacting acetyl-2-¹³C-chloride or acetyl-d₃ chloride with sliver cyanate. The rotational spectra of A-level in 26.5-60.0 GHz region have been observed by Stark-modulated microwave spectrometer. Some absorption lines in E-level were observed in ¹³CH₃C(O)NCO. The rotational constants in the ground vibrational state were determined to be A = 10654.8(18), B = 2177.32(2), and C = 1827.65(2) MHz for ¹³CH₃C(O)NCO, and A = 9713.90(6), B = 2042.04(2), and C = 1722.78(2) MHz for CD₃C(O)NCO, respectively. The values of ΔI (= I_c − I_a − I_b) of the ¹³C species (−3.024(13) uŲ) and the d₃ species (−6.163(3) uŲ) indicate that the molecule has C_s symmetry. The r_s coordinates of the carbon atom in the methyl group were determined to be |a| = 2.183(3), |b| = 0.706(9), and |c| = 0.080(87) Å. The determined coordinates were in agreement with those calculated for the cis form, in which the carbonyl group is eclipsed by the NCO group. The six structural parameters of the cis form were adjusted by fitting to the observed rotational constants. The observed rotational constants of the cis form were in better agreement with those calculated using the QCISD/6-31G (d, p) level rather than those calculated using the MP2/6-31G (d, p) level. The barrier of internal rotation of the methyl group was determined as 4.283(16) kJ mol⁻¹ in ¹³CH₃C(O)NCO. The structural tendencies and the relationship between ∠RNC and ¹⁴N quadrupole coupling constants (χ_cc) were discussed.     

Study of the switching phenomena of TlGaS2 single crystals

Single crystals of TlGaS₂ were prepared by a special modified Bridgman technique and used to investigate the switching phenomena. The particular interest shown in switching studies of p-type TlGaS₂ compound is associated with the possibility of its uses as an effective switching and memory elements in electronic devices. The switching effect observed in such crystal shows a memory character. Using a crystal holder and cryostat we measured the switching phenomenon at different ambient conditions such as temperature, light illumination as well as sample thickness. Pronounced parameters for switching for sample of thickness 0.17 cm were determined from the experimental data such as threshold voltage V_th = 400 V, threshold current I_th = 37 μA, holding voltage V_h = 350 V, holding current I_h = 42.3 × 10⁻⁴ A, threshold power P_th = 1.48 × 10⁻² W, threshold field E_th = 196.429 V/cm as well as the ratio between the resistance in the off state R_OFF to the resistance in the conducting state R_ON as 130.253. The factors affecting these parameters have also been investigated.     

Microwave spectrum, molecular structure, and theoretical calculation of cyclohexanone oxime (chair form)

The microwave spectra of cyclohexanone oxime and d₁ (=NOD) and d₄(2,2,6,6-d₄) derivatives were observed in the frequency range from 8 to 40 GHz in the ground and excited vibrational states. The rotational constants were determined to be A = 3799.844(48), B = 1513.7912(23), and C = 1189.6118(29) MHz for normal species, A = 3791.835(88), B = 1461.0324(47), and C = 1157.5653(53) MHz for d₁ species, and A = 3364.141(49), B = 1487.9551(34), and C = 1154.0965(44) MHz for d₄ species in the ground vibrational state. The planar moments, P_bb (P_bb = (I_c + I_a − I_b)/2) of normal, d₁, and d₄ species were determined to be 111.9885(26), 111.9817(46), and 124.2394(49) uŲ, respectively. The almost same values of P_bb of normal and d₁ species suggest that the hydroxyl hydrogen atom is very close to the a-c plane. From the r_s coordinates of the hydroxyl hydrogen atom, the OH bond was found to be at the trans position with respect to the CN double bond. The conformation of cyclohexanone oxime was determined to be chair form by comparing the observed and calculated rotational constants, ΔI, and planar moments, and taking account of the calculated the relative energy difference, ΔE. The structural parameters, the three bond lengths, three bond angles, and three dihedral angles, were adjusted to the nine rotational constants observed. The bond angle of ∠C₂C₁N is much wider than that of ∠C₆C₁N by about 10°. The dihedral angles of ∠C₁C₂C₃C₄, ∠C₂C₃C₄C₅, and ∠C₃C₄C₅C₆ were determined to be 53.3(5), −57.2(5), and 57.2(5)°. Two vibrational modes were assigned to the ring-bending and ring-twisting ones, which are almost harmonic up to v = 3.     

Optical absorption and emission properties of Nd in TeO2-WO3 and TeO2-WO3-CdO glasses

Effects of WO₃ and CdO on the spectroscopic properties of Nd³⁺ doped tellurite glasses were investigated. The optical band gaps and Urbach energies of the samples were determined using the dependence of the absorption coefficient on the photon energy. The Urbach energies were found to vary from 0.18 to 0.25 eV as the WO₃ content in the binary glasses decreased from 20.0 to 10.0 mol% while the optical band gap of the same glasses did not show an appreciable dependence on the glass composition. Judd-Ofelt (Ω_t) parameters were calculated from the optical absorption spectra measured at room temperature. In all the glasses the J-O parameters follow the same trend as Ω₂>Ω₆>Ω₄. The J-O intensity parameters were used to compute the radiative properties such as the radiative transition probabilities (A_ed), branching ratios (β) and radiative lifetimes (τ_r) for all the possible fluorescence bands. The fluorescence spectra obtained upon 805.2 nm excitation exhibited an intense emission band centered at 1064 nm (⁴F_3/2→⁴I_11/2) and two weak bands at 910 nm (⁴F_3/2→⁴I_9/2), and 1340 nm (⁴F_3/2→⁴I_13/2). The stimulated emission cross-section for the 1064 nm emission was determined using the emission spectra. The highest gain bandwidth (σ_e×Δλ_P) was determined to be 155.4 for the 0.79TeO₂-0.15WO₃-0.05CdO ternary glass composition, which could be more useful as promising material for the design and development of fiber amplifiers and lasers.     

Laser frequency stabilization at 1.5 microns using ultranarrow inhomogeneous absorption profiles in Er:LiYF4

Single-frequency diode lasers have been frequency stabilized to 1.5 kHz Allan deviation over 0.05-50 s integration times, with laser frequency drift reduced to less than 1.4 kHz/min, using the frequency reference provided by an ultranarrow inhomogeneously broadened Er³⁺:⁴I_15/2→⁴I_13/2 optical absorption transition at a vacuum wavelength of 1530.40 nm in a low-strain LiYF₄ crystal. The 130 MHz full-width at half-maximum (FWHM) inhomogeneous line width of this reference transition is the narrowest reported for a solid at 1.5 μm. Strain-induced inhomogeneous broadening was reduced by using the single isotope ⁷Li and by the very similar radii of Er³⁺ and the Y³⁺ ions for which it substitutes. To show the practicability of cryogen-free cooling, this laser stability was obtained with the reference crystal at 5 K; moreover, this performance did not require vibrational isolation of either the laser or crystal frequency reference. Stabilization is feasible up to T=25 K where the Er³⁺ absorption thermally broadens to ∼500 MHz. This stabilized laser system provides a tool for interferometry, high-resolution spectroscopy, real-time optical signal processing based on spatial spectral holography and accumulated photon echoes, secondary frequency standards, and other applications such as quantum information science requiring narrow-band light sources or coherent detection.     

Structural, vibrational and dielectric properties of new potassium hydrogen sulfate arsenate: K4(SO4)(HSO4)2(H3AsO4)

A new compound, K₄(SO₄)(HSO₄)₂(H₃AsO₄) was synthesized from water solution of KHSO₄/K₃H(SO₄)₂/H₃AsO₄. This compound crystallizes in the triclinic system with space group P1¯ and cell parameters: a=8.9076(2) Å, b=10.1258(2) Å, c=10.6785(3) Å; α=72.5250(14)°, β=66.3990(13)°, γ=65.5159(13)°, V=792.74(3) Å³, Z=2 and ρ_cal=2.466 g cm⁻³. The refinement of 3760 observed reflections (I>2σ(I)) leads to R₁=0.0394 and wR₂=0.0755. The structure is characterized by SO₄²⁻, HSO₄⁻ and H₃AsO₄ tetrahedra connected by hydrogen bridge to form two types of dimer (H(16)S(3)O₄⁻?S(1)O₄²⁻ and H(12)S(2)O₄⁻?H₃AsO₄). These dimers are interconnected along the [1¯ 1 0] direction by the hydrogen bonds O(3)-H(3)?O(6). They are also linked by the hydrogen bridge assured by the hydrogen atoms H(2), H(3) and H(4) of the H₃AsO₄ group to build the chain S(1)O₄?H₃AsO₄ which are parallel to the “a” direction. The potassium cations are coordinated by eight oxygen atoms with K-O distance ranging from 2.678(2) to 3.354(2) Å.Crystals of K₄(SO₄)(HSO₄)₂(H₃AsO₄) undergo one endothermic peak at 436 K. This transition detected by differential scanning calorimetry (DSC) is also analyzed by dielectric and conductivity measurements using the impedance spectroscopy techniques. The obtained results show that this transition is protonic by nature.     

Electronic conductivity of pure ceria

The electronic conductivity of pure ceria with two different impurity levels is examined by dc polarization technique based on the Hebb-Wagner ion blocking method. The impurity level for the ceria with 99.999% purity (5N-CeO₂) is about 1/100 of that with 99.9% purity (3N-CeO₂) as confirmed by the fluorescence intensity of impurities obtained by Raman spectroscopy. The electronic conductivity for the 5N-CeO₂ was measured at T = 973 K to 1173 K, and the results are essentially the same as those for the 3N-CeO₂. The electronic conductivity increases with decreasing of P(O₂) following slope values of − 1/4 to − 1/6. The − 1/4 dependent region becomes narrower for the 5N-CeO₂ than that for the 3N-CeO₂. For both types of ceria, the P(O₂) independent region appears in the same region of higher than 10^− 2 and 10^− 3 MPa at T = 1073 K and 973 K, respectively. Activation energies for the 5N-CeO₂ were 2.2 eV, 2.6 eV and 1.9 eV in P(O₂) dependent regions of − 1/6, − 1/4 and 0, respectively.     

Electronic structure and magnetic properties of the compound CeCuIn

Magnetization, magnetic susceptibility, electrical resistivity, thermoelectric power and X-ray photoemission measurements were performed on a polycrystalline sample of CeCuIn. This compound crystallizes in a hexagonal structure of the ZrNiAl type. The magnetic data indicate that CeCuIn remains paramagnetic down to 1.9 K with a paramagnetic Curie temperature of −13 K and an effective magnetic moment equal to 2.5 μ_B. The electrical resistivity has metallic character, yet in the entire temperature range studied here, it is a strongly nonlinear function of temperature. The temperature dependence of the thermoelectric power is dominated by a small positive maximum near 76 K and a deep negative minimum at about 16 K. Above 150 K the thermopower exhibits a Mott's type behavior. The positive sign of the Seebeck coefficient in this temperature region indicates that the holes are dominant charge and heat carriers. The structure of Ce 3d_5/2 and Ce 3d_3/2 XPS spectra has been interpreted in terms of the Gunnarsson-Schönhammer theory. Three final-state contributions f⁰, f¹ and f² are clearly observed, which exhibit a spin-orbit splitting Δ_SO≈18.7 eV. The appearance of the 3d⁹f⁰ component is a clear evidence of the intermediate valence behavior of Ce. From the intensity ratio I(f⁰)/[I(f⁰)+I(f¹)+I(f²)] the 4f-occupation number is estimated to be 0.95. In turn, the ratio I(f²)/[I(f¹)+I(f²)]=0.08 yields a measure of the hybridization energy that is equal to 45 meV.