掺Gd3+,Y3+对PbWO_4低温热释光的影响

通过热释光方法研究了PbWO₄(PWO),PWO:Y³⁺,PWO:Gd³⁺多晶粉末及PWO,PWO:Y单晶的低温(<300K)热释光现象.多晶粉末中,掺杂Y³⁺或Gd³⁺都会大大降低甚至消除200K附近的热释光峰,同时产生新的热释光峰,分别位于125和150K(掺Y掺Gd).这表明掺三价离子除了起到电荷补偿作用以减少Pb³⁺,O^-浓度外,还可以产生新的陷阱能级.对于PWO:Y单晶,掺杂Y³⁺可以消除253K的热释光峰,即消除较深(～0.89eV)的陷阱,但PWO单晶中较浅的陷阱(～0.42eV)对应130K热释光峰仍然存在,对此进行讨论,它最可能源于氧空位缺陷.根据Pb³⁺,Gd³⁺,Y³⁺的电子库仑势不同,在PWO晶体中替代Pb²⁺后形成的电子陷阱深度有别(E_Pb>E_Gd>E_Y),从而解释了相应的热释光峰值温度的不同 关键词： 4')" href="#">PbWO₄ Y和Gd掺杂 热释光 陷阱     

Luminescence properties of Ce-doped oxyorthosilicate nanophosphors and single crystals

In this work we investigate and compare the thermoluminescence (TL) and related luminescent properties of cerium-doped Lu₂SiO₅ (LSO), Gd₂SiO₅ (GSO), and Y₂SiO₅ (YSO) nanophosphors prepared by solution combustion synthesis (SCS) to the properties of their single crystal counterparts. Photoluminescence emission and excitation spectra were obtained for comparison with TL and radioluminescence (RL) emission bands. We then compared the structure and intensity of TL curves, RL intensity, and afterglow at room temperature and investigated the trapped charge stability (revealed by TL). The results showed that the SCS technique is capable of producing scintillating materials with less afterglow and RL output comparable to single crystals. The nanophosphor samples also showed lower TL intensities than their single crystal counterparts, which points to a lower concentration of trapping centers. These results demonstrate the potential of nanophosphors produced by SCS for use as scintillators.     

Luminescence and point defects in cerium-doped lutetium scandium orthoborate crystals

Cerium-doped lutetium scandium orthoborate single crystals as potential scintillation materials were grown by the floating zone (FZ) method for the first time and the Czochralski (Cz) grown crystal was used for comparison. In this paper, the representative composition Lu_0.5Sc_0.5BO₃:0.5at%Ce (abbreviated as LSBO:Ce) was selected as the research target. The phase structure of FZ-grown LSBO:Ce crystal was characterized by X-ray diffraction and its optical properties were investigated using photoluminescence emission (PL), excitation (PLE), radioluminescence (RL) spectra. The defect properties of LSBO:Ce crystals were studied by thermoluminescence (TL) as a function of temperature (300–600 K). The glow curve of FZ-grown LSBO:Ce crystal shows three TSL peaks, at 350, 400, 552 K, corresponding to a trap depth of 0.99, 1.14 and 1.50 eV, respectively. Based on UV-irradiation TL measurements and air-annealing experiments, the former two kinds of traps could be ascribed to the radiation-induced defects and the third kind originated from the oxygen vacancies formed during crystal growth. These defects also existed in the Cz-grown LSBO:Ce crystal.     

Intrinsic ultraviolet luminescence from Lu2O3, Lu2SiO5 and Lu2SiO5:Ce

Radioluminescence and thermally stimulated luminescence measurements on Lu₂O₃, Lu₂SiO₅ (LSO) and Lu₂SiO₅:Ce³⁺ (LSO:Ce) reveal the presence of intrinsic ultraviolet luminescence bands. Characteristic emission with maximum at 256 nm occurs in each specimen and is attributed to radiative recombination of self-trapped excitons. Thermal quenching of this band obeys the Mott-Seitz relation yielding quenching energies 24, 38 and 13 meV for Lu₂O₃, LSO and LSO:Ce, respectively. A second intrinsic band appears at 315 nm in LSO and LSO:Ce, and at 368 nm in Lu₂O₃. Quenching curves for these bands show an initial increase in peak intensity followed by a decrease. Similarity in spectral peak position and quenching behavior indicate that this band has a common origin in each of the samples and is attributed to radiative recombination of self-trapped holes, in agreement with previous work on similar specimens. Comparison of glow curves and emission spectra show that the lowest temperature glow peaks in each specimen are associated with thermal decay of self-trapped excitons and self-trapped holes. Interplay between the intrinsic defects and extrinsic Ce³⁺ emission in LSO:Ce is strongly indicated.     

Lu2SiO5:Ce and Y2SiO5:Ce single crystals and single crystalline film scintillators: Comparison of the luminescent and scintillation properties

The paper is dedicated to development of scintillators based on the single crystalline films of Ce³⁺ doped Lu₂SiO₅ (LSO:Ce) and Y₂SiO₅ (YSO:Ce) orthosilicates grown by Liquid Phase Epitaxy method onto YSO substrates from melt-solutions based on the PbO–B₂O₃ flux. We also compare the luminescent and scintillation properties of Ce doped LSO:Ce and YSO:Ce single crystalline films with those of their single crystal counterparts, grown by the Czochralski method.     

Modelling the optical bleaching of the thermoluminescence of K2YF5:Pr3+

Optical bleaching of the thermoluminescence (TL) curve of K₂YF₅:Pr³⁺ has been observed after optically stimulated luminescence (OSL) readout of pre-irradiated crystals. The traps being responsible for the TL signal are not emptied completely by the optical stimulation. Furthermore, if the illumination time is increased a constant intensity level of the residual TL glow curve is eventually achieved. On the other hand, if the low temperature peak of the glow curve is thermally cleaned, no subsequent OSL is measured. This behavior has been successfully explained by assuming that part of the electrons in the trap being responsible for the low temperature glow peak of K₂YF₅:Pr³⁺ recombine with holes via localized transitions during optical stimulation. During TL all trapped electrons recombine via delocalized transitions. Simulations have been carried out in order to demonstrate the feasibility of the model.     

Eu and Ce emission in sulphate based phosphors

Polycrystalline KMgSO₄Cl:Eu and Na₅(PO₄)SO₄:Ce phosphors prepared by a wet chemical method have been studied for its photoluminescence (PL) and thermoluminescence (TL) characteristics. The TL glow curve of the compound has a prominent peak at 200 °C and may be useful for TL study. TL sensitivity of the KMgSO₄Cl:Eu phosphor is found to be 1.7 times less than that of TLD—CaSO₄:Dy. The presence of bands at around 420, 435 and 445 nm in the PL emission spectra of the phosphor suggests the presence of Eu²⁺ in the host compound. Moreover a TL glow curve of the Na₅(PO₄)SO₄:Ce gives a better understanding of the TL mechanism (peaks at 271 and 310 °C) involved in the concerned phosphor. The PL emission spectra are observed at 382 nm for the various concentrations. In this paper we report PL and TL characteristics of KMgSO₄Cl:Eu halosulphate and Na₅(PO₄)SO₄:Ce phosphate sulphate phosphors first time.     

Thermoluminescence studies of γ-irradiated nanocrystalline Y3Al5O12

Nanocrystalline yttrium aluminum garnet (Y₃Al₅O₁₂) is synthesized by combustion technique. The X-ray diffraction (XRD) pattern of 900 °C annealed sample revealed a cubic structure. The average crystallite size is found to be 20.5 nm. γ-irradiated Y₃Al₅O₁₂ exhibits two thermoluminescence (TL) glows: a prominent one with a peak at ～410 K and another one with a peak at ～575 K. It is found that the TL glow peak intensity at 410 K increases, while its glow peak temperature is almost steady with an increase in the γ-dose. The effect of the heating rate on the TL glow curve is studied. It is found that T_m1 shifts towards higher temperature region while the I_m1 decreases with an increase in the heating rate. The TL glow curves are analyzed by Chen's peak shape method and the TL parameters are estimated.     

Thermoluminescence characteristics of inorganically and organically capped ZnS:Cu nanophosphors

ZnS:Cu nanophosphors were prepared by wet chemical methods and characterized by X-ray diffraction (XRD). The typical morphologies of the nanophosphors were investigated by scanning electron microscopy (SEM). The thermoluminescence (TL) properties of inorganically and organically passivated ZnS:Cu nanophosphors were investigated after γ-irradiation using a ⁶⁰Co source at room temperature. The TL glow curve of capped ZnS:Cu showed variation in TL peak and intensity as the capping agent was changed. Amongst the synthesized samples the TL glow curve of SiO₂ capped ZnS:Cu showed the highest TL intensity. It has been found that TL response of SiO₂ capped ZnS:Cu is linear in the range 10-550 Gy. A discussion of the obtained results is also presented.     

Photoluminescence and EPR studies on gamma irradiated Ce doped potassium halide single crystals

Electron Paramagnetic Resonance(EPR), Photoluminescence(PL), Thermoluminescence (TL) and other optical studies of γ-irradiated KBr, KCl:Ce³⁺ single crystals. Cerium when doped into the KBr, KCl is found to enter the host lattice in its trivalent state and act as electron trap during γ-irradiation, thereby partially converting itself to Ce²⁺. The Photoluminescence(PL) spectra of both KCl and KBr crystals doped with Ce exhibit the strong blue emissions of Ce corresponding to ⁵d(²D)→²F_5/2 and ⁵d(²D)→²F_7/2 transitions. The defect centers formed in the Ce³⁺ doped KBr and KCl. Crystals are studied using the technique of EPR. A dominant TL glow peak at 374, 422 K and KCl:Ce³⁺ at 466, 475 K is observed in the crystal. EPR studies indicate the presence at two centers at room temperature. Spectral distribution under the thermoluminescence emission(TLE) and optically stimulated emission(OSL) support the idea that defect annihilation process to be due to thermal release of F electron in KBr, KCl:Ce³⁺ crystals. Both Ce³⁺ and Ce²⁺ emissions were observed in the thermoluminescence emission of the crystals.     

XPS analysis for degraded Y2SiO5:Ce phosphor thin films

X-ray photoelectron spectroscopy (XPS) results were obtained for standard Y₂SiO₅:Ce phosphor powders as well as undegraded and 144 h electron degraded Y₂SiO₅:Ce pulsed laser deposited (PLD) thin films. The two Ce 3d peaks positioned at 877.9 ± 0.3 and 882.0 ± 0.2 eV are correlated with the two different sites occupied by Ce in the Y₂SiO₅ matrix. Ce replaced the Y in the two different sites with coordination numbers of 9 and 7. The two Ce 3d XPS peaks obtained during the thin film analysis were also correlated with the luminescent mechanism of the broad band emission spectra of the Y₂SiO₅:Ce X₁ phase. These two different sites are responsible for the two main sets of cathodoluminescent (CL) and photoluminescence (PL) peaks situated at wavelengths of 418 and 496 nm. A 144 h electron degradation study on the Y₂SiO₅:Ce thin film yielded an increase in the CL intensity with a second broad emission peak emerging between 600 and 700 nm. XPS analysis showed the presence of SiO₂ on the surface that formed during prolonged electron bombardment. The electron stimulated surface chemical reaction (ESSCR) model is used to explain the formation of this luminescent SiO₂ layer.     

TL and OSL studies on lithium borate single crystals doped with Cu and Ag

Lithium borate (LBO) single crystals doped with Cu and Ag (0.25 mol% each) (Li₂B₄O₇:Cu,Ag) are grown by the Czochralski method. The thermoluminescence readout on Li₂B₄O₇:Cu,Ag crystals showed three glow peaks at～375, 441 and 516 K for the heating rate of 1  K/s. The thermoluminescence sensitivity of the grown Li₂B₄O₇:Cu,Ag single crystals is found to be 5 times TLD-100 and a linear dose response in the range 1 mGy to 1 kGy. The glow curve deconvolution reveals nearly first order kinetics for all the three peaks with trap depths 0.77, 1.25 and 1.34 eV respectively and corresponding frequency factors 1.6×10⁹, 1.3×10¹³ and 6.8×10¹¹ s^?1. The continuous wave optically stimulated luminescence (CW-OSL) measurements were performed on the LBO:Cu,Ag single crystals using blue light stimulation. The traps responsible for the three thermoluminescence peaks in Li₂B₄O₇:Cu,Ag are found to be OSL sensitive. The qualitative correlation between TL peaks and CW-OSL response is established. The photoluminescence studies show that in case of co-doping of Ag in LBO:Cu the emission at 370 nm in Cu states dominates over the transitions in Ag states implying doping of Ag plays a role as sensitizer when co-doped with Cu and increases overall emission.     

Thermoluminescence kinetic study of binary lead-silicate glasses

This paper describes a detailed experimental study of the thermoluminescence (TL) properties of four binary lead-silicate glasses, with PbO concentrations ranging from 32% to 62% in mole percent. The TL glow peaks between room temperature and 300 °C were analyzed using a systematic thermal cleaning technique. The T_max-T_stop and E-T_stop methods of analysis were used to identify the number of peaks under the glow curves, and to obtain the activation energy E for each TL trap. A computerized glow curve fitting analysis is used to fit the experimental data to four first-order peaks with maxima at temperatures of 54, 80, 110 and 210 °C, as measured with a heating rate of 2 °C/s. The kinetic parameters of the glow-peak at 210 °C were confirmed by using phosphorescence decay methods of analysis. The TL traps associated with the low-temperature TL peak at 54 °C are found to depend strongly on the PbO concentration of the samples, while the higher-temperature TL peaks show a behavior independent of the PbO concentration. The activation energy E and frequency factor s of the low-temperature TL trap associated with the peak at 54 °C are consistent with a trap involving a delocalized transition through the conduction band. However, the activation energies and frequency factors for the higher-temperature TL traps are consistent with traps involving localized transitions via an excited state below the conduction band. The data suggest that these higher-temperature TL traps are associated with the common silicate matrix in these binary silicate glasses.     

Interactive process in the mechanism of thermostimulated luminescence in anion-defect α-Al2O3 crystals

A study of the role of deep traps in the specific features of the thermoluminescence (TL) of anion-defect α-Al₂O₃ single crystals is reported. The existence of deep traps is proven by direct observation of the associated TL peaks. Experimental support for the effect of deep-trap filling on the main characteristics of the main TL peak at 450 K is presented. A model involving trap interaction is proposed, which differs radically from the others described in the literature by taking into account the temperature dependence of the carrier capture probability by deep traps. This model was used to calculate the dependences on heating rate and deep-trap filling of the main parameters of the main TL peak for the crystals under study (TL yield, glow-curve shape, and sensitivity to the stored light sum), which were found to be close to those observed experimentally. Fiz. Tverd. Tela (St. Petersburg) 40, 229–234 (February 1998)     

Effect of doping with cobalt on radioluminescence and low temperature thermoluminescence of Li2B4O7 crystals

X-ray excited emission spectra at various temperatures, as well as low temperature glow curves of Czochralski-grown Li₂B₄O₇:Co (LTB:Co) single crystals, have been recorded and compared with the data available for undoped LTB and LTB:Eu,Mn. Although the presence of cobalt does not influence the radioluminescence of the material, it clearly alters its thermoluminescence; specifically, the number of peaks in the glow curve of LTB:Co is reduced as against that of LTB and LTB:Eu,Mn. This observation and its possible interpretations shed new light on the issue of shallow traps in lithium tetraborate crystals.     

Luminescence and evaluation of trapping parameters in NaMgSO4Cl: X (X=Cu or Ce) phosphor

Thermoluminescence (TL) characteristics of recently developed high sensitive mixed halosulphate phosphors, NaMgSO₄Cl: Cu and NaMgSO₄Cl: Ce were studied in comparison with CaSO₄: Dy in order to assess the possibility of their use in personal monitoring and TLD phosphors at very low dose of 5 Gy. It was found that NaMgSO₄Cl: Cu is 5.59 times and NaMgSO₄Cl: Ce is 6.18 times more sensitive as compared to standard CaSO₄: Dy. UV photo-excited luminescence from Cu to Ce doped NaMgSO₄Cl halosulphate phosphors has been investigated. The intense emission of the spectrum is assigned to electronic transitions 3d⁹4s¹→3d¹⁰ in monovalent copper ion and 5d→4f in Ce³⁺ ions. Increase in PL peak intensity suggesting that Cu and Ce play an important role in PL emission in the present matrix. These phosphors were synthesized by the wet chemical method. XRD, photoluminescence (PL) and thermoluminescence (TL) characterization of phosphors has been reported in this paper. The preparation of an inexpensive and high sensitive NaMgSO₄Cl: Cu and NaMgSO₄Cl: Ce with TL glow peaks for different concentrations are observed between 160 and 195 °C and between 200 and 225 °C, respectively, exposed to gamma-rays of ⁶⁰Co for their thermoluminescence (TL) properties. The glow curves have been recorded at a heating rate of 2 K s^?1 and irradiated at a dose rate of 0.995 kGy h^?1 for 5 Gy. In present study the trapping parameters such as order of kinetics (b), activation energy (E) and frequency factors (s) have been calculated for the 195 and 200 °C glow peaks of NaMgSO₄Cl: Cu and NaMgSO₄Cl: Ce, respectively by using Chen's method. The paper discusses the luminescence of Cu⁺ and Ce³⁺ by simple method of incorporation in NaMgSO₄Cl host.     

Cr-related centers in Gd3Ga5O12 polycrystals

The luminescence excitation spectra, emission spectra under photo- and X-ray excitation, luminescence decay kinetics and thermostimulated luminescence (TSL) of Gd₃Ga₅O₁₂ garnet (GGG) polycrystalline samples have been investigated. It was established that the spectrum of Cr³⁺ ion emission were present in all TSL peaks. The activation energies of traps that are responsible for appearance of TSL in the region 295-600 K were estimated. It is shown that delocalization of electrons from the Cr³⁺e traps leads to the appearance of thermoluminescence (TL) glow peak at 390 K. The nature of other TSL peaks is discussed. The influence of visible light on the TSL intensity of the preliminary X-ray-irradiated samples is shown.     

α-Al2O3单晶的热释光和光释光特性

研究了纯α-Al₂O₃单晶的热释光发光曲线和三维发光谱，以及光释光衰变曲线，对它们的发光机理和剂量学特性进行了分析和讨论.实验观察到α-Al₂O₃单晶β射线照射后立即测量的热释光发光曲线，有峰温为76℃和207℃两个发光峰.经γ射线照射数小时后测量的三维发光谱，只有峰温207℃波长为416 nm发光峰，它与α-Al₂O₃:C晶体的发光波长基本相同，是受热激发到导带的电子与F< 关键词： 2O₃')" href="#">α-Al₂O₃ 三维发光谱 TL/OSL剂量响应     

Applications of the three points analysis method for obtaining the trap parameters and the separation of thermoluminescence glow curve into its components

Here, we apply a recently developed technique to separate a composite thermoluminescence (TL) glow curve into its individual components and to evaluate the trap parameters of the individual TL glow peaks. These parameters include the order of kinetics b, the activation energy E (eV) and the frequency factor S (s^?1) or the pre-exponential factor S″ (s^?1). Recently, a general equation was developed to estimate the order of kinetics b. The characteristic point of this equation is that any set of three data points in a TL glow curve can yield b. Using this characteristic, an improved procedure was suggested to separate a composite glow curve, which includes several overlapping peaks, into its individual components and to obtain the trap parameters of the individual glow peaks. The method was applied here to analyze and determine the trap parameters of the TL glow curve of the promising TL dosimetric material, double potassium yttrium fluoride (K₂YF₅) doped with praseodymium ions (Pr³⁺), in response to γ-irradiation.